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1. 发明申请

US20230080083A1 Variable Thickness Ion Source Extraction Plate 有权
公开(公告)号：US20230080083A1
公开(公告)日：2023-03-16
申请号：US17473096
申请日：2021-09-13
申请人： Applied Materials, Inc.
发明人： Alexandre Likhanskii , Alexander S. Perel , Jay T. Scheuer , Bon-Woong Koo , Robert C. Lindberg , Peter F. Kurunczi , Graham Wright
IPC分类号： H01J27/02 , H01J37/08
摘要： An ion source having an extraction plate with a variable thickness is disclosed. The extraction plate has a protrusion on its interior or exterior surface proximate the extraction aperture. The protrusion increases the thickness of the extraction aperture in certain regions. This increases the loss area in those regions, which serves as a sink for ions and electrons. In this way, the plasma density is decreased more significantly in the regions where the extraction aperture has a greater thickness. The shape of the protrusion may be modified to achieve the desired plasma uniformity. Thus, it may be possible to create an extracted ion beam having a more uniform ion density. In some tests, the uniformity of the beam current along the width direction was improved by between 20% and 50%.

2. 发明申请

US20230054638A1 ION GUN AND METHODS FOR SURFACE TREATMENT 有权
公开(公告)号：US20230054638A1
公开(公告)日：2023-02-23
申请号：US17758198
申请日：2021-01-04
申请人： The Regents of the University of California
发明人： Hartmut G. HAEFFNER , Sara Lambert MOURADIAN , Megidish Eli MAGIDASH , Nicole Sarah GREENE
IPC分类号： H01J37/147 , H01J37/21 , H01J37/08
摘要： An ion gun includes a confinement vessel defining a chamber therein; a plasma source configured to provide ions in the chamber; and at least one acceleration and focusing electrode disposed within the chamber and positioned to receive ions from the plasma source, and to accelerate and focus the ions received to be delivered to an underlying surface. The at least one acceleration and focusing electrode is structured to provide an aperture therethrough to provide optical access to a high numerical aperture optical device.

3. 发明申请

US20230005697A1 Reentrant Gas System for Charged Particle Microscope 有权
公开(公告)号：US20230005697A1
公开(公告)日：2023-01-05
申请号：US17364717
申请日：2021-06-30
申请人： FEI Company
发明人： James B MCGINN
IPC分类号： H01J37/02 , H01J37/08
摘要： Disclosed herein are apparatuses and systems for reentrant fluid delivery techniques. An example system includes at least a fluid delivery conduit extending between first and second electrical potentials, wherein the fluid delivery conduit is formed into a tilted helical so that a fluid flowing through the fluid delivery conduit experiences an electric field reversal through each winding of the fluid delivery conduit.

4. 发明申请

US20220392744A1 Specimen Machining Device and Information Provision Method 有权
公开(公告)号：US20220392744A1
公开(公告)日：2022-12-08
申请号：US17832001
申请日：2022-06-03
申请人： JEOL Ltd.
发明人： Tatsuhito Kimura , Munehiro Kozuka , Tsutomu Negishi , Hisashi Kawahara
IPC分类号： H01J37/304 , H01J37/08 , H01J37/20 , H01J37/22
摘要： A specimen machining device for machining a specimen by irradiating the specimen with an ion beam includes an ion source for irradiating the specimen with the ion beam, a specimen stage for holding the specimen, a camera for photographing the specimen, an information provision unit for providing information indicating an expected machining completion time, and a storage unit for storing past machining information. The information provision unit performs processing for calculating the expected machining completion time based on the past machining information, processing for acquiring an image photographed by the camera, processing for calculating a machining speed based on the acquired image, and processing for updating the expected machining completion time based on the machining speed.

5. 发明授权

US11521821B2 Ion source repeller 有权
公开(公告)号：US11521821B2
公开(公告)日：2022-12-06
申请号：US17223360
申请日：2021-04-06
申请人： Axcelis Technologies, Inc.
发明人： Steven T. Drummond , Neil Colvin , Paul Silverstein
IPC分类号： H01J37/08 , H01L21/225 , H01J37/317 , H01J27/14
摘要： An ion source has an arc chamber having one or more arc chamber walls defining and interior region of the arc chamber. A cathode electrode is disposed along an axis. A repeller has a repeller shaft and a ceramic target member separated by a gap. The repeller shaft is not in electrical or mechanical contact with the target member, and the repeller shaft is configured to indirectly heat the target member. The target member, can be a cylinder encircling the repeller shaft, where the gap separates the cylinder from the repeller shaft. A top cap can enclose the cylinder can be separated from a top repeller surface of the repeller shaft by the gap. A target hole can be in the top cap. The target member can be supported by a bottom liner of the arc chamber or a support member mechanically and electrically coupled to the repeller shaft.

