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21. 发明申请

US20120269989A1 LOW TEMPERATURE SILICON OXIDE CONVERSION 有权
标题翻译：低温氧化硅转换
公开(公告)号：US20120269989A1
公开(公告)日：2012-10-25
申请号：US13237131
申请日：2011-09-20
申请人： Jingmei Liang , Nitin K. Ingle , Sukwon Hong , Anjana M. Patel
发明人： Jingmei Liang , Nitin K. Ingle , Sukwon Hong , Anjana M. Patel
IPC分类号： C23C16/40 , C23C16/56 , C23C16/50
CPC分类号： C23C16/345 , C23C16/56
摘要： A method of forming a silicon oxide layer is described. The method first deposits a silicon-nitrogen-and-hydrogen-containing (polysilazane) film by radical-component chemical vapor deposition (CVD). The polysilazane film is converted to silicon oxide by exposing the polysilazane film to humidity at low substrate temperature. The polysilazane film may also be dipped in a liquid having both oxygen and hydrogen, such as water, hydrogen peroxide and or ammonium hydroxide. These conversion techniques may be used separately or in a sequential combination. Conversion techniques described herein hasten conversion, produce manufacturing-worthy films and remove the requirement of a high temperature oxidation treatment. An ozone treatment may precede the conversion technique(s).
摘要翻译：描述形成氧化硅层的方法。该方法首先通过自由基组分化学气相沉积（CVD）沉积含硅氮和氢的（聚硅氮烷）膜。通过将聚硅氮烷膜暴露于低底物温度下的湿度，将聚硅氮烷膜转化为氧化硅。聚硅氮烷膜也可以浸渍在具有氧和氢的液体中，例如水，过氧化氢和/或氢氧化铵。这些转化技术可以单独使用或以顺序组合使用。本文所述的转化技术加速转化，产生制造有价值的膜并去除高温氧化处理的要求。臭氧处理可以在转化技术之前。

22. 发明申请

US20120238108A1 TWO-STAGE OZONE CURE FOR DIELECTRIC FILMS 审中-公开
标题翻译：用于电介质膜的两级氧化固化
公开(公告)号：US20120238108A1
公开(公告)日：2012-09-20
申请号：US13227161
申请日：2011-09-07
申请人： Xiaolin Chen , Jingmei Liang , Nitin K. Ingle , Shankar Venkataraman
发明人： Xiaolin Chen , Jingmei Liang , Nitin K. Ingle , Shankar Venkataraman
IPC分类号： H01L21/316
CPC分类号： H01L21/02164 , C23C16/345 , C23C16/56 , H01L21/02219 , H01L21/02326 , H01L21/02337 , H01L21/0234 , H01L21/31111
摘要： A method of forming a silicon oxide layer is described. The method increases the oxygen content of a dielectric layer by curing the layer in a two-step ozone cure. The first step involves exposing the dielectric layer to ozone while the second step involves exposing the dielectric layer to ozone excited by a local plasma. This sequence can reduce or eliminate the need for a subsequent anneal following the cure step. The two-step ozone cures may be applied to silicon-and-nitrogen-containing film to convert the films to silicon oxide.
摘要翻译：描述形成氧化硅层的方法。该方法通过在两步臭氧固化中固化该层来增加电介质层的氧含量。第一步涉及将介电层暴露于臭氧，而第二步涉及将电介质层暴露于由局部等离子体激发的臭氧。该顺序可以减少或消除在固化步骤之后的后续退火的需要。两步臭氧治疗可以应用于含硅和氮的膜以将膜转化为氧化硅。

