基本信息:
- 专利标题： 一种用于AlN晶体生长的籽晶
- 专利标题（英）：Seed crystal for aluminium nitride (ALN) crystal growth
- 申请号：CN201310006222.X 申请日：2013-01-08
- 公开(公告)号：CN102995124A 公开(公告)日：2013-03-27
- 发明人： 韩杰才 , 宋波 , 金雷 , 张化宇
- 申请人： 哈尔滨工业大学
- 申请人地址： 黑龙江省哈尔滨市南岗区西大直街92号
- 专利权人： 哈尔滨工业大学
- 当前专利权人： 哈尔滨工业大学
- 当前专利权人地址： 黑龙江省哈尔滨市南岗区西大直街92号
- 代理机构： 哈尔滨市松花江专利商标事务所
- 代理人： 韩末洙
- 主分类号： C30B29/38
- IPC分类号： C30B29/38 ; C30B23/00
A seed crystal for aluminium nitride (ALN) crystal growth relates to a material for ALN crystal growth. A problem that spontaneous nucleation adopted at current is difficult to obtain a big-size ALN crystal and an impurity content of the ALN crystal grown by an alloplasm seed crystal method is high is solved. The seed crystal for ALN crystal growth is an ALN ceramic wafer after treatment of annealing process. The seed crystal for ALN crystal growth further can be an ALN ceramic wafer after treatment of annealing process and polishing in sequence, or an ALN thin film is pasted on the surface of a polished seed crystal to obtain the seed crystal for ALN crystal growth. The ALN crystal grown by using the seed crystal for ALN crystal growth is big in size and fewer in impurity content. The seed crystal is mainly applied to growth of the ALN crystal in a semiconductor device.
公开/授权文献:
- CN102995124B 一种用于AlN晶体生长的籽晶 公开/授权日：2015-07-22