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1. 发明申请

US20230055938A1 PROCESS FOR SYNTHESIZING INDIUM PHOSPHIDE BY LIQUID PHOSPHORUS INJECTION METHOD 有权
公开(公告)号：US20230055938A1
公开(公告)日：2023-02-23
申请号：US17797073
申请日：2020-09-10
申请人： THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION
发明人： Lijie FU , Niefeng SUN , Shujie WANG , Xiaolan LI , Xin ZHANG , Xiaodan ZHANG , Yanlei SHI , Huimin SHAO , Yang WANG
IPC分类号： C30B15/02 , C30B29/40 , C30B15/00
摘要： The present invention relates to a process for synthesizing indium phosphide by liquid phosphorus injection method, which belongs to the field of semiconductor technology. The method comprises: converting gaseous phosphorus into liquid phosphorus through a condenser, injecting the liquid phosphorus into an indium melt while preventing phosphorus vaporization by randomly delivering a low temperature inert gas, and causing an instantaneous reaction between the liquid phosphorus and the liquid indium melt, so that an indium phosphide melt can be synthesized at a relatively low temperature, with advantages of high efficiency, high purity, precise proportioning, large capacity, aiding in the growth of a phosphorus-rich indium phosphide polycrystal and facilitating the growth of an indium phosphide monocrystal. The method includes the steps of indium cleaning, phosphorus charging, furnace loading, communication of condenser, synthesis, preparation of crystals, etc.

2. 发明申请

US20230042620A1 METHOD FOR PRODUCING SiC SINGLE CRYSTAL 有权
公开(公告)号：US20230042620A1
公开(公告)日：2023-02-09
申请号：US17879218
申请日：2022-08-02
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： Naofumi Shinya , Norio Yamagata , Yu Hamaguchi , Takehisa Minowa
IPC分类号： C30B15/02 , C30B29/36
摘要： In SiC single crystal production by the solution process, an alloy of silicon (Si) and a metallic element M that increases the solubility of carbon (C) is pre-impregnated into a SiC sintered body having a relative density of 50 to 90%, following which Si and M are placed in a SiC crucible made of the SiC sintered body and the Si and M within the SiC crucible are melted, forming a Si—C solution. With heating, SiC from the SiC sintered body dissolves into the Si—C solution, efficiently supplying Si and C to the Si—C solution. As a result, Si and C are supplied uniformly and in the proper amount from all areas of contact between the SiC crucible and the Si—C solution, enabling a high-quality SiC single crystal to be stably produced over a long time at a rapid growth rate.

3. 发明申请

US20220135879A1 METHODS AND DEVICES FOR GROWING SCINTILLATION CRYSTALS 有权
公开(公告)号：US20220135879A1
公开(公告)日：2022-05-05
申请号：US17647974
申请日：2022-01-13
申请人： MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
发明人： Yu WANG , Weiming GUAN , Min LI
IPC分类号： C09K11/77 , C30B29/22 , C30B15/02
摘要： The present disclosure relates to a method for growing a crystal. The method includes: weighting reactants according to a molar ratio of the reactants according to a reaction equation for generating the crystal after a first preprocessing operation is performed on the reactants, wherein the first preprocessing operation includes a roasting operation under 800° C.˜1400° C.; placing the reactants on which a second preprocessing operation has been performed into a crystal growth device, wherein the second preprocessing operation includes at least one of an ingredient mixing operation or a pressing operation at room temperature; introducing a flowing gas into the crystal growth device after sealing the crystal growth device; and activating the crystal growth device to execute a crystal growth to grow the crystal based on Czochralski technique.

4. 发明申请

US20210180209A1 METHODS AND DEVICES FOR GROWING OXIDE CRYSTALS IN OXYGEN ATMOSPHERE 有权
公开(公告)号：US20210180209A1
公开(公告)日：2021-06-17
申请号：US17186232
申请日：2021-02-26
申请人： MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
发明人： Yu WANG , Weiming GUAN , Min LI
IPC分类号： C30B29/22 , C01B33/20 , C30B15/02
摘要： The present disclosure discloses a method for growing a crystal in oxygen atmosphere. The method may include compensating a weight of a reactant, introducing a flowing gas, improving a volume ratio of oxygen during a cooling process, providing a heater in a temperature field, and optimizing parameters. According to the method, problems may be solved, for example, cracking and component deviation of the crystal during a crystal growth process, and without oxygen-free vacancy. The method for growing the crystal may have excellent repeatability and crystal performance consistency.

5. 发明授权

US10975300B2 Methods and devices for growing scintillation crystals with short decay time 有权
公开(公告)号：US10975300B2
公开(公告)日：2021-04-13
申请号：US16903342
申请日：2020-06-16
申请人： MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
发明人： Yu Wang , Weiming Guan , Min Li
IPC分类号： C30B15/02 , C09K11/77 , C30B29/22
摘要： The present disclosure discloses a method for growing a crystal with a short decay time. According to the method, a new single crystal furnace and a temperature field device are adapted and a process, a ration of reactants, and growth parameters are adjusted and/or optimized, accordingly, a crystal with a short decay time, a high luminous intensity, and a high luminous efficiency can be grown without a co-doping operation.