23. 发明授权

US08012887B2 Precursor addition to silicon oxide CVD for improved low temperature gapfill 失效
标题翻译：添加氧化硅CVD用于改善低温缝隙填料的前体
公开(公告)号：US08012887B2
公开(公告)日：2011-09-06
申请号：US12489234
申请日：2009-06-22
申请人： Shankar Venkataraman , Hiroshi Hamana , Manuel A. Hernandez , Nitin K. Ingle , Paul Edward Gee
发明人： Shankar Venkataraman , Hiroshi Hamana , Manuel A. Hernandez , Nitin K. Ingle , Paul Edward Gee
IPC分类号： H01L21/31 , C23C16/00
CPC分类号： H01L21/31612 , C23C16/401 , H01L21/02164 , H01L21/02211 , H01L21/02216 , H01L21/02222 , H01L21/02271 , H01L21/76224
摘要： Methods of depositing silicon oxide layers on substrates involve flowing a silicon-containing precursor, an oxidizing gas, water and an additive precursor into a processing chamber such that a uniform silicon oxide growth rate is achieved across the substrate surface. The surface of silicon oxide layers grown according to embodiments may have a reduced roughness when grown with the additive precursor. In other aspects of the disclosure, silicon oxide layers are deposited on a patterned substrate with trenches on the surface by flowing a silicon-containing precursor, an oxidizing gas, water and an additive precursor into a processing chamber such that the trenches are filled with a reduced quantity and/or size of voids within the silicon oxide filler material.
摘要翻译：在衬底上沉积氧化硅层的方法包括使含硅前体，氧化气体，水和添加剂前体流入处理室，使得在衬底表面上实现均匀的氧化硅生长速率。根据实施例生长的氧化硅层的表面可以在与添加剂前体一起生长时具有减小的粗糙度。在本公开的其他方面中，通过使含硅前体，氧化气体，水和添加剂前体流入处理室，将硅氧化物层沉积在具有表面上的沟槽的图案化衬底上，使得沟槽填充有氧化硅填充材料内的空隙的数量和/或尺寸减小。

24. 发明授权

US07939422B2 Methods of thin film process 有权
标题翻译：薄膜工艺方法
公开(公告)号：US07939422B2
公开(公告)日：2011-05-10
申请号：US11947674
申请日：2007-11-29
申请人： Nitin K. Ingle , Jing Tang , Yi Zheng , Zheng Yuan , Zhenbin Ge , Xinliang Lu , Chien-Teh Kao , Vikash Banthia , William H. McClintock , Mei Chang
发明人： Nitin K. Ingle , Jing Tang , Yi Zheng , Zheng Yuan , Zhenbin Ge , Xinliang Lu , Chien-Teh Kao , Vikash Banthia , William H. McClintock , Mei Chang
IPC分类号： H01L21/76
CPC分类号： H01L21/67253 , H01L21/02164 , H01L21/0217 , H01L21/3105 , H01L21/31116 , H01L21/76232
摘要： A method for forming a semiconductor structure includes forming a plurality of features across a surface of a substrate, with at least one space being between two adjacent features. A first dielectric layer is formed on the features and within the at least one space. A portion of the first dielectric layer interacts with a reactant derived from a first precursor and a second precursor to form a first solid product. The first solid product is decomposed to substantially remove the portion of the first dielectric layer. A second dielectric layer is formed to substantially fill the at least one space.
摘要翻译：一种用于形成半导体结构的方法包括跨越衬底的表面形成多个特征，其中至少一个空间位于两个相邻特征之间。第一电介质层形成在特征上并且在至少一个空间内。第一介电层的一部分与衍生自第一前体和第二前体的反应物相互作用以形成第一固体产物。第一固体产物被分解以基本上除去第一介电层的部分。形成第二电介质层以基本上填充至少一个空间。

