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1. 发明公开

US20230261444A1 MONOLITHIC EDGE-EMITTING SEMICONDUCTOR DIODE ARRAYS 审中-公开
公开(公告)号：US20230261444A1
公开(公告)日：2023-08-17
申请号：US18064244
申请日：2022-12-09
申请人： EXALOS AG
发明人： Marco ROSSETTI , Marcus DÜLK , Antonino Francesco CASTIGLIA , Marco MALINVERNI , Christian VELEZ
IPC分类号： H01S5/40 , H01S5/022 , H01S5/02 , H01S5/026 , H01S5/10
CPC分类号： H01S5/4031 , H01S5/022 , H01S5/0203 , H01S5/026 , H01S5/101 , H01S5/1085
摘要： A monolithic edge-emitting semiconductor diode array chip (100) comprises a one-dimensional array (70) of diode emitters (50), such as laser diodes, superluminescent diodes or semiconductor optical amplifiers. Semiconductor layers are arranged on a conductive substrate (1) and include active region layers (14) arranged between upper and lower cladding layers (12, 16) and separation layers (4, 5) arranged between the conductive substrate (1) and the lower cladding layer (16). The diode emitters (50) are formed by respective ridges (9) that are separated by trenches (25) which are sufficiently deep to penetrate into the separation layers (4, 5). Each diode (50) has its own upper and lower contacts (22, 24) that allow each diode (50) to be independently drivable with a current source driver circuit connected to push a modulated push current through its associated diode and/or a current sink connected to extract a modulated pull current through its associated diode.

2. 发明授权

US10063028B2 High SMSR unidirectional etched lasers and low back-reflection photonic device 有权
公开(公告)号：US10063028B2
公开(公告)日：2018-08-28
申请号：US14528450
申请日：2014-10-30
申请人： MACOM TECHNOLOGY SOLUTIONS HOLDINGS, INC.
发明人： Alex A Behfar , Alfred T Schremer, Jr. , Cristian Stagarescu
IPC分类号： H01S5/10 , H01S5/0687 , H01S5/028 , H01S5/068 , G02B6/12 , H01S5/125 , H01S5/00 , H01S5/065 , H01S5/14
CPC分类号： H01S5/0287 , G02B6/12004 , H01S5/005 , H01S5/0085 , H01S5/0656 , H01S5/06817 , H01S5/0687 , H01S5/1021 , H01S5/1071 , H01S5/1082 , H01S5/1085 , H01S5/125 , H01S5/14
摘要： Unidirectionality of lasers is enhanced by forming one or more etched gaps in the laser cavity. The gaps may be provided in any segment of a laser, such as any leg of a ring laser, or in one leg of a V-shaped laser. A Brewster angle facet at the distal end of a photonic device coupled to the laser reduces back-reflection into the laser cavity. A distributed Bragg reflector is used at the output of a laser to enhance the side-mode suppression ratio of the laser.

3. 发明授权

US09941665B1 Optical device structure using GaN substrates and growth structures for laser applications 有权
公开(公告)号：US09941665B1
公开(公告)日：2018-04-10
申请号：US15671384
申请日：2017-08-08
申请人： Soraa Laser Diode, Inc.
发明人： James W. Raring
IPC分类号： H01S5/20 , H01S5/22 , H01S5/02 , H01S5/343 , H01S5/10
CPC分类号： H01S5/2201 , B82Y20/00 , H01S5/0014 , H01S5/0202 , H01S5/028 , H01S5/0287 , H01S5/1085 , H01S5/2009 , H01S5/2031 , H01S5/3202 , H01S5/3213 , H01S5/34333 , H01S5/4025
摘要： Optical devices having a structured active region configured for selected wavelengths of light emissions are disclosed.

4. 发明授权

US09735547B1 Optical device structure using GaN substrates and growth structures for laser applications 有权
公开(公告)号：US09735547B1
公开(公告)日：2017-08-15
申请号：US15380156
申请日：2016-12-15
申请人： Soraa Laser Diode, Inc.
发明人： James W. Raring
IPC分类号： B82Y20/00 , H01S5/22 , H01S5/10 , H01S5/20 , H01S5/343 , H01S5/02
CPC分类号： H01S5/2201 , B82Y20/00 , H01S5/0014 , H01S5/0202 , H01S5/028 , H01S5/0287 , H01S5/1085 , H01S5/2009 , H01S5/2031 , H01S5/3202 , H01S5/3213 , H01S5/34333 , H01S5/4025
摘要： Optical devices having a structured active region configured for selected wavelengths of light emissions are disclosed.

