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1. 发明公开

US20240239667A1 METHOD FOR PRODUCING MESOPOROUS TRANSITION-METAL CARBIDE LAYERS WITH DEFINED NANOSTRUCTURING, AND USE OF SAID TRANSITION-METAL CARBIDE LAYERS IN ELECTROCATALYSIS 审中-公开
公开(公告)号：US20240239667A1
公开(公告)日：2024-07-18
申请号：US18562076
申请日：2022-05-09
申请人： TECHNISCHE UNIVERSITÄT BERLIN
发明人： Marvin FRISCH , Ralph KRÄHNERT
IPC分类号： C01B32/949 , C01G41/02
CPC分类号： C01B32/949 , C01G41/02 , C01P2002/72 , C01P2004/03 , C01P2004/84 , C01P2006/17
摘要： The invention relates to a method for producing mesoporous metal carbide layer with defined nano-structuring, wherein during a first method step a mesoporous metal oxide layer is made available and in a second step, the metal oxide layer is brought in contact in a reducing atmosphere with a carbon source in the atmosphere, wherein the temperature is at least 650° C. and the heat-up rate ranges from 0.5 to 2 kelvin per minute.

2. 发明申请

US20220181507A1 Physical Forms of MXene Materials Exhibiting Novel Electrical And Optical Characteristics 有权
公开(公告)号：US20220181507A1
公开(公告)日：2022-06-09
申请号：US17678120
申请日：2022-02-23
申请人： Drexel University
发明人： Michael J Ghidiu , Michel W Barsoum , Yury Gogotsi , Aaron Thomas Fafarman , Andrew DeVries Dillon
IPC分类号： H01L31/0224 , H01L33/42 , H01L51/52 , C01B32/921 , C01B32/949 , C01B32/914 , C04B35/56 , C04B35/58
摘要： The present invention(s) is directed to novel conductive Mn+1Xn(Ts) compositions exhibiting high volumetric capacitances, and methods of making the same. The present invention(s) is also directed to novel conductive Mn+1Xn(Ts) compositions, methods of preparing transparent conductors using these materials, and products derived from these methods.

3. 发明授权

US11292723B2 Tungsten carbide powder and production thereof 有权
公开(公告)号：US11292723B2
公开(公告)日：2022-04-05
申请号：US16330559
申请日：2017-09-04
申请人： H.C. Starck Tungsten GmbH
发明人： Tino Saeuberlich , Bernhard Caspers , Tizian Tappe
IPC分类号： C01B32/949 , C22C29/08
摘要： The present invention relates to novel tungsten carbide powder which a specific BET-surface, crystallite number and size, to a method for the production and use thereof.

4. 发明申请

US20200176619A1 Physical Forms of MXene Materials Exhibiting Novel Electrical and Optical Characteristics 审中-公开
公开(公告)号：US20200176619A1
公开(公告)日：2020-06-04
申请号：US16710454
申请日：2019-12-11
申请人： Drexel University
发明人： Michael J. Ghidiu , Michel W. Barsoum , Yury Gogotsi , Aaron Thomas Fafarman , Andrew DeVries Dillon
IPC分类号： H01L31/0224 , H01L33/42 , H01L51/52 , C01B32/921 , C01B32/949 , C01B32/914 , C04B35/56 , C04B35/58
摘要： The present invention(s) is directed to novel conductive Mn+1Xn(Ts) compositions exhibiting high volumetric capacitances, and methods of making the same. The present invention(s) is also directed to novel conductive Mn+1Xn(Ts) compositions, methods of preparing transparent conductors using these materials, and products derived from these methods.

5. 发明申请

US20200171581A1 SURFACE-COATED CUTTING TOOL 审中-公开
公开(公告)号：US20200171581A1
公开(公告)日：2020-06-04
申请号：US16615465
申请日：2019-03-14
申请人： Sumitomo Electric Industries, Ltd.
发明人： Sachiko KOIKE , Yuki UEDA , Keiichi TSUDA
IPC分类号： B23B27/14 , C01B32/949 , C09D1/00 , C09D5/00
摘要： A surface-coated cutting tool includes a substrate and a coating film that coats the substrate, wherein the coating film includes a WC1-x layer composed of a compound represented by WC1-x, where x is more than or equal to 0.54 and less than or equal to 0.58, the compound represented by WC1-x includes a hexagonal crystal structure, and a maximum point of a peak exists in a range of 31.2 to 31.4 eV in a spectrum diagram of a 4f orbital of a tungsten element obtained when measuring the WC1-x layer by an X-ray photoelectron spectroscopy analysis method.

