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1. 发明授权

US11621389B2 Low frequency vibrating actuator device 有权
公开(公告)号：US11621389B2
公开(公告)日：2023-04-04
申请号：US17023730
申请日：2020-09-17
申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
发明人： Kang-Ho Park , Seongdeok Ahn , Jong Tae Lim , Chan Woo Park , Ji-Young Oh
IPC分类号： H01L41/047 , H01L41/053 , H01L41/083
摘要： Provided is a low frequency vibrating actuator device. The low frequency vibrating actuator device includes a substrate including a pair of connection electrodes, an actuator provided on the pair of connection electrodes to generate vibration, a support provided on the actuator, a vibration membrane provided on the support to vibrate according to the actuator, and a vibrating mass provided on the vibration membrane to vibrate according to the vibration membrane. The actuator includes a plurality of laminated insulating layers and internal electrodes that are alternately laminated between the insulating layers adjacent to each other, and a top surface of the support, which contacts the vibration membrane, has an area that is equal to or less than that of a bottom surface of the support, which contacts the actuator.

2. 发明申请

US20230095101A1 PIEZOELECTRIC LAMINATE AND PIEZOELECTRIC ELEMENT 有权
公开(公告)号：US20230095101A1
公开(公告)日：2023-03-30
申请号：US17898688
申请日：2022-08-30
申请人： FUJIFILM Corporation
发明人： Hiroyuki KOBAYASHI , Seigo NAKAMURA
IPC分类号： H01L41/18 , H01L41/047 , H01L41/083
摘要： A piezoelectric laminate and a piezoelectric element have, on a substrate in the following order, a lower electrode layer, and a piezoelectric film containing a perovskite-type oxide. The lower electrode layer includes a first layer arranged in a state of being in contact with the substrate and includes a second layer arranged in a state of being in contact with the piezoelectric film, the first layer contains Ti or TiW as a main component, the second layer is a uniaxial alignment film which contains Ir as a main component and in which the Ir is aligned in a (111) plane, and a half width at half maximum of an X-ray diffraction peak from the (111) plane is 0.3° or more.

3. 发明授权

US11611330B2 Micro-electro-mechanical resonators 有权
公开(公告)号：US11611330B2
公开(公告)日：2023-03-21
申请号：US16737748
申请日：2020-01-08
申请人： University of Florida Research Foundation, Inc.
发明人： Roozbeh Tabrizian , Mayur Ghatge
IPC分类号： H01L41/083 , H01L41/18 , H03H9/17 , H03H9/54 , H03H9/56
摘要： A tunable non-reciprocal frequency limiter with an asymmetric micro-electro-mechanical resonator has two independent transducer ports. One port has a film stack including a 10 nm hafnium zirconium oxide (HZO) and another port has a film stack including a 120 nm aluminum nitride (AlN) film. These film stacks are deposited on top of 70 nm single crystal silicon substrate applying CMOS compatible fabrication techniques. The asymmetric transducer architecture with dissimilar electromechanical coupling coefficients force the resonator into mechanical nonlinearity on actuation with transducer having larger coupling. A proof-of-concept electrically-coupled channel filter is demonstrated with two such asymmetric resonators at ˜253 MHz with individual Qres of ˜870 and a non-reciprocal transmission ratio (NTR) ˜16 dB and BW3 dB of 0.25%.

4. 发明授权

US11607707B2 Method for vibrating a vibration device 有权
公开(公告)号：US11607707B2
公开(公告)日：2023-03-21
申请号：US16232431
申请日：2018-12-26
申请人： TDK CORPORATION
发明人： Kaoru Kijima , Kazuki Saito
IPC分类号： B06B1/06 , H01L41/047 , B06B1/02 , H01L41/09 , H01L41/083 , H01L41/04 , G10K9/125
摘要： A vibration device includes a piezoelectric element, a vibration member to which the piezoelectric element is bonded, and a wiring member connected with the piezoelectric element. A method for vibrating the vibration device includes inputting a signal including a fundamental frequency component to the piezoelectric element through the wiring member, and vibrating the vibration device in a vibration mode that includes the fundamental frequency component and does not approximately include a high order frequency component that is n times (n represents an integer of 2 or more) the fundamental frequency component. The fundamental frequency component is lower than the resonance frequency component of the vibration device.

