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1. 发明授权

US10276778B2 Crystal pattern forming method, piezoelectric film producing method, piezoelectric element producing method, and liquid discharging head producing method 有权
公开(公告)号：US10276778B2
公开(公告)日：2019-04-30
申请号：US15673611
申请日：2017-08-10
申请人： Ricoh Company, Ltd.
发明人： Xianfeng Chen
IPC分类号： B05D3/00 , C08J7/18 , G21H5/00 , H01L41/39 , B41J2/14 , B41J2/16 , H01L41/09 , H01L41/113 , H01L41/18 , H01L21/02 , H01L41/318 , H01L37/02
摘要： A crystal pattern forming method includes: an electromagnetic wave absorbing layer forming process for forming an electromagnetic wave absorbing layer on one of surfaces of a substrate; an amorphous film forming process for forming an amorphous film on the electromagnetic wave absorbing layer; a mask forming process for forming an electromagnetic wave blocking mask for blocking an electromagnetic wave on the other one of the surfaces of the substrate; and a crystallizing process for causing the substrate to be irradiated with the electromagnetic wave from the other one of the surfaces of the substrate through the electromagnetic wave blocking mask to crystallize a given region in the amorphous film. In the mask forming process, a recessed structure is formed on the other one of the surfaces of the substrate, by selectively removing the other one of the surfaces of the substrate to form a recessed portion.

2. 发明授权

US10179949B2 Method for metalizing polymer substrate and polymer article prepared thereof 有权
公开(公告)号：US10179949B2
公开(公告)日：2019-01-15
申请号：US15217730
申请日：2016-07-22
申请人： BYD COMPANY LIMITED
发明人： Qing Gong , Wei Zhou , Yongliang Sun
IPC分类号： B05D3/00 , C08J7/18 , G21H5/00 , C23C18/18 , C23C18/16 , C23C18/20 , C23C18/40 , C08K3/20 , C23C18/36 , C23C18/54 , C08K3/22
摘要： A method for metalizing a polymer substrate and a polymer article prepared thereof. First, a polymer substrate having a base polymer and at least one metal compound dispersed in the base polymer is provided. Then, a surface of the polymer substrate is irradiated with an energy beam such that a water contact angle of the surface of the polymer substrate is at least 120°. The surface of the polymer substrate is then subjected to chemical plating.

3. 发明授权

US09044778B2 Decorating method 有权
标题翻译：装饰方法
公开(公告)号：US09044778B2
公开(公告)日：2015-06-02
申请号：US13026295
申请日：2011-02-13
申请人： Shinya Fukuda
发明人： Shinya Fukuda
IPC分类号： C08J7/06 , C08F2/48 , B05D7/02 , B05D5/06 , B05D7/00 , C23C14/00 , C08F2/46 , C08J7/18 , B01J19/08 , G21H1/00 , G21H5/00 , H01F41/00 , B05D3/06
CPC分类号： B05D7/02 , B05D3/067 , B05D5/065 , B05D5/067 , B05D7/52 , C23C14/0015
摘要： A decorating method includes the steps of coating a base material with a coating composition comprising 45-95 parts of urethane methacrylate, 1-50 parts of a compound having at least an intra-molecular radical polymeric double bond, and 0.1-15 parts of photopolymerization initiator. The coating is hardened to form an under coat. Vacuum deposition of indium and/or tin in a crystalline structure-independent way is performed to form a non-conductive thin film. Then, a UV-hardening resin, poly acrylic-urethane resin, or acrylate-silica resin is applied, which is hardened to form a hard coat layer.
摘要翻译：装饰方法包括以下步骤：用包含45-95份氨基甲酸酯甲基丙烯酸酯，1-50份至少具有分子内聚合双键的化合物和0.1-15份光聚合的涂料组合物涂覆基材发起人将涂层硬化以形成底涂层。进行与晶体结构无关的方式的铟和/或锡的真空沉积以形成非导电薄膜。然后，涂布UV固化树脂，聚丙烯酸 - 聚氨酯树脂或丙烯酸酯 - 二氧化硅树脂，其被硬化以形成硬涂层。

