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31. 发明申请

US20080268171A1 APPARATUS AND PROCESS FOR PLASMA-ENHANCED ATOMIC LAYER DEPOSITION 有权
标题翻译：等离子体增强原子层沉积的装置和方法
公开(公告)号：US20080268171A1
公开(公告)日：2008-10-30
申请号：US11873129
申请日：2007-10-16
申请人： PAUL MA , Kavita Shah , Dien-Yeh Wu , Seshadri Ganguli , Christophe Marcadal , Frederick C. Wu , Schubert S. Chu
发明人： PAUL MA , Kavita Shah , Dien-Yeh Wu , Seshadri Ganguli , Christophe Marcadal , Frederick C. Wu , Schubert S. Chu
IPC分类号： C23C16/00
CPC分类号： C23C16/45544 , C23C16/18 , C23C16/45536 , C23C16/45542 , C23C16/45553 , C23C16/45563 , C23C16/45565 , C23C16/509 , C23C16/5096 , H01J37/32082 , H01J37/3244 , H01J37/32449 , H01J37/32522 , H01J37/32623 , H01J37/32633 , H01L21/28562 , H01L21/76844 , H01L21/76846 , H01L21/76873 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： Embodiments of the invention provide an apparatus configured to form a material during an atomic layer deposition (ALD) process, such as a plasma-enhanced ALD (PE-ALD) process. In one embodiment, a plasma baffle assembly for receiving a process gas within a plasma-enhanced vapor deposition chamber is provided which includes a plasma baffle plate containing an upper surface to receive a process gas and a lower surface to emit the process gas, a plurality of openings configured to flow the process gas from above the upper surface to below the lower surface, wherein each opening is positioned at a predetermined angle of a vertical axis that is perpendicular to the lower surface, and a conical nose cone on the upper surface. In one example, the openings are slots positioned at a predetermined angle to emit the process gas with a circular flow pattern.
摘要翻译：本发明的实施例提供一种被配置为在诸如等离子体增强型ALD（PE-ALD）工艺的原子层沉积（ALD）工艺期间形成材料的装置。在一个实施例中，提供了用于接收等离子体增强气相沉积室内的处理气体的等离子体挡板组件，其包括含有上表面以接收处理气体的等离子体挡板和用于发射处理气体的下表面，多个的开口，其被配置为使处理气体从上表面上方流动到下表面下方，其中每个开口定位在垂直于下表面的垂直轴线的预定角度以及在上表面上的锥形鼻锥。在一个示例中，开口是以预定角度定位的槽，以以圆形流动图案发射处理气体。

32. 发明申请

US20080149031A1 AMPOULE WITH A THERMALLY CONDUCTIVE COATING 有权
标题翻译：具有导热涂层的安瓿
公开(公告)号：US20080149031A1
公开(公告)日：2008-06-26
申请号：US11960212
申请日：2007-12-19
申请人： SCHUBERT S. CHU , Christophe Marcadal , Seshadri Ganguli , Norman M. Nakashima , Dien-Yeh Wu
发明人： SCHUBERT S. CHU , Christophe Marcadal , Seshadri Ganguli , Norman M. Nakashima , Dien-Yeh Wu
IPC分类号： C23C16/00
CPC分类号： C23C16/4482 , C23C16/4481
摘要： Embodiments of the invention provide an apparatus and a process for generating a chemical precursor used in a vapor deposition processing system. The apparatus includes a canister (e.g., ampoule) having a sidewall, a top, and a bottom encompassing an interior volume therein, inlet and outlet ports in fluid communication with the interior volume, and a thermally conductive coating disposed on or over the outside surface of the canister. The thermally conductive coating is more thermally conductive than the outside surface of the canister. The thermally conductive coating may contain aluminum, aluminum nitride, copper, brass, silver, titanium, silicon nitride, or alloys thereof. In some embodiments, an adhesion layer (e.g., titanium or tantalum) may be disposed between the outside surface of the canister and the thermally conductive coating. In other embodiments, the canister may contain a plurality of baffles or solid heat-transfer particles to help evenly heat a solid precursor therein.
摘要翻译：本发明的实施方案提供了用于产生在气相沉积处理系统中使用的化学前体的装置和方法。该装置包括具有侧壁，顶部和底部的罐（例如，安瓿），其内部容纳有内部容积，与内部空间流体连通的入口和出口以及设置在外表面上或上方的导热涂层的罐子。导热涂层比罐的外表面更加导热。导热涂层可以含有铝，氮化铝，铜，黄铜，银，钛，氮化硅或其合金。在一些实施例中，粘合层（例如，钛或钽）可以设置在罐的外表面和导热涂层之间。在其它实施例中，罐可以包含多个挡板或固体传热颗粒以帮助均匀地加热其中的固体前体。

