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1. 发明申请

US20230115592A1 BULK ACOUSTIC WAVE DEVICE PACKAGING WITH REDISTRIBUTION USING SILICON DIOXIDE INSULATION 有权
公开(公告)号：US20230115592A1
公开(公告)日：2023-04-13
申请号：US17938114
申请日：2022-10-05
申请人： SKYWORKS SOLUTIONS, INC.
发明人： Atsushi Takano , Mitsuhiro Furukawa , Yusuke Horiguchi
IPC分类号： H03H9/02 , H03H3/007 , H03H9/24 , H03H9/15
摘要： An electronic device package comprises an electrical device disposed on a base substrate, a conductive column in electrical communication with the electrical device and having a first end bonded to the base substrate, a cap substrate disposed over the electrical device and bonded to a second end of the conductive column, a layer of dielectric material disposed on the lower surface of the base substrate, a through substrate via in electrical communication with the conductive column and passing through the base substrate and the layer of dielectric material, a redistribution layer disposed on the layer of dielectric material, and a contact pad formed on the redistribution layer and in electrical communication with the through substrate via through the redistribution layer, the contact pad being horizontally displaced from a position directly below the through substrate via.

2. 发明授权

US11581871B1 Nonlinear acoustic medium 有权
公开(公告)号：US11581871B1
公开(公告)日：2023-02-14
申请号：US16269499
申请日：2019-02-06
申请人： FemtoDx, Inc.
发明人： Pritiraj Mohanty
IPC分类号： H03H9/54 , H03H9/52 , H03H9/24 , H03B19/00 , H03H9/02 , H03H9/00 , H03H9/15
摘要： Nonlinear acoustic media and related methods are described herein. The nonlinear acoustic media are configured to generate higher harmonic output signals from a single-frequency input signal. The higher harmonic output signals can be generated through the coupling of an acoustic dielectric medium to a nonlinear piezoelectric medium having four ports.

3. 发明申请

US20230006129A1 TRANSVERSELY-EXCITED FILM BULK ACOUSTIC RESONATOR WITH REDUCED SUBSTRATE TO CONTACT BUMP THERMAL RESISTANCE 有权
公开(公告)号：US20230006129A1
公开(公告)日：2023-01-05
申请号：US17507550
申请日：2021-10-21
申请人： Resonant Inc.
发明人： Albert Cardona , Chris O'Brien , Greg Dyer
IPC分类号： H01L41/29 , H03H9/02 , H03H9/54 , H03H9/15 , H01L41/09 , H01L41/27
摘要： An acoustic resonator device with low thermal impedance has a substrate and a single-crystal piezoelectric plate having a back surface attached to a top surface of the substrate via a bonding oxide (BOX) layer. An interdigital transducer (IDT) formed on the front surface of the plate has interleaved fingers disposed on the diaphragm, the overlapping distance of the interleaved fingers defining an aperture of the resonator device. Contact pads are formed at selected locations over the surface of the substrate to provide electrical connections between the IDT and contact bumps to be attached to the contact pads. The piezoelectric plate is removed from at least a portion of the surface area of the device beneath each of the contact pads to provide lower thermal resistance between the contact bumps and the substrate.

4. 发明授权

US11509277B2 Piezoelectric single crystal silicon carbide microelectromechanical resonators 有权
公开(公告)号：US11509277B2
公开(公告)日：2022-11-22
申请号：US16368802
申请日：2019-03-28
申请人： HRL Laboratories, LLC
发明人： Raviv Perahia , Logan D. Sorenson , Lian X. Huang , Jeremy Bregman
IPC分类号： H03H3/02 , H03H9/205 , H03H9/02 , H03H9/05 , H03H9/13 , H03H9/17 , H03H9/15
摘要： A resonator has a resonator body and a frame at least partially surrounding the resonator body, the resonator body being coupled to the frame by at least one tether. The resonator body, frame and at least one tether comprise silicon carbide. A plurality of interdigitated electrodes are disposed on the silicon carbide resonator body. The resonator body preferably comprises 6H silicon carbide and preferably has a crystalline c-axis oriented generally parallel to a thickness direction of the resonator body.

5. 发明申请

US20220360248A1 BULK ACOUSTIC WAVE FILTER AND MANUFACTURING METHOD THEREOF, COMMUNICATION DEVICE 有权
公开(公告)号：US20220360248A1
公开(公告)日：2022-11-10
申请号：US17874959
申请日：2022-07-27
申请人： Newsonic Technologies
发明人： Jian WANG
IPC分类号： H03H9/13 , H03H9/15 , H03H9/05 , H03H9/02
摘要： A bulk acoustic wave filter, a manufacturing method thereof, and a communication device are disclosed. The bulk acoustic wave filter includes a first filter substrate and a second filter substrate; the first filter substrate includes a first base substrate and a first resonator, a first electrode pad and a first auxiliary pad arranged on the first base substrate; the second filter substrate includes a second base substrate and a second resonator, a second electrode pad and a second auxiliary pad arranged on the second base substrate, the first filter substrate is arranged opposite to the second filter substrate, the first electrode pad and the second auxiliary pad are in contact with each other, and the second electrode pad and the first auxiliary pad are in contact with each other.

