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91. 发明授权

US08438123B2 Method and apparatus for configuring a communication channel 失效
标题翻译：用于配置通信信道的方法和装置
公开(公告)号：US08438123B2
公开(公告)日：2013-05-07
申请号：US12064222
申请日：2006-08-17
申请人： Christopher Harris
发明人： Christopher Harris
IPC分类号： G06F15/18
CPC分类号： H04L5/1438
摘要： A method of configuring a communication channel prior to the transmission of an input signal along the communication channel, the communication channel comprising a plurality of sub-channels, the method comprising determining the strength of the input signal and in accordance with the determined signal strength, selecting a set of the plurality of sub-channels and transmitting said input signal along the set of sub-channels in parallel, wherein each of the sub-channels has a predetermined noise characteristic such that the set of selected sub-channels exhibits a combined noise characteristic in which the standard deviation of the noise is proportional to the signal strength.
摘要翻译：一种在沿着通信信道发送输入信号之前配置通信信道的方法，所述通信信道包括多个子信道，该方法包括确定输入信号的强度并根据所确定的信号强度，选择一组所述多个子信道并且沿着所述子信道集合并行地发送所述输入信号，其中每个子信道具有预定的噪声特性，使得所选择的子信道的集合呈现组合噪声噪声的标准偏差与信号强度成比例的特性。

92. 发明授权

US08421148B2 Grid-UMOSFET with electric field shielding of gate oxide 有权
公开(公告)号：US08421148B2
公开(公告)日：2013-04-16
申请号：US11855595
申请日：2007-09-14
申请人： Christopher Harris , Andrei Konstantinov , Jan-Olov Svederg
发明人： Christopher Harris , Andrei Konstantinov , Jan-Olov Svederg
IPC分类号： H01L29/66 , H01L29/94
CPC分类号： H01L29/7827 , H01L29/0623 , H01L29/1095 , H01L29/1608 , H01L29/2003 , H01L29/41741 , H01L29/41766 , H01L29/4238 , H01L29/45 , H01L29/66068 , H01L29/66727 , H01L29/66734 , H01L29/7813
摘要： A trench metal oxide semiconductor field effect transistor or UMOSFET, includes a buried region that extends beneath the trench and beyond a corner of the trench. The buried region is tied to a source potential of the UMOSFET, and splits the potential realized across the structure. This effectively shields the electric field from the corners of the trench to reduce gate oxide stress, and resultantly improves device performance and reliability.

93. 发明申请

US20120273566A1 Ground Location of Work Truck 有权
标题翻译：工作车的地面位置
公开(公告)号：US20120273566A1
公开(公告)日：2012-11-01
申请号：US13544173
申请日：2012-07-09
申请人： Christopher Harris
发明人： Christopher Harris
IPC分类号： G06F17/00
CPC分类号： G01S1/70 , G01C21/206
摘要： A vehicle tracking system for tracking a position of at least one vehicle of a plurality of vehicles within a region, includes a plurality of identifiers, an imaging device, and a controller. At least one of the identifiers is provided on each of the vehicles. The imaging device is configured to generate image data including (i) region data representative of the region and (ii) identifier data representative of the identifiers located in the region. The controller is configured (i) to process the identifier data to generate position data representative of a position of each of the identifiers within the region, (ii) to process the identifier data to generate identification data that are unique to each identifier, and (iii) to output at least one of the image data, the position data, and the identification data to a monitor.
摘要翻译：用于跟踪区域内的多个车辆的至少一个车辆的位置的车辆跟踪系统包括多个标识符，成像装置和控制器。在每个车辆上提供至少一个标识符。成像装置被配置为生成图像数据，包括（i）表示该区域的区域数据，以及（ii）表示位于该区域中的标识符的标识符数据。所述控制器被配置为（i）处理所述标识符数据以生成表示所述区域内的每个所述标识符的位置的位置数据，（ii）处理所述标识符数据以生成对于每个标识符唯一的标识数据，以及（ iii）将至少一个图像数据，位置数据和识别数据输出到监视器。

