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1. 发明授权

US11588066B2 Tandem solar cells having a top or bottom metal chalcogenide cell 有权
公开(公告)号：US11588066B2
公开(公告)日：2023-02-21
申请号：US17288689
申请日：2019-11-05
申请人： The Board of Trustees of the Leland Stanford Junior University
发明人： Koosha Nassiri Nazif , Raisul Islam , Jin-Hong Park , Krishna C. Saraswat
IPC分类号： H01L31/0725 , H01L31/032 , H01L31/055 , H01L31/028 , H01L31/0304 , H01L31/0687 , H01L31/07 , H01L31/072
摘要： Tandem solar cell configurations are provided where at least one of the cells is a metal chalcogenide cell. A four-terminal tandem solar cell configuration has two electrically independent solar cells stacked on each other. A two-terminal solar cell configuration has two electrically coupled solar cells (same current through both cells) stacked on each other. Carrier selective contacts can be used to make contact to the metal chalcogenide cell (s) to alleviate the troublesome Fermi level pinning issue. Carrier-selective contacts can also remove the need to provide doping of the metal chalcogenide. Doping of the metal chalcogenide can be provided by charge transfer. These two ideas can be practiced independently or together in any combination.

2. 发明授权

US10809588B2 Schottky UV solar cell 有权
公开(公告)号：US10809588B2
公开(公告)日：2020-10-20
申请号：US15659150
申请日：2017-07-25
申请人： Hongbin Yu , Sandwip Dey , Xiao Di Sun Zhou , Ebraheem Azhar
发明人： Hongbin Yu , Sandwip Dey , Xiao Di Sun Zhou , Ebraheem Azhar
IPC分类号： H01L31/054 , G02F1/163 , H02S20/26 , G02F1/133 , G02F1/153 , H01L31/0224 , H01L31/07 , H01L31/073 , H01L31/18 , G02F1/1524
摘要： Optically transmissive UV solar cells may be coupled to glass substrates, for example windows, in order to generate electricity while still providing suitable optical behavior for the window. The UV solar cells may be utilized to power electrochromic components coupled to the window to adjust or vary the transmissivity of the window. The UV solar cells may utilize a Schottky ZnO/ZnS heterojunction.

3. 发明授权

US10686091B2 Semiconductor device 有权
公开(公告)号：US10686091B2
公开(公告)日：2020-06-16
申请号：US16077261
申请日：2017-02-10
申请人： LG INNOTEK CO., LTD.
发明人： Jung Hun Oh , Hyung Jo Park
IPC分类号： H01L31/07 , H01L31/10 , H01L33/06 , H01L33/10 , H01L33/38 , H01L33/46 , H01L31/075 , H01L31/105 , H01L27/15 , H01L33/44 , H01L31/101
摘要： A semiconductor device of an embodiment includes first and second semiconductor layers having different conductivity types; a third semiconductor layer interposed between the first and second semiconductor layers; and a fourth semiconductor layer interposed between the second and third semiconductor layers, having a lower doping concentration than that of the first semiconductor layer and the same conductivity type as the first semiconductor layer, wherein the difference in doping concentration between the first semiconductor layer and the fourth semiconductor layer may be greater than 4×E18 atoms/cm3.

4. 发明授权

US10373950B2 Super CMOS devices on a microelectronics system 有权
公开(公告)号：US10373950B2
公开(公告)日：2019-08-06
申请号：US15799921
申请日：2017-10-31
申请人： SCHOTTKY LSI, INC.
发明人： Augustine Wei-Chun Chang
IPC分类号： H01L29/872 , H01L27/06 , H01L27/02 , H01L27/07 , H01L27/105 , H01L27/108 , H01L27/112 , H01L27/11526 , H01L27/11546 , H01L27/118 , H01L31/032 , H01L31/0376 , H01L31/072 , H01L31/074 , H03K19/177 , H01L25/065 , H01L21/8238 , H01L29/66 , H01L31/07 , H01L49/02
摘要： A low cost IC solution is disclosed to provide Super CMOS microelectronics macros. Hereinafter, the Super CMOS or Schottky CMOS all refer to SCMOS. The SCMOS device solutions with a niche circuit element, the complementary low threshold Schottky barrier diode pairs (SBD) made by selected metal barrier contacts (Co/Ti) to P— and N—Si beds of the CMOS transistors. A DTL like new circuit topology and designed wide contents of broad product libraries, which used the integrated SBD and transistors (BJT, CMOS, and Flash versions) as basic components. The macros include diodes that are selectively attached to the diffusion bed of the transistors, configuring them to form generic logic gates, memory cores, and analog functional blocks from simple to the complicated, from discrete components to all grades of VLSI chips. Solar photon voltaic electricity conversion and bio-lab-on-a-chip are two newly extended fields of the SCMOS IC applications.