4. 发明授权

US08420978B2 High throughput, low cost dual-mode patterning method for large area substrates 有权
标题翻译：用于大面积基板的高通量，低成本双模式图案化方法
公开(公告)号：US08420978B2
公开(公告)日：2013-04-16
申请号：US11624505
申请日：2007-01-18
申请人： Kanti Jain , Junghun Chae , Sreeram Appasamy
发明人： Kanti Jain , Junghun Chae , Sreeram Appasamy
IPC分类号： B23K26/16 , H01L21/44 , B29C35/08 , G21H5/00
CPC分类号： H01L21/0272 , H01L21/0275 , H01L27/124 , H01L27/1288
摘要： A high-throughput, low cost, patterning platform is provided that is an alternative to conventional photolithography and direct laser ablation patterning techniques. The processing methods are useful for making patterns of microsized and/or nanosized structures having accurately selected physical dimensions and spatial orientation that comprise active and passive components of a range of microelectronic devices. Processing provided by the methods is compatible with large area substrates, such as device substrates for semiconductor integrated circuits, displays, and microelectronic device arrays and systems, and is useful for fabrication applications requiring patterning of layered materials, such as patterning thin film layers in thin film electronic devices.
摘要翻译：提供了高通量，低成本的图形化平台，其是常规光刻和直接激光烧蚀图案化技术的替代。这些处理方法对于制造具有精确选择的物理尺寸和空间取向的微尺寸和/或纳米尺寸结构的图案是有用的，其包括一系列微电子器件的有源和无源部件。通过该方法提供的处理与诸如半导体集成电路的器件衬底，显示器和微电子器件阵列和系统的大面积衬底兼容，并且可用于需要图案化层状材料的制造应用，例如薄的薄膜层电影电子设备。

5. 发明授权

US08277903B2 Synthesis and applications of soluble pentacene precursors and related compounds 有权
标题翻译：可溶性并五苯前体及相关化合物的合成与应用
公开(公告)号：US08277903B2
公开(公告)日：2012-10-02
申请号：US12395920
申请日：2009-03-02
申请人： Tahsin J. Chow , Chung-Chih Wu , Ta-Hsien Chuang , Hsing-Hung Hsieh , Hsin-Hui Huang
发明人： Tahsin J. Chow , Chung-Chih Wu , Ta-Hsien Chuang , Hsing-Hung Hsieh , Hsin-Hui Huang
IPC分类号： C08J7/04 , C08J7/18 , B05D3/00 , G21H5/00 , C07F15/00 , C07C49/00
CPC分类号： C07C25/22 , B05D1/327 , B05D3/0254 , B05D3/06 , C07C49/665 , C07C49/683 , C07C49/753 , C07C205/45 , C07C255/56 , C07C2603/86 , C07C2603/90 , C07D333/08 , H01L51/0003 , H01L51/0055 , H01L51/0068 , Y02E10/549
摘要： The present disclosure relates to methods and systems for synthesis of bridged-hydropentacene, hydroanthracene and hydrotetracene from the precursor compounds pentacene derivatives, tetracene derivatives, and anthracene derivatives. The invention further relates to are methods and systems for forming thin films for use in electrically conductive assemblies, such as semiconductors or photovoltaic devices.
摘要翻译：本公开内容涉及从前体化合物并五苯衍生物，并四苯衍生物和蒽衍生物合成桥联 - 水合氢，氢蒽和氢化四苯的方法和系统。本发明还涉及用于形成用于诸如半导体或光伏器件的导电组件中的薄膜的方法和系统。

6. 发明授权

US07972662B2 Substrate for information recording medium, information recording medium and process for producing information recording medium 有权
标题翻译：用于信息记录介质的基板，信息记录介质和用于产生信息记录介质的处理
公开(公告)号：US07972662B2
公开(公告)日：2011-07-05
申请号：US11711669
申请日：2007-02-28
申请人： Mikio Ikenishi , Xuelu Zou , Kenji Yamanaka , Junichi Horikawa
发明人： Mikio Ikenishi , Xuelu Zou , Kenji Yamanaka , Junichi Horikawa
IPC分类号： C23C14/00 , C23C14/32 , B05D3/00 , C08J7/18 , G21H5/00 , B32B17/06
CPC分类号： C03C3/083 , G11B5/7315 , G11B5/8404
摘要： An information recording medium is prepared by forming a multi-layered film, including an information recording layer, on a substrate by transferring the substrate heated at an average heating rate of at least 10° C./second in a heating zone, along consecutive film-forming zones, and consecutively forming layers forming the multi-layered film in the film-forming zones.
摘要翻译：通过在基板上形成包含信息记录层的多层膜，通过在加热区中以平均加热速度至少10℃/秒加热的基板沿着连续的膜转移来制备信息记录介质并且在成膜区域中连续形成形成多层膜的层。