94. 发明授权

US07994017B2 Method of manufacturing silicon carbide self-aligned epitaxial MOSFET for high powered device applications 有权
标题翻译：制造用于高功率器件应用的碳化硅自对准外延MOSFET的方法
公开(公告)号：US07994017B2
公开(公告)日：2011-08-09
申请号：US12603603
申请日：2009-10-22
申请人： Christopher Harris , Kent Bertilsson , Andrei Konstantinov
发明人： Christopher Harris , Kent Bertilsson , Andrei Konstantinov
IPC分类号： H01L21/336
CPC分类号： H01L29/7813 , H01L29/0878 , H01L29/1095 , H01L29/1608 , H01L29/41766 , H01L29/42368 , H01L29/66068 , Y10S438/903 , Y10S438/969
摘要： A self-aligned, silicon carbide power metal oxide semiconductor field effect transistor includes a trench formed in a first layer, with a base region and then a source region epitaxially regrown within the trench. A window is formed through the source region and into the base region within a middle area of the trench. A source contact is formed within the window in contact with a base and source regions. The gate oxide layer is formed on the source and base regions at a peripheral area of the trench and on a surface of the first layer. A gate electrode is formed on the gate oxide layer above the base region at the peripheral area of the trench, and a drain electrode is formed over a second surface of the first layer.
摘要翻译：自对准的碳化硅功率金属氧化物半导体场效应晶体管包括形成在第一层中的沟槽，其具有在沟槽内外延再生长的基极区域和源极区域。通过源区域形成窗口，并且在沟槽的中间区域内形成窗口。源极触点形成在与基极和源极区域接触的窗口内。栅极氧化层形成在沟槽的周边区域和第一层的表面上的源极和基极区域上。在沟槽的周边区域的基极区域上方的栅极氧化层上形成栅电极，在第一层的第二面上形成漏电极。

95. 外观设计

USD623740S1 Wound dressing applicator 有权
标题翻译：伤口敷料器
公开(公告)号：USD623740S1
公开(公告)日：2010-09-14
申请号：US29320067
申请日：2008-06-19
申请人： Christopher Harris , Ian Dera , Dimitrios Scoutas , Matthew Hannant , Graeme Maisey , Philip Dunn , Barry Sandbank , Sushma Jassal
设计人： Christopher Harris , Ian Dera , Dimitrios Scoutas , Matthew Hannant , Graeme Maisey , Philip Dunn , Barry Sandbank , Sushma Jassal

96. 发明申请

US20100072026A1 LATERAL LOAD BUILDING CONVEYOR APPARATUS 失效
标题翻译：侧向装载输送机装置
公开(公告)号：US20100072026A1
公开(公告)日：2010-03-25
申请号：US12564805
申请日：2009-09-22
申请人： Achie B. Russell , Christopher Harris , Sean Finley , Donald West
发明人： Achie B. Russell , Christopher Harris , Sean Finley , Donald West
IPC分类号： B65G47/46
CPC分类号： B65G47/54 , B65G2201/0288
摘要： A load moving apparatus is operable to move a load, such as a stack of sheet product, in a first and second direction on a staging area. The load moving apparatus includes a first conveyor, a second conveyor, and a translating device. The first conveyor defines the staging area and is configured to move a load in a first direction. The second conveyor is positioned within the staging area and is configured to move the load in a second direction different from the first direction. The translating device is configured to move vertically one of the first conveyor and the second conveyor relative to the other of the first conveyor and the second conveyor. The load moving apparatus can be used to build or break down loads entering the staging area.
摘要翻译：负载移动装置可操作以在分段区域上沿着第一和第二方向移动诸如一叠片材产品的负载。负载移动装置包括第一输送机，第二输送机和平移装置。第一输送机定义了分段区域，并且被配置成沿第一方向移动负载。第二输送机定位在分段区域内并且构造成沿与第一方向不同的第二方向移动负载。平移装置构造成相对于第一输送机和第二输送机中的另一个垂直地移动第一输送机和第二输送机之一。负载移动装置可用于构建或分解进入分段区域的负载。