6. 发明授权

US10968533B2 Feed system for crystal pulling systems 有权
公开(公告)号：US10968533B2
公开(公告)日：2021-04-06
申请号：US15053870
申请日：2016-02-25
申请人： SunEdison, Inc.
发明人： Stephan Haringer , Gianni Dell'Amico , Giancarlo Zago , Renzo Odorizzi , Giorgio Agostini , Marco Zardoni
IPC分类号： C30B15/04 , C30B15/02 , C30B15/00 , C30B15/12 , C30B15/14 , C30B15/20 , C30B29/06
摘要： A system for growing silicon crystal structures includes a housing defining a growth chamber and a feed system connected to the housing for delivering silicon particles to the growth chamber. The feed system includes a container for holding the silicon particles. The container includes an outlet for discharging the silicon particles. The feed system also includes a channel connected to the outlet such that silicon particles discharged from the container flow through the channel. The feed system further includes a separation valve connected to the channel and to the housing. The separation valve is configured such that a portion of the feed system rotates relative to the housing.

7. 发明授权

US10724149B2 Method of manufacturing CZ silicon wafers, and method of manufacturing a semiconductor device 有权
公开(公告)号：US10724149B2
公开(公告)日：2020-07-28
申请号：US16369419
申请日：2019-03-29
申请人： Infineon Technologies AG
发明人： Johannes Freund , Thomas Wuebben , Helmut Oefner , Hans-Joachim Schulze
IPC分类号： C30B15/04 , C30B15/02 , B28D5/00 , H01L29/739 , C30B15/10 , C30B29/06 , C30B33/00 , B28D5/04 , H01L21/66 , H01L29/66
摘要： In accordance with a method of manufacturing CZ silicon wafers, a parameter of at least two of the CZ silicon wafers is measured. A group of the CZ silicon wafers falling within a tolerance of a target specification is determined. The group of the CZ silicon wafers is divided into sub-groups taking into account the measured parameter. An average value of the parameter of the CZ silicon wafers of each sub-group differs among the sub-groups, and a tolerance of the parameter of the CZ silicon wafers of each sub-group is smaller than a tolerance of the parameter of the target specification. A labeling configured to distinguish between the CZ silicon wafers of different sub-groups is prepared. The CZ silicon wafers falling within the tolerance of the target specification are packaged.

8. 发明授权

US10584426B2 Method for producing single crystal 有权
公开(公告)号：US10584426B2
公开(公告)日：2020-03-10
申请号：US15761573
申请日：2016-09-26
申请人： SHIN-ETSU HANDOTAI CO., LTD.
发明人： Katsuyuki Kitagawa
IPC分类号： C30B15/02 , C30B29/06 , C30B15/20
摘要： The present invention is a method for producing a single crystal, the method in which, after a charging process, a crucible position setting process including a step of placing a lower end of a conical valve below a lower end of a purge tube, a step of performing a movement in such a way that the conical valve and the crucible get relatively closer to each other while measuring changes in the weight of the conical valve, a step of detecting contact between the lower end of the conical valve and an upper end of a raw material based on the rate of change in the weight of the conical valve, a step of measuring the position of the upper end of the raw material based on the position of the lower end of the conical valve at which the contact was detected, and a step of setting the position of the crucible so that the spacing between the lower end of the purge tube and the upper end of the raw material charged in the crucible becomes a predetermined distance and a melting process including a crucible position adjusting step of adjusting the position of the crucible so that the spacing between the lower end of the purge tube and the upper end of the raw material maintains a predetermined distance in accordance with the progress of melting of the raw material are performed. As a result, it is possible to perform control so that the spacing between the lower end of the purge tube and the upper end of the raw material charged in the crucible becomes a predetermined distance.

9. 发明授权

US10577717B2 Systems for selectively feeding chunk polysilicon or granular polysilicon in a crystal growth chamber 有权
公开(公告)号：US10577717B2
公开(公告)日：2020-03-03
申请号：US16352033
申请日：2019-03-13
申请人： GlobalWafers Co., Ltd.
发明人： Seok Min Yun , Seong Su Park , Jun Hwan Ji , Won-Jin Choi , UiSung Jung , Young Jung Lee , Tae Su Koo , Sung-Jin Kim
IPC分类号： C30B15/02 , C30B29/06 , C30B15/20 , C30B15/32 , C30B30/04 , C30B35/00 , B64G1/58 , B64G1/64 , B66D1/12 , G01S11/02 , G01S19/13 , B64G1/10 , G01P15/18
摘要： A feed assembly supplies polysilicon to a growth chamber for growing a crystal ingot from a melt. An example system includes a housing having support rails for receiving one of a granular tray and a chunk tray and a feed material reservoir positioned above the support rails to selectively feed one of either the granular tray or the chunk tray. A valve mechanism and pulse vibrator are also disclosed.

10. 发明申请

US20190249330A1 METHOD OF MANUFACTURING CZ SILICON WAFERS, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20190249330A1
公开(公告)日：2019-08-15
申请号：US16369419
申请日：2019-03-29
申请人： Infineon Technologies AG
发明人： Johannes Freund , Thomas Wuebben , Helmut Oefner , Hans-Joachim Schulze
IPC分类号： C30B15/04 , C30B15/02 , B28D5/00 , H01L29/739 , B28D5/04 , H01L29/66 , H01L21/66
摘要： In accordance with a method of manufacturing CZ silicon wafers, a parameter of at least two of the CZ silicon wafers is measured. A group of the CZ silicon wafers falling within a tolerance of a target specification is determined. The group of the CZ silicon wafers is divided into sub-groups taking into account the measured parameter. An average value of the parameter of the CZ silicon wafers of each sub-group differs among the sub-groups, and a tolerance of the parameter of the CZ silicon wafers of each sub-group is smaller than a tolerance of the parameter of the target specification. A labeling configured to distinguish between the CZ silicon wafers of different sub-groups is prepared. The CZ silicon wafers falling within the tolerance of the target specification are packaged.

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