6. 发明授权

US06843824B2 Method of making a ceramic body of densified tungsten carbide 有权
标题翻译：制造致密碳化钨陶瓷体的方法
公开(公告)号：US06843824B2
公开(公告)日：2005-01-18
申请号：US10008806
申请日：2001-11-13
申请人： Linwood Anderson
发明人： Linwood Anderson
IPC分类号： C04B35/56 , B22F1/00 , C01B32/949 , C22C1/05 , C22C29/08
CPC分类号： C04B35/5626 , B22F1/0059 , B22F2001/0066 , B22F2998/10 , B22F2999/00 , C04B35/6261 , C04B35/6264 , C04B35/62695 , C04B35/632 , C04B35/638 , C04B35/6455 , C04B2235/3839 , C04B2235/3843 , C04B2235/404 , C04B2235/405 , C04B2235/422 , C04B2235/528 , C04B2235/5436 , C04B2235/5445 , C04B2235/604 , C04B2235/608 , C04B2235/6562 , C04B2235/658 , C04B2235/6581 , C04B2235/77 , C04B2235/96 , C22C1/051 , C22C1/055 , C22C29/08 , B22F9/04 , B22F1/0003 , B22F9/026 , B22F3/02 , B22F3/1021 , B22F3/10 , B22F3/1017 , B22F2203/01
摘要： A method of making tungsten carbide and a method of making a densified tungsten carbide-containing ceramic body with a transverse rupture strength greater than 300,000 psi are disclosed.
摘要翻译：公开了一种制造碳化钨的方法和制造具有大于300,000psi的横向断裂强度的致密化含碳化钨的陶瓷体的方法。

7. 发明授权

US5613998A Reclamation process for tungsten carbide and tungsten-based materials 失效
标题翻译：碳化钨和钨基材料的回收工艺
公开(公告)号：US5613998A
公开(公告)日：1997-03-25
申请号：US447383
申请日：1995-05-23
申请人： Purnesh Seegopaul , Li Wu
发明人： Purnesh Seegopaul , Li Wu
IPC分类号： B09B3/00 , C01B32/949 , C01G41/00 , C22B7/00 , C22B34/36
CPC分类号： C22B34/36 , C01B31/34 , C01G41/00 , Y02P10/234
摘要： Tungsten carbide and/or tungsten can be recycled by oxidizing the tungsten composition at a temperature greater than 700.degree. C. to form a water insoluble tungsten trioxide. This is then reduced to form tungsten dioxide. The tungsten dioxide is subjected to a low temperature oxidation which forms monoclinic tungsten trioxide. The monoclinic tungsten trioxide is then dissolved in ammonia to form ammonium tungstate. If present, the binder metal such as cobalt is converted into the soluble ammine complex. This can be spray dried and carburized to form tungsten carbide. If the form composition includes cobalt or other binder metal, the ratio of cobalt to tungsten can be adjusted by adding cobalt salts or ammonium metatungstate to the aqueous solution prior to spray drying to form a precursor composition. This is uniquely suitable for forming a cobalt tungsten carbide composition.
摘要翻译：通过在大于700℃的温度下氧化钨组合物可以再循环碳化钨和/或钨，以形成不溶于水的三氧化钨。然后将其还原形成二氧化钨。对二氧化钨进行低温氧化，形成单斜三氧化钨。然后将单斜晶三氧化钨溶解在氨中以形成钨酸铵。如果存在，则将诸如钴的粘合剂金属转化为可溶的氨络合物。这可以喷雾干燥和渗碳以形成碳化钨。如果形式组合物包括钴或其它粘合剂金属，则可以在喷雾干燥之前通过向水溶液中加入钴盐或偏钨酸铵来调节钴与钨的比例，以形成前体组合物。这独特地适用于形成钴碳化钨组合物。