7. 发明授权

US07858158B2 Plasma deposition apparatus and method for making polycrystalline silicon 有权
标题翻译：等离子体沉积装置及制造多晶硅的方法
公开(公告)号：US07858158B2
公开(公告)日：2010-12-28
申请号：US12433188
申请日：2009-04-30
申请人： Mohd A. Aslami , Dau Wu , DeLuca Charles
发明人： Mohd A. Aslami , Dau Wu , DeLuca Charles
IPC分类号： H05H1/24 , B01J19/08 , G21H1/00 , G21H5/00 , H01F41/00
CPC分类号： C23C16/24 , C23C16/513 , H05H1/30
摘要： A plasma deposition apparatus for making polycrystalline silicon including a chamber for depositing said polycrystalline silicon, the chamber having an exhaust system for recovering un-deposited gases; a support located within the deposition chamber for holding a target substrate having a deposition surface, the deposition surface defining a deposition zone; at least one induction coupled plasma torch located within the deposition chamber and spaced apart from the support, the at least one induction coupled plasma torch producing a plasma flame that is substantially perpendicular to the deposition surface, the plasma flame defining a reaction zone for reacting at least one precursor gas source to produce the polycrystalline silicon for depositing a layer of the polycrystalline silicon the deposition surface.
摘要翻译：一种用于制造多晶硅的等离子体沉积设备，包括用于沉积所述多晶硅的室，所述室具有用于回收未沉积气体的排气系统; 位于所述沉积室内的用于保持具有沉积表面的目标基底的支撑体，所述沉积表面限定沉积区; 至少一个感应耦合等离子体焰炬，其位于所述沉积室内并与所述支撑件间隔开，所述至少一个感应耦合等离子体焰炬产生基本垂直于所述沉积表面的等离子体火焰，所述等离子体火焰限定用于在至少一个前体气体源，以产生用于沉积多晶硅层沉积表面的多晶硅。

8. 发明授权

US07820228B2 Medical device and manufacturing method of colored medical device 有权
标题翻译：彩色医疗器械的医疗器械及制造方法
公开(公告)号：US07820228B2
公开(公告)日：2010-10-26
申请号：US11545777
申请日：2006-10-11
申请人： Hiroshi Yamada , Yosuke Taniguchi , Kenji Hioki , Chisaka Aoyama
发明人： Hiroshi Yamada , Yosuke Taniguchi , Kenji Hioki , Chisaka Aoyama
IPC分类号： B05D3/06 , B29C71/02 , G21H5/00
CPC分类号： A61M25/09 , A61M25/0045 , A61M2025/09108
摘要： A method for the manufacture of a medical wire includes manufacturing a fluororesin-coated wire and irradiating with infrared radiation. The fluororesin-coated wire is manufactured with a fluororesin-containing liquid, or fluororesin powder body being applied to the outer circumference of a superelastic alloy wire or of a resin-coated superelastic alloy wire. The fluororesin-coated wire is irradiated with a defined wavelength of infrared radiation for a defined period of time.
摘要翻译：医疗用线的制造方法包括制造含氟树脂被覆线并照射红外线。氟树脂涂布线由含氟树脂的液体制成，或者氟树脂粉末体涂覆在超弹性合金丝或树脂涂层的超弹性合金丝的外周。用限定波长的红外辐射照射含氟树脂涂层的电线一段规定的时间。

