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1. 发明授权

US08895443B2 N-metal film deposition with initiation layer 有权
标题翻译：具有起始层的N金属膜沉积
公开(公告)号：US08895443B2
公开(公告)日：2014-11-25
申请号：US13525604
申请日：2012-06-18
申请人： Seshadri Ganguli , Xinliang Lu , Atif Noori , Maitreyee Mahajani , Shih Chung Chen , Mei Chang
发明人： Seshadri Ganguli , Xinliang Lu , Atif Noori , Maitreyee Mahajani , Shih Chung Chen , Mei Chang
IPC分类号： H01L21/44 , H01L21/28
CPC分类号： H01L21/28088
摘要： Provided are methods of depositing N-Metals onto a substrate. Some methods comprise providing an initiation layer of TaM or TiM layer on a substrate, wherein M is selected from aluminum, carbon, noble metals, gallium, silicon, germanium and combinations thereof; and exposing the substrate having the TaM or TiM layer to a treatment process comprising soaking the surface of the substrate with a reducing agent to provided a treated initiation layer.
摘要翻译：提供了将N-金属沉积到基底上的方法。一些方法包括在衬底上提供TaM或TiM层的起始层，其中M选自铝，碳，贵金属，镓，硅，锗及其组合; 以及将具有TaM或TiM层的衬底暴露于包括用还原剂浸泡衬底的表面以提供经处理的起始层的处理工艺。

2. 发明授权

US08637410B2 Method for metal deposition using hydrogen plasma 失效
标题翻译：使用氢等离子体的金属沉积方法
公开(公告)号：US08637410B2
公开(公告)日：2014-01-28
申请号：US13082968
申请日：2011-04-08
申请人： Anantha K. Subramani , John C. Forster , Seshadri Ganguli , Michael S. Jackson , Xinliang Lu , Wei W. Wang , Xinyu Fu , Yu Lei
发明人： Anantha K. Subramani , John C. Forster , Seshadri Ganguli , Michael S. Jackson , Xinliang Lu , Wei W. Wang , Xinyu Fu , Yu Lei
IPC分类号： H01L21/31
CPC分类号： C23C16/08 , C23C16/45542 , H01L21/28079 , H01L21/28518 , H01L21/28556 , H01L21/28562 , H01L21/32051 , H01L21/76843 , H01L29/495 , H01L29/513 , H01L29/517
摘要： Methods for formation and treatment of pure metal layers using CVD and ALD techniques are provided. In one or more embodiments, the method includes forming a metal precursor layer and treating the metal precursor layer to a hydrogen plasma to reduce the metal precursor layer to form a metal layer. In one or more embodiments, treating the metal precursor layer includes exposing the metal precursor layer to a high frequency-generated hydrogen plasma. Methods of preventing a hydrogen plasma from penetrating a metal precursor layer are also provided.
摘要翻译：提供了使用CVD和ALD技术形成和处理纯金属层的方法。在一个或多个实施方案中，该方法包括形成金属前体层并将金属前体层处理成氢等离子体以还原金属前体层以形成金属层。在一个或多个实施方案中，处理金属前体层包括将金属前体层暴露于高频产生的氢等离子体。还提供了防止氢等离子体渗透金属前体层的方法。

