会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 10. 发明申请
    • METHOD OF MEASURING TEMPERATURE OF COMPONENT IN PROCESSING CHAMBER OF SUBSTRATE PROCESSING APPARATUS
    • 测量基板加工设备的组件温度的方法
    • US20130308681A1
    • 2013-11-21
    • US13954021
    • 2013-07-30
    • Tokyo Electron Limited
    • Jun YAMAWAKUChishio KOSHIMIZUTatsuo MATSUDO
    • G01K11/14
    • G01K11/14G01K5/48H01L21/67248
    • A component in a processing chamber of a substrate processing apparatus, where a temperature may be accurately measured by using a temperature measuring apparatus using an interference of a low-coherence light, even when a front surface and a rear surface are not parallel due to abrasion, or the like. A focus ring used in a vacuum atmosphere and of which a temperature is measured includes an abrasive surface exposed to an abrasive atmosphere according to plasma, a nonabrasive surface not exposed to the abrasive atmosphere, a thin-walled portion including a top surface and a bottom surface that are parallel to each other, and a coating member coating the top surface of the thin-walled portion, wherein a mirror-like finishing is performed on each of the top and bottom surfaces of the thin-walled portion.
    • 在基板处理装置的处理室中的部件,其中即使当前表面和后表面由于磨损而不平行时,也可以通过使用具有低相干光干涉的温度测量装置来精确地测量温度 ,等等。 在真空气氛中使用并且测量温度的聚焦环包括暴露于等离子体的研磨气氛的研磨表面,未暴露于研磨性气氛的非磨损表面,包括顶表面和底部的薄壁部分 表面彼此平行;以及涂覆部件,其涂覆在薄壁部分的顶表面上,其中在薄壁部分的每个顶表面和底表面上执行镜像整理。