The invention discloses a novel die bonding film. The film is characterized by comprising nano metal powder, antioxidant, soldering flux, stabilizer and active agent, wherein the content of the nano metal powder is 40-95.0 wt.%, the content of the antioxidant is 1-50 wt.%, the content of the soldering flux is 1-50.0 wt.%, and the total amount of the soldering flux, the stabilizer and the active agent is smaller than or equal to 10.0 wt.%. The film is advantaged in that the nanometer metal powder, the antioxidant, the soldering flux and other materials are mixed and pressed to form a film, highheat dissipation can be achieved, thickness is uniform, flatness of a die bonding layer is well controlled, die bonding and interconnection under the low-temperature condition are achieved on the premise that electrical performance of a semiconductor packaging interconnection module is not affected, and use under the conditions of small spacing, high power, high temperature, high pressure and thelike can be met. The solid crystal film can be used in the fields of power electronic application, IGBT packaging, photoelectron packaging, MEMS packaging, microelectronics, high-power LED packagingand the like.