3. 发明申请

US20130295759A1 Methods For Manufacturing Metal Gates 有权
标题翻译：制造金属门的方法
公开(公告)号：US20130295759A1
公开(公告)日：2013-11-07
申请号：US13865285
申请日：2013-04-18
申请人： Xinliang Lu , Seshadri Ganguli , Atif Noori , Maitreyee Mahajani , Shih Chung Chen , Yu Lei , Xinyu Fu , Wei Tang , Srinivas Gandikota
发明人： Xinliang Lu , Seshadri Ganguli , Atif Noori , Maitreyee Mahajani , Shih Chung Chen , Yu Lei , Xinyu Fu , Wei Tang , Srinivas Gandikota
IPC分类号： H01L29/66
CPC分类号： H01L29/66477 , H01L21/28088 , H01L21/3221 , H01L21/823821 , H01L21/823842 , H01L29/4966 , H01L29/78
摘要： Provided are methods for making metal gates suitable for FinFET structures. The methods described herein generally involve forming a high-k dielectric material on a semiconductor substrate; depositing a high-k dielectric cap layer over the high-k dielectric material; depositing a PMOS work function layer having a positive work function value; depositing an NMOS work function layer; depositing an NMOS work function cap layer over the NMOS work function layer; removing at least a portion of the PMOS work function layer or at least a portion of the NMOS work function layer; and depositing a fill layer. Depositing a high-k dielectric cap layer, depositing a PMOS work function layer or depositing a NMOS work function cap layer may comprise atomic layer deposition of TiN, TiSiN, or TiAlN. Either PMOS or NMOS may be deposited first.
摘要翻译：提供了适用于FinFET结构的金属栅极的方法。本文描述的方法通常涉及在半导体衬底上形成高k电介质材料; 在高k电介质材料上沉积高k电介质盖层; 沉积具有正功函数值的PMOS功函数层; 沉积NMOS工作功能层; 在NMOS工作功能层上沉积NMOS工作功能覆盖层; 去除所述PMOS功函数层的至少一部分或所述NMOS功函数层的至少一部分; 并沉积填充层。沉积高k电介质盖层，沉积PMOS功函数层或沉积NMOS工作功能覆盖层可包括TiN，TiSiN或TiAlN的原子层沉积。可以首先沉积PMOS或NMOS。

4. 发明申请

US20130146468A1 CHEMICAL VAPOR DEPOSITION (CVD) OF RUTHENIUM FILMS AND APPLICATIONS FOR SAME 审中-公开
标题翻译： RUMEN膜的化学气相沉积（CVD）及其应用
公开(公告)号：US20130146468A1
公开(公告)日：2013-06-13
申请号：US13314926
申请日：2011-12-08
申请人： HOON KIM , SANG HYEOB LEE , WEI TI LEE , SESHADRI GANGULI , HYOUNG-CHAN HA , SANG HO YU
发明人： HOON KIM , SANG HYEOB LEE , WEI TI LEE , SESHADRI GANGULI , HYOUNG-CHAN HA , SANG HO YU
IPC分类号： C23C28/02 , C23C16/56 , B05D5/12 , C23C16/44
CPC分类号： C23C16/18 , C23C16/40 , C23C16/56 , C23C28/02 , C23C28/023
摘要： Methods for depositing ruthenium-containing films are disclosed herein. In some embodiments, a method of depositing a ruthenium-containing film on a substrate may include depositing a ruthenium-containing film on a substrate using a ruthenium-containing precursor, the deposited ruthenium-containing film having carbon incorporated therein; and exposing the deposited ruthenium-containing layer to a hydrogen-containing gas to remove at least some of the carbon from the deposited ruthenium-containing film. In some embodiments, the hydrogen-containing gas exposed ruthenium-containing film may be subsequently exposed to an oxygen-containing gas to at least one of remove at least some carbon from or add oxygen to the ruthenium-containing film. In some embodiments, the deposition and exposure to the hydrogen-containing gas and optionally, the oxygen-containing gas may be repeated to deposit the ruthenium-containing film to a desired thickness.
摘要翻译：本文公开了沉积含钌膜的方法。在一些实施方案中，在基材上沉积含钌膜的方法可以包括使用含钌前驱体将沉积的含钌膜沉积在基板上，并将沉积的含钌层暴露于含氢气体中以从沉积的含钌膜中除去至少一些碳。在一些实施方案中，暴露含钌的含氟膜的膜随后可以暴露于含氧气体中至少一种，以将至少一些碳从氧钌中除去或添加至含钌膜。在一些实施方案中，可以重复沉积和暴露于含氢气体和任选地含氧气体，以将含钌膜沉积到所需厚度。

