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1. 发明授权

US08101525B2 Method for fabricating a semiconductor device having a lanthanum-family-based oxide layer 失效
标题翻译：具有镧系氧化物层的半导体装置的制造方法
公开(公告)号：US08101525B2
公开(公告)日：2012-01-24
申请号：US12371085
申请日：2009-02-13
申请人： Meihua Shen , Noel Sun , Nicolas Gani , Han-Hsiang Chen , Eric Pei , Weimin Zeng , Thorsten B. Lill , Uday Mitra , Ellie Y. Yieh
发明人： Meihua Shen , Noel Sun , Nicolas Gani , Han-Hsiang Chen , Eric Pei , Weimin Zeng , Thorsten B. Lill , Uday Mitra , Ellie Y. Yieh
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/31122 , H01L21/28123 , H01L21/28167 , H01L21/31105 , H01L21/31111 , H01L21/32139 , H01L29/4966 , H01L29/513 , H01L29/517
摘要： Methods for fabricating a semiconductor device having a lanthanum-family-based oxide layer are described. A gate stack having a lanthanum-family-based oxide layer is provided above a substrate. At least a portion of the lanthanum-family-based oxide layer is modified to form a lanthanum-family-based halide portion. The lanthanum-family-based halide portion is removed with a water vapor treatment.
摘要翻译：描述了制造具有镧族氧化物层的半导体器件的方法。具有镧族氧化物层的栅极叠层设置在基板的上方。镧族氧化物层的至少一部分被改性以形成镧族卤化物部分。用水蒸气处理除去镧族卤化物部分。

2. 发明申请

US20100095979A1 REMOTE PLASMA CLEAN PROCESS WITH CYCLED HIGH AND LOW PRESSURE CLEAN STEPS 失效
标题翻译：具有循环高低压清洁步骤的远程等离子清洁工艺
公开(公告)号：US20100095979A1
公开(公告)日：2010-04-22
申请号：US12508381
申请日：2009-07-23
申请人： Zhong Qiang Hua , Sanjay Kamath , Young S. Lee , Ellie Y. Yieh , Hien-Minh Huu Le , Anjana M. Patel , Sudhir R. Gondhalekar
发明人： Zhong Qiang Hua , Sanjay Kamath , Young S. Lee , Ellie Y. Yieh , Hien-Minh Huu Le , Anjana M. Patel , Sudhir R. Gondhalekar
IPC分类号： B08B7/00
CPC分类号： B08B7/0035 , C23C16/4405
摘要： A remote plasma process for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber after processing a substrate disposed in the substrate processing chamber. In one embodiment, the substrate is transferred out of the substrate processing chamber and a flow of a fluorine-containing etchant gas is introduced into a remote plasma source where reactive species are formed. A continuous flow of the reactive species from the remote plasmas source to the substrate processing chamber is generated while a cycle of high and low pressure clean steps is repeated. During the high pressure clean step, reactive species are flown into the substrate processing chamber while pressure within the substrate processing chamber is maintained between 4-15 Torr. During the low pressure clean step, reactive species are flown into the substrate processing chamber while reducing the pressure of the substrate processing chamber by at least 50 percent of a high pressure reached in the high pressure clean step.
摘要翻译：一种远程等离子体处理，用于在处理设置在基板处理室中的基板之后从基板处理室的一个或多个内表面去除不需要的沉积物。在一个实施例中，将衬底转移出衬底处理室，并且将含氟蚀刻剂气体的流引入形成反应性物质的远程等离子体源中。产生反应物质从远程等离子体源到基底处理室的连续流动，同时重复高低压清洁步骤的循环。在高压清洁步骤期间，反应性物质流入基板处理室，同时基板处理室内的压力保持在4-15Torr之间。在低压清洁步骤期间，将反应性物质流入基板处理室，同时将基板处理室的压力降低至高压清洁步骤达到的至少50％的高压。

