专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09843160B1 Integrated digital laser 有权
公开(公告)号：US09843160B1
公开(公告)日：2017-12-12
申请号：US15394164
申请日：2016-12-29
申请人： X Development LLC
发明人： Martin Friedrich Schubert , Michael Jason Grundmann
IPC分类号： H01S5/00 , H01S5/183 , H01S5/125 , H01S5/343 , H01S5/042 , H01S5/026 , H01S5/0625 , H01S5/0683 , H01S5/068 , H01S5/30
CPC分类号： H01S5/18302 , H01S3/1055 , H01S5/0265 , H01S5/042 , H01S5/0425 , H01S5/06251 , H01S5/0653 , H01S5/0655 , H01S5/068 , H01S5/06832 , H01S5/141 , H01S5/143 , H01S5/18341 , H01S5/18361 , H01S5/30
摘要： A laser device includes: a substrate formed from material transparent at a laser wavelength; a first reflecting layer to reflect at least some incident radiation at the laser wavelength; a layer including a gain medium for providing stimulated emission of radiation at the laser wavelength, and positioned between the first reflecting layer and the substrate; a second reflecting layer on an opposite side of the substrate from the first reflecting layer to reflect at least some incident radiation at the laser wavelength; a spatial light modulator in an optical cavity comprising the first and second reflecting layers, and comprising an array of elements each corresponding to a different path for radiation in the optical cavity; and a computer controller that, during operation, causes the spatial light modulator to selectively vary an intensity or phase of radiation in the optical cavity to provide variable transverse spatial mode output of the radiation.

2. 发明申请

US20170097527A1 Electro-Optic Modulator Device, Optical Device and Method of Making an Optical Device 审中-公开
公开(公告)号：US20170097527A1
公开(公告)日：2017-04-06
申请号：US15380850
申请日：2016-12-15
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Wan-Yu Lee , Ying-Hao Kuo
IPC分类号： G02F1/025 , H01S5/183
CPC分类号： G02F1/025 , G02F1/015 , G02F1/01716 , G02F2201/12 , G02F2201/307 , G02F2201/34 , G02F2201/38 , H01S5/0425 , H01S5/18302 , H01S5/18341 , H01S2301/176
摘要： An electro-optic modulator device includes a modulation region, a reflecting region, a conductive line and an anti-reflecting region. The modulation region includes a doped region. The reflecting region is over the modulation region. The conductive line is connected to the doped region. The conductive line extends through the reflecting region. The anti-reflecting region is on an opposite surface of the modulation region from the reflecting region.

3. 发明申请

US20160359566A1 SEMICONDUCTOR ARRANGEMENT AND FORMATION THEREOF 审中-公开
公开(公告)号：US20160359566A1
公开(公告)日：2016-12-08
申请号：US15230646
申请日：2016-08-08
申请人： Taiwan Semiconductor Manufacturing Company Limited
发明人： Hung-Chang Yu , Kai-Chun Lin , Yu-Der Chih , Ying-Hao Kuo
IPC分类号： H04B10/43 , H01L29/08 , H01L27/06 , H01L29/66 , H01L21/306 , G02F1/025 , H01S5/183 , H01L31/112 , G02B6/12 , G02B6/34 , G02B6/122 , H01L23/31 , H01S5/026
CPC分类号： H04B10/43 , G02B6/12002 , G02B6/12004 , G02B6/1226 , G02B6/34 , G02F1/025 , G02F2001/0157 , H01L21/30604 , H01L23/3171 , H01L27/0688 , H01L29/0847 , H01L29/66477 , H01L31/112 , H01S5/021 , H01S5/026 , H01S5/0261 , H01S5/0265 , H01S5/0285 , H01S5/183 , H01S5/18302 , H01S5/18361 , H01S5/3027
摘要： A semiconductor arrangement and a method of forming the same are described. A semiconductor arrangement includes a first layer including a first optical transceiver and a second layer including a second optical transceiver. A first serializer/deserializer (SerDes) is connected to the first optical transceiver and a second SerDes is connected to the second optical transceiver. The SerDes converts parallel data input into serial data output including a clock signal that the first transceiver transmits to the second transceiver. The semiconductor arrangement has a lower area penalty than traditional intra-layer communication arrangements that do not use optics for alignment, and mitigates alignment issues associated with conventional techniques.