5. 发明申请

US20120322250A1 N-Metal Film Deposition With Initiation Layer 有权
标题翻译：带起始层的N金属膜沉积
公开(公告)号：US20120322250A1
公开(公告)日：2012-12-20
申请号：US13525604
申请日：2012-06-18
申请人： Seshadri Ganguli , Xinliang Lu , Atif Noori , Maitreyee Mahajani , Shih Chung Chen , Mei Chang
发明人： Seshadri Ganguli , Xinliang Lu , Atif Noori , Maitreyee Mahajani , Shih Chung Chen , Mei Chang
IPC分类号： H01L21/283
CPC分类号： H01L21/28088
摘要： Provided are methods of depositing N-Metals onto a substrate. Some methods comprise providing an initiation layer of TaM or TiM layer on a substrate, wherein M is selected from aluminum, carbon, noble metals, gallium, silicon, germanium and combinations thereof; and exposing the substrate having the TaM or TiM layer to a treatment process comprising soaking the surface of the substrate with a reducing agent to provided a treated initiation layer.
摘要翻译：提供了将N-金属沉积到基底上的方法。一些方法包括在衬底上提供TaM或TiM层的起始层，其中M选自铝，碳，贵金属，镓，硅，锗及其组合; 以及将具有TaM或TiM层的衬底暴露于包括用还原剂浸泡衬底的表面以提供经处理的起始层的处理工艺。

6. 发明授权

US08110489B2 Process for forming cobalt-containing materials 失效
标题翻译：用于形成含钴材料的方法
公开(公告)号：US08110489B2
公开(公告)日：2012-02-07
申请号：US11733929
申请日：2007-04-11
申请人： Seshadri Ganguli , Schubert S. Chu , Mei Chang , Sang-Ho Yu , Kevin Moraes , See-Eng Phan
发明人： Seshadri Ganguli , Schubert S. Chu , Mei Chang , Sang-Ho Yu , Kevin Moraes , See-Eng Phan
IPC分类号： H01L21/28
CPC分类号： C23C16/42 , C23C16/18 , C23C16/56 , H01L21/0206 , H01L21/02063 , H01L21/28518 , H01L21/28556 , H01L21/28562 , H01L21/67207 , H01L21/68785 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L29/665 , H01L29/78
摘要： Embodiments of the invention described herein generally provide methods and apparatuses for forming cobalt silicide layers, metallic cobalt layers, and other cobalt-containing materials. In one embodiment, a method for forming a cobalt silicide containing material on a substrate is provided which includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, depositing a metallic cobalt material on the cobalt silicide material, and depositing a metallic contact material on the substrate. In another embodiment, a method includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, expose the substrate to an annealing process, depositing a barrier material on the cobalt silicide material, and depositing a metallic contact material on the barrier material.
摘要翻译：本文所述的本发明的实施例通常提供用于形成硅化钴层，金属钴层和其它含钴材料的方法和装置。在一个实施例中，提供了一种用于在衬底上形成含钴硅化物的材料的方法，其包括将衬底暴露于至少一个预清洗工艺以暴露含硅表面，在含硅表面上沉积钴硅化物材料，沉积在钴硅化物材料上的金属钴材料，并在基底上沉积金属接触材料。在另一个实施例中，一种方法包括将衬底暴露于至少一个预清洗工艺以暴露含硅表面，在含硅表面上沉积钴硅化物材料，将衬底暴露于退火工艺，将阻挡材料沉积在钴硅化物材料，并将金属接触材料沉积在阻挡材料上。

