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1. 发明申请

US20230140032A1 APPARATUS FOR THERMALLY PROCESSING A SUBSTRATE 有权
公开(公告)号：US20230140032A1
公开(公告)日：2023-05-04
申请号：US17555484
申请日：2021-12-19
申请人： United Semiconductor (Xiamen) Co., Ltd.
发明人： Xin Zhi He , WEN YI TAN
IPC分类号： H01L21/67 , H05B31/02
摘要： An apparatus for thermally processing a substrate includes a substrate support for holding the substrate and lamps disposed above the substrate support. The lamps are grouped into concentric lamp zones including a center zone comprised of a center lamp and peripheral lamps surrounding the center lamp. A center sleeve is coupled to the center lamp and peripheral sleeves are coupled to the peripheral lamps, respectively, for directing radiated heat to the substrate during thermal processing. The center sleeve has a higher surface roughness than that of the peripheral sleeves.

2. 发明申请

US20230138000A1 AlN CERAMIC SUBSTRATE AND HEATER FOR SEMICONDUCTOR MANUFACTURING APPARATUS 有权
公开(公告)号：US20230138000A1
公开(公告)日：2023-05-04
申请号：US18046614
申请日：2022-10-14
申请人： NGK Insulators, Ltd.
发明人： Keita YAMANA , Kazuhiro NOBORI
IPC分类号： H01L21/67
摘要： An AlN ceramic substrate of the present invention contains yttrium aluminate, and has a volume resistivity of 3×109 Ωcm or more at 550° C.

3. 发明申请

US20230136494A1 VALVE SYSTEM, OUTPUT MONITORING METHOD AND OUTPUT ADJUSTING METHOD FOR DIAPHRAGM VALVE, AND SEMICONDUCTOR MANUFACTURING APPARATUS 有权
公开(公告)号：US20230136494A1
公开(公告)日：2023-05-04
申请号：US17915282
申请日：2021-03-01
申请人： FUJIKIN INCORPORATED
发明人： Toshihide YOSHIDA , Tsutomu SHINOHARA , Tomohiro NAKATA , Ryutaro TANNO , Yuya SUZUKI
IPC分类号： F16K37/00 , F16K7/16 , H01L21/67 , C23C16/455
摘要： [Problem] To provide a valve system capable of monitoring in real time a mass of gas supplied from a valve that is periodically opened and closed, and that is capable of adjusting the output mass of gas supplied from the valve to be close to a target mass.
[Solution] The valve system operates a main actuator 60 to make a diaphragm periodically open and close a flow path (step S2), calculate an output mass of fluid that passes through the a between the diaphragm and a valve seat and output from the diaphragm valve based on displacement data detected by a displacement sensor (step S3), determines an adjustment lift amount based on the calculated output mass, and adjusts a lift amount Lf of the diaphragm 20 by the determined adjustment lift amount (step S4).

4. 发明申请

US20230134436A1 PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS 有权
公开(公告)号：US20230134436A1
公开(公告)日：2023-05-04
申请号：US17975704
申请日：2022-10-28
申请人： Tokyo Electron Limited
发明人： Shinya ISHIKAWA , Kenta ONO , Masanobu HONDA
IPC分类号： H01L21/308 , H01L21/67
摘要： A technique can control the dimensions of an opening. A plasma processing method includes (a) providing a substrate including an etching target layer, and a mask layer located on an upper surface of the etching target layer and having a side surface defining at least one opening on the upper surface of the etching target layer and an extension from the side surface to at least a portion of the upper surface of the etching target layer, (b) forming a deposition layer on at least the side surface of the mask layer, and (c) at least partially etching the deposition layer using plasma generated from a first process gas to reduce a thickness of the deposition layer. The first process gas contains a gas for etching the etching target layer, and (c) is performed until the etching target layer is partially etched in a depth direction to remove the extension.

5. 发明授权

US11640920B2 Sample holder 有权
公开(公告)号：US11640920B2
公开(公告)日：2023-05-02
申请号：US16965419
申请日：2019-01-29
申请人： KYOCERA Corporation
发明人： Miki Hamada
IPC分类号： H01L21/687 , H01L21/67
摘要： A sample holder according to the disclosure includes: an insulating base body in plate form; an electrically conducting member disposed on a lower face of the insulating base body; a lead pin joined to the electrically conducting member so as to extend downwardly from the insulating base body; a tubular member joined to the lower face of the insulating base body so as to surround the lead pin; a first member which is located in an interior of the tubular member and covers a junction between the electrically conducting member and the lead pin, the first member being in a gel form; and a second member which covers the first member and is filled in the interior.