33. 发明申请

US20070235059A1 Method of recovering valuable material from exhaust gas stream of a reaction chamber 有权
标题翻译：从反应室的废气流中回收有价物质的方法
公开(公告)号：US20070235059A1
公开(公告)日：2007-10-11
申请号：US11400663
申请日：2006-04-07
申请人： Schubert Chu , Frederick Wu , Christophe Marcadal , Seshadri Ganguli , Dien-Yeh Wu , Kavita Shah , Paul Ma
发明人： Schubert Chu , Frederick Wu , Christophe Marcadal , Seshadri Ganguli , Dien-Yeh Wu , Kavita Shah , Paul Ma
IPC分类号： B08B6/00 , C25F1/00
CPC分类号： B08B7/0035 , C23C16/4405 , C23C16/52 , Y02C20/30 , Y10S438/905
摘要： A semiconductor processing chamber is cleaned by introducing a cleaning gas into a processing chamber, striking a plasma in a remote plasma source that is in communication with the processing chamber, measuring the impedance of the plasma, vaporizing a ruthenium containing deposit on a surface of the processing chamber to form a ruthenium containing gas mixture, and flowing the gas mixture through an analyzer and into an exhaust collection assembly. The measurement of the impedance of the plasma in combination with the ruthenium concentration provides an accurate indication of chamber cleanliness.
摘要翻译：通过将清洁气体引入处理室，冲击与处理室连通的远程等离子体源中的等离子体来测量半导体处理室，测量等离子体的阻抗，将含有钌的沉积物汽化在处理室以形成含钌气体混合物，并使气体混合物流过分析器并进入排气收集组件。等离子体的阻抗与钌浓度结合的测量提供了室清洁度的精确指示。

34. 发明授权

US07833358B2 Method of recovering valuable material from exhaust gas stream of a reaction chamber 有权
标题翻译：从反应室的废气流中回收有价物质的方法
公开(公告)号：US07833358B2
公开(公告)日：2010-11-16
申请号：US11400663
申请日：2006-04-07
申请人： Schubert S. Chu , Frederick C. Wu , Christophe Marcadal , Seshadri Ganguli , Dien-Yeh Wu , Kavita Shah , Paul Ma
发明人： Schubert S. Chu , Frederick C. Wu , Christophe Marcadal , Seshadri Ganguli , Dien-Yeh Wu , Kavita Shah , Paul Ma
IPC分类号： B08B7/00 , B08B9/00
CPC分类号： B08B7/0035 , C23C16/4405 , C23C16/52 , Y02C20/30 , Y10S438/905
摘要： A semiconductor processing chamber is cleaned by introducing a cleaning gas into a processing chamber, striking a plasma in a remote plasma source that is in communication with the processing chamber, measuring the impedance of the plasma, vaporizing a ruthenium containing deposit on a surface of the processing chamber to form a ruthenium containing gas mixture, and flowing the gas mixture through an analyzer and into an exhaust collection assembly. The measurement of the impedance of the plasma in combination with the ruthenium concentration provides an accurate indication of chamber cleanliness.
摘要翻译：通过将清洁气体引入处理室，冲击与处理室连通的远程等离子体源中的等离子体来测量半导体处理室，测量等离子体的阻抗，将含有钌的沉积物汽化在处理室以形成含钌气体混合物，并使气体混合物流过分析器并进入排气收集组件。结合钌浓度的等离子体阻抗的测量提供了室清洁度的精确指示。