5. 发明申请

US20190173031A1 Photodetectors and photovoltaics based on semiconductor nanocrystals 审中-公开
公开(公告)号：US20190173031A1
公开(公告)日：2019-06-06
申请号：US16153858
申请日：2018-10-08
申请人： InVisage Technologies Inc.
发明人： Edward Hartley Sargent , Ghada Koleilat , Larissa Levina
IPC分类号： H01L51/42 , H01L51/44 , H01L31/07 , B82Y30/00 , H01L31/032 , B82Y20/00 , H01L31/0384 , H01L31/0352
摘要： A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.

6. 发明授权

US10297709B2 Photovoltaic devices with an interfacial band-gap modifying structure and methods for forming the same 有权
公开(公告)号：US10297709B2
公开(公告)日：2019-05-21
申请号：US15156940
申请日：2016-05-17
申请人： International Business Machines Corporation , Egypt Nanotechnology Center
发明人： Keith E. Fogel , Jeehwan Kim , Devendra K. Sadana , George S. Tulevski , Ahmed Abou-Kandil , Hisham S. Mohamed , Mohamed Saad , Osama Tobail
IPC分类号： H01L31/0224 , H01L31/18 , H01L31/075 , H01L31/0232 , H01L31/07 , H01L31/056 , H01L31/028 , H01L31/20 , H01L31/0256
摘要： A Schottky-barrier-reducing layer is provided between a p-doped semiconductor layer and a transparent conductive material layer of a photovoltaic device. The Schottky-barrier-reducing layer can be a conductive material layer having a work function that is greater than the work function of the transparent conductive material layer. The conductive material layer can be a carbon-material layer such as a carbon nanotube layer or a graphene layer. Alternately, the conductive material layer can be another transparent conductive material layer having a greater work function than the transparent conductive material layer. The reduction of the Schottky barrier reduces the contact resistance across the transparent material layer and the p-doped semiconductor layer, thereby reducing the series resistance and increasing the efficiency of the photovoltaic device.

7. 发明申请

US20180248142A1 SOLAR CELLS, STRUCTURES INCLUDING ORGANOMETALLIC HALIDE PEROVSKITE MONOCRYSTALLINE FILMS, AND METHODS OF PREPARATION THEREOF 审中-公开
公开(公告)号：US20180248142A1
公开(公告)日：2018-08-30
申请号：US15754733
申请日：2016-08-15
申请人： King Abdullah University of Science and Technology
发明人： Osman M. BAKR , Wei PENG , Lingfei WANG
IPC分类号： H01L51/42 , C23C14/06 , H01L31/0392 , H01L31/07 , H01L51/00
CPC分类号： H01L51/4206 , C23C14/06 , H01L31/0392 , H01L31/07 , H01L51/0002 , H01L51/0094 , H01L2251/308 , Y02E10/549
摘要： Embodiments of the present disclosure provide for solar cells including an organometallic halide perovskite monocrystalline film (see FIG. 1.1B), other devices including the organometallic halide perovskite monocrystalline film, methods of making organometallic halide perovskite monocrystalline film, and the like.

8. 发明授权

US10032949B2 Photovoltaic device based on Ag2ZnSn(S,Se)4 absorber 有权
公开(公告)号：US10032949B2
公开(公告)日：2018-07-24
申请号：US14936131
申请日：2015-11-09
申请人： International Business Machines Corporation
发明人： Talia S. Gershon , Supratik Guha , Oki Gunawan , Richard A. Haight , Yun Seog Lee
IPC分类号： H01L31/18 , H01L31/072 , H01L31/032 , H01L21/02 , H01L31/0392 , H01L31/07
摘要： Photovoltaic devices based on an Ag2ZnSn(S,Se)4 (AZTSSe) absorber and techniques for formation thereof are provided. In one aspect, a method for forming a photovoltaic device includes the steps of: coating a substrate with a conductive layer; contacting the substrate with an Ag source, a Zn source, a Sn source, and at least one of a S source and a Se source under conditions sufficient to form an absorber layer on the conductive layer having Ag, Zn, Sn, and at least one of S and Se; and annealing the absorber layer. Methods of doping the AZTSSe are provided. A photovoltaic device is also provided.