7. 发明申请

US20110263115A1 NMOS METAL GATE MATERIALS, MANUFACTURING METHODS, AND EQUIPMENT USING CVD AND ALD PROCESSES WITH METAL BASED PRECURSORS 有权
标题翻译： NMOS金属栅材料，制造方法和使用基于金属的前驱体的CVD和ALD工艺的设备
公开(公告)号：US20110263115A1
公开(公告)日：2011-10-27
申请号：US13093710
申请日：2011-04-25
申请人： Seshadri Ganguli , Srinivas Gandikota , Yu Lei , Xinliang Lu , Sang Ho Yu , Hoon Kim , Paul F. Ma , Mei Chang , Maitreyee Mahajani , Patricia M. Liu
发明人： Seshadri Ganguli , Srinivas Gandikota , Yu Lei , Xinliang Lu , Sang Ho Yu , Hoon Kim , Paul F. Ma , Mei Chang , Maitreyee Mahajani , Patricia M. Liu
IPC分类号： H01L21/3205
CPC分类号： H01L21/28008 , C23C16/06 , C23C16/32 , C23C16/42 , C23C16/45542 , H01L21/28079 , H01L21/28088 , H01L21/28097 , H01L21/28562 , H01L21/76843 , H01L21/76871 , H01L21/823814 , H01L21/823842 , H01L29/495 , H01L29/4966
摘要： Embodiments of the invention generally provide methods for depositing metal-containing materials and compositions thereof. The methods include deposition processes that form metal, metal carbide, metal silicide, metal nitride, and metal carbide derivatives by a vapor deposition process, including thermal decomposition, CVD, pulsed-CVD, or ALD. In one embodiment, a method for processing a substrate is provided which includes depositing a dielectric material having a dielectric constant greater than 10, forming a feature definition in the dielectric material, depositing a work function material conformally on the sidewalls and bottom of the feature definition, and depositing a metal gate fill material on the work function material to fill the feature definition, wherein the work function material is deposited by reacting at least one metal-halide precursor having the formula MXY, wherein M is tantalum, hafnium, titanium, and lanthanum, X is a halide selected from the group of fluorine, chlorine, bromine, or iodine, and y is from 3 to 5.
摘要翻译：本发明的实施方案通常提供沉积含金属材料及其组合物的方法。所述方法包括通过包括热分解，CVD，脉冲CVD或ALD的气相沉积工艺形成金属，金属碳化物，金属硅化物，金属氮化物和金属碳化物衍生物的沉积工艺。在一个实施例中，提供了一种用于处理衬底的方法，其包括沉积具有大于10的介电常数的介电材料，在电介质材料中形成特征定义，在功能定义的侧壁和底部上共同保存功函件材料并且将金属浇注填充材料沉积在功函材料上以填充特征定义，其中通过使具有式MXY的至少一种金属卤化物前体反应沉积功函材料，其中M是钽，铪，钛和镧，X是选自氟，氯，溴或碘的卤化物，y为3〜5。

8. 发明授权

US07832432B2 Chemical delivery apparatus for CVD or ALD 有权
标题翻译：用于CVD或ALD的化学输送装置
公开(公告)号：US07832432B2
公开(公告)日：2010-11-16
申请号：US12500319
申请日：2009-07-09
申请人： Norman Nakashima , Christophe Marcadal , Seshadri Ganguli , Paul Ma , Schubert S. Chu
发明人： Norman Nakashima , Christophe Marcadal , Seshadri Ganguli , Paul Ma , Schubert S. Chu
IPC分类号： F16K3/36 , F16K11/20
CPC分类号： C23C16/4481 , C23C16/4408 , C23C16/45561 , Y10T137/3127 , Y10T137/4259 , Y10T137/87249 , Y10T137/877
摘要： Embodiments described herein provide ampoule assemblies to contain, store, or dispense chemical precursors. In one embodiment, an ampoule assembly is provided which includes an ampoule containing a first material layer disposed on the outside of the ampoule and a second material layer disposed over the first material layer, wherein the first material layer is thermally more conductive than the second material layer, an inlet line in fluid communication with the ampoule and containing a first manual shut-off valve disposed therein, an outlet line in fluid communication with the ampoule and containing a second manual shut-off valve disposed therein, and a first bypass line connected between the inlet line and the outlet line. In some embodiments, the ampoule assembly may contain disconnect fittings. In other embodiments, the first bypass line has a shut-off valve disposed therein to fluidly couple or decouple the inlet line and the outlet line.
摘要翻译：本文所述的实施方案提供用于容纳，储存或分配化学前体的安瓿组件。在一个实施例中，提供安瓿组件，其包括安瓿，其包含设置在安瓿的外侧上的第一材料层和设置在第一材料层上的第二材料层，其中第一材料层比第二材料热导热层，与安瓿流体连通并且容纳设置在其中的第一手动截止阀的入口管线，与安瓿流体连通并且容纳设置在其中的第二手动截止阀的出口管线和连接的第一旁路管线在入口管线和出口管线之间。在一些实施例中，安瓿组件可以包含断开配件。在其他实施例中，第一旁路管线具有设置在其中的截止阀，以使入口管线和出口管线流体耦合或解耦。

