
基本信息:
- 专利标题: 中频感应加热方式制备高纯氧化亚硅的方法及设备
- 专利标题(英):Method and device for preparing high-purity silicon monoxide by medium-frequency induction heating way
- 申请号:CN201611195184.7 申请日:2016-12-21
- 公开(公告)号:CN106608629A 公开(公告)日:2017-05-03
- 发明人: 马飞 , 沈龙 , 丁晓阳 , 葛传长
- 申请人: 上海杉杉科技有限公司
- 申请人地址: 上海市徐汇区浦东新区曹路镇金海路3158号2幢
- 专利权人: 上海杉杉科技有限公司
- 当前专利权人: 上海杉杉科技有限公司
- 当前专利权人地址: 上海市徐汇区浦东新区曹路镇金海路3158号2幢
- 代理机构: 上海宣宜专利代理事务所
- 代理人: 刘君
- 主分类号: C01B33/113
- IPC分类号: C01B33/113 ; B01J19/24 ; B01J19/00 ; B01J3/03
The invention relates to the technical field of preparation of high-purity silicon monoxide, in particular, relates to a method and device for preparing high-purity silicon monoxide by a medium-frequency induction heating way, and is characterized in that the preparation method comprises the following steps: 1, preparing raw materials: mixing high-purity silicon with the content of more than 99.5 wt% and silicon dioxide with the content of more than 99.5 wt% according to the weight ratio of 1:1; 2, carrying out medium-frequency induction heating; and 3, cooling to obtain the finished product; when the medium-frequency induction heating temperature is 1200-1600 DEG C, the molar ratio of the raw materials of high-purity silicon and silicon dioxide is adjusted, and the value of x in the product SiOx is a fixed value; but when the medium-frequency induction heating temperature is more than or equal to 1600 DEG C, the value of the molar ratio of the raw materials of high-purity silicon and silicon dioxide is controlled to be 0.88-1.2, and the value of x in the product SiOx is adjustable in a range of 0.89-1.10. Compared with the prior art, the method and the device have the advantages of high heating efficiency and stable equipment; products with different silicon-oxygen ratios are obtained by adjustment of the heating temperature and the ratio of the raw materials.
公开/授权文献:
- CN106608629B 中频感应加热方式制备高纯氧化亚硅的方法及设备 公开/授权日:2024-07-30
IPC结构图谱:
C | 化学;冶金 |
--C01 | 无机化学 |
----C01B | 非金属元素;其化合物 |
------C01B33/00 | 硅;其化合物 |
--------C01B33/113 | .氧化硅;其水合物 |