5. 发明授权

US11590536B2 Wafer level ultrasonic chip module and manufacturing method thereof 有权
公开(公告)号：US11590536B2
公开(公告)日：2023-02-28
申请号：US16274477
申请日：2019-02-13
申请人： SONICMEMS (ZHENGZHOU) TECHNOLOGY CO., LTD. , PEKING UNIVERSITY SHENZHEN GRADUATE SCHOOL
发明人： Yu-Feng Jin , Sheng-Lin Ma , Qian-Cheng Zhao , Yi-Hsiang Chiu , Huan Liu , Hung-Ping Lee , Dan Gong
IPC分类号： B06B3/00 , B06B1/06 , H01L41/083 , H01L41/08 , H01L41/277 , H01L41/332 , H01L41/337 , H01L41/338 , G06K9/00 , G06V40/13
摘要： A wafer level ultrasonic chip module includes a substrate, a composite layer, a conducting material, and a base material. The substrate has a through slot that passes through an upper surface of the substrate and a lower surface of the substrate. The composite layer includes an ultrasonic body and a protective layer. A lower surface of the ultrasonic body is exposed from the through slot. The protective layer covers the ultrasonic body and a partial upper surface of the substrate. The protective layer has an opening, from which a partial upper surface of the ultrasonic body is exposed. The conducting material is in contact with the upper surface of the ultrasonic body. The base material covers the through slot, such that a space is formed among the through slot, the lower surface of the ultrasonic body and an upper surface of the base material.

6. 发明授权

US11581476B2 Semiconductor structure and method for manufacturing thereof 有权
公开(公告)号：US11581476B2
公开(公告)日：2023-02-14
申请号：US16818881
申请日：2020-03-13
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
发明人： Chun-Wen Cheng , Chun Yin Tsai , Chia-Hua Chu
IPC分类号： H01L41/08 , H01L41/047 , H01L41/293 , H01L41/083
摘要： A semiconductor structure is provided. The semiconductor structure includes a substrate, a first piezoelectric layer, and a first dummy layer. The first piezoelectric layer is over the substrate, and the first piezoelectric layer has a first top surface. The first dummy layer is over the first piezoelectric layer, and the first dummy layer has a second top surface. And an average roughness of the first top surface is greater than an average roughness of the second top surface. A method for manufacturing the semiconductor structure is also provided.

7. 发明授权

US11569431B1 Piezoelectric deformable photonic devices 有权
公开(公告)号：US11569431B1
公开(公告)日：2023-01-31
申请号：US16989535
申请日：2020-08-10
申请人： National Technology & Engineering Solutions of Sandia, LLC
发明人： Matt Eichenfield , Andrew Jay Leenheer , Paul Stanfield
IPC分类号： H01L41/08 , H01L41/083 , G02F1/125 , G02F1/01 , H01L41/18 , G02B6/35
摘要： A CMOS-compatible actuator platform for implementing phase, amplitude, and frequency modulation in silicon nitride photonic integrated circuits via piezo-optomechanical coupling using tightly mechanically coupled aluminum nitride actuators is disclosed. The platform, which may be fabricated in a CMOS foundry, enables scalable active photonic integrated circuits for visible wavelengths, and the piezoelectric actuation functions without performance degradation down to cryogenic operating temperatures. A number of devices are possible, including ring modulator devices, phase shifter devices, Mach-Zehnder interferometer devices, directional coupler devices (including tunable directional coupler devices), and acousto-optic modulator and frequency shifter devices, each of which can employ the same AlN actuator platform. As all of these devices can be built on the same AlN actuator platform, numerous optical functions can be implemented on a single die.