4. 发明申请

US20160248227A1 VERTICAL-CAVITY SURFACE-EMITTING LASER DIODE AND OPTICAL TRANSMISSION APPARATUS 审中-公开
公开(公告)号：US20160248227A1
公开(公告)日：2016-08-25
申请号：US15143653
申请日：2016-05-02
申请人： TOKYO INSTITUTE OF TECHNOLOGY , FUJI XEROX CO., LTD.
发明人： Fumio KOYAMA , Hamed DALIR , Takashi KONDO , Naoki JOGAN , Kazutaka TAKEDA , Hideo NAKAYAMA
IPC分类号： H01S5/183 , H01S5/343 , H01S5/022
CPC分类号： H01S5/1835 , H01S5/02284 , H01S5/06226 , H01S5/1032 , H01S5/18302 , H01S5/18313 , H01S5/18344 , H01S5/18394 , H01S5/3432
摘要： A vertical-cavity surface-emitting laser diode includes: a first resonator that has a plurality of semiconductor layers comprising a first current narrowing structure having a first conductive region and a first non-conductor region; a first electrode that supplies electric power to drive the first resonator; a second resonator that has a plurality of semiconductor layers comprising a second current narrowing structure having a second conductive region and a second non-conductive region and that is formed side by side with the first resonator, the second current narrowing structure being formed in same current narrowing layer as the layer where the first current narrowing structure is formed; and a coupling portion as defined herein; and an equivalent refractive index of the coupling portion is smaller than an equivalent refractive index of each of the first resonator and the second resonator.

5. 发明授权

US09413140B2 Semiconductor arrangement and formation thereof 有权
标题翻译：半导体装置及其形成
公开(公告)号：US09413140B2
公开(公告)日：2016-08-09
申请号：US14133699
申请日：2013-12-19
申请人： Taiwan Semiconductor Manufacturing Company Limited
发明人： Hung-Chang Yu , Ying-Hao Kuo , Kai-Chun Lin , Yue-Der Chih
IPC分类号： H04B10/00 , H01S5/30 , H04B10/43 , H01S5/02 , H01S5/026 , H01S5/028 , H01S5/183
CPC分类号： H04B10/43 , G02B6/12002 , G02B6/12004 , G02B6/1226 , G02B6/34 , G02F1/025 , G02F2001/0157 , H01L21/30604 , H01L23/3171 , H01L27/0688 , H01L29/0847 , H01L29/66477 , H01L31/112 , H01S5/021 , H01S5/026 , H01S5/0261 , H01S5/0265 , H01S5/0285 , H01S5/183 , H01S5/18302 , H01S5/18361 , H01S5/3027
摘要： A semiconductor arrangement and a method of forming the same are described. A semiconductor arrangement includes a first layer including a first optical transceiver and a second layer including a second optical transceiver. A first serializer/deserializer (SerDes) is connected to the first optical transceiver and a second SerDes is connected to the second optical transceiver. The SerDes converts parallel data input into serial data output including a clock signal that the first transceiver transmits to the second transceiver. The semiconductor arrangement has a lower area penalty than traditional intra-layer communication arrangements that do not use optics for alignment, and mitigates alignment issues associated with conventional techniques.
摘要翻译：对半导体装置及其形成方法进行说明。半导体装置包括包括第一光收发器的第一层和包括第二光收发器的第二层。第一个串行器/解串器（SerDes）连接到第一个光收发器，第二个SerDes连接到第二个光收发器。 SerDes将并行数据输入转换为串行数据输出，包括第一个收发器向第二个收发器发送的时钟信号。半导体布置具有比不使用光学器件对准的传统层内通信布置更低的面积损失，并且减轻与常规技术相关联的对准问题。