3. 发明申请

US20090208880A1 PROCESS SEQUENCE FOR FORMATION OF PATTERNED HARD MASK FILM (RFP) WITHOUT NEED FOR PHOTORESIST OR DRY ETCH 有权
标题翻译：用于形成图形硬片（RFP）的过程序列，不需要用于光刻胶或干蚀刻
公开(公告)号：US20090208880A1
公开(公告)日：2009-08-20
申请号：US12034000
申请日：2008-02-20
申请人： SRINIVAS D. NEMANI , Shankar Venkataraman , Ellie Y. Yieh
发明人： SRINIVAS D. NEMANI , Shankar Venkataraman , Ellie Y. Yieh
IPC分类号： G03F7/00 , C23F1/00
CPC分类号： G03F7/0757 , H01L21/02164 , H01L21/3086 , H01L21/3105 , H01L21/31111 , H01L21/31612 , H01L21/6719 , H01L21/67207
摘要： Method and systems for patterning a hardmask film using ultraviolet light is disclosed according to one embodiment of the invention. Embodiments of the present invention alleviate the processing problem of depositing and etching photoresist in order to produce a hardmask pattern. A hardmask layer, such as, silicon oxide, is first deposited on a substrate within a deposition chamber. In some cases, the hardmask layer is baked or annealed following deposition. After which, portions of the hardmask layer are exposed with ultraviolet light. The ultraviolet light produces a pattern of exposed and unexposed portions of hardmask material. Following the exposure, an etching process, such as a wet etch, may occur that removes the unexposed portions of the hardmask. Following the etch, the hardmask may be annealed, baked or subjected to a plasma treatment.
摘要翻译：根据本发明的一个实施方案公开了使用紫外光图案化硬掩膜的方法和系统。本发明的实施例减轻了沉积和蚀刻光刻胶的处理问题，以产生硬掩模图案。首先将诸如氧化硅的硬掩模层沉积在沉积室内的衬底上。在一些情况下，硬掩模层在沉积之后被烘烤或退火。之后，硬掩模层的一部分用紫外线照射。紫外光产生硬掩模材料的暴露和未曝光部分的图案。曝光后，可能会发生腐蚀过程，例如湿蚀刻，从而去除硬掩模的未曝光部分。在蚀刻之后，可以对硬掩模进行退火，烘烤或进行等离子体处理。

4. 发明申请

US20090120584A1 COUNTER-BALANCED SUBSTRATE SUPPORT 审中-公开
标题翻译：计数平衡基板支持
公开(公告)号：US20090120584A1
公开(公告)日：2009-05-14
申请号：US12059820
申请日：2008-03-31
申请人： Dmitry Lubomirsky , Toan Q. Tran , Lun Tsuei , Manuel A. Hernandez , Kirby H. Floyd , Ellie Y. Yieh
发明人： Dmitry Lubomirsky , Toan Q. Tran , Lun Tsuei , Manuel A. Hernandez , Kirby H. Floyd , Ellie Y. Yieh
IPC分类号： C23F1/08 , B05C13/00 , B05C15/00 , H01L21/677 , B05C21/00
CPC分类号： H01L21/6719 , H01L21/67017 , H01L21/68742 , H01L21/68792
摘要： A semiconductor processing system is described. The system includes a processing chamber having an interior capable of holding an internal chamber pressure below ambient atmospheric pressure. The system also includes a pumping system coupled to the chamber and adapted to remove material from the processing chamber. The system further includes a substrate support pedestal, where the substrate support pedestal is rigidly coupled to a substrate support shaft extending through a wall of the processing chamber. A bracket located outside the processing chamber is provided which is rigidly and sometimes rotatably coupled to the substrate support shaft. A motor coupled to the bracket can be actuated to vertically translate the substrate support pedestal, shaft and bracket from a first position to a second position closer to a processing plate. A piston mounted on an end of the bracket provides a counter-balancing force to a tilting force, where the tilting force is generated by a change in the internal chamber pressure and causes a deflection in the position of the bracket and the substrate support. The counter-balancing force reduces the deflection of the bracket and the substrate support.
摘要翻译：描述半导体处理系统。该系统包括具有能够将内部室压力保持在环境大气压力以下的内部的处理室。该系统还包括耦合到腔室并适于从处理室移除材料的泵送系统。该系统还包括基板支撑基座，其中基板支撑基座刚性地联接到延伸穿过处理室的壁的基板支撑轴。提供位于处理室外部的支架，其刚性且有时可旋转地联接到基板支撑轴。耦合到支架的马达可以被致动以将基板支撑基座，轴和托架从第一位置垂直平移到靠近处理板的第二位置。安装在支架的端部上的活塞提供与倾斜力的反平衡力，其中倾斜力由内部室压力的变化产生，并且引起支架和基板支撑件的位置的偏转。反平衡力减小了支架和基板支架的挠曲。