8. 发明申请

US20230028329A1 METHODS AND SYSTEMS FOR WAFER SCALE TRANSDUCER ARRAY FABRICATION 有权
公开(公告)号：US20230028329A1
公开(公告)日：2023-01-26
申请号：US17938567
申请日：2022-10-06
申请人： GE Precision Healthcare LLC
发明人： Edouard Dacruz , Flavien Daloz , Jason Barrett
IPC分类号： H01L41/083 , A61B8/00 , H01L27/20 , H01L41/338
摘要： Various methods and systems are provided for a multi-frequency transducer array. In one example, the transducer array may be fabricated via a wafer scale approach, where a first comb structure, with a first type of element, is formed by dicing a first acoustic stack and a second comb structure, with a second type of element, is formed by dicing a second acoustic stack. Combining the first and second comb structures may form a multi-frequency transducer array.

9. 发明申请

US20230024822A1 SELF-POWERED WEIGH-IN-MOTION SYSTEM 有权
公开(公告)号：US20230024822A1
公开(公告)日：2023-01-26
申请号：US17859429
申请日：2022-07-07
申请人： Sara Ahmed , Mohamadreza Khalili , Athanassios Thomas Pagagiannakis , Gopal Vishwakarma , Samer Dessouky
发明人： Sara Ahmed , Mohamadreza Khalili , Athanassios Thomas Pagagiannakis , Gopal Vishwakarma , Samer Dessouky
IPC分类号： G01G19/03 , G01G19/52 , G01G3/13 , H01L41/083 , H01L41/113 , H02N2/18
摘要： Aspects of self-powered weigh-in-motion systems and methods that utilize piezoelectric components for sensing load as well as powering data acquisition and analysis components. In one example, the weigh-in-motion system includes a number of piezoelectric stacks, each stack including a number of piezoelectric elements. Each stack includes one or more top or upper piezoelectric element that provides vehicle sensing data. Each stack also includes a set of piezoelectric elements used for energy harvesting. The sensing piezoelectric elements are connected to a data input of a microcontroller for vehicle classification, while the energy harvesting piezoelectric elements are connected to a power input of the microcontroller.

10. 发明申请

US20230019706A1 LAMINATED PIEZOELECTRIC ELEMENT AND ELECTROACOUSTIC TRANSDUCER 有权
公开(公告)号：US20230019706A1
公开(公告)日：2023-01-19
申请号：US17946825
申请日：2022-09-16
申请人： FUJIFILM Corporation
发明人： Teruo ASHIKAWA , Kazuo HIRAGUCHI , Yusuke KAGAWA , Tetsu MIYOSHI
IPC分类号： H04R17/00 , H01L41/047 , H01L41/053 , H01L41/083
摘要： Provided are a laminated piezoelectric element and an electroacoustic transducer capable of obtaining high piezoelectric characteristics and easily ensuring an electric contact to an electrode layer. A plurality of layers of piezoelectric films, each of which is formed by laminating a first protective layer, a first electrode layer, a piezoelectric layer, a second electrode layer, and a second protective layer in this order, are laminated. Each of the piezoelectric layers is polarized in a thickness direction. In each of the piezoelectric films, the first electrode is disposed on an upstream side in a polarization direction of the piezoelectric layer, and the second electrode is disposed on a downstream side. Each of the plurality of piezoelectric films has a cemented portion which is cemented to an adjacent piezoelectric film and a protruding portion which is not cemented to the adjacent piezoelectric film and in which at least the first electrode layer and the first protective layer or the second electrode layer and the second protective layer protrude from the cemented portion toward the outside in a plane direction. At the protruding portion of each of the piezoelectric films, at least one of a first contact, to which the first electrode layers of the piezoelectric films are electrically connected to each other, or a second contact, to which the second electrode layers of the piezoelectric films are electrically connected to each other, is formed.

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