25. 发明申请

US20090031955A1 VACUUM CHUCKING HEATER OF AXISYMMETRICAL AND UNIFORM THERMAL PROFILE 审中-公开
标题翻译：轴对称和均匀热轮廓的真空开关加热器
公开(公告)号：US20090031955A1
公开(公告)日：2009-02-05
申请号：US11830589
申请日：2007-07-30
申请人： Siqing Lu , Balaji Chandrasekaran , Paul Edward Gee , Nitin K. Ingle , Dmitry Lubomirsky , Zheng Yuan , Ellie Y. Yieh
发明人： Siqing Lu , Balaji Chandrasekaran , Paul Edward Gee , Nitin K. Ingle , Dmitry Lubomirsky , Zheng Yuan , Ellie Y. Yieh
IPC分类号： C23C16/00 , B23B31/30
CPC分类号： C23C16/4586 , C23C16/4584 , Y10T279/11
摘要： Embodiments of a vacuum chuck having an axisymmetrical and/or more uniform thermal profile are provided herein. In some embodiments, a vacuum chuck includes a body having a support surface for supporting a substrate thereupon; a plurality of axisymmetrically arranged grooves formed in the support surface, at least some of the grooves intersecting; and a plurality of chucking holes formed through the body and within the grooves, the chucking holes for fluidly coupling the grooves to a vacuum source during operation, wherein the chucking holes are disposed in non-intersecting portions of the grooves.
摘要翻译：具有轴对称和/或更均匀的热分布的真空吸盘的实施例在此提供。在一些实施例中，真空卡盘包括具有用于支撑基板的支撑表面的主体; 形成在支撑表面中的多个轴对称布置的槽，至少一些槽相交; 以及在所述槽内形成的多个夹持孔，所述夹持孔用于在操作期间将所述槽流体耦合到真空源，其中所述夹紧孔设置在所述槽的非交叉部分中。

26. 发明授权

US09324576B2 Selective etch for silicon films 有权
标题翻译：硅膜的选择性蚀刻
公开(公告)号：US09324576B2
公开(公告)日：2016-04-26
申请号：US13088930
申请日：2011-04-18
申请人： Jingchun Zhang , Anchuan Wang , Nitin K. Ingle
发明人： Jingchun Zhang , Anchuan Wang , Nitin K. Ingle
IPC分类号： H01L21/302 , H01L21/461 , B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , C23F3/00 , H01L21/3213 , H01L21/3065 , H01L21/311
CPC分类号： H01L21/32137 , H01L21/3065 , H01L21/311 , H01L21/31116 , H01L21/32136
摘要： A method of etching patterned heterogeneous silicon-containing structures is described and includes a remote plasma etch with inverted selectivity compared to existing remote plasma etches. The methods may be used to conformally trim polysilicon while removing little or no silicon oxide. More generally, silicon-containing films containing less oxygen are removed more rapidly than silicon-containing films which contain more oxygen. Other exemplary applications include trimming silicon carbon nitride films while essentially retaining silicon oxycarbide. Applications such as these are enabled by the methods presented herein and enable new process flows. These process flows are expected to become desirable for a variety of finer linewidth structures. Methods contained herein may also be used to etch silicon-containing films faster than nitrogen-and-silicon containing films having a greater concentration of nitrogen.
摘要翻译：描述了蚀刻图案化异质含硅结构的方法，并且包括与现有远程等离子体蚀刻相比具有反向选择性的远程等离子体蚀刻。这些方法可用于在少量或不含氧化硅的同时去除多晶硅。更一般地，含有较少氧的含硅膜比含有更多氧的含硅膜更快地除去。其他示例性应用包括修整硅碳氮化物膜，同时基本上保留碳氧化硅。诸如这些的应用由本文提供的方法实现，并且实现了新的工艺流程。预期这些工艺流程对于各种更细的线宽结构是理想的。本文包含的方法也可以用于比含有较高氮浓度的含氮和硅的膜更快地蚀刻含硅膜。