9. 发明授权

US09917220B2 Buffer layer for high performing and low light degraded solar cells 有权
公开(公告)号：US09917220B2
公开(公告)日：2018-03-13
申请号：US15077169
申请日：2016-03-22
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Augustin J. Hong , Marinus J. Hopstaken , Jeehwan Kim , John A. Ott , Devendra K. Sadana
IPC分类号： H01L31/0376 , H01L31/0392 , H01L31/075 , H01L31/07 , H01L31/18 , H01L31/20
CPC分类号： H01L31/03921 , H01L31/03762 , H01L31/03767 , H01L31/07 , H01L31/075 , H01L31/1884 , H01L31/202 , H01L31/204 , Y02E10/548 , Y02P70/521
摘要： Methods for forming a photovoltaic device include forming a buffer layer between a transparent electrode and a p-type layer. The buffer layer includes a doped germanium-free silicon base material. The buffer layer has a work function that falls within barrier energies of the transparent electrode and the p-type layer. An intrinsic layer and an n-type layer are formed on the p-type layer. Devices are also provided.

10. 发明授权

US09806072B2 Super CMOS devices on a microelectronics system 有权
公开(公告)号：US09806072B2
公开(公告)日：2017-10-31
申请号：US15358049
申请日：2016-11-21
申请人： SCHOTTKY LSI, INC.
发明人： Augustine Wei-Chun Chang
IPC分类号： H01L27/118 , H01L29/872 , H01L27/06 , H01L27/11526 , H01L27/112 , H01L21/8238 , H01L31/0376 , H01L31/07 , H01L29/66
CPC分类号： H01L27/0629 , H01L21/8238 , H01L25/065 , H01L27/0207 , H01L27/0727 , H01L27/105 , H01L27/10897 , H01L27/112 , H01L27/11253 , H01L27/11286 , H01L27/11293 , H01L27/11526 , H01L27/11546 , H01L27/11807 , H01L28/20 , H01L29/66143 , H01L29/872 , H01L31/032 , H01L31/0376 , H01L31/03762 , H01L31/07 , H01L31/072 , H01L31/074 , H01L2924/0002 , H03K19/17728 , Y02E10/50 , H01L2924/00
摘要： This application is directed to a low cost IC solution that provides Super CMOS microelectronics macros. Hereinafter, SCMOS refers to Super CMOS and Schottky CMOS. SCMOS device solutions includes a niche circuit element, such as complementary low threshold Schottky barrier diode pairs (SBD) made by selected metal barrier contacts (Co, Ti, Ni or other metal atoms or compounds) to P- and N- Si beds of the CMOS transistors. A DTL like new circuit topology and designed wide contents of broad product libraries, which used the integrated SBD and transistors (BJT, CMOS, and Flash versions) as basic components. The macros are composed of diodes that are selectively attached to the diffusion bed of the transistors, configuring them to form (i) generic logic gates, (ii) functional blocks of microprocessors and microcontrollers such as but not limited to data paths, multipliers, muliplier-accumaltors, (ii) memory cells and control circuits of various types (SRAM's with single or multiple read/write port(s), binary and ternary CAM's), (iii) multiplexers, crossbar switches, switch matrices in network processors, graphics processors and other processors to implement a variety of communication protocols and algorithms of data processing engines for (iv) Analytics, (v) block-chain and encryption-based security engines (vi) Artificial Neural Networks with specific circuits to emulate or to implement a self-learning data processor similar to or derived from the neurons and synapses of human or animal brains, (vii) analog circuits and functional blocks from simple to the complicated including but not limited to power conversion, control and management either based on charge pumps or inductors, sensor signal amplifiers and conditioners, interface drivers, wireline data transceivers, oscillators and clock synthesizers with phase and/or delay locked loops, temperature monitors and controllers; all the above are built from discrete components to all grades of VLSI chips. Solar photovoltaic electricity conversion, bio-lab-on-a-chip, hyperspectral imaging (capture/sensing and processing), wireless communication with various transceiver and/or transponder circuits for ranges of frequency that extend beyond a few 100 MHz, up to multi-THz, ambient energy harvesting either mechanical vibrations or antenna-based electromagnetic are newly extended or nacent fields of the SCMOS IC applications.

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