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1. 发明授权

US11180866B2 Passivation of nonlinear optical crystals 有权
公开(公告)号：US11180866B2
公开(公告)日：2021-11-23
申请号：US14248045
申请日：2014-04-08
申请人： KLA-Tencor Corporation
发明人： Yung-Ho Alex Chuang , Vladimir Dribinski
IPC分类号： C30B33/02 , C30B7/00 , C30B9/00 , G01N21/956 , C30B29/10 , C30B29/22 , G01N21/95 , G01N21/84 , G01N21/87
摘要： The passivation of a nonlinear optical crystal for use in an inspection tool includes growing a nonlinear optical crystal in the presence of at least one of fluorine, a fluoride ion and a fluoride-containing compound, mechanically preparing the nonlinear optical crystal, performing an annealing process on the nonlinear optical crystal and exposing the nonlinear optical crystal to a hydrogen-containing or deuterium-containing passivating gas.

2. 发明申请

US20210115591A1 OPTICAL QUALITY DIAMOND MATERIAL 有权
公开(公告)号：US20210115591A1
公开(公告)日：2021-04-22
申请号：US17081341
申请日：2020-10-27
申请人： ELEMENT SIX TECHNOLOGIES LIMITED
发明人： HERMAN PHILIP GODFRIED , GEOFFREY ALAN SCARSBROOK , DANIEL JAMES TWITCHEN , EVERT PIETER HOUWMAN , WILHELMUS GERTRUDA MARIA NELISSEN , ANDREW JOHN WHITEHEAD , CLIVE EDWARD HALL , PHILIP MAURICE MARTINEAU
IPC分类号： C30B29/04 , C30B25/20 , C30B33/02 , C01B32/25 , C01B32/26 , C30B25/02 , G02B1/00 , C30B9/00 , C30B19/02 , C30B25/16 , C30B33/12 , G02B1/02
摘要： A CVD single crystal diamond material suitable for use in, or as, an optical device or element. It is suitable for use in a wide range of optical applications such as, for example, optical windows, laser windows, optical reflectors, optical refractors and gratings, and etalons. The CVD diamond material is produced by a CVD method in the presence of a controlled low level of nitrogen to control the development of crystal defects and thus achieve a diamond material having key characteristics for optical applications.

3. 发明授权

US10693031B2 Multicrystalline silicon ingots, silicon masteralloy, method for increasing the yield of multicrystalline silicon ingots for solar cells 有权
公开(公告)号：US10693031B2
公开(公告)日：2020-06-23
申请号：US16023317
申请日：2018-06-29
申请人： REC Solar Norway AS
发明人： Gunnar Halvorsen , Anne-Karin Soiland
IPC分类号： C30B29/00 , C30B7/00 , C30B9/00 , H01L31/18 , C30B29/06 , C30B11/06 , C01B33/02
摘要： The present invention comprises directionally solidified multicrystalline silicon ingots, a silicon masteralloy for increasing the efficiency of solar cells made from wafers cut from the silicon ingots, method for increasing the yield when producing multicrystalline silicon ingots from a silicon melt by directional solidification. Further the present invention comprises a method for preparing said silicon masteralloy.

4. 发明授权

US10483428B2 Multicrystalline silicon ingots, silicon masteralloy, method for increasing the yield of multicrystalline silicon ingots for solar cells 有权
公开(公告)号：US10483428B2
公开(公告)日：2019-11-19
申请号：US14916406
申请日：2014-09-09
申请人： ELKEM SOLAR AS
发明人： Gunnar Halvorsen , Anne-Karin Soiland
IPC分类号： C30B7/00 , C30B9/00 , C30B29/00 , C30B11/00 , H01L31/18 , C30B29/06 , C30B11/06 , C01B33/02
摘要： The present invention comprises directionally solidified multicrystalline silicon ingots, a silicon masteralloy for increasing the efficiency of solar cells made from wafers cut from the silicon ingots, method for increasing the yield when producing multicrystalline silicon ingots from a silicon melt by directional solidification. Further the present invention comprises a method for preparing said silicon masteralloy.