5. 发明申请

US20170207600A1 3D PHOTONIC INTEGRATION WITH LIGHT COUPLING ELEMENTS 审中-公开
公开(公告)号：US20170207600A1
公开(公告)日：2017-07-20
申请号：US15326452
申请日：2015-07-14
申请人： Biond Photonics Inc.
发明人： Jonathan Klamkin , Sasa Ristic
IPC分类号： H01S5/022 , H01S5/14 , G02B6/14 , H01S5/026 , G02B6/13 , G02B6/12
CPC分类号： H01S5/0224 , G02B6/12002 , G02B6/12004 , G02B6/124 , G02B6/13 , G02B6/14 , G02B6/34 , G02B6/4214 , G02B2006/12061 , G02B2006/12078 , G02B2006/12104 , G02B2006/12121 , G02B2006/12147 , H01S3/107 , H01S5/0085 , H01S5/021 , H01S5/02292 , H01S5/026 , H01S5/0287 , H01S5/1032 , H01S5/1085 , H01S5/141 , H01S5/142 , H01S5/4062
摘要： Methods for realizing integrated lasers and photonic integrated circuits on complimentary metal-oxide semiconductor (CMOS)-compatible silicon (Si) photonic chips, potentially containing integrated electronics, are disclosed. The integration techniques rely on light coupling with integrated light coupling elements such as turning mirrors, lenses, and surface grating couplers. Light is coupled from between two or more substrates using the light coupling elements. The technique can realize integrated lasers on Si where a gain flip chip (the second substrate) is bonded to a Si chip (the first substrate) and light is coupled between a waveguide in the gain flip chip to a Si waveguide by way of a turning mirror or grating coupler in the flip chip and a grating coupler in the Si chip. Integrated lenses and other elements such as spot-size converters can also be incorporated to alter the mode from the gain flip chip to enhance the coupling efficiency to the Si chip. The light coupling integration technique also allows for the integration of other components such as modulators, amplifiers, and photodetectors. These components can be waveguide-based or non-waveguide based, that is to say, surface emitting or illuminating.

6. 发明授权

US09553426B1 Optical device structure using GaN substrates and growth structures for laser applications 有权
标题翻译：使用GaN衬底的光学器件结构和用于激光应用的生长结构
公开(公告)号：US09553426B1
公开(公告)日：2017-01-24
申请号：US15155947
申请日：2016-05-16
申请人： Soraa Laser Diode, Inc.
发明人： James W. Raring
IPC分类号： H01S5/00 , H01S5/343 , H01S5/22 , H01S5/028 , H01S5/32 , H01S5/20
CPC分类号： H01S5/2201 , B82Y20/00 , H01S5/0014 , H01S5/0202 , H01S5/028 , H01S5/0287 , H01S5/1085 , H01S5/2009 , H01S5/2031 , H01S5/3202 , H01S5/3213 , H01S5/34333 , H01S5/4025
摘要： Optical devices having a structured active region configured for selected wavelengths of light emissions are disclosed.
摘要翻译：公开了具有为选定的发光波长配置的结构化有源区的光学器件。

7. 发明申请

US20160322785A1 ANGLED FACET BROAD-RIDGE QUANTUM CASCADE LASER 有权
标题翻译： ANGLED FACET FACET BROAD-RIDGE QUANTUM CASCADE LASER
公开(公告)号：US20160322785A1
公开(公告)日：2016-11-03
申请号：US14078325
申请日：2013-11-12
申请人： The Boeing Company
发明人： Michael Lee Tilton , Gregory C. Dente
IPC分类号： H01S5/10 , G01S7/495 , H01S5/042 , B64D45/00 , H01S5/22 , H01S5/34
CPC分类号： H01S5/3401 , H01S5/028 , H01S5/0287 , H01S5/0624 , H01S5/1039 , H01S5/1085 , H01S5/2018 , H01S5/2036 , H01S5/22 , H01S2301/166
摘要： A particular quantum cascade laser includes a ridge-guide. The ridge-guide includes an angled facet that extends across a width of the ridge-guide and a flat facet that extends across the width of the ridge-guide. A first distance between the flat facet and the angled facet along a first side of the ridge-guide is different than a second distance between the flat facet and the angled facet along a second side of the ridge-guide.
摘要翻译：特定的量子级联激光器包括脊导向器。脊导向器包括横跨脊导向件的宽度延伸的倾斜小平面和横跨脊导向件的宽度延伸的平坦小平面。沿着脊导向件的第一侧，扁平面和成角度小平面之间的第一距离不同于沿着脊导向件的第二侧的平面和成角度小平面之间的第二距离。