97. 发明授权

US07629616B2 Silicon carbide self-aligned epitaxial MOSFET for high powered device applications 有权
标题翻译：用于大功率器件应用的碳化硅自对准外延MOSFET
公开(公告)号：US07629616B2
公开(公告)日：2009-12-08
申请号：US11711703
申请日：2007-02-28
申请人： Christopher Harris , Kent Bertilsson , Andrei Konstantinov
发明人： Christopher Harris , Kent Bertilsson , Andrei Konstantinov
IPC分类号： H01L29/76 , H01L21/336
CPC分类号： H01L29/7813 , H01L29/0878 , H01L29/1095 , H01L29/1608 , H01L29/41766 , H01L29/42368 , H01L29/66068 , Y10S438/903 , Y10S438/969
摘要： A self-aligned, silicon carbide power metal oxide semiconductor field effect transistor includes a trench formed in a first layer, with a base region and then a source region epitaxially regrown within the trench. A window is formed through the source region and into the base region within a middle area of the trench. A source contact is formed within the window in contact with a base and source regions. The gate oxide layer is formed on the source and base regions at a peripheral area of the trench and on a surface of the first layer. A gate electrode is formed on the gate oxide layer above the base region at the peripheral area of the trench, and a drain electrode is formed over a second surface of the first layer.
摘要翻译：自对准的碳化硅功率金属氧化物半导体场效应晶体管包括形成在第一层中的沟槽，其具有在沟槽内外延再生长的基极区域和源极区域。通过源区域形成窗口，并且在沟槽的中间区域内形成窗口。源极触点形成在与基极和源极区域接触的窗口内。栅极氧化层形成在沟槽的周边区域和第一层的表面上的源极和基极区域上。在沟槽的周边区域的基极区域上方的栅极氧化层上形成栅电极，在第一层的第二面上形成漏电极。

98. 发明申请

US20090065506A1 Holding Device for a Blister Pack and a Method for Opening a Blister 审中-公开
标题翻译：用于泡罩包装的保持装置和打开泡罩的方法
公开(公告)号：US20090065506A1
公开(公告)日：2009-03-12
申请号：US12065956
申请日：2006-09-07
申请人： John Currie , Christopher Harris , Derek Shaw
发明人： John Currie , Christopher Harris , Derek Shaw
IPC分类号： B65B43/38 , B65D83/04 , B65D45/16
CPC分类号： B65D83/0463 , B65D50/046 , B65D2215/02
摘要： A device for holding a blister pack (42) with an array of cavities closed by a foil, which cavities contain an article, said device comprising a housing (8) for receiving said blister pack (42), which housing (8) comprises a base (9) provided with base openings (10) and is arranged to permit movement of said blister pack (42) between a first position and a second position, in which first position the base openings (10) are displaced from the cavities and the base (9) blocking the cavities, and in which second position the base openings (10) are aligned with the cavities, the base openings (10) permitting passage of said article therethrough. The device comprises a locking arrangement (12) comprising a operating means (13) operable by a user, between a locking position and a non-locking position, in which locking position the blister pack (42) is locked in said first position, and in which non-locking position the blister pack (42) is movable to said second position. Said operating means (13) are operable from the locking position to the non-locking position by a first movement of said operating means in relation to the housing, followed by at least one second movement of said operating means in relation to the housing. Further, a method for opening a cavity in a blister pack placed in said device.
摘要翻译：一种用于保持泡罩包装（42）的装置，其具有由箔封闭的空腔阵列，所述空腔包含物品，所述装置包括用于容纳所述泡罩包装（42）的壳体（8），所述壳体（8）包括底座（9）设置有基部开口（10）并且被布置成允许所述泡罩包装（42）在第一位置和第二位置之间移动，在第一位置和第二位置之间，基座开口（10）从空腔中移位，基部（9）阻挡空腔，并且其中基部开口（10）与空腔对准的第二位置，基部开口（10）允许所述制品通过其中。所述装置包括锁定装置（12），所述锁定装置（12）包括操作装置（13），所述操作装置可由使用者操作，在锁定位置和非锁定位置之间，所述泡罩包装（42）锁定在所述第一位置的锁定位置，以及其中泡罩包装（42）可移动到所述第二位置的非锁定位置。所述操作装置（13）可通过所述操作装置相对于所述壳体的第一移动而从所述锁定位置到所述非锁定位置操作，随后所述操作装置相对于所述壳体的至少一次第二移动。此外，一种用于打开放置在所述装置中的泡罩包装中的空腔的方法。