5. 发明申请

US20190218685A1 SINGLE-CRYSTAL DIAMOND MATERIAL, SINGLE-CRYSTAL DIAMOND CHIP, AND PERFORATED TOOL 审中-公开
公开(公告)号：US20190218685A1
公开(公告)日：2019-07-18
申请号：US16359638
申请日：2019-03-20
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD. , SUMITOMO ELECTRIC HARDMETAL CORP.
发明人： Yoshiki Nishibayashi , Natsuo Tatsumi , Hitoshi Sumiya , Akihiko Ueda , Yutaka Kobayashi
IPC分类号： C30B29/04 , C30B25/18 , C23C16/27 , C30B25/10 , C30B25/20 , C30B9/00 , B21C3/02
CPC分类号： C30B29/04 , B21C3/025 , C23C16/27 , C23C16/274 , C30B9/00 , C30B25/105 , C30B25/186 , C30B25/20
摘要： In a single-crystal diamond material, a concentration of non-substitutional nitrogen atoms is not more than 200 ppm, a concentration of substitutional nitrogen atoms is lower than the concentration of the non-substitutional nitrogen atoms, and the single-crystal diamond material has a crystal growth main surface having an off angle of not more than 20°. A perforated tool includes a single-crystal diamond die, wherein in the single-crystal diamond die, a concentration of non-substitutional nitrogen atoms is not more than 200 ppm, a concentration of substitutional nitrogen atoms is lower than the concentration of the non-substitutional nitrogen atoms, and the single-crystal diamond die has a low-index plane represented by a Miller index of not less than −5 and not more than 5 in an integer, a perpendicular line of the low-index plane having an off angle of not more than 20° relative to an orientation of a hole for wire drawing.

6. 发明授权

US10047455B2 Diamond grains, method for making same and mixture comprising same 有权
公开(公告)号：US10047455B2
公开(公告)日：2018-08-14
申请号：US14646256
申请日：2013-12-10
申请人： Element Six Abrasives S.A. , Element Six Limited
发明人： Mhlonishwa Cyprian Nzama , Dale Anthony Thomson , Mark Gregory Munday
IPC分类号： C01B32/25 , C30B9/00 , C09K3/14 , B24D3/02 , B24D18/00 , C30B29/04 , B01J3/06
摘要： A method of providing well-shaped diamond grains of at most about 100 microns in size. The method includes providing a synthesis assembly comprising a source of carbon material, a plurality of seed grains on which diamond material can crystallize, and solvent-catalyst material for promoting the crystallization of the diamond grains, and subjecting the synthesis assembly to a condition for growing the diamond grains. The synthesis condition is maintained long enough for at least about half of the carbon material to be converted into the diamond grains.

7. 发明授权

US10041186B2 Method for producing nitride crystal 有权
公开(公告)号：US10041186B2
公开(公告)日：2018-08-07
申请号：US15238945
申请日：2016-08-17
申请人： NGK INSULATORS, LTD.
发明人： Katsuhiro Imai , Makoto Iwai , Masahiro Sakai , Takanao Shimodaira , Shuhei Higashihara , Takayuki Hirao
IPC分类号： C30B9/06 , C30B9/12 , C30B29/38 , C30B9/00 , C30B29/40
摘要： It is used a crucible containing a flux and a source material, a reaction vessel containing the crucible, an intermediate vessel containing the reaction vessel, and a pressure vessel containing the intermediate vessel and used to fill a gas comprising at least a nitrogen atom. When the flux and the source material are melted by heating to grow the nitride crystal, a vapor of an organic compound is provided in a space outside of the reaction vessel and inside of the intermediate vessel.

8. 发明授权

US09960316B2 Method for separating group 13 element nitride layer, and composite substrate 有权
公开(公告)号：US09960316B2
公开(公告)日：2018-05-01
申请号：US15609704
申请日：2017-05-31
申请人： NGK INSULATORS, LTD.
发明人： Katsuhiro Imai , Makoto Iwai , Takanao Shimodaira
IPC分类号： H01L33/00 , C30B9/00 , C30B19/02 , C30B29/40 , C30B33/02 , H01L21/02 , C30B25/18
CPC分类号： H01L33/0079 , C23C16/01 , C23C16/303 , C23C16/4418 , C30B9/00 , C30B9/10 , C30B19/02 , C30B25/18 , C30B29/403 , C30B29/406 , C30B33/00 , C30B33/02 , C30B33/04 , C30B33/06 , H01L21/0254 , H01L21/02639 , H01L33/007
摘要： A composite substrate includes a sapphire substrate and a layer of a nitride of a group 13 element provided on the sapphire substrate. The layer of the nitride of the group 13 element is composed of gallium nitride, aluminum nitride or gallium aluminum nitride. The composite substrate satisfies the following formulas (1), (2) and (3). A laser light is irradiated to the composite substrate from the side of the sapphire substrate to decompose crystal lattice structure at an interface between the sapphire substrate and the layer of the nitride of the group 13 element. 5.0≤(an average thickness (μm) of the layer of the nitride of the group 13 element/a diameter (mm) of the sapphire substrate)≤10.0 . . . (1); 0.1≤ a warpage (mm) of said composite substrate×(50/a diameter (mm) of said composite substrate)2≤0.6 . . . (2); 1.10≤a maximum value (μm) of a thickness of said layer of said nitride of said group 13 element/a minimum value (μm) of said thickness of said layer of said nitride of said group 13 element . . . (3)