8. 发明申请

US20160111857A1 SEMICONDUCTOR-LASER-DEVICE ASSEMBLY 有权
标题翻译：半导体激光器件组件
公开(公告)号：US20160111857A1
公开(公告)日：2016-04-21
申请号：US14933664
申请日：2015-11-05
申请人： Sony Corporation
发明人： Shunsuke KONO , Masaru KURAMOTO , Rintaro KODA
IPC分类号： H01S5/065 , H01S3/23
CPC分类号： H01S5/0657 , H01S3/08004 , H01S3/08009 , H01S3/2308 , H01S5/0057 , H01S5/0078 , H01S5/0602 , H01S5/065 , H01S5/101 , H01S5/1085 , H01S5/14 , H01S5/141 , H01S5/143 , H01S5/22 , H01S5/343 , H01S5/34333 , H01S5/40 , H01S5/50
摘要： A semiconductor-laser-device assembly includes a mode-locked semiconductor-laser-element assembly including a mode-locked semiconductor laser element, and a dispersion compensation optical system, on which laser light emitted from the mode-locked semiconductor laser element is incident and from which the laser light is emitted; and a semiconductor optical amplifier having a layered structure body including a group III-V nitride-based semiconductor layer, the semiconductor optical amplifier configured to amplify the laser light emitted from the mode-locked semiconductor-laser-element assembly.
摘要翻译：半导体激光器件组件包括：锁模半导体激光元件组件，其包括锁模半导体激光器元件和色散补偿光学系统，激光从锁模半导体激光器元件发射出射入其上; 发射激光; 以及半导体光放大器，其具有包括III-V族氮化物基半导体层的分层结构体，所述半导体光放大器被配置为放大从锁模半导体激光元件组件发射的激光。

9. 发明授权

US09184560B2 Semiconductor-laser-device assembly 有权
标题翻译：半导体激光器件组装
公开(公告)号：US09184560B2
公开(公告)日：2015-11-10
申请号：US14264773
申请日：2014-04-29
申请人： Sony Corporation
发明人： Shunsuke Kono , Masaru Kuramoto , Rintaro Koda
IPC分类号： H01S3/098 , H01S5/065 , H01S5/343 , H01S5/50 , H01S5/14 , H01S5/06 , H01S5/40 , H01S3/23 , H01S5/00 , H01S5/10 , H01S5/22
CPC分类号： H01S5/0657 , H01S3/08004 , H01S3/08009 , H01S3/2308 , H01S5/0057 , H01S5/0078 , H01S5/0602 , H01S5/065 , H01S5/101 , H01S5/1085 , H01S5/14 , H01S5/141 , H01S5/143 , H01S5/22 , H01S5/343 , H01S5/34333 , H01S5/40 , H01S5/50
摘要： A semiconductor-laser-device assembly includes a mode-locked semiconductor-laser-element assembly including a mode-locked semiconductor laser element, and a dispersion compensation optical system, on which laser light emitted from the mode-locked semiconductor laser element is incident and from which the laser light is emitted; and a semiconductor optical amplifier having a layered structure body including a group III-V nitride-based semiconductor layer, the semiconductor optical amplifier configured to amplify the laser light emitted from the mode-locked semiconductor-laser-element assembly.
摘要翻译：半导体激光器件组件包括：锁模半导体激光元件组件，其包括锁模半导体激光器元件和色散补偿光学系统，激光从锁模半导体激光器元件发射出射入其上; 发射激光; 以及半导体光放大器，其具有包括III-V族氮化物基半导体层的层状结构体，所述半导体光放大器被配置为放大从锁模半导体激光元件组件发射的激光。

10. 发明授权

US09166368B2 High power semiconductor laser with phase-matching optical element 有权
标题翻译：具有相位匹配光学元件的大功率半导体激光器
公开(公告)号：US09166368B2
公开(公告)日：2015-10-20
申请号：US13624537
申请日：2012-09-21
申请人： Manoj Kanskar
发明人： Manoj Kanskar
IPC分类号： H01S5/10 , H01S5/12 , H01S5/028 , H01S5/22
CPC分类号： H01S5/1014 , H01S5/0287 , H01S5/1085 , H01S5/12 , H01S5/1203 , H01S5/22 , H01S2301/166
摘要： A semiconductor laser that includes a single mode semiconductor laser coupled to a flared power amplifier is provided, the device including an internal or an external optical element that reinforces the curved wave front of the flared section of the device through phase-matching. By reinforcing the curved wave front via phase-matching, the device is less susceptible to thermal and gain-index coupled perturbations, even at high output powers, resulting in higher beam quality. Exemplary phase-matching optical elements include a grating integrated into the flared amplifier section; an intra-cavity, externally positioned binary optical element; and an intra-cavity, externally positioned cylindrically curved optical element.
摘要翻译：提供了包括耦合到扩口功率放大器的单模半导体激光器的半导体激光器，该器件包括通过相位匹配来加强器件的扩口部分的弯曲波前的内部或外部光学元件。通过相位匹配对弯曲波前进行加强，即使在高输出功率下，器件也不易受到热和增益折射率的耦合扰动的影响，从而导致更高的光束质量。示例性相位匹配光学元件包括集成到扩张放大器部分中的光栅; 腔内，外部定位的二进制光学元件; 以及腔内，外部定位的圆柱形弯曲光学元件。

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