6. 发明申请

US20160141835A1 LAYER ARRANGEMENT AND METHOD FOR FABRICATING THEREOF 有权
标题翻译：层布置及其制作方法
公开(公告)号：US20160141835A1
公开(公告)日：2016-05-19
申请号：US14884371
申请日：2015-10-15
申请人： Nanyang Technological University
发明人： Guozhen Liang , Qijie Wang
IPC分类号： H01S5/042 , H01S5/12 , H01S5/34
CPC分类号： H01S5/0425 , H01S5/0265 , H01S5/18302 , H01S5/18375 , H01S5/18386 , H01S5/3401 , H01S2302/02
摘要： According to various embodiments, there is provided a layer arrangement including a graphene layer; a gating electrode layer configured to provide a tuning voltage to the graphene layer; a laser layer configured to provide an electromagnetic wave; and a concentric-circular grating layer configured to couple the electromagnetic wave to the graphene layer.
摘要翻译：根据各种实施例，提供了包括石墨烯层的层布置; 配置成向石墨烯层提供调谐电压的选通电极层; 被配置为提供电磁波的激光层; 以及配置成将电磁波耦合到石墨烯层的同心圆形光栅层。

7. 发明申请

US20160006213A1 INTEGRATED OPTOELECTRONIC DEVICE COMPRISING A MACH-ZEHNDER MODULATOR AND A VERTICAL CAVITY SURFACE EMITTING LASER (VCSEL) 有权
标题翻译：包含MACH-ZEHNDER调制器和垂直孔表面发射激光器（VCSEL）的集成光电设备
公开(公告)号：US20160006213A1
公开(公告)日：2016-01-07
申请号：US14322880
申请日：2014-07-02
申请人： Avago Technologies General IP (Singapore) Pte. Ltd
发明人： Chung-Yi Su
IPC分类号： H01S5/183 , H01S5/34 , G02F1/225 , H01S5/187
CPC分类号： H01S5/18302 , G02B6/12 , G02F1/01708 , G02F1/2257 , G02F2001/212 , H01S5/026 , H01S5/0265 , H01S5/1032 , H01S5/18308 , H01S5/18327 , H01S5/187 , H01S5/34 , H01S5/423
摘要： A Mach-Zehnder modulator (MZM) is horizontally integrated with a VCSEL. The horizontally-integrated MZM overcomes wavelength dependence problems of horizontally-integrated EA modulators and yet has the same advantages as horizontally-integrated EA modulators in terms of overcoming the ER and modulation range problems associated with the vertically-integrated EA and EO modulators. By overcoming these problems with the existing integrated modulators, the operation speed of the VCSEL is increased and the modulation signal range is extended to allow a wider range of modulation signals and modulation schemes, including large-signal digital modulation schemes.
摘要翻译：马赫 - 曾德尔调制器（MZM）与VCSEL水平集成。横向集成的MZM克服了水平集成的EA调制器的波长依赖性问题，并且与水平集成的EA调制器具有相同的优点，克服了与垂直集成的EA和EO调制器相关的ER和调制范围问题。通过克服现有的集成调制器的这些问题，增加VCSEL的操作速度，并且扩展调制信号范围以允许更宽范围的调制信号和调制方案，包括大信号数字调制方案。

8. 发明授权

US08406266B2 Three-terminal vertical cavity surface emitting laser (VCSEL) and a method for operating a three-terminal VCSEL 有权
标题翻译：三端子垂直腔面发射激光器（VCSEL）和一种三端子VCSEL的操作方法
公开(公告)号：US08406266B2
公开(公告)日：2013-03-26
申请号：US13223300
申请日：2011-08-31
申请人： Chung-Yi Su , Rashit Nabiev , Ramana M. V. Murty
发明人： Chung-Yi Su , Rashit Nabiev , Ramana M. V. Murty
IPC分类号： H01S5/00
CPC分类号： H01S5/06203 , H01S5/06226 , H01S5/18302 , H01S5/18341
摘要： A three-terminal VCSEL is provided that has a reduced fall time that allows the VCSEL to be operated at higher speeds. Methods of operating the three-terminal VCSEL are also provided. The VCSEL can be operated at higher speeds without decreasing the optical output of the VCSEL when it is in the logical HIGH state.
摘要翻译：提供三端VCSEL，其具有减少的下降时间，允许VCSEL以更高的速度运行。还提供了操作三端VCSEL的方法。当VCSEL处于逻辑高电平状态时，VCSEL可以以更高的速度运行，而不会降低VCSEL的光输出。

