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1. 发明授权

US07150792B2 Film deposition system and film deposition method using the same 有权
标题翻译：薄膜沉积系统和使用其的薄膜沉积方法
公开(公告)号：US07150792B2
公开(公告)日：2006-12-19
申请号：US10681345
申请日：2003-10-09
申请人： Hirofumi Fujii , Tadashi Kumakiri , Katuhiko Shimojima
发明人： Hirofumi Fujii , Tadashi Kumakiri , Katuhiko Shimojima
IPC分类号： C23C16/00 , C23C13/08 , B05D3/06
CPC分类号： C23C14/541
摘要： The present invention provides a film deposition system capable of effectively cooling a work having a large volume, and a film deposition method using this system. The film deposition system has, within a vacuum chamber 1, an evaporation source 3 for forming a film on a work 2 and a cooling device 4 for cooling the work 2, characterized in that the work 2 has an internal space 15 communicating with the outside through an opening part 14, and the cooling device 4 is insertable to and drawable from the internal space 15 through the opening part 14 of the work 2 to cool the work 2 from the inside.
摘要翻译：本发明提供能够有效地冷却体积大的工件的成膜系统和使用该系统的成膜方法。膜沉积系统在真空室1内具有用于在工件2上形成膜的蒸发源3和用于冷却工件2的冷却装置4，其特征在于，工件2具有与外部连通的内部空间15 通过开口部分14，并且冷却装置4可通过工件2的开口部分14插入并从内部空间15抽出，以从内部冷却工件2。

2. 发明授权

US4681776A Improved method for double floating transport and processing of wafers 失效
标题翻译：双浮选运输和处理晶圆的改进方法
公开(公告)号：US4681776A
公开(公告)日：1987-07-21
申请号：US823419
申请日：1986-01-28
申请人： Edward Bok
发明人： Edward Bok
IPC分类号： B65G51/03 , H01L21/67 , H01L21/677 , B08B5/04 , B05D5/12 , B44C1/22 , C23C13/08
CPC分类号： H01L21/67784 , B65G51/03
摘要： Method of transporting and processing of substrates. Particularly, transporting the substrate in a double floating mode within a confined passageway and selectively rotating the substrate within the passageway by applying pressurized fluid medium across the planar surface of the substrate. Processing of the substrate may be accomplished during the rotating by directing processing agents such as cleaning medium, rinsing medium, developing agent, etching agent, and the like, onto a surface of the substrate.
摘要翻译： PCT No.PCT / NL85 / 00021 Sec。 371日期1986年1月28日 102（e）日期1986年1月28日PCT Filed 1985年6月3日PCT公布。出版物WO85 / 05757 1985年12月19日。衬底的运输和加工方法。特别地，在限制通道内以双重浮动模式运输基板，并通过在基板的平面表面上施加加压流体介质来选择性地旋转通道内的基板。可以在旋转过程中通过将诸如清洁介质，漂洗介质，显影剂，蚀刻剂等的处理剂引导到基材的表面上来完成基材的加工。

3. 发明授权

US4650539A Manufacture of cadmium mercury telluride 失效
标题翻译：碲化汞制造
公开(公告)号：US4650539A
公开(公告)日：1987-03-17
申请号：US430620
申请日：1982-09-30
申请人： Stuart J. C. Irvine , John B. Mullin
发明人： Stuart J. C. Irvine , John B. Mullin
IPC分类号： C23C14/14 , C23C16/18 , C23C16/30 , C30B25/02 , H01L31/0264 , H01L31/10 , H01L31/18 , C23C13/08 , H01L21/04 , C04B35/00
CPC分类号： C23C16/45561 , C30B25/02 , C30B29/48 , C01P2002/52 , C01P2004/84 , Y10S117/906
摘要： A layer of Cd.sub.x Hg.sub.1-x Te is grown on the surface of a substrate by decomposing alkyls of cadmium and telluride in a mercury atmosphere. The substrate is placed in a vessel containing a mercury bath with the vessel and bath at a suitable pressure and a temperature below the alkyl decomposition temperature. Hydrogen is passed through bubblers separately containing alkyls of cadmium, telluride and, if required, a dopant into the vessel. The substrate is independently heated above the temperature of the vessel so that the alkyls decompose on the substrate. The substrate may be CdTe, a II-VI compound or mixed II-VI alloy. The alkyls may be dimethyl cadmium, diethyl cadmium, dipropyl cadmium, dimethyl telluride, diethyl telluride, dipropyl telluride, dibutyl telluride etc., or hydrogen substituted tellurium alkyls such as hydrogen ethyl telluride etc.
摘要翻译：通过在汞气氛中分解镉和碲化物的烷基，在衬底的表面上生长CdxHg1-xTe层。将衬底置于含有汞浴的容器中并在合适的压力和低于烷基分解温度的温度下加入浴。氢气分别通过含有镉，碲化物的烷基和必要时的掺杂剂进入容器的鼓泡器。将衬底独立地加热到容器的温度以上，使烷基在衬底上分解。基底可以是CdTe，II-VI化合物或混合的II-VI合金。烷基可以是二甲基镉，二乙基镉，二丙基镉，二甲基碲化物，二乙基碲化物，二丙基碲化物，二丁基碲化物等，或氢取代的碲烷基，如氢乙基碲化物等。