6. 发明申请

US20220384139A1 AUTOMATIC ADJUSTMENT METHOD AND AUTOMATIC ADJUSTMENT DEVICE OF BEAM OF SEMICONDUCTOR APPARATUS, AND TRAINING METHOD OF PARAMETER ADJUSTMENT MODEL 有权
公开(公告)号：US20220384139A1
公开(公告)日：2022-12-01
申请号：US17369077
申请日：2021-07-07
申请人： UNITED MICROELECTRONICS CORP.
发明人： Zheng-Yang LI , Chian-Chen KUO , Yi-Cheng LU , Ji-Fu KUNG
IPC分类号： H01J37/08 , H01L21/67 , H01J37/305 , H01J27/18
摘要： An automatic adjustment method and an automatic adjustment device of a beam of a semiconductor apparatus, and a training method of a parameter adjustment model are provided. The automatic adjustment method of the beam of the semiconductor apparatus includes the following steps. The semiconductor apparatus generates the beam. A wave curve of the beam is obtained. The wave curve is segmented into several sections. The slope of each of the sections is obtained. Several environmental factors of the semiconductor apparatus are obtained. According to the slopes and the environmental factors, at least one parameter adjustment command of the semiconductor apparatus is analyzed through the parameter adjustment model.

7. 发明申请

US20220367142A1 PARTICLE BEAM DEVICE HAVING A DEFLECTION UNIT 有权
公开(公告)号：US20220367142A1
公开(公告)日：2022-11-17
申请号：US17695879
申请日：2022-03-16
申请人： Carl Zeiss Microscopy GmbH
发明人： Dirk Preikszas , Michael W. Phaneuf
IPC分类号： H01J37/147 , H01J37/08 , H01J37/09 , H01J37/10 , H01J37/244
摘要： The invention relates to a particle beam device (100) for imaging, analyzing and/or processing an object (114). The particle beam device (100) comprises a first particle beam generator (300) for generating a first particle beam, wherein the first particle beam generator (300) has a first generator beam axis (301), wherein an optical axis (OA) of the particle beam device (100) and the first generator beam axis (301) are identical; a second particle beam generator (400) for generating a second particle beam, wherein the second particle beam generator (400) has a second generator beam axis (401), wherein the optical axis (OA) and the second generator beam axis (401) are arranged at an angle being different from 0° and 180°; a deflection unit (500) for deflecting the second particle beam from the second generator beam axis (401) to the optical axis (OA) and along the optical axis (OA), wherein the deflection unit (500) has a first opening (501) and a second opening (502) being different from the first opening (501), wherein the optical axis (OA) runs through the first opening (501), wherein the second generator beam axis (401) runs through the second opening (502); an objective lens (107) for focusing the first particle beam or the second particle beam onto the object (114), wherein the optical axis (OA) runs through the objective lens (107); and at least one detector (116, 121, 122) for detecting interaction particles and/or interaction radiation.

8. 发明申请

US20220363558A1 ION PRODUCTION SYSTEM WITH EFFICIENT ION COLLECTION 有权
公开(公告)号：US20220363558A1
公开(公告)日：2022-11-17
申请号：US17743742
申请日：2022-05-13
申请人： SHINE Technologies, LLC
发明人： Joseph Sherman , Sarko Cherekdjian
IPC分类号： C01F17/00 , H01J37/05 , H01J37/08
摘要： A system includes an ion source configured to generate ions having a first polarity, one or more extraction electrodes configured to extract the ions from the ion source as an ion beam having an extraction energy, a mass resolving slit or aperture configured to select a desired isotope from the ion beam such that a desired isotopic ion beam passes through the mass resolving slit or aperture, a target positioned relative to the mass resolving slit or aperture so that the desired isotopic ion beam is incident on the target, and a voltage source coupled to the target and configured to hold the target at a first voltage having the first polarity. The first voltage causes a reduction of the extraction energy as the desired isotopic ion beam approaches the target to minimize sputtering and maximize collection of the ions on the target to reconstitute an ionized material.

9. 发明授权

US11482396B2 Ion source head and ion implantation apparatus including the same 有权
公开(公告)号：US11482396B2
公开(公告)日：2022-10-25
申请号：US17210815
申请日：2021-03-24
申请人： SK hynix Inc. , Pusan National University Industry-University Cooperation Foundation
发明人： Jong Jin Hwang , Ho Jun Lee
IPC分类号： H01J37/08 , C23C14/48 , H01J37/317
摘要： An ion source head may include a reaction chamber and a coil. The reaction chamber may be configured to provide an ionization space. The reaction chamber may be divided into a lower region, a central region and an upper region. The coil may be configured to be wound on an outer surface of the reaction chamber. The coil may include a first coil, a second coil and a third coil. The first coil may be spirally wound on an outer surface of the lower region of the reaction chamber. The second coil may be wound on the central region of the reaction chamber. The third coil may be spirally wound on an outer surface of the upper region of the reaction chamber. The second coil may be connected between the first coil and the third coil. The second coil may have a winding direction obliquely to a winding direction of the first and third coils.

10. 发明授权

US11462385B2 Ion beam irradiation apparatus and program therefor 有权
公开(公告)号：US11462385B2
公开(公告)日：2022-10-04
申请号：US16801689
申请日：2020-02-26
申请人： NISSIN ION EQUIPMENT CO., LTD.
发明人： Shinya Takemura
IPC分类号： H01J37/302 , H01J37/08 , G06N20/00 , G06N5/04
摘要： An ion beam irradiation apparatus includes modules for generating an ion beam meeting a processing condition, and a machine learning part that generates a learning algorithm using, as an explanatory variable, a processing condition during new processing and a monitored value that indicates a state of a module during a last processing immediately before the new processing, and a basic operation parameter output part that uses the learning algorithm to output an initial value of a basic operation parameter for controlling an operation of the module.

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