9. 发明授权

US07803433B2 Amorphous carbon film forming method and device 有权
标题翻译：无定形碳膜成膜方法及装置
公开(公告)号：US07803433B2
公开(公告)日：2010-09-28
申请号：US10544674
申请日：2004-02-12
申请人： Junji Ando , Naoyuki Sakai , Toshiyuki Saito , Kazuyuki Nakanishi , Hiroyuki Mori , Hideo Tachikawa , Kyouji Itou , Mikio Fujioka , Yoshiyuki Funaki
发明人： Junji Ando , Naoyuki Sakai , Toshiyuki Saito , Kazuyuki Nakanishi , Hiroyuki Mori , Hideo Tachikawa , Kyouji Itou , Mikio Fujioka , Yoshiyuki Funaki
IPC分类号： H05H1/24 , H01F41/00 , G21H5/00 , G21H1/00 , B01J19/08
CPC分类号： C23C16/4583 , C23C16/272 , C23C16/277 , C23C16/45563 , C23C16/45578 , C23C16/4587 , C23C16/509 , C23C16/52 , F16D13/64 , F16D2250/0046 , H01J37/3244 , H01J37/32779
摘要： An amorphous carbon film forming apparatus according to the present invention is characterized by being provided with a film forming furnace 11; plural workpiece fixtures 23 for supporting plural plate-like workpieces 22 in a state that the same are piled up vertically in parallel with the interval between facing surfaces of two vertically adjoining of the plate-like workpieces 22 being in a range of 2 to 30 millimeters, the plural workpiece fixtures 23 being arranged within the film forming furnace 11 at a regular angular interval on a circle and being connected to a negative electrode; nozzles 31, 32 provided for supplying a processing gas and including at least one nozzle arranged at a center of the circle on which the plural workpiece fixtures 23 are arranged and plural nozzles arranged at a regular angular interval on another circle which surrounds the workpieces fixtures 23 radially outside thereof; and a plasma power supply connected to at least the workpiece fixtures 23. By controlling the supply gas pressure to be in a range of 13 to 1,330 Pa and a sheath width to be made in a range of 2 to 30 mm, the discharge is kept stably. As a consequence, it can be realized to form amorphous carbon films efficiently at a low cost.
摘要翻译：根据本发明的无定形碳膜形成装置的特征在于设置有成膜炉11; 多个用于支撑多个板状工件22的工件夹具23处于2至30毫米的范围内的状态下，垂直于两个垂直相邻的板状工件22的相对表面之间的间隔垂直堆叠。多个工件固定件23以规定的角度间隔布置在成膜炉11内并连接到负极; 用于供给处理气体的喷嘴31,32，并且包括布置在其上布置有多个工件固定件23的圆的中心处的至少一个喷嘴和在围绕工件固定件23的另一个圆周上以规则的角度间隔布置的多个喷嘴径向地在其外面; 以及与至少工件夹具23连接的等离子体电源。通过将供给气体压力控制在13〜1330Pa的范围内，将鞘宽度设定在2〜30mm的范围内，进行放电稳定地因此，可以实现以低成本有效地形成无定形碳膜。

10. 发明授权

US07803432B2 Method of controlling contact angle of water 有权
标题翻译：控制水接触角的方法
公开(公告)号：US07803432B2
公开(公告)日：2010-09-28
申请号：US10573967
申请日：2004-10-01
申请人： Junko Takahashi , Hidenori Nagai , Shinichi Wakida
发明人： Junko Takahashi , Hidenori Nagai , Shinichi Wakida
IPC分类号： G21H5/00 , B05D5/00
CPC分类号： B01J19/00 , Y10T137/218 , Y10T137/2191 , Y10T137/2196 , Y10T428/24802
摘要： The present invention fundamentally differs from conventional methods in which an external force is directly applied to a surface of an article to be modified, and relates to a method of hydrophobilization (increasing a contact angle of water) which comprises bringing a hydrophobilization substance (a substance for increasing a contact angle of water) released from a material of another location into contact with a surface of an article, especially an article surface being hydrophilic (having a small contact angle of water) in its initial state without applying an external force on the article surface, further a method of control being capable of noncontact switching of a contact angle of water, which comprises conducting hydrophilization of an article surface subjected to hydrophobilization by the above-mentioned method in a noncontact manner and repeating these hydrophobilization and hydrophilization, and a method of pattern formation using the mentioned methods. According to those methods, hydrophobilization and hydrophilization can be carried out in the noncontact manner, and by selecting a material, degrees of hydrophobilization and hydrophilization can be adjusted.
摘要翻译：本发明与其中外力直接施加到待改性制品的表面的常规方法基本上不同，并且涉及疏水化（增加水的接触角）的方法，其包括使疏水化物质（物质用于增加从另一位置的材料释放的材料与制品表面特别是在其初始状态下具有亲水性（具有小的接触角的水分）的制品表面，而不对外界施加外力进一步的控制方法能够非接触地切换水的接触角，其包括通过上述方法以非接触方式进行疏水化的物品表面亲水化并重复这些疏水化和亲水化，以及使用上述方法形成图案的方法。根据这些方法，可以以非接触的方式进行疏水化和亲水化，通过选择材料，可以调节疏水化程度和亲水化程度。

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