4. 发明授权

US4643131A Combined continuous plating apparatus for hot-dip plating and vacuum deposition plating 失效
标题翻译：用于热浸镀层和真空沉积电镀的组合连续电镀装置
公开(公告)号：US4643131A
公开(公告)日：1987-02-17
申请号：US778386
申请日：1985-09-20
申请人： Shozo Umeda , Norio Tsukiji , Takuya Aiko , Toshiharu Kittaka , Heizaburo Furukawa , Kanji Wake , Yoshio Shimozato , Kenichi Yanagi , Mitsuo Kato , Tetsuyoshi Wada
发明人： Shozo Umeda , Norio Tsukiji , Takuya Aiko , Toshiharu Kittaka , Heizaburo Furukawa , Kanji Wake , Yoshio Shimozato , Kenichi Yanagi , Mitsuo Kato , Tetsuyoshi Wada
IPC分类号： C23C2/00 , C23C2/40 , C23C14/56 , C23C28/00 , C23C13/08
CPC分类号： C23C2/40 , C23C14/562
摘要： Disclosed is a combined continuous plating apparatus for hot-dip plating and vacuum deposition plating characterized in that the outlet of the gas reduction annealing furnace of a conventional continuous hot-dip plating apparatus and the inlet of the seal roll chamber of a known continuous vacuum deposition plating apparatus are connected through a pressurized chamber in order to prevent invasion of hydrogen-containing reduction gas into the vacuum deposition chamber, whereby is prevented the possibility of the hydrogen-containing gas causing an explosion should air leak into the vacuum deposition chamber.
摘要翻译：公开了一种用于热浸镀层和真空沉积电镀的组合式连续电镀装置，其特征在于，常规连续热浸镀设备的气体还原退火炉的出口和密封辊室的入口具有已知的连续真空沉积电镀装置通过加压室连接，以防止含氢还原气体侵入真空沉积室，从而防止当气体泄漏到真空沉积室中时，含氢气体引起爆炸的可能性。

5. 发明授权

US4630566A Microwave or UHF plasma improved apparatus 失效
标题翻译：微波或UHF等离子体改进装置
公开(公告)号：US4630566A
公开(公告)日：1986-12-23
申请号：US798309
申请日：1985-11-15
申请人： Jes Asmussen , Donnie K. Reinhard
发明人： Jes Asmussen , Donnie K. Reinhard
IPC分类号： H01J27/16 , H01J37/32 , C23C13/08 , H01J7/46
CPC分类号： H01J37/32256 , H01J27/16 , H01J37/32192 , H01J37/32284 , H01J37/32678
摘要： A method for etching or chemically treating a surface of an article utilizing a radio frequency wave ion generating apparatus which provides a thin disk shaped plasma is described. The plasma disks can have a relatively large diameter (on the order of magnitude 50 centimeters). The plasma disks can be created without using a static magnetic field. The radio frequency waves are preferably microwaves or UHF. The method is particularly useful for ion or free radical irradiation of the surface provided in the plasma or for irradiation of the surface by ions accelerated outside a cavity containing the plasma. Disk plasmas are created over a wide pressure range (10.sup.-4 Torr to 1 atmosphere) and are highly ionized at low pressures. An apparatus adapted for treating a surface of an article with ions from a plasma is also described. The method and apparatus are preferably used for treating a surface forming part of an integrated circuit.
摘要翻译：描述了利用提供薄盘形等离子体的射频波离子产生装置对制品的表面进行蚀刻或化学处理的方法。等离子盘可以具有相对大的直径（大约50厘米数量级）。可以在不使用静态磁场的情况下创建等离子体盘。射频最好是微波或UHF。该方法对于提供在等离子体中的表面的离子或自由基照射或通过在包含等离子体的空腔外加速的离子照射表面特别有用。在宽压力范围（10-4乇至1个大气压）下产生盘等离子体，并在低压下高度电离。还描述了适于用来自等离子体的离子处理制品的表面的装置。该方法和装置优选用于处理形成集成电路部分的表面。

