
基本信息:
- 专利标题: 一种半导体封装在塑封前的表面纳米膜处理方法
- 专利标题(英):Surface nanofilm processing method prior to plastic packaging in semiconductor packaging
- 申请号:CN201110309643.0 申请日:2011-10-13
- 公开(公告)号:CN102412166A 公开(公告)日:2012-04-11
- 发明人: 不公告发明人
- 申请人: 无锡世一电力机械设备有限公司
- 申请人地址: 江苏省无锡市锡山区锡山经济开发区蓉辉路6号
- 专利权人: 无锡世一电力机械设备有限公司
- 当前专利权人: 无锡世一电力机械设备有限公司
- 当前专利权人地址: 江苏省无锡市锡山区锡山经济开发区蓉辉路6号
- 代理机构: 苏州市新苏专利事务所有限公司
- 代理人: 杨晓东
- 主分类号: H01L21/56
- IPC分类号: H01L21/56
The invention discloses a surface nanofilm processing method prior to plastic packaging in semiconductor packaging. The surface nanofilm processing method is characterized in that the surface nanofilm processing method includes the following steps: step a: a small amount of adhesion promoter solution is uniformly applied on the surface of a material to be processed and attached on the surface to be reinforced; step b: the solvent in the adhesion promoter solution is volatilized and air-dried under the normal temperature or dried by way of baking, the thickness of an adhesion promoter active ingredient coating after volatilization is controlled at nanometer-grade thickness, and the adhesion promoter active ingredient coating and the surface to be reinforced on the material to be processed are chemically bonded; step c: the subsequent plastic packaging process is carried out, and the functional group of the other side of the nanometer-grade thickness adhesion promoter active ingredient coating already chemically bonded with the surface of the material to be processed is chemically bonded with epoxy resin used in the plastic packaging process. The surface nanofilm processing method can enhance the bonding strength of a plurality of key interfaces in chip packaging to a certain degree, prevent layering and cracking in the technological process and decrease the moisture level.
公开/授权文献:
- CN102412166B 一种半导体封装在塑封前的表面纳米膜处理方法 公开/授权日:2013-11-13
IPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
--------H01L21/02 | .半导体器件或其部件的制造或处理 |
----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
------------H01L21/50 | ...应用H01L21/06至H01L21/326中的任一小组都不包含的方法或设备组装半导体器件的 |
--------------H01L21/56 | ....封装,例如密封层、涂层 |