27. 发明授权

US08679983B2 Selective suppression of dry-etch rate of materials containing both silicon and nitrogen 失效
标题翻译：选择性抑制含有硅和氮的材料的干蚀刻速率
公开(公告)号：US08679983B2
公开(公告)日：2014-03-25
申请号：US13449441
申请日：2012-04-18
申请人： Yunyu Wang , Anchuan Wang , Jingchun Zhang , Nitin K. Ingle , Young S. Lee
发明人： Yunyu Wang , Anchuan Wang , Jingchun Zhang , Nitin K. Ingle , Young S. Lee
IPC分类号： H01L21/302 , B44C1/22
CPC分类号： H01L21/3065 , H01J37/32357 , H01J37/32449 , H01L21/32137
摘要： A method of suppressing the etch rate for exposed silicon-and-nitrogen-containing material on patterned heterogeneous structures is described and includes a two stage remote plasma etch. The etch selectivity of silicon relative to silicon nitride and other silicon-and-nitrogen-containing material is increased using the method. The first stage of the remote plasma etch reacts plasma effluents with the patterned heterogeneous structures to form protective solid by-product on the silicon-and-nitrogen-containing material. The plasma effluents of the first stage are formed from a remote plasma of a combination of precursors, including nitrogen trifluoride and hydrogen (H2). The second stage of the remote plasma etch also reacts plasma effluents with the patterned heterogeneous structures to selectively remove material which lacks the protective solid by-product. The plasma effluents of the second stage are formed from a remote plasma of a fluorine-containing precursor.
摘要翻译：描述了抑制图案化异质结构上暴露的含硅和氮的材料的蚀刻速率的方法，并且包括两级远程等离子体蚀刻。使用该方法，硅相对于氮化硅和其它含硅和氮的材料的蚀刻选择性增加。远程等离子体蚀刻的第一阶段使等离子体流出物与图案化的异质结构反应，以在含硅和氮的材料上形成保护性固体副产物。第一级的等离子体流出物由包括三氟化氮和氢气（H 2）在内的前体组合的远程等离子体形成。远程等离子体蚀刻的第二阶段还使等离子体流出物与图案化的异质结构反应，以选择性地去除缺乏保护性固体副产物的材料。第二级的等离子体流出物由含氟前体的远程等离子体形成。

28. 发明授权

US08679982B2 Selective suppression of dry-etch rate of materials containing both silicon and oxygen 有权
标题翻译：选择性抑制含有硅和氧的材料的干蚀刻速率
公开(公告)号：US08679982B2
公开(公告)日：2014-03-25
申请号：US13449543
申请日：2012-04-18
申请人： Yunyu Wang , Anchuan Wang , Jingchun Zhang , Nitin K. Ingle , Young S. Lee
发明人： Yunyu Wang , Anchuan Wang , Jingchun Zhang , Nitin K. Ingle , Young S. Lee
IPC分类号： H01L21/311
CPC分类号： H01L21/31116 , H01J37/32357 , H01L21/3065 , H01L21/32137
摘要： A method of suppressing the etch rate for exposed silicon-and-oxygen-containing material on patterned heterogeneous structures is described and includes a two stage remote plasma etch. Examples of materials whose selectivity is increased using this technique include silicon nitride and silicon. The first stage of the remote plasma etch reacts plasma effluents with the patterned heterogeneous structures to form protective solid by-product on the silicon-and-oxygen-containing material. The plasma effluents of the first stage are formed from a remote plasma of a combination of precursors, including a nitrogen-containing precursor and a hydrogen-containing precursor. The second stage of the remote plasma etch also reacts plasma effluents with the patterned heterogeneous structures to selectively remove material which lacks the protective solid by-product. The plasma effluents of the second stage are formed from a remote plasma of a fluorine-containing precursor.
摘要翻译：描述了抑制图案化异质结构上暴露的含硅和氧的材料的蚀刻速率的方法，并且包括两级远程等离子体蚀刻。使用该技术提高其选择性的材料的实例包括氮化硅和硅。远程等离子体蚀刻的第一阶段使等离子体流出物与图案化的异质结构反应，以在含硅和氧的材料上形成保护性固体副产物。第一级的等离子体流出物由包括含氮前体和含氢前体的前体组合的远程等离子体形成。远程等离子体蚀刻的第二阶段还使等离子体流出物与图案化的异质结构反应，以选择性地去除缺乏保护性固体副产物的材料。第二级的等离子体流出物由含氟前体的远程等离子体形成。