6. 发明授权

US4615299A Plasma CVD apparatus for making photoreceptor drum 失效
标题翻译：用于制造感光鼓的等离子体CVD装置
公开(公告)号：US4615299A
公开(公告)日：1986-10-07
申请号：US709185
申请日：1985-03-07
申请人： Toshiro Matsuyama , Takashi Hayakawa , Yoshimi Kojima , Shiro Narikawa , Shaw Ehara
发明人： Toshiro Matsuyama , Takashi Hayakawa , Yoshimi Kojima , Shiro Narikawa , Shaw Ehara
IPC分类号： C23C16/50 , C23C16/509 , G03G5/08 , G03G5/082 , H01J37/32 , C23C13/08
CPC分类号： H01J37/32082 , C23C16/5093 , G03G5/082 , H01J37/32733 , H01J2237/3321
摘要： A plasma CVD (chemical vapor deposition) apparatus of the capacitance coupling type for effecting the chemical vapor deposition on a drum which includes an air tight chamber made of an electrically conductive material, a support provided in the chamber for supporting the drum inside the chamber in an electrically insulated relationship with the chamber, and an RF power source for supplying RF power to the drum. The chamber is grounded and, therefore, the plasma is generated between the drum and inside wall of the chamber. The apparatus is provided with means for providing a smooth surface on the drum. The drum can be used as a photoreceptor for use in an electrophotographic copying machine.
摘要翻译：电容耦合型的等离子体CVD（化学气相沉积）装置，用于实现在鼓上的化学气相沉积，该鼓包括由导电材料制成的气密室，设置在腔室中用于将鼓内部支撑在腔室内的支架与室的电绝缘关系，以及用于向滚筒提供RF功率的RF电源。腔室接地，因此在鼓室和腔室的内壁之间产生等离子体。该设备设置有用于在滚筒上提供光滑表面的装置。滚筒可用作电子照相复印机中的感光体。

7. 发明授权

US4535228A Heater assembly and a heat-treatment method of semiconductor wafer using the same 失效
标题翻译：加热器组件和使用其的半导体晶片的热处理方法
公开(公告)号：US4535228A
公开(公告)日：1985-08-13
申请号：US539413
申请日：1983-10-06
申请人： Yoshiki Mimura , Tetsuji Arai , Hiroshi Shimizu , Satoru Fukuda
发明人： Yoshiki Mimura , Tetsuji Arai , Hiroshi Shimizu , Satoru Fukuda
IPC分类号： C23C14/54 , C23C16/46 , C30B31/12 , C30B31/22 , H05B3/00 , F27D11/00 , C23C13/08 , H05B1/00
CPC分类号： C30B31/22 , C23C14/541 , C23C16/46 , C30B31/12 , H05B3/0047
摘要： Disclosed herein are a heater assembly and a method for heat-treating a semiconductor wafer using the same. The heater assembly is formed of a heating device having a ring-shaped portion and a holder combined with the heating device detachably each other. A wafer material such as a semiconductor wafer is held on the holder of the heater assembly. A heat-treatment is effected by heating the wafer material by means of application of light radiated from a light source, which is formed of one or more lamps, while heating or after having heated the circumferential portion of the wafer by the heating device of the heater assembly. Owing to the subsidiary heating of the circumferential portion, the wafer may be heat-treated at substantially the same temperature in its entirety. Thus, the heat-treatment does not develop such large "warping" impairing subsequent treatment and/or treatment of the wafer or "slip lines". The heater assembly may be used successfully and conveniently in effecting uniform heating. The detachable structural feature of the holder facilitates its cleaning and this is effective in keeping the atmosphere of the irradiation space always clean.
摘要翻译：本文公开了一种加热器组件和使用其的半导体晶片的热处理方法。加热器组件由具有环形部分的加热装置和与加热装置组合的保持器彼此可拆卸地形成。诸如半导体晶片的晶片材料被保持在加热器组件的保持器上。通过施加从一个或多个灯形成的光源辐射的光来加热晶片材料，同时加热或者在通过加热装置加热晶圆的圆周部分之后加热晶片材料，进行热处理加热器总成。由于周向部分的辅助加热，晶片可以在基本上相同的温度下进行热处理。因此，热处理不会产生妨碍后续处理和/或处理晶片或“滑移线”的这种大的“翘曲”。加热器组件可以成功地且方便地用于均匀加热。保持架的可拆卸结构特征有助于其清洁，并且这对于保持照射空间的气氛始终清洁是有效的。