5. 发明申请

US20090042407A1 Dual Top Gas Feed Through Distributor for High Density Plasma Chamber 审中-公开
标题翻译：双重顶部气体馈送通过高密度等离子体室的分配器
公开(公告)号：US20090042407A1
公开(公告)日：2009-02-12
申请号：US12253700
申请日：2008-10-17
申请人： Won B. Bang , Srivivas D. Nemani , Phong Pham , Ellie Y. Yieh
发明人： Won B. Bang , Srivivas D. Nemani , Phong Pham , Ellie Y. Yieh
IPC分类号： H01L21/469
CPC分类号： C23C16/45591 , C23C16/4405 , C23C16/45574 , H01J37/3244 , H01J37/32449
摘要： A gas distributor for use in a semiconductor process chamber comprises a body. The body includes a first channel formed within the body and adapted to pass a first fluid from a first fluid supply line through the first channel to a first opening. A second channel is formed within the body and adapted to pass a second fluid from a second fluid supply line through the second channel to a second opening. The first and second openings are arranged to mix the fluids outside the body after the fluids pass through the openings.
摘要翻译：用于半导体处理室的气体分配器包括一个主体。主体包括形成在主体内并适于将第一流体从第一流体供应管线穿过第一通道传递到第一开口的第一通道。第二通道形成在主体内并且适于使来自第二流体供应管线的第二流体通过第二通道传递到第二开口。第一和第二开口布置成在流体通过开口之后将流体混合在体外。

6. 发明申请

US20080121178A1 DUAL TOP GAS FEED THROUGH DISTRIBUTOR FOR HIGH DENSITY PLASMA CHAMBER 有权
标题翻译：通过高密度等离子体分配器输入的双顶气
公开(公告)号：US20080121178A1
公开(公告)日：2008-05-29
申请号：US11564122
申请日：2006-11-28
申请人： Won B. Bang , Srivivas D. Nemani , Phong Pham , Ellie Y. Yieh
发明人： Won B. Bang , Srivivas D. Nemani , Phong Pham , Ellie Y. Yieh
IPC分类号： C23C16/455 , C23C16/40 , C23C16/505
CPC分类号： C23C16/4405 , C23C16/45574 , C23C16/45591 , H01J37/3244 , H01J37/32449
摘要： A gas distributor for use in a semiconductor process chamber comprises a body. The body includes a first channel formed within the body and adapted to pass a first fluid from a first fluid supply line through the first channel to a first opening. A second channel is formed within the body and adapted to pass a second fluid from a second fluid supply line through the second channel to a second opening. The first and second openings are arranged to mix the fluids outside the body after the fluids pass through the openings.
摘要翻译：用于半导体处理室的气体分配器包括一个主体。主体包括形成在主体内并适于将第一流体从第一流体供应管线穿过第一通道传送到第一开口的第一通道。第二通道形成在主体内并且适于使来自第二流体供应管线的第二流体通过第二通道传递到第二开口。第一和第二开口布置成在流体通过开口之后将流体混合在体外。

7. 发明申请

US20080121177A1 DUAL TOP GAS FEED THROUGH DISTRIBUTOR FOR HIGH DENSITY PLASMA CHAMBER 审中-公开
公开(公告)号：US20080121177A1
公开(公告)日：2008-05-29
申请号：US11564105
申请日：2006-11-28
申请人： Won B. Bang , Srivivas D. Nemani , Phong Pham , Ellie Y. Yieh
发明人： Won B. Bang , Srivivas D. Nemani , Phong Pham , Ellie Y. Yieh
IPC分类号： C23C16/455 , H01L21/31 , C23C16/513
CPC分类号： C23C16/45591 , C23C16/4405 , C23C16/45574 , H01J37/3244 , H01J37/32449
摘要： A gas distributor for use in a semiconductor process chamber comprises a body. The body includes a first channel formed within the body and adapted to pass a first fluid from a first fluid supply line through the first channel to a first opening. A second channel is formed within the body and adapted to pass a second fluid from a second fluid supply line through the second channel to a second opening. The first and second openings are arranged to mix the fluids outside the body after the fluids pass through the openings.