35. 发明申请

US20070119370A1 APPARATUS AND PROCESS FOR PLASMA-ENHANCED ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：等离子体增强原子层沉积的装置和方法
公开(公告)号：US20070119370A1
公开(公告)日：2007-05-31
申请号：US11556745
申请日：2006-11-06
申请人： PAUL MA , Kavita Shah , Dien-Yeh Wu , Seshadri Ganguli , Christophe Marcadal , Frederick Wu , Schubert Chu
发明人： PAUL MA , Kavita Shah , Dien-Yeh Wu , Seshadri Ganguli , Christophe Marcadal , Frederick Wu , Schubert Chu
IPC分类号： C23C16/00
CPC分类号： C23C16/45544 , C23C16/18 , C23C16/45536 , C23C16/45542 , C23C16/45553 , C23C16/45563 , C23C16/45565 , C23C16/509 , C23C16/5096 , H01J37/32082 , H01J37/3244 , H01J37/32449 , H01J37/32522 , H01J37/32623 , H01J37/32633 , H01L21/28562 , H01L21/76844 , H01L21/76846 , H01L21/76873 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： Embodiments of the invention provide an apparatus configured to form a material during an atomic layer deposition (ALD) process, such as a plasma-enhanced ALD (PE-ALD) process. In one embodiment, a process chamber is configured to expose a substrate to a sequence of gases and plasmas during a PE-ALD process. The process chamber comprises components that are capable of being electrically insulated, electrically grounded or RF energized. In one example, a chamber body and a gas manifold assembly are grounded and separated by electrically insulated components, such as an insulation cap, a plasma screen insert and an isolation ring. A showerhead, a plasma baffle and a water box are positioned between the insulated components and become RF hot when activated by a plasma generator. Other embodiments of the invention provide deposition processes to form layers of materials within the process chamber.
摘要翻译：本发明的实施例提供一种被配置为在诸如等离子体增强型ALD（PE-ALD）工艺的原子层沉积（ALD）工艺期间形成材料的装置。在一个实施例中，处理室被配置为在PE-ALD过程期间将衬底暴露于一系列气体和等离子体。处理室包括能够被电绝缘，电接地或RF通电的部件。在一个示例中，室主体和气体歧管组件由诸如绝缘盖，等离子体屏幕插件和隔离环之类的电绝缘部件接地并分离。一个喷头，等离子体挡板和水箱位于绝缘部件之间，当被等离子体发生器激活时变为RF热。本发明的其它实施例提供沉积工艺以在处理室内形成材料层。