9. 发明申请

US20090269507A1 SELECTIVE COBALT DEPOSITION ON COPPER SURFACES 审中-公开
标题翻译：选择性钴沉积铜表面
公开(公告)号：US20090269507A1
公开(公告)日：2009-10-29
申请号：US12111921
申请日：2008-04-29
申请人： Sang-Ho Yu , Kevin Moraes , Seshadri Ganguli , Hua Chung , See-Eng Phan
发明人： Sang-Ho Yu , Kevin Moraes , Seshadri Ganguli , Hua Chung , See-Eng Phan
IPC分类号： B05D3/04 , B05D5/12 , C23C16/44
CPC分类号： C23C16/16 , C23C16/0218 , C23C16/18 , H01L21/02068 , H01L21/02074 , H01L21/2855 , H01L21/28556 , H01L21/28562 , H01L21/324 , H01L21/76849 , H01L21/7685 , H01L21/76862 , H01L21/76883
摘要： Embodiments of the invention provide processes to selectively form a cobalt layer on a copper surface over exposed dielectric surfaces. In one embodiment, a method for capping a copper surface on a substrate is provided which includes positioning a substrate within a processing chamber, wherein the substrate contains a contaminated copper surface and a dielectric surface, exposing the contaminated copper surface to a reducing agent while forming a copper surface during a pre-treatment process, exposing the substrate to a cobalt precursor gas to selectively form a cobalt capping layer over the copper surface while leaving exposed the dielectric surface during a vapor deposition process, and depositing a dielectric barrier layer over the cobalt capping layer and the dielectric surface. In another embodiment, a deposition-treatment cycle includes performing the vapor deposition process and subsequently a post-treatment process, which deposition-treatment cycle may be repeated to form multiple cobalt capping layers.
摘要翻译：本发明的实施方案提供了在暴露的电介质表面上在铜表面上选择性地形成钴层的方法。在一个实施例中，提供了一种用于封盖衬底上的铜表面的方法，其包括将衬底定位在处理室内，其中衬底含有受污染的铜表面和电介质表面，将形成的污染的铜表面暴露于还原剂在预处理过程中的铜表面，将基底暴露于钴前体气体，以在铜表面上选择性地形成钴覆盖层，同时在气相沉积工艺期间暴露介电表面，并且在钴上沉积介电阻挡层覆盖层和电介质表面。在另一个实施方案中，沉积处理循环包括进行气相沉积工艺和随后的后处理工艺，该沉积处理循环可以重复以形成多个钴覆盖层。

10. 发明授权

US07597758B2 Chemical precursor ampoule for vapor deposition processes 有权
标题翻译：用于气相沉积工艺的化学前体安瓿瓶
公开(公告)号：US07597758B2
公开(公告)日：2009-10-06
申请号：US11849125
申请日：2007-08-31
申请人： Ling Chen , Vincent W. Ku , Hua Chung , Christophe Marcadal , Seshadri Ganguli , Jenny Lin , Dien-Yeh Wu , Alan Ouye , Mei Chang
发明人： Ling Chen , Vincent W. Ku , Hua Chung , Christophe Marcadal , Seshadri Ganguli , Jenny Lin , Dien-Yeh Wu , Alan Ouye , Mei Chang
IPC分类号： C30B23/08
CPC分类号： C23C16/45544 , C23C16/18 , C23C16/34 , C23C16/4402 , C23C16/4481 , C23C16/4482 , C23C16/4487 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： Embodiments of the invention provide chemical precursor ampoules that may be used during vapor deposition processes. In one embodiment, an apparatus for generating a chemical precursor gas used in a vapor deposition processing system is provided which includes a canister having a sidewall, a top, and a bottom forming an interior volume and a solid precursor material at least partially contained within a lower region of the interior volume. The apparatus further contains an inlet port and an outlet port in fluid communication with the interior volume and an inlet tube connected to the inlet port and positioned to direct a carrier gas towards the sidewall and away form the outlet port. In one example, the solid precursor contains pentakis(dimethylamido) tantalum (PDMAT). In another example, the apparatus contains a plurality of baffles that form an extended mean flow path between the inlet port and the outlet port.
摘要翻译：本发明的实施方案提供可在气相沉积工艺期间使用的化学前体安瓿。在一个实施例中，提供了一种用于产生在气相沉积处理系统中使用的化学前体气体的装置，其包括具有侧壁，顶部和形成内部容积的底部的罐，以及固体前体材料，其至少部分地包含在内部体积的较低区域。该装置还包括与内部空间流体连通的入口端口和出口端口，以及连接到入口端口的入口管，并且定位成将载气朝向侧壁引导并从出口端口移开。在一个实例中，固体前体含有五（二甲基氨基）钽（PDMAT）。在另一示例中，该装置包含多个挡板，其在入口和出口之间形成延伸的平均流动路径。

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