The invention relates to a semiconductor device voltage-withstanding structure. The semiconductor device voltage-withstanding structure comprises a high-voltage interconnection area used for arranging a high-voltage interconnection line, and a metal layer, a dielectric layer, a field oxide layer and an area, apart from an active region, of a drift area are successively arranged below the high-voltage interconnection area. The semiconductor device voltage-withstanding structure further comprises a plurality of conductor field plates and a plurality of semi-insulating resistor filed plates, wherein the conductor field plates are disposed above the semi-insulating resistor filed plates, and the conductor field plates are disposed in the dielectric layer, all the semi-insulating resistor filed plates are adjacent to the field oxide layer, the conductor field plates and the semi-insulating resistor filed plates form a plurality of capacitors, and any one capacitor at least can transmit energy to another capacitor. The semiconductor device voltage-withstanding structure generally reduces high voltages borne by the surface of the drift area, improves breakdown voltages of a semiconductor device and enables the semiconductor device to work under higher voltages.