36. 发明申请

US20070077750A1 ATOMIC LAYER DEPOSITION PROCESSES FOR RUTHENIUM MATERIALS 审中-公开
标题翻译：原子材料的原子层沉积工艺
公开(公告)号：US20070077750A1
公开(公告)日：2007-04-05
申请号：US11470473
申请日：2006-09-06
申请人： Paul Ma , Kavita Shah , Dien-Yeh Wu , Seshadri Ganguli , Christophe Marcadal , Frederick Wu , Schubert Chu
发明人： Paul Ma , Kavita Shah , Dien-Yeh Wu , Seshadri Ganguli , Christophe Marcadal , Frederick Wu , Schubert Chu
IPC分类号： H01L21/4763 , H01L21/00
CPC分类号： H01L21/28562 , C23C16/045 , C23C16/18 , C23C16/45553 , H01L21/76843 , H01L21/76873 , H01L2221/1089
摘要： Embodiments of the invention provide a method for depositing ruthenium materials on a substrate by various vapor deposition processes, such as atomic layer deposition (ALD) and plasma-enhanced ALD (PE-ALD). In one aspect, the process has little or no initiation delay and maintains a fast deposition rate while forming a ruthenium material. The ruthenium material may be deposited with good step coverage, strong adhesion, and contains a low carbon concentration for high electrical conductivity. The method for depositing the ruthenium material on a substrate generally includes sequentially exposing the substrate to a pyrrolyl ruthenium precursor and a reagent during the ALD process. The pyrrolyl ruthenium precursor contains ruthenium and at least one pyrrolyl ligand. In some examples, the reagent may contain a plasma of ammonia, nitrogen, or hydrogen during a PE-ALD process. In other examples, a reducing gas may be used during a thermal ALD process.
摘要翻译：本发明的实施方案提供了一种通过诸如原子层沉积（ALD）和等离子体增强型ALD（PE-ALD）之类的各种气相沉积工艺在基片上沉积钌材料的方法。在一个方面，该方法很少或没有引发延迟并且在形成钌材料时保持快速的沉积速率。钌材料可以以良好的阶梯覆盖，强粘附性沉积，并且包含低碳浓度用于高电导率。用于在基底上沉积钌材料的方法通常包括在ALD工艺期间将衬底顺序地暴露于吡咯基钌前体和试剂。吡咯钌前体含有钌和至少一个吡咯基配体。在一些实例中，在PE-ALD工艺期间，试剂可以含有氨，氮或氢的等离子体。在其他实例中，在热ALD工艺期间可以使用还原气体。

37. 发明授权

US09032906B2 Apparatus and process for plasma-enhanced atomic layer deposition 有权
标题翻译：等离子体增强原子层沉积的装置和工艺
公开(公告)号：US09032906B2
公开(公告)日：2015-05-19
申请号：US11873129
申请日：2007-10-16
申请人： Paul Ma , Kavita Shah , Dien-Yeh Wu , Seshadri Ganguli , Christophe Marcadal , Frederick C. Wu , Schubert S. Chu
发明人： Paul Ma , Kavita Shah , Dien-Yeh Wu , Seshadri Ganguli , Christophe Marcadal , Frederick C. Wu , Schubert S. Chu
IPC分类号： C23C16/50 , C23C16/455 , C23C16/18 , C23C16/509 , H01J37/32 , H01L21/285 , H01L21/768
CPC分类号： C23C16/45544 , C23C16/18 , C23C16/45536 , C23C16/45542 , C23C16/45553 , C23C16/45563 , C23C16/45565 , C23C16/509 , C23C16/5096 , H01J37/32082 , H01J37/3244 , H01J37/32449 , H01J37/32522 , H01J37/32623 , H01J37/32633 , H01L21/28562 , H01L21/76844 , H01L21/76846 , H01L21/76873 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： Embodiments of the invention provide an apparatus configured to form a material during an atomic layer deposition (ALD) process, such as a plasma-enhanced ALD (PE-ALD) process. In one embodiment, a plasma baffle assembly for receiving a process gas within a plasma-enhanced vapor deposition chamber is provided which includes a plasma baffle plate containing an upper surface to receive a process gas and a lower surface to emit the process gas, a plurality of openings configured to flow the process gas from above the upper surface to below the lower surface, wherein each opening is positioned at a predetermined angle of a vertical axis that is perpendicular to the lower surface, and a conical nose cone on the upper surface. In one example, the openings are slots positioned at a predetermined angle to emit the process gas with a circular flow pattern.
摘要翻译：本发明的实施例提供一种被配置为在诸如等离子体增强型ALD（PE-ALD）工艺的原子层沉积（ALD）工艺期间形成材料的装置。在一个实施例中，提供了用于接收等离子体增强气相沉积室内的处理气体的等离子体挡板组件，其包括含有上表面以接收处理气体的等离子体挡板和用于发射处理气体的下表面，多个的开口，其被配置为使处理气体从上表面上方流动到下表面下方，其中每个开口定位在垂直于下表面的垂直轴线的预定角度以及在上表面上的锥形鼻锥。在一个示例中，开口是以预定角度定位的槽，以以圆形流动图案发射处理气体。

