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    • 4. 发明授权
    • Magnetostatic-wave device
    • 静电波装置
    • US6028495A
    • 2000-02-22
    • US949272
    • 1997-10-13
    • Toshihito Umegaki
    • Toshihito Umegaki
    • H01P1/23H01P3/00H03H2/00H01P1/218H01P1/32
    • H03H2/001
    • A magnetostatic-wave device includes a dielectric substrate on which parallel first electrically conductive lines are formed. A magnetostatic-wave device formed of a gadolinium-gallium-garnet (GGG) substrate on which yttrium-iron-garnet (YIG) thin films are formed is disposed on the first electrically conductive lines. Crossed second electrically conductive lines are formed on a YIG thin film. Lands are formed at both ends of these electrically conductive lines and are connected to each other with bonding wire to form one electrically conductive line. Input and output ends are formed between both ends of this electrically conductive line and the ground.
    • 静磁波装置包括其上形成有平行的第一导电线的电介质基板。 由形成有钇 - 铁 - 石榴石(YIG)薄膜的钆镓石榴石(GGG)基板形成的静磁波装置设置在第一导电线上。 交叉的第二导电线形成在YIG薄膜上。 在这些导电线的两端形成有土地,并且用接合线彼此连接以形成一个导电线。 输入端和输出端形成在该导电线的两端和地之间。