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1. 发明申请

US20230035090A1 METHOD FOR RETICLE ENHANCEMENT TECHNOLOGY OF A DESIGN PATTERN TO BE MANUFACTURED ON A SUBSTRATE 有权
公开(公告)号：US20230035090A1
公开(公告)日：2023-02-02
申请号：US17444140
申请日：2021-07-30
申请人： D2S, Inc.
发明人： Akira Fujimura , P. Jeffrey Ungar , Nagesh Shirali
IPC分类号： G03F1/70 , G03F1/36 , G03F1/78 , G03F1/74 , G03F7/20 , G06F30/398
摘要： Methods for reticle enhancement technology (RET) for use with variable shaped beam (VSB) lithography include inputting a desired pattern to be formed on a substrate; determining an initial mask pattern from the desired pattern for the substrate; optimizing the initial mask pattern for wafer quality using a VSB exposure system; and outputting the optimized mask pattern. Methods for fracturing a pattern to be exposed on a surface using VSB lithography include inputting an initial pattern; overlaying the initial pattern with a two-dimensional grid, wherein an initial set of VSB shots are formed by the union of the initial pattern with locations on the grid; merging two or more adjacent shots in the initial set of VSB shots to create a larger shot in a modified set of VSB shots; and outputting the modified set of VSB shots.

2. 发明授权

US10564540B2 Method of using equipment method and system for manufacturing mask or display substrate 有权
公开(公告)号：US10564540B2
公开(公告)日：2020-02-18
申请号：US15560086
申请日：2017-03-09
申请人： BOE Technology Group Co., Ltd. , Ordos Yuansheng Optoelectronics Co., Ltd.
发明人： Zhiming Lin , Zhen Wang , Jian Zhang , Chun Chieh Huang
IPC分类号： G03F1/74 , G03F1/72 , G03F7/20 , G03F1/44 , H01L21/68 , G02F1/13
摘要： The present disclosure relates to a method of using an equipment for manufacturing or using a mask or a display substrate; and the method includes: providing a master plate; setting, on the master plate, a plurality of measuring points corresponding to positions of the mask or the display substrate where a pixel position accuracy measurement is to be implemented, according to the mask or the display substrate to be measured; and placing the master plate in a coordinate system of the equipment, and measuring error values between the equipment and the master plate at the measuring points.

3. 发明授权

US10241394B2 Pattern formation method, control device, and semiconductor device manufacture method 有权
公开(公告)号：US10241394B2
公开(公告)日：2019-03-26
申请号：US14848075
申请日：2015-09-08
申请人： TOSHIBA MEMORY CORPORATION
发明人： Keiko Morishita , Shingo Kanamitsu , Hideaki Sakurai
IPC分类号： G03F1/72 , G03F1/74 , G03F1/80
摘要： In a pattern formation method according to an embodiment, a resist pattern is formed on a first film formed on a substrate. In the process for forming the resist pattern, the resist pattern includes a first pattern including a defect in a predetermined region on the first film. Next, a second film is accumulated on the first pattern in the predetermined region. Furthermore, a second pattern is formed in the first film with the resist pattern and the second film. Then, a third pattern is formed in the predetermined region on the first film.

4. 发明授权

US10156783B2 Image mask film scheme and method 有权
公开(公告)号：US10156783B2
公开(公告)日：2018-12-18
申请号：US15443535
申请日：2017-02-27
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Chih-Chiang Tu , Chun-Lang Chen , Jong-Yuh Chang , Boming Hsu , Tran-Hui Shen
IPC分类号： G03F1/74 , G03F1/46 , G03F1/48
摘要： A system and method for repairing a photolithographic mask is provided. An embodiment comprises forming a shielding layer over an absorbance layer on a substrate. Once the shielding layer is in place, the absorbance layer may be repaired using, e.g., an e-beam process to initiate a reaction to repair a defect in the absorbance layer, with the shielding layer being used to shield the remainder of the absorbance layer from undesirable etching during the repair process.