6. 发明授权

US11640918B2 Stage device, power supply mechanism, and processing apparatus 有权
公开(公告)号：US11640918B2
公开(公告)日：2023-05-02
申请号：US17172641
申请日：2021-02-10
申请人： TOKYO ELECTRON LIMITED
发明人： Satoshi Takeda
IPC分类号： H01L21/683 , H01L21/67 , H01L43/08 , H01L43/12 , H01J37/34 , H01J37/32 , C23C14/35 , C23C14/50
摘要： A stage device includes a stage having a copper main body and an electrostatic chuck, a cooling unit disposed below the stage, and a power supply mechanism for supplying power to an attraction electrode of the electrostatic chuck from a DC power supply disposed below the stage. The power supply mechanism includes a pair of terminals disposed at an outer peripheral portion of the stage while being spaced apart from each other, a first power supply line having a pair of metal rods spaced apart from each other while extending toward the stage and being connected to the DC power supply, a second power supply line having a pair of metal rods spaced apart from each other and connected to the terminals, and a connecting unit where the metal rods of the first power supply line and the metal rods of the second power supply line are connected.

7. 发明授权

US11640916B2 Substrate processing apparatus and substrate processing method 有权
公开(公告)号：US11640916B2
公开(公告)日：2023-05-02
申请号：US17443345
申请日：2021-07-26
申请人： SCREEN Holdings Co., Ltd.
发明人： Takahiro Yamaguchi , Jun Sawashima , Akihisa Ensatsu
IPC分类号： H01L21/677 , H01L21/67 , B65G47/90 , H01L21/687
摘要： A substrate processing apparatus includes an indexer block and a processing block adjacent to the indexer block in a lateral direction of the indexer block. A plurality of processing block layers are stacked in an up-down direction in the processing block. The indexer block includes a container holding portion and a first transfer robot that transfers a substrate between the substrate container held by the container holding portion and the processing block. Each of the processing block layers includes a plurality of processing units, a substrate placing portion, a dummy-substrate housing portion, and a second transfer robot that transfers a substrate between the substrate placing portion and the plurality of processing units and that transfers a dummy substrate between the dummy-substrate housing portion and the plurality of processing units.

8. 发明授权

US11640913B2 Photoelectric device 有权
公开(公告)号：US11640913B2
公开(公告)日：2023-05-02
申请号：US17117352
申请日：2020-12-10
申请人： ULTRA DISPLAY TECHNOLOGY CORP.
发明人： Hsien-Te Chen
IPC分类号： H01L21/67
摘要： A photoelectric device includes a target substrate, a circuit pattern layer disposed on the target substrate, a plurality of micro photoelectric elements electrically connected to the circuit pattern layer, and a supplemental repair element electrically connected to the circuit pattern layer. The target substrate is configured with a plurality of connection positions and a repair position disposed with an offset with relative to a corresponding one of the connection positions. The offset is greater than or equal to zero. The micro photoelectric elements are individually disposed on at least a part of the connection positions of the target substrate. The supplemental repair element has an electrode disposed on the repair position of the target substrate, and the electrode is connected to the circuit pattern layer. On the target substrate, the supplemental repair element is arbitrary with respect to the micro photoelectric elements.

9. 发明授权

US11640911B2 Substrate processing method of controlling discharge angle and discharge position of processing liquid supplied to peripheral portion of substrate 有权
公开(公告)号：US11640911B2
公开(公告)日：2023-05-02
申请号：US17646345
申请日：2021-12-29
申请人： Tokyo Electron Limited
发明人： Tatsuhiro Ueki , Jian Zhang
IPC分类号： H01L21/67 , G01N21/95 , B05B12/08 , B05C11/10 , G03F7/16 , G01B11/02 , H01L21/66 , B05B12/12 , B05D1/00 , B24B49/04 , G01B11/06
摘要： A substrate processing apparatus 1 is configured to supply a processing liquid to a peripheral portion of a wafer W being rotated. The substrate processing apparatus 1 includes a rotating/holding unit 21 configured to rotate and hold the wafer W; a processing liquid discharging unit 73 configured to discharge the processing liquid toward the peripheral portion of the wafer W held by the rotating/holding unit 21; a variation acquiring unit configured to acquire information upon a variation amount of a deformation of the peripheral portion of the wafer W; and a discharge controller 7 configured to control a discharge angle and a discharge position of the processing liquid from the processing liquid discharging unit 73 onto the peripheral portion based on the information upon the variation amount of the deformation of the peripheral portion acquired by the variation acquiring unit.

10. 发明授权

US11640909B2 Techniques and apparatus for unidirectional hole elongation using angled ion beams 有权
公开(公告)号：US11640909B2
公开(公告)日：2023-05-02
申请号：US16676857
申请日：2019-11-07
申请人： APPLIED Materials, Inc.
发明人： Kevin Anglin , Simon Ruffell
IPC分类号： H01L21/3065 , H01L21/02 , H01L21/311 , H01J37/32 , H01L21/67
摘要： A method of patterning a substrate. The method may include providing a cavity in a layer, disposed on the substrate, the cavity having a first length along a first direction and a first width along a second direction, perpendicular to the first direction, and wherein the layer has a first height along a third direction, perpendicular to the first direction and the second direction. The method may include depositing a sacrificial layer over the cavity in a first deposition procedure; and directing angled ions to the cavity in a first exposure, wherein the cavity is etched, and wherein after the first exposure, the cavity has a second length along the first direction, greater than the first length, and wherein the cavity has a second width along the second direction, no greater than the first width.

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