8. 发明授权

US4534312A Vacuum evaporation apparatus 失效
标题翻译：真空蒸发装置
公开(公告)号：US4534312A
公开(公告)日：1985-08-13
申请号：US527662
申请日：1983-08-30
申请人： Ryohei Shinya , Shin'ichi Miura , Rikio Aozuka
发明人： Ryohei Shinya , Shin'ichi Miura , Rikio Aozuka
IPC分类号： C23C14/54 , C23C13/08
CPC分类号： C23C14/541
摘要： A vacuum evaporation apparatus for depositing an evaporant as a thin film on a substrate comprises a sealed container including a substrate support for mounting thereon the substrate. A heat medium such as of diphenyl, for example, is filled in the substrate support. The heat medium in the substrate support is supplied with heat by a heater. When heated, the heat medium is vaporized and the vapor gas having absorbed heat of evaporation is moved quickly from a high-temperature region to a low-temperature region. The vapor gas in the low-temperature region is supersaturated and turned into the heat medium liquid. The heat energy born as latent heat by the vapor gas is given off to heat the substrate support uniformly. With this thermosiphon action, the substrate can be heated through the substrate support so as to have a uniform overall temperature distribution for forming a uniformly deposited thin film on the substrate surface.
摘要翻译：用于在基板上沉积作为薄膜的蒸发剂的真空蒸发装置包括密封容器，其包括用于在其上安装基板的基板支撑件。诸如二苯的热介质例如填充在基板支撑件中。衬底支架中的热介质由加热器供热。当加热时，热介质被蒸发，并且吸收了蒸发热的蒸汽气体从高温区域迅速移动到低温区域。低温区域的蒸汽气体过饱和并变成热介质液体。放出作为蒸汽气体潜热的热能被均匀地加热衬底支架。利用这种热虹吸作用，可以通过衬底支撑件加热衬底，以便具有均匀的总体温度分布，以在衬底表面上形成均匀沉积的薄膜。

9. 发明授权

US4525375A Method of controllong the deposition of hydrogenated amorphous silicon and apparatus therefor 失效
标题翻译：控制氢化非晶硅沉积的方法及其设备
公开(公告)号：US4525375A
公开(公告)日：1985-06-25
申请号：US479449
申请日：1983-03-28
申请人： Joseph J. Hanak
发明人： Joseph J. Hanak
IPC分类号： C23C16/52 , B05D3/06 , C23C13/08
CPC分类号： C23C16/52
摘要： An improved method and apparatus for the controlled deposition of a layer of hydrogenated amorphous silicon on a substrate. Means is provided for the illumination of the coated surface of the substrate and measurement of the resulting photovoltage at the outermost layer of the coating. Means is further provided for admixing amounts of p type and n type dopants to the reactant gas in response to the measured photovoltage to achieve a desired level and type of doping of the deposited layer.
摘要翻译：一种用于在衬底上受控沉积氢化非晶硅的方法和装置。提供了用于照射衬底的涂覆表面并测量在涂层的最外层处产生的光电压的装置。进一步提供了响应于测量的光电压将p型和n型掺杂剂的量混合到反应气体中以实现沉积层的期望水平和类型的掺杂的手段。

10. 发明授权

US4523544A Apparatus for glow discharge deposition of a thin film 失效
标题翻译：用于辉光放电沉积薄膜的装置
公开(公告)号：US4523544A
公开(公告)日：1985-06-18
申请号：US586450
申请日：1984-03-05
申请人： Nozomu Harada , Hiroshi Ito , Toshikazu Adachi
发明人： Nozomu Harada , Hiroshi Ito , Toshikazu Adachi
IPC分类号： C23C16/26 , C23C16/50 , C23C16/507 , H01J37/32 , H01L21/205 , C23C13/08
CPC分类号： H01J37/32018 , C23C16/507 , H01J37/3244 , H01L21/02532 , H01L21/0262
摘要： A thin amorphous film-forming apparatus comprising a plurality of discharge unit chambers connected in a loop, each provided with a glow discharge generating means and a space for storing a substrate, gas supply and discharge valves are provided between the unit chambers, and means for periodically changing the opening and closing of the valves.
摘要翻译：一种薄的非晶体形成装置，包括多个连接在一个环路上的放电单元室，每个放电单元室设置有辉光放电发生装置和用于存储衬底的空间，气体供应和排出阀设置在单元室之间，周期性地改变阀的打开和关闭。

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