9. 发明申请

US20120105932A1 Optoelectronic device with controlled temperature dependence of the emission wavelength and method of making same 有权
标题翻译：具有受控温度依赖性的发光波长的光电器件及其制造方法
公开(公告)号：US20120105932A1
公开(公告)日：2012-05-03
申请号：US12925707
申请日：2010-10-28
申请人： Nikolay Ledentsov
发明人： Nikolay Ledentsov
IPC分类号： G02F1/017 , H01S3/063 , G02F1/01 , H01S3/13 , B82Y20/00
CPC分类号： H01S5/1028 , H01S3/109 , H01S5/0651 , H01S5/0654 , H01S5/12 , H01S5/14 , H01S5/18302 , H01S5/18308 , H01S5/2027 , H01S5/2031 , H01S5/423
摘要： A device representing a reflector, for example an evanescent reflector or a multilayer interference reflector, with at least one reflectivity stopband is disclosed. A medium with means of generating optical gain is introduced into the layer or several layers of the reflector. The optical gain spectrum preferably overlaps with the spectral range of the reflectivity stopband. This reflector is attached to multilayer passive cavity structure made of semiconducting, and/or dielectric, and/or metallic materials with the inserted tools of achieving wavelength selection of the optical modes. For example, volume Bragg gratings, distributed feedback gratings or patterns, using of vertical optical cavities surrounded by multilayer Bragg reflectors can be applied. The optical modes of the passive optical cavity partially penetrate into the gain region of the reflector. As a result of the interaction of the gain medium in the reflector region and the passive cavity modes, photons are generated or amplified in the passive cavity at wavelengths defined by the passive cavity modes. The materials selected for the passive cavity layers are chosen to provide the necessary temperature dependence of the effective index of refraction of the related optical modes of the passive cavity and serve as a tool to achieve the controlled temperature dependence of the wavelength of the emitted photons. In particular a complete suppression of the wavelength to temperature variations can be achieved. In another case a strong shift of the resonant wavelength or wavelengths with temperature may be realized. Thus the structure represents an optoelectronic device with controlled temperature dependence of the emission wavelength.
摘要翻译：公开了一种表示具有至少一个反射阻挡带的反射器，例如ev逝反射器或多层干涉反射器的装置。具有产生光学增益的方法的介质被引入反射器的层或几层中。光学增益谱优选与反射阻挡带的光谱范围重叠。该反射器附接到由半导体和/或电介质和/或金属材料制成的多层无源腔结构，其中插入的工具实现光学模式的波长选择。例如，可以应用使用由多层布拉格反射器包围的垂直光学腔的体积布拉格光栅，分布式反馈光栅或图案。无源光学腔的光学模式部分地进入反射器的增益区域。作为反射器区域中的增益介质与无源腔模式的相互作用的结果，在被动空腔模式定义的波长下，在无源腔中产生或放大光子。选择用于无源腔层的材料被选择为提供无源腔的相关光学模式的有效折射率所需的温度依赖性，并且作为实现所发射光子的波长的受控温度依赖性的工具。特别地，可以实现波长对温度变化的完全抑制。在另一种情况下，可以实现谐振波长或波长随温度的强烈偏移。因此，该结构表示具有受控于发射波长的温度依赖性的光电子器件。

10. 发明申请

US20110249697A1 PUSH-PULL MODULATED COUPLED VERTICAL-CAVITY SURFACE-EMITTING LASERS AND METHOD 有权
标题翻译：推拉调制耦合垂直孔表面激光和方法
公开(公告)号：US20110249697A1
公开(公告)日：2011-10-13
申请号：US13163434
申请日：2011-06-17
申请人： Mary K. Brenner , Klein L. Johnson
发明人： Mary K. Brenner , Klein L. Johnson
IPC分类号： H01S5/20 , H01L33/10 , H01S5/42
CPC分类号： H01S5/18302 , H01S5/06226 , H01S5/1021 , H01S5/18313 , H01S5/1833
摘要： A laser system having separately electrically operable cavities for emitting modulated narrow linewidth light with first, second and third mirror structures separated by a first active region between the first and the second and by a second active region between the second and the third. The second mirror structure has twenty of more periods of mirror pairs.
摘要翻译：一种激光系统，其具有单独的电可操作的空腔，用于发射经第一和第二反射镜结构分隔的第一和第二反射镜的调制的窄线宽光以及第二和第三之间的第二有源区。第二个镜子结构具有二十个更多镜像对的周期。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式