A high-frequency switching transistor (100; 200) comprises a substrate (102) having a substrate dopant concentration and a barrier region (104) bordering on the substrate, which has a first conductivity type, wherein a barrier region dopant concentration is higher than the substrate dopant concentration. Further, the high-frequency switching transistor (100; 200) comprises a source region (108) embedded in the barrier region, which comprises a second conductivity type different to the first conductivity type, and has a source region dopant concentration, which is higher than the barrier region dopant concentration. Additionally, the high-frequency switching transistor (100; 200) comprises a drain region (110) embedded in the barrier region and disposed offset from the source region (108),which comprises the second conductivity type and has a drain region dopant concentration, which is higher than the barrier region dopant concentration. Further, the high-frequency switching transistor (100; 200) has a channel region (112), extending between the source region (108) and the drain region (110), wherein the channel region (112) comprises a subregion of the barrier region (104). Further, the high-frequency switching transistor (100; 200) has an insulation region (114), which covers the channel region (112) and which is disposed between the channel region (112) and the gate electrode (114). Such a high-frequency switching transistor (100; 200) allows switching of high-frequency signals with higher high-frequency signal amplitudes as are switchable by conventional high-frequencyswitching transistors.