5. 发明授权

US10073338B2 Method for repairing mask defects 有权
公开(公告)号：US10073338B2
公开(公告)日：2018-09-11
申请号：US15263299
申请日：2016-09-12
申请人： Semiconductor Manufacturing International (Beijing) Corporation , Semiconductor Manufacturing International (Shanghai) Corporation
发明人： Kuaixia Ren , Mingjing Tian
IPC分类号： G03F1/50 , G03F1/72 , G03F1/74
CPC分类号： G03F1/74 , G03F1/50 , G03F1/72
摘要： A method for repairing a lithography mask includes determining a defect region in the mask, selecting a predetermined peripheral region of the defect region, depositing a barrier layer on the predetermined peripheral region, and repairing the defect region. The mask may be a MoSi-binary type mask. The barrier layer may compensate for uncertainty occurring during the repair of the defect region. Because the repair processes only require determining the defect region and forming the barrier layer on the periphery of the defect region, and etching the defect, the novel method has a shorter repair time period, better repair effect and improved repair efficiency than conventional methods.

6. 发明授权

US09909218B2 Beam-induced etching 有权
公开(公告)号：US09909218B2
公开(公告)日：2018-03-06
申请号：US12686068
申请日：2010-01-12
申请人： Tristan Bret , Patrik Hoffmann , Michel Rossi , Xavier Multone
发明人： Tristan Bret , Patrik Hoffmann , Michel Rossi , Xavier Multone
IPC分类号： H01L21/302 , C23F4/00 , C23F4/02 , G03F1/72 , G03F1/74
CPC分类号： C23F4/00 , C23F4/02 , G03F1/72 , G03F1/74 , H01J2237/31744
摘要： A method and apparatus for local beam processing using a beam activated gas to etch material are described. Compounds are disclosed that are suitable for beam-induced etching. The invention is particularly suitable for electron beam induced etching of chromium materials on lithography masks. In one embodiment, a polar compound, such as ClNO2 gas, is activated by the electron beam to selectively etch a chromium material on a quartz substrate. By using an electron beam in place of an ion beam, many problems associated with ion beam mask repair, such as staining and riverbedding, are eliminated. Endpoint detection is not critical because the electron beam and gas will not etch significantly the substrate.

7. 发明授权

US09588413B2 Photomask, method of correcting error thereof, integrated circuit device manufactured by using the photomask, and method of manufacturing the integrated circuit device 有权
标题翻译：光掩模，校正误差的方法，使用光掩模制造的集成电路器件以及集成电路器件的制造方法
公开(公告)号：US09588413B2
公开(公告)日：2017-03-07
申请号：US15258163
申请日：2016-09-07
申请人： Samsung Electronics Co., Ltd.
发明人： Sang-hyun Kim , Seong-sue Kim , Dong-gun Lee
IPC分类号： G03F1/24 , G03F1/38 , G03F1/72 , G03F1/74
CPC分类号： G03F1/24 , G03F1/38 , G03F1/72 , G03F1/74
摘要： Provided are a photomask and a method of correcting errors thereof. The photomask includes a multilayer reflection film covering one side surface of a substrate and an energy receiving layer covering the other side surface of the substrate. The method includes determining a local correction position on a frontside surface of the photomask according to a detected error of the photomask, and locally applying an energy beam to a backside surface region of the photomask aligned with the local correction position in a thickness direction of the photomask. The invention may be applicable to structures other than photomasks that benefit from modification of surface heights or selectively applied stress.
摘要翻译：提供一种光掩模和一种校正其错误的方法。光掩模包括覆盖基板的一个侧表面的多层反射膜和覆盖基板的另一侧表面的能量接收层。该方法包括根据检测到的光掩模误差确定光掩模的前表面上的局部校正位置，并将能量束局部地施加到与沿局部校正位置的局部校正位置对准的光掩模的背侧表面区域光掩模本发明可以应用于受到表面高度的改变或选择性施加的应力的光掩模以外的结构的影响。