9. 发明申请

US20170306525A1 Diffusion assisted crystal hydrothermal and flux growth 审中-公开
公开(公告)号：US20170306525A1
公开(公告)日：2017-10-26
申请号：US14999312
申请日：2016-04-22
申请人： Daniel Smith
发明人： Daniel Smith
IPC分类号： C30B30/06 , C30B29/18 , C30B7/10 , C30B9/00 , C30B29/22 , C30B29/20
CPC分类号： C30B29/18 , C30B7/10 , C30B9/10 , C30B29/22
摘要： The purpose of diffusion assisted crystal hydrothermal growth is to facilitate a greatly increased crystal growth rate that would save time that is precious in such a material and manpower costly process. The assisted crystal growth itself requires the utilization of a piezoelectric shaker connected to the autoclave in which most industrial hydrothermal crystals are grown. The waveform can be modulated to induce transport of nutrient in a singular direction, customized to the topology of the apparatus. As it stands currently, the growth of most crystals that require autoclaves for their production can take anywhere from 3 months to up to 2 years, and accordingly carries many costs, particularly electricity and supervision of the autoclave(s), and other issues that may arise during the growth. While the product of this labor results in high-quality crystals, in reality, these are not at all what is needed outside of the laboratory environment. Using the assisted crystal hydrothermal growth process, average crystal growth can be cut in half, with the resulting crystals consequently being of a slightly lower quality, though still sufficient for most engineering purposes. Another advantage of using a piezoelectric shaker is that an additional sensor can be added to the autoclave to monitor the health of the autoclave using trending data obtained during the growth.

10. 发明申请

US20170263810A1 Method for Separating Group 13 Element Nitride Layer, and Composite Substrate 有权
公开(公告)号：US20170263810A1
公开(公告)日：2017-09-14
申请号：US15609704
申请日：2017-05-31
申请人： NGK INSULATORS, LTD.
发明人： Katsuhiro Imai , Makoto Iwai , Takanao Shimodaira
IPC分类号： H01L33/00 , C30B9/00 , C30B19/02 , C30B29/40 , C30B33/02 , H01L21/02 , C30B25/18
CPC分类号： H01L33/0079 , C23C16/01 , C23C16/303 , C23C16/4418 , C30B9/00 , C30B9/10 , C30B19/02 , C30B25/18 , C30B29/403 , C30B29/406 , C30B33/00 , C30B33/02 , C30B33/04 , C30B33/06 , H01L21/0254 , H01L21/02639 , H01L33/007
摘要： A composite substrate includes a sapphire substrate and a layer of a nitride of a group 13 element provided on the sapphire substrate. The layer of the nitride of the group 13 element is composed of gallium nitride, aluminum nitride or gallium aluminum nitride. The composite substrate satisfies the following formulas (1), (2) and (3). A laser light is irradiated to the composite substrate from the side of the sapphire substrate to decompose crystal lattice structure at an interface between the sapphire substrate and the layer of the nitride of the group 13 element. 5.0≦(an average thickness (μm) of the layer of the nitride of the group 13 element/a diameter (mm) of the sapphire substrate)≦10.0 . . . (1); 0.1≦ a warpage (mm) of said composite substrate×(50/a diameter (mm) of said composite substrate)20.6 . . . (2); 1.10≦a maximum value (μm) of a thickness of said layer of said nitride of said group 13 element/a minimum value (μm) of said thickness of said layer of said nitride of said group 13 element . . . (3)

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