38. 发明授权

US08951478B2 Ampoule with a thermally conductive coating 有权
标题翻译：具有导热涂层的安瓿
公开(公告)号：US08951478B2
公开(公告)日：2015-02-10
申请号：US11960212
申请日：2007-12-19
申请人： Schubert S. Chu , Christophe Marcadal , Seshadri Ganguli , Norman M. Nakashima , Dien-Yeh Wu
发明人： Schubert S. Chu , Christophe Marcadal , Seshadri Ganguli , Norman M. Nakashima , Dien-Yeh Wu
IPC分类号： B01J10/00 , C23C16/448
CPC分类号： C23C16/4482 , C23C16/4481
摘要： Embodiments of the invention provide an apparatus and a process for generating a chemical precursor used in a vapor deposition processing system. The apparatus includes a canister (e.g., ampoule) having a sidewall, a top, and a bottom encompassing an interior volume therein, inlet and outlet ports in fluid communication with the interior volume, and a thermally conductive coating disposed on or over the outside surface of the canister. The thermally conductive coating is more thermally conductive than the outside surface of the canister. The thermally conductive coating may contain aluminum, aluminum nitride, copper, brass, silver, titanium, silicon nitride, or alloys thereof. In some embodiments, an adhesion layer (e.g., titanium or tantalum) may be disposed between the outside surface of the canister and the thermally conductive coating. In other embodiments, the canister may contain a plurality of baffles or solid heat-transfer particles to help evenly heat a solid precursor therein.
摘要翻译：本发明的实施方案提供了用于产生在气相沉积处理系统中使用的化学前体的装置和方法。该装置包括具有侧壁，顶部和底部的罐（例如，安瓿），其内部容纳有内部容积，与内部空间流体连通的入口和出口以及设置在外表面上或上方的导热涂层的罐子。导热涂层比罐的外表面更加导热。导热涂层可以含有铝，氮化铝，铜，黄铜，银，钛，氮化硅或其合金。在一些实施例中，粘合层（例如，钛或钽）可以设置在罐的外表面和导热涂层之间。在其它实施例中，罐可以包含多个挡板或固体传热颗粒以帮助均匀地加热其中的固体前体。

39. 发明授权

US07850779B2 Apparatus and process for plasma-enhanced atomic layer deposition 失效
标题翻译：等离子体增强原子层沉积的装置和工艺
公开(公告)号：US07850779B2
公开(公告)日：2010-12-14
申请号：US11556758
申请日：2006-11-06
申请人： Paul Ma , Kavita Shah , Dien-Yeh Wu , Seshadri Ganguli , Christophe Marcadal , Frederick C. Wu , Schubert S. Chu
发明人： Paul Ma , Kavita Shah , Dien-Yeh Wu , Seshadri Ganguli , Christophe Marcadal , Frederick C. Wu , Schubert S. Chu
IPC分类号： C23C16/452 , H01L21/306
CPC分类号： C23C16/45544 , C23C16/18 , C23C16/45536 , C23C16/45542 , C23C16/45553 , C23C16/45563 , C23C16/45565 , C23C16/509 , C23C16/5096 , H01J37/32082 , H01J37/3244 , H01J37/32449 , H01J37/32522 , H01J37/32623 , H01J37/32633 , H01L21/28562 , H01L21/76844 , H01L21/76846 , H01L21/76873 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： Embodiments of the invention provide an apparatus configured to form a material during an atomic layer deposition (ALD) process, such as a plasma-enhanced ALD (PE-ALD) process. In one embodiment, a lid assembly for conducting a vapor deposition process within a process chamber is provided which includes an insulation cap and a plasma screen. In one example, the insulation cap has a centralized channel configured to flow a first process gas from an upper surface to an expanded channel and an outer channel configured to flow a second process gas from an upper surface to a groove which is encircling the expanded channel. In one example, the plasma screen has an upper surface containing an inner area with a plurality of holes and an outer area with a plurality of slots. The insulation cap may be positioned on top of the plasma screen to form a centralized gas region with the expanded channel and a circular gas region with the groove.
摘要翻译：本发明的实施例提供一种被配置为在诸如等离子体增强型ALD（PE-ALD）工艺的原子层沉积（ALD）工艺期间形成材料的装置。在一个实施例中，提供了一种用于在处理室内进行气相沉积工艺的盖组件，其包括绝缘盖和等离子体屏。在一个示例中，绝缘帽具有被配置为使第一处理气体从上表面流动到扩张通道的集中通道，以及构造成将第二处理气体从上表面流动到围绕扩展通道的凹槽的外通道。在一个示例中，等离子体屏幕具有包含具有多个孔的内部区域和具有多个狭槽的外部区域的上表面。绝缘帽可以位于等离子体屏幕的顶部，以形成具有扩展通道的集中气体区域和具有凹槽的圆形气体区域。