8. 发明申请

US20150160550A1 PHOTOMASK, METHOD OF CORRECTING ERROR THEREOF, INTEGRATED CIRCUIT DEVICE MANUFACTURED BY USING THE PHOTOMASK, AND METHOD OF MANUFACTURING THE INTEGRATED CIRCUIT DEVICE 有权
标题翻译：照相机，校正其错误的方法，使用光电产生的集成电路装置以及制造集成电路装置的方法
公开(公告)号：US20150160550A1
公开(公告)日：2015-06-11
申请号：US14565087
申请日：2014-12-09
申请人： Sang-hyun KIM , Seong-sue KIM , Dong-gun LEE
发明人： Sang-hyun KIM , Seong-sue KIM , Dong-gun LEE
IPC分类号： G03F1/72 , G03F1/74 , G03F7/40 , G03F1/52 , G03F1/38
CPC分类号： G03F1/24 , G03F1/38 , G03F1/72 , G03F1/74
摘要： Provided are a photomask and a method of correcting errors thereof. The photomask includes a multilayer reflection film covering one side surface of a substrate and an energy receiving layer covering the other side surface of the substrate. The method includes determining a local correction position on a frontside surface of the photomask according to a detected error of the photomask, and locally applying an energy beam to a backside surface region of the photomask aligned with the local correction position in a thickness direction of the photomask. The invention may be applicable to structures other than photomasks that benefit from modification of surface heights or selectively applied stress.
摘要翻译：提供一种光掩模和一种校正其错误的方法。光掩模包括覆盖基板的一个侧表面的多层反射膜和覆盖基板的另一侧表面的能量接收层。该方法包括根据检测到的光掩模误差确定光掩模的前表面上的局部校正位置，并将能量束局部地施加到与沿局部校正位置的局部校正位置对准的光掩模的背侧表面区域光掩模本发明可以应用于受到表面高度的改变或选择性施加的应力的光掩模以外的结构的影响。

9. 发明授权

US08999610B2 Lithography mask repairing process 有权
标题翻译：光刻面膜修复过程
公开(公告)号：US08999610B2
公开(公告)日：2015-04-07
申请号：US13731420
申请日：2012-12-31
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Chien-Hsing Lu , Chung-Hung Lin , Chih-Wei Wen
IPC分类号： G03F1/74
CPC分类号： G03F7/70866 , G03F1/74 , Y10S430/143
摘要： A method includes performing a beam scan on a photolithography mask to repair the photolithography mask. After the beam scan, a radiation treatment is performed on the photolithography mask. The method is performed by an apparatus including a beam generator configured to generate and project a beam on the lithography mask, a radiation source configured to generate a radiation on the lithography mask, and a process gas source configured to release a process gas onto the lithography mask. The process as reacts with a surface portion of the lithography mask to repair the lithography mask. With the radiation treatment, residue process gas on the lithography mask is removed.
摘要翻译：一种方法包括在光刻掩模上执行光束扫描以修复光刻掩模。在光束扫描之后，对光刻掩模进行放射线处理。该方法由包括被配置为在光刻掩模上生成和投影光束的光束发生器的设备执行，被配置为在光刻掩模上产生辐射的辐射源以及被配置为将处理气体释放到光刻上的处理气体源面具。该过程与光刻掩模的表面部分反应以修复光刻掩模。通过辐射处理，去除光刻掩模上的残留处理气体。

10. 发明申请

US20140030641A1 MASK BLANK, TRANSFER MASK, METHOD OF MANUFACTURING A TRANSFER MASK, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 审中-公开
标题翻译：掩模空白，转印掩模，制造转印掩模的方法以及制造半导体器件的方法
公开(公告)号：US20140030641A1
公开(公告)日：2014-01-30
申请号：US14042765
申请日：2013-10-01
申请人： HOYA CORPORATION
发明人： Atsushi KOMINATO , Masahiro Hashimoto , Hiroyuki Iwashita
IPC分类号： G03F1/50 , G03F1/74 , G03F7/20 , G03F1/00
CPC分类号： G03F1/50 , G03F1/00 , G03F1/58 , G03F1/74 , G03F7/2006 , Y10T428/24942
摘要： A mask blank for use in the manufacture of a transfer mask adapted to be applied with ArF excimer laser exposure light is disclosed. The mask blank has, on a transparent substrate, a light-shielding film for forming a transfer pattern. The light-shielding film has an at least two-layer structure including a lower layer and an upper layer from the transparent substrate side. The lower layer is made of a material composed of a transition metal, silicon, and nitrogen and having a nitrogen content of 21 at % or more and a refractive index n of 1.9 or less. The upper layer is made of a material composed of a transition metal, silicon, and nitrogen and having a refractive index n of 2.1 or less. A surface layer of the upper layer contains oxygen and has a nitrogen content of 14 at % or more.
摘要翻译：公开了一种用于制造适于施加ArF准分子激光曝光光的转印掩模的掩模坯料。掩模坯料在透明基板上具有用于形成转印图案的遮光膜。所述遮光膜具有从所述透明基板侧起包括下层和上层的至少两层结构。下层由过渡金属，硅和氮组成的材料制成，氮含量为21原子％以上，折射率n为1.9以下。上层由过渡金属，硅和氮组成的材料制成，折射率n为2.1以下。上层的表面层含有氧，氮含量为14原子％以上。

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