29. 发明授权

US08629067B2 Dielectric film growth with radicals produced using flexible nitrogen/hydrogen ratio 有权
标题翻译：使用柔性氮/氢比产生的自由基的介电膜生长
公开(公告)号：US08629067B2
公开(公告)日：2014-01-14
申请号：US12969877
申请日：2010-12-16
申请人： Jingmei Liang , Xiaolin Chen , Matthew L. Miller , Nitin K. Ingle , Shankar Venkataraman
发明人： Jingmei Liang , Xiaolin Chen , Matthew L. Miller , Nitin K. Ingle , Shankar Venkataraman
IPC分类号： H01L21/31
CPC分类号： H01L21/02164 , C23C16/345 , C23C16/452 , C23C16/56 , H01J37/32357 , H01L21/0217 , H01L21/02274 , H01L21/02326 , H01L21/02337
摘要： Methods of forming dielectric layers are described. The method may include the steps of mixing a silicon-containing precursor with a radical-nitrogen precursor, and depositing a dielectric layer on a substrate. The radical-nitrogen precursor is formed in a remote plasma by flowing hydrogen (H2) and nitrogen (N2) into the plasma in order to allow adjustment of the nitrogen/hydrogen ratio. The dielectric layer is initially a silicon-and-nitrogen-containing layer which may be converted to a silicon-and-oxygen-containing layer by curing and/or annealing the film in an oxygen-containing environment.
摘要翻译：描述形成电介质层的方法。该方法可以包括以下步骤：将含硅前体与自由基 - 氮前体混合，并在基底上沉积电介质层。通过使氢（H 2）和氮（N 2）流入等离子体中，在远离等离子体中形成自由基 - 氮前体，以便调整氮/氢比。电介质层最初是含硅和氮的层，其可以通过在含氧环境中固化和/或退火该膜而转化为含硅和氧的层。

30. 发明授权

US08318584B2 Oxide-rich liner layer for flowable CVD gapfill 有权
标题翻译：富含氧化物的衬里层，用于可流动的CVD填隙
公开(公告)号：US08318584B2
公开(公告)日：2012-11-27
申请号：US13153016
申请日：2011-06-03
申请人： DongQing Li , Jingmei Liang , Nitin K. Ingle
发明人： DongQing Li , Jingmei Liang , Nitin K. Ingle
IPC分类号： H01L21/76
CPC分类号： H01L21/02164 , H01L21/02274 , H01L21/02304 , H01L21/02326 , H01L21/02337
摘要： The formation of a gap-filling silicon oxide layer with reduced volume fraction of voids is described. The deposition involves the formation of an oxygen-rich less-flowable liner layer before an oxygen-poor more-flowable gapfill layer. However, the liner layer is deposited within the same chamber as the gapfill layer. The liner layer and the gapfill layer may both be formed by combining a radical component with an unexcited silicon-containing precursor (i.e. not directly excited by application of plasma power). The liner layer has more oxygen content than the gapfill layer and deposits more conformally. The deposition rate of the gapfill layer may be increased by the presence of the liner layer. The gapfill layer may contain silicon, oxygen and nitrogen and be converted at elevated temperature to contain more oxygen and less nitrogen. The presence of the gapfill liner provides a source of oxygen underneath the gapfill layer to augment the gas phase oxygen introduced during the conversion.
摘要翻译：描述了具有减小的空隙体积分数的间隙填充氧化硅层的形成。沉积涉及在贫氧的可流动的间隙填充层之前形成富氧的较少可流动的衬层。然而，衬垫层沉积在与间隙填充层相同的腔室内。衬垫层和间隙填充层可以通过将自由基组分与未掺杂的含硅前体（即不通过施加等离子体功率直接激发）组合来形成。衬垫层比间隙填充层具有更多的氧含量并且更保守地沉积。间隙填充层的沉积速率可以通过衬垫层的存在而增加。间隙填充层可以含有硅，氧和氮并且在升高的温度下转化以含有更多的氧和更少的氮。间隙填料衬垫的存在在间隙填充层下面提供氧气源，以增加在转化期间引入的气相氧。

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