8. 发明授权

US07244658B2 Low stress STI films and methods 有权
公开(公告)号：US07244658B2
公开(公告)日：2007-07-17
申请号：US11252400
申请日：2005-10-17
申请人： Ellie Y Yieh , Lung-Tien Han , Anchuan Wang , Lin Zhang
发明人： Ellie Y Yieh , Lung-Tien Han , Anchuan Wang , Lin Zhang
IPC分类号： H01L21/76
CPC分类号： H01L21/76224 , C23C16/045 , C23C16/401 , H01L21/02126 , H01L21/02129 , H01L21/02131 , H01L21/02274 , H01L21/31625 , H01L21/31629
摘要： The present invention generally relates to low compressive stress doped silicate glass films for STI applications. By way of non-limited example, the stress-lowering dopant may be a fluorine dopant, a germanium dopant, or a phosphorous dopant. The low compressive stress STI films will generally exhibit a compressive stress of less than 180 MPa, and preferably less than about 170 MPa. In certain embodiment, the STI films of the invention will exhibit a compressive stress less than about 100 MPa. Further, in certain embodiments, the low compressive stress STI films of the invention will comprise between about 0.1 and 25 atomic % of the stress-lowering dopant.

9. 发明授权

US07115534B2 Dielectric materials to prevent photoresist poisoning 失效
标题翻译：介电材料防止光致抗蚀剂中毒
公开(公告)号：US07115534B2
公开(公告)日：2006-10-03
申请号：US10847891
申请日：2004-05-18
申请人： Son Van Nguyen , Michael D. Armacost , Mehul Naik , Girish A. Dixit , Ellie Y. Yieh
发明人： Son Van Nguyen , Michael D. Armacost , Mehul Naik , Girish A. Dixit , Ellie Y. Yieh
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/76808
摘要： Methods are provided for depositing a dielectric material for use as an anti-reflective coating and sacrificial dielectric material in damascene formation. In one aspect, a process is provided for processing a substrate including depositing an acidic dielectric layer on the substrate by reacting an oxygen-containing organosilicon compound and an acidic compound, depositing a photoresist material on the acidic dielectric layer, and patterning the photoresist layer. The acidic dielectric layer may be used as a sacrificial layer in forming a feature definition by etching a partial feature definition, depositing the acidic dielectric material, etching the remainder of the feature definition, and then removing the acidic dielectric material to form a feature definition.
摘要翻译：提供了用于沉积电介质材料的方法，用作防蚀涂层和牺牲电介质材料在镶嵌形成中。在一个方面，提供了一种处理衬底的方法，包括通过使含氧有机硅化合物和酸性化合物反应，在酸性电介质层上沉积光致抗蚀剂材料，并使光致抗蚀剂层图形化，在衬底上沉积酸性介电层。通过蚀刻部分特征定义，沉积酸性电介质材料，蚀刻特征定义的其余部分，然后除去酸性介电材料以形成特征定义，可以将酸性介电层用作形成特征定义的牺牲层。

10. 发明授权

US07033945B2 Gap filling with a composite layer 失效
标题翻译：间隙填充复合层
公开(公告)号：US07033945B2
公开(公告)日：2006-04-25
申请号：US10857829
申请日：2004-06-01
申请人： Jeong Soo Byun , Zheng Yuan , Shankar Venkataraman , M. Ziaul Karim , Thanh N. Pham , Ellie Y. Yieh
发明人： Jeong Soo Byun , Zheng Yuan , Shankar Venkataraman , M. Ziaul Karim , Thanh N. Pham , Ellie Y. Yieh
IPC分类号： H01L21/311
CPC分类号： H01L21/76224
摘要： A method of filling a gap formed between adjacent raised surfaces on a substrate. In one embodiment the method comprises depositing a boron-doped silica glass (BSG) layer over the substrate to partially fill the gap using a thermal CVD process; exposing the BSG layer to a steam ambient at a temperature above the BSG layer's Eutectic temperature; removing an upper portion of the BSG layer by exposing the layer to a fluorine-containing etchant; and depositing an undoped silica glass (USG) layer over the BSG layer to fill the remainder of the gap.
摘要翻译：填充在基板上相邻的凸起表面之间形成的间隙的方法。在一个实施例中，该方法包括在衬底上沉积硼掺杂石英玻璃（BSG）层，以使用热CVD工艺部分填充间隙; 在高于BSG层的共晶温度的温度下将BSG层暴露于蒸汽环境; 通过将层暴露于含氟蚀刻剂来除去BSG层的上部; 以及在BSG层上沉积未掺杂的二氧化硅玻璃（USG）层以填补间隙的剩余部分。

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