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    • 5. 发明授权
    • Temperature compensation of voltage controlled resistor
    • 电压控制电阻的温度补偿
    • US3715609A
    • 1973-02-06
    • US3715609D
    • 1971-08-17
    • TEKTRONIX INC
    • HALLEN T
    • H03F1/30H03F3/345H03G3/10H03H5/12H03H11/54H03K3/26
    • H03F3/3455H03F1/302H03F1/306
    • A voltage controlled resistor of the junction gate field effect type is temperature compensated by a circuit including the emitter-base junction of a bipolar transistor and also a temperature responsive resistor having a temperature sensitivity which is substantially the same as that of the channel of the voltage controlled resistor. The temperature responsive resistor and the bipolar transistor are subjected to substantially the same temperature conditions as the voltage variable resistor and the voltage responsive resistor and emitter-base junction of the bipolar transistor are connected in series with a current source. The voltage drops across such emitter-base junction and voltage responsive resistor vary with such temperature and are employed as parts of a reverse-bias potential applied between the gate and channel of the voltage controlled resistor.
    • 结栅场效应型的电压控制电阻器由包括双极晶体管的发射极 - 基极结的电路以及具有与电压的通道基本上相同的温度灵敏度的温度响应电阻器进行温度补偿 受控电阻。 温度响应电阻器和双极晶体管经受与电压可变电阻器和双极晶体管的电压响应电阻器和发射极 - 基极结点电流源串联的基本相同的温度条件。 这种发射极 - 基极结和电压响应电阻之间的电压降随着这种温度而变化,并且被用作施加在压控电阻器的栅极和沟道之间的反向偏置电位的一部分。
    • 9. 发明授权
    • FET monolithic microwave integrated circuit variable slope gain-equalizer
    • FET单片微波集成电路可变斜率增益均衡器
    • US4967169A
    • 1990-10-30
    • US388094
    • 1989-07-31
    • Horng-Jye SunBruce C. Morley
    • Horng-Jye SunBruce C. Morley
    • H03F1/32H03H11/04H03H11/24H03H11/54
    • H03H11/245H03F1/3241H03H11/04H03H11/54
    • A MMIC variable slope gain-equalizer varies the conductance of depletion mode Schottky gate FETs to controllably insert frequency dependent resonant members in a modified bridged-T configuration. Resistors connected from circuit input port to output port define the arms of the "T" and a T-node to which a first frequency dependent resonant member is connected in series with a first FET. A second FET and a second frequency dependent resonant member are each connected in series between the circuit ports, bridging the T. Preferably a third frequency dependent resonant member is series connected with the second frequency dependent member. Each frequency dependent resonant member resonates at about the highest frequency of interest, typically about 18 GHz. When the first FET is on and the second FET off, maximum attenuation at lower frequencies is inserted into the circuit, and when the first FET is off and the second FET on, minimum attenuation is inserted at lower frequencies. Intermediate levels of FET conductivity produce intermediate levels of frequency dependent attenuation. In a first embodiment, FET conductivity is controlled by two push-pull control voltages. A second embodiment uses a single control voltage to vary conductivity. The first embodiment operates at about 0-18 GHz, while the second embodiment operates at about 2-18 GHz. Each embodiment realizes a variable slope gain-versus frequency temperature function of between about -0.6 dB/GHz to about +0.2 dB/GHz with a 0 to +3VDC control voltage change.
    • MMIC可变斜率增益均衡器改变耗尽型肖特基栅极FET的电导,以可变地插入经修改的桥接T配置中的频率相关谐振元件。 从电路输入端口连接到输出端口的电阻器定义了与第一FET串联连接的第一频率相关谐振元件的“T”和T形节点的臂。 第二FET和第二频率相关谐振元件各自串联在电路端口之间,桥接T。优选地,第三频率相关谐振元件与第二频率依赖元件串联连接。 每个频率相关的谐振元件在大约最感兴趣的频率下谐振,通常约为18GHz。 当第一个FET导通并且第二个FET关闭时,较低频率的最大衰减被插入到电路中,当第一个FET关闭并且第二个FET导通时,在较低的频率插入最小的衰减。 中等水平的FET电导率产生中等水平的频率相关衰减。 在第一实施例中,FET电导率由两个推挽控制电压控制。 第二实施例使用单个控制电压来改变电导率。 第一实施例在约0-18GHz下工作,而第二实施例在约2-18GHz下工作。 每个实施例在0至+ 3VDC控制电压变化之间实现约-0.6dB / GHz至约+0.2dB / GHz的可变斜率增益对频率温度函数。