6. 发明申请

US20220286106A1 ELECTROACOUSTIC RESONATOR 有权
公开(公告)号：US20220286106A1
公开(公告)日：2022-09-08
申请号：US17597467
申请日：2020-07-14
申请人： RF360 EUROPE GMBH
发明人： Matthias PERNPEINTNER
IPC分类号： H03H9/02 , H03H9/15 , H03H9/25
摘要： An electroacoustic resonator comprises a substrate (3) with a piezoelectric material and an interdigital electrode structure on a top side (33) of the substrate. The electrode structure comprises a first electrode (1) and a second electrode (2) each with a busbar (20) and a plurality of fingers (10). The fingers of both electrodes interdigitate. The region of the top side between the two busbars is subdivided into two barrier regions (113), two trap regions (112) and one track region (111), the trap regions being located between the two barrier regions and the track region being located between the two trap regions. At least some fingers each comprise one barrier portion (13), two trap portions (12) and one track portion (11), wherein the barrier portion is associated with the barrier region closest to the busbar assigned to the finger, the trap portions are each associated with one of the trap regions and the track portion is associated with the track region. The fingers are configured such that the velocity of a main mode of surface acoustic waves is smaller in the trap regions than in the track region. Each electrode comprises a plurality of stub fingers (30) being shorter than the fingers. Each stub finger is associated only with the barrier region closest to the busbar assigned to the stub finger. The electrodes are configured such that a velocity of the main mode in the barrier regions is greater than in the track region.

7. 发明授权

US11326881B2 Vibrator device, circuit device, method of manufacturing vibrator device, electronic apparatus, and vehicle 有权
公开(公告)号：US11326881B2
公开(公告)日：2022-05-10
申请号：US16242129
申请日：2019-01-08
申请人： SEIKO EPSON CORPORATION
发明人： Hiroshi Kiya
IPC分类号： H01L41/04 , H03H9/10 , H03H9/05 , G01C19/5628 , G01C19/5621 , H03H9/15 , H03H3/04 , H01L41/09 , H03H9/02
摘要： A vibrator device includes a vibrator having a first and second electrode, and a circuit device having a drive circuit adapted to drive the vibrator, and an output circuit adapted to output a monitor signal corresponding to a vibration characteristic of the vibrator while driven by the drive circuit. The circuit device includes a first terminal electrically connected to the first electrode, and from which an output signal from the drive circuit to the vibrator is output, a second terminal electrically connected to the second electrode, and to which an input signal from the vibrator to the drive circuit is input, a third terminal electrically separated from the first electrode and the second electrode, and a monitor terminal from which the monitor signal is output. The vibrator is supported on an active surface side of the circuit device using conductive bumps respectively to the first, second, and third terminal.

8. 发明申请

US20220085788A1 INTEGRATED STRUCTURE OF CRYSTAL RESONATOR AND CONTROL CIRCUIT AND INTEGRATION METHOD THEREFOR 有权
公开(公告)号：US20220085788A1
公开(公告)日：2022-03-17
申请号：US17419619
申请日：2019-11-05
申请人： NINGBO SEMICONDUCTOR INTERNATIONAL CORPORATION (SHANGHAI BRANCH)
发明人： Xiaoshan QIN
IPC分类号： H03H9/15 , H03H9/13 , H03H9/10 , H03H9/05
摘要： An integrated structure of crystal resonator and control circuit (110) and an integration method therefor. A lower cavity (102) is formed in a device wafer (100) containing the control circuit (110), and an upper cavity (310) is formed in a substrate (300). A bonding process is performed to bond the substrate (300) to the device wafer (100) in such a manner that the piezoelectric vibrator (200) is sandwiched between the device wafer (100) and the substrate (300). In this way, integration of the crystal resonator and the control circuit (110) is achieved. A semiconductor die (600) can be further bonded to the same semiconductor substrate. This helps in improving performance of the crystal resonator by allowing on-chip modulation of its parameters. This crystal resonator is more compact in size, less power-consuming and easier to integrate with other semiconductor components with a higher degree of integration, compared with traditional crystal resonators.

9. 发明授权

US11258425B2 Microfabricated notch filter 有权
公开(公告)号：US11258425B2
公开(公告)日：2022-02-22
申请号：US16888878
申请日：2020-06-01
申请人： Innovative Micro Technology
发明人： Christopher S. Gudeman
IPC分类号： H01P7/06 , H01P1/12 , H03H9/02 , H03H9/64 , H01P7/08 , H01P1/18 , H03H9/15
摘要： A microfabricated RF filter uses a resonant cavity weakly coupled to a transmission line, to attenuate noise sources emitting interference into the RF radiation at the resonant frequency. Radiation at the resonant frequency is leaked into the resonant cavity and build up there, until it is dumped to ground by a switch.

10. 发明授权

US11196403B2 Piezoelectric vibrator and piezoelectric vibration device 有权
公开(公告)号：US11196403B2
公开(公告)日：2021-12-07
申请号：US15472576
申请日：2017-03-29
申请人： Murata Manufacturing Co., Ltd.
发明人： Ryota Kawai , Daisuke Nakamura , Toshio Nishimura
IPC分类号： H03H9/02 , H03H9/10 , H03H9/24 , H03H9/17 , H03H9/15
摘要： A piezoelectric vibrator is a piezoelectric vibrator including a vibration portion. The vibration portion has an n-type Si layer which is a degenerated semiconductor and which has a resistivity of not less than 0.5 mΩcm and not greater than 1.2 mΩcm and preferably not greater than 0.9 mΩcm.

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