40. 发明申请

US20070128862A1 APPARATUS AND PROCESS FOR PLASMA-ENHANCED ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：等离子体增强原子层沉积的装置和方法
公开(公告)号：US20070128862A1
公开(公告)日：2007-06-07
申请号：US11556756
申请日：2006-11-06
申请人： Paul Ma , Kavita Shah , Dien-Yeh Wu , Seshadri Ganguli , Christophe Marcadal , Frederick Wu , Schubert Chu
发明人： Paul Ma , Kavita Shah , Dien-Yeh Wu , Seshadri Ganguli , Christophe Marcadal , Frederick Wu , Schubert Chu
IPC分类号： H01L21/44 , H01L23/34
CPC分类号： C23C16/45544 , C23C16/18 , C23C16/45536 , C23C16/45542 , C23C16/45553 , C23C16/45563 , C23C16/45565 , C23C16/509 , C23C16/5096 , H01J37/32082 , H01J37/3244 , H01J37/32449 , H01J37/32522 , H01J37/32623 , H01J37/32633 , H01L21/28562 , H01L21/76844 , H01L21/76846 , H01L21/76873 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： Embodiments of the invention provide an apparatus configured to form a material during an atomic layer deposition (ALD) process, such as a plasma-enhanced ALD (PE-ALD) process. In one embodiment, a showerhead assembly comprises a showerhead and a plasma baffle that are used to disperse process gases within a plasma-enhanced vapor deposition chamber. The showerhead plate comprises an inner area configured to position the plasma baffle therein and an outer area which has a plurality of holes for emitting a process gas. The plasma baffle comprises a conical nose disposed on an upper surface to receive another process gas, a lower surface to emit the process gas and a plurality of openings configured to flow the process gas from above the upper surface into a process region. The openings are preferably slots that are positioned at predetermined angle for emitting the process gas with a circular flow pattern.
摘要翻译：本发明的实施例提供一种被配置为在诸如等离子体增强型ALD（PE-ALD）工艺的原子层沉积（ALD）工艺期间形成材料的装置。在一个实施例中，喷头组件包括用于在等离子体增强的气相沉积室内分散工艺气体的喷头和等离子体挡板。喷头板包括配置成将等离子体挡板定位在其中的内部区域和具有用于发射处理气体的多个孔的外部区域。等离子体挡板包括设置在上表面上以接收另一工艺气体的锥形鼻，用于发射处理气体的下表面和被配置为将工艺气体从上表面上流动到工艺区域中的多个开口。开口优选地以预定角度定位以用于以圆形流动图案发射处理气体的槽。

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