99. 发明申请

US20080203398A1 Silicon carbide self-aligned epitaxial MOSFET and method of manufacturing thereof 有权
标题翻译：碳化硅自对准外延MOSFET及其制造方法
公开(公告)号：US20080203398A1
公开(公告)日：2008-08-28
申请号：US11711703
申请日：2007-02-28
申请人： Christopher Harris , Kent Bertilsson , Andrei Konstantinov
发明人： Christopher Harris , Kent Bertilsson , Andrei Konstantinov
IPC分类号： H01L29/76 , H01L21/336
CPC分类号： H01L29/7813 , H01L29/0878 , H01L29/1095 , H01L29/1608 , H01L29/41766 , H01L29/42368 , H01L29/66068 , Y10S438/903 , Y10S438/969
摘要： A self-aligned, silicon carbide power metal oxide semiconductor field effect transistor includes a trench formed in a first layer, with a base region and then a source region epitaxially regrown within the trench. A window is formed through the source region and into the base region within a middle area of the trench. A source contact is formed within the window in contact with a base and source regions. The gate oxide layer is formed on the source and base regions at a peripheral area of the trench and on a surface of the first layer. A gate electrode is formed on the gate oxide layer above the base region at the peripheral area of the trench, and a drain electrode is formed over a second surface of the first layer.
摘要翻译：自对准的碳化硅功率金属氧化物半导体场效应晶体管包括形成在第一层中的沟槽，其具有在沟槽内外延再生长的基极区域和源极区域。通过源区域形成窗口，并且在沟槽的中间区域内形成窗口。源极触点形成在与基极和源极区域接触的窗口内。栅极氧化层形成在沟槽的周边区域和第一层的表面上的源极和基极区域上。在沟槽的周边区域的基极区域上方的栅极氧化层上形成栅电极，在第一层的第二面上形成漏电极。

100. 发明申请

US20080017380A1 Non-ferromagnetic overburden casing 有权
标题翻译：非铁磁上覆层套管
公开(公告)号：US20080017380A1
公开(公告)日：2008-01-24
申请号：US11788871
申请日：2007-04-20
申请人： Harold Vinegar , Christopher Harris , Stanley Mason
发明人： Harold Vinegar , Christopher Harris , Stanley Mason
IPC分类号： E21B43/24 , E21B36/00
CPC分类号： E21B43/2401 , B32B1/08 , B32B9/002 , B32B9/045 , B32B15/013 , B32B15/015 , B32B2307/202 , B32B2307/208 , C21D6/002 , C21D6/007 , C21D2211/001 , C21D2211/004 , C21D2211/005 , C22C38/02 , C22C38/04 , C22C38/10 , C22C38/12 , C22C38/14 , C22C38/24 , C22C38/28 , C22C38/30 , E21B36/04 , G05F1/10 , Y10S166/902 , Y10T307/406
摘要： Systems, methods, and heaters for treating a subsurface formation are described herein. At least one system for electrically insulating an overburden portion of a heater wellbore is described. The system may include a heater wellbore located in a subsurface formation and an electrically insulating casing located in the overburden portion of the heater wellbore. The casing may include at least one non-ferromagnetic material such that ferromagnetic effects are inhibited in the casing.
摘要翻译：本文描述了用于处理地下地层的系统，方法和加热器。描述了用于电绝缘加热器井筒的覆盖层部分的至少一个系统。该系统可以包括位于地下地层中的加热器井筒和位于加热器井筒的上覆层部分中的电绝缘壳体。壳体可以包括至少一种非铁磁材料，使得壳体中的铁磁效应被抑制。

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