8. 发明授权

US5236740A Methods for coating adherent diamond films on cemented tungsten carbide substrates 失效
标题翻译：涂覆硬质合金基体上的附着金刚石薄膜的方法
公开(公告)号：US5236740A
公开(公告)日：1993-08-17
申请号：US693234
申请日：1991-04-26
申请人： Michael G. Peters , Robert H. Cummings
发明人： Michael G. Peters , Robert H. Cummings
IPC分类号： C01B32/949 , C23C16/02 , C23C16/26 , C23C16/27 , C30B29/04
CPC分类号： C23C16/27 , C23C16/0227 , Y10S427/103 , Y10T428/26 , Y10T428/30 , Y10T428/31678
摘要： A cemented tungsten carbide substrate is prepared for coating with a layer of diamond film by subjecting the substrate surface to be coated to a process which first removes a small amount of the tungsten carbide at the surface of the substrate while leaving the cobalt binder substantially intact. Murakami's reagent is presently preferred. The substrate is then subjected to a process which removes any residue remaining on the surface as a result of the performance of the process which removes the tungsten carbide. A solution of sulfuric acid and hydrogen peroxide is presently preferred. A diamond coated cemented tungsten carbide tool is formed using an unpolished substrate, which may be prepared by etching as described above or by etching in nitric acid prior to diamond film deposition. Deposition of a substantially continuous diamond film may be accomplished by reactive vapor deposition, thermally assisted (hot filament) CVD, plasma-enhanced CVD, or other techniques.

9. 发明授权

US5096689A Process for producing tungsten monocarbide 失效
标题翻译：生产钨单碳化钨的方法
公开(公告)号：US5096689A
公开(公告)日：1992-03-17
申请号：US657278
申请日：1991-02-19
申请人： Charles J. Terry , Harold C. Newman
发明人： Charles J. Terry , Harold C. Newman
IPC分类号： C01B32/949 , C04B35/56 , C01B31/34 , C01G41/00 , C04B35/36
CPC分类号： C04B35/5626 , C01B31/34 , C01P2004/51 , C01P2004/61 , C01P2006/80 , Y10S423/12
摘要： A molten blend of an alkali metal halide containing tungsten is treated with solid particulate carbonaceous reactants, such as natural flake graphite. Tungsten monocarbide is produced having a large percentage of relatively coarse crystals. The crystal morphology is blocky or thick bladed with some equant forms and the carbon is present in the correct stoichiometric amount of 6.13% by weight, thus eliminating any need for carbon additions prior to sintering.
摘要翻译：含有钨的碱金属卤化物的熔融共混物用固体颗粒碳质反应物如天然片状石墨处理。产生具有相当大比例的较大晶体的单体碳化钨。晶体形态为块状或厚度为一些等边形状的刀片，碳以正确的化学计量量存在，为6.13％（重量），从而消除了烧结前对碳添加的任何需要。

10. 发明授权

US5089182A Process of manufacturing cast tungsten carbide spheres 失效
标题翻译：制造碳化钨球体的方法
公开(公告)号：US5089182A
公开(公告)日：1992-02-18
申请号：US421670
申请日：1989-10-16
申请人： Eberhard Findeisen , Klaus Frank , Wilfried Becker , Fritz Muller
发明人： Eberhard Findeisen , Klaus Frank , Wilfried Becker , Fritz Muller
IPC分类号： C01B32/949
CPC分类号： C01B31/34
摘要： To develop a process for manufacturing cast tungsten carbide spheres, without any content of spattering material, as solid spheres with a bulk weight of 0.5-11.5 g/cm.sup.3 for cast tungsten carbide spheres from a screen fraction, and with a granular distribution of 40 .mu.m to 2,000 .mu.m, tungsten carbide is heated to about 150.degree.-300.degree. C. above the melting point, and then the cast tungsten carbide is smelted and granulated in stationary inert gas.
摘要翻译：为了开发一种用于制造没有任何含量的溅射材料的铸造碳化钨球的方法，作为从筛网部分的铸造碳化钨球体的体积重量为0.5-11.5g / cm 3的固体球，并且具有40μm的颗粒分布 m至2,000μm，碳化钨在熔点以上加热至约150-300℃，然后将铸造碳化钨熔融并在固定惰性气体中造粒。

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