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41. 发明申请

US20110034039A1 FORMATION OF SILICON OXIDE USING NON-CARBON FLOWABLE CVD PROCESSES 有权
标题翻译：使用非碳化硅气相沉积法制备氧化硅
公开(公告)号：US20110034039A1
公开(公告)日：2011-02-10
申请号：US12840768
申请日：2010-07-21
申请人： Jingmei Liang , Nitin K. Ingle , Shankar Venkataraman
发明人： Jingmei Liang , Nitin K. Ingle , Shankar Venkataraman
IPC分类号： H01L21/316
CPC分类号： H01L21/762 , C23C16/401 , C23C16/452 , C23C16/56 , H01L21/02164 , H01L21/0217 , H01L21/02274 , H01L21/02304 , H01L21/02326 , H01L21/02362 , H01L21/31608 , H01L21/3185 , H01L21/76837
摘要： A method of forming a silicon oxide layer is described. The method may include the steps of mixing a carbon-free silicon-and-nitrogen containing precursor with a radical precursor, and depositing a silicon-and-nitrogen containing layer on a substrate. The silicon-and-nitrogen containing layer is then converted to the silicon oxide layer.
摘要翻译：描述形成氧化硅层的方法。该方法可以包括以下步骤：将含碳和氮的无碳前体与自由基前体混合，并在衬底上沉积含硅和氮的层。然后将含氮和氮的层转化为氧化硅层。

42. 发明申请

US20110034035A1 STRESS MANAGEMENT FOR TENSILE FILMS 有权
标题翻译：拉伸片的应力管理
公开(公告)号：US20110034035A1
公开(公告)日：2011-02-10
申请号：US12604332
申请日：2009-10-22
申请人： Jingmei Liang , Anjana M. Patel , Nitin K. Ingle , Shankar Venkataraman
发明人： Jingmei Liang , Anjana M. Patel , Nitin K. Ingle , Shankar Venkataraman
IPC分类号： H01L21/30
CPC分类号： H01L21/31608 , C23C16/401 , C23C16/452 , C23C16/56 , H01L21/02164 , H01L21/0217 , H01L21/02274 , H01L21/02304 , H01L21/02326 , H01L21/02362 , H01L21/3185 , H01L21/76829 , H01L21/76834 , H01L21/76837
摘要： The formation of a gap-filling silicon oxide layer with reduced tendency towards cracking is described. The deposition involves the formation of a flowable silicon-containing layer which facilitates the filling of trenches. Subsequent processing at high substrate temperature causes less cracking in the dielectric film than flowable films formed in accordance with methods in the prior art. A compressive liner layer deposited prior to the formation of the gap-filling silicon oxide layer is described and reduces the tendency for the subsequently deposited film to crack. A compressive capping layer deposited after a flowable silicon-containing layer has also been determined to reduce cracking. Compressive liner layers and compressive capping layers can be used alone or in combination to reduce and often eliminate cracking. Compressive capping layers in disclosed embodiments have additionally been determined to enable an underlying layer of silicon nitride to be transformed into a silicon oxide layer.
摘要翻译：描述了具有降低的开裂倾向的间隙填充氧化硅层的形成。沉积涉及形成有助于填充沟槽的可流动的含硅层。在基板温度高的情况下，与根据现有技术中的方法形成的可流动膜相比，电介质膜中的裂纹少。描述在形成间隙填充氧化硅层之前沉积的压缩衬垫层，并且降低随后沉积的膜破裂的倾向。在可流动的含硅层之后沉积的压缩覆盖层也被确定以减少开裂。压缩衬里层和压缩覆盖层可以单独使用或组合使用以减少并经常消除开裂。已经确定了所公开的实施例中的压缩覆盖层，以使氮化硅的下层能够转化为氧化硅层。

43. 发明授权

US07528051B2 Method of inducing stresses in the channel region of a transistor 失效
标题翻译：在晶体管的沟道区域中产生应力的方法
公开(公告)号：US07528051B2
公开(公告)日：2009-05-05
申请号：US10846734
申请日：2004-05-14
申请人： Reza Arghavani , Zheng Yuan , Ellie Y. Yieh , Shankar Venkataraman , Nitin K. Ingle
发明人： Reza Arghavani , Zheng Yuan , Ellie Y. Yieh , Shankar Venkataraman , Nitin K. Ingle
IPC分类号： H01L21/76
CPC分类号： H01L29/6656 , H01L21/823807 , H01L29/6659 , H01L29/7833 , H01L29/7846
摘要： A method of fabricating a semiconductor device, where the method includes forming a transistor on a substrate, where the transistor includes a channel region configured to conduct charge between a source region and a drain region, forming a trench adjacent to the transistor, depositing a material on the substrate and within the trench, and annealing the material, where the material is tensile following the annealing and creates a tensile stress in the channel region. Also, a method of forming a trench isolation in a semiconductor device, where the method includes forming a trench in a substrate, forming a material within the trench at a lower deposition rate, forming the material on the substrate at a higher deposition rate after the depositing of the material within the trench, and annealing the material, where after the annealing the material in the trench is tensile.
摘要翻译：一种制造半导体器件的方法，其中所述方法包括在衬底上形成晶体管，其中所述晶体管包括被配置为在源极区域和漏极区域之间传导电荷的沟道区域，形成与所述晶体管相邻的沟槽，在衬底上和沟槽内，并对材料进行退火，其中材料在退火之后是拉伸的，并且在沟道区域中产生拉伸应力。另外，在半导体器件中形成沟槽隔离的方法，其中所述方法包括在衬底中形成沟槽，以较低的沉积速率在沟槽内形成材料，在衬底上以更高的沉积速率在衬底上形成材料在沟槽内沉积材料并退火材料，其中在退火之后，沟槽中的材料是拉伸的。

44. 发明授权

US07459405B2 Method using TEOS ramp-up during TEOS/ozone CVD for improved gap-fill 失效
标题翻译：在TEOS /臭氧CVD期间使用TEOS上升的方法来改善间隙填充
公开(公告)号：US07459405B2
公开(公告)日：2008-12-02
申请号：US11493211
申请日：2006-07-25
申请人： Nitin K. Ingle , Xinyua Xia , Zheng Yuan
发明人： Nitin K. Ingle , Xinyua Xia , Zheng Yuan
IPC分类号： H01L21/469 , H01L21/31 , H01L21/26
CPC分类号： C23C16/45523 , C23C16/045 , C23C16/401 , C23C16/402 , C23C16/45512 , C23C16/52 , H01L21/02164 , H01L21/02271 , H01L21/02274 , H01L21/31612 , H01L21/76801 , Y10S438/958
摘要： Embodiments of the present invention provide methods, apparatuses, and devices related to chemical vapor deposition of silicon oxide. In one embodiment, a single-step deposition process is used to efficiently form a silicon oxide layer exhibiting high conformality and favorable gap-filling properties. During a pre-deposition gas flow stabilization phase and an initial deposition stage, a relatively low ratio of silicon-containing gas:oxidant deposition gas is flowed, resulting in formation of highly conformal silicon oxide at relatively slow rates. Over the course of the deposition process step, the ratio of silicon-containing gas:oxidant gas is increased, resulting in formation of less-conformal oxide material at relatively rapid rates during later stages of the deposition process step.
摘要翻译：本发明的实施例提供了与氧化硅的化学气相沉积相关的方法，装置和装置。在一个实施例中，使用单步沉积工艺来有效地形成表现出高共形性和良好间隙填充性能的氧化硅层。在预沉积气体流动稳定阶段和初始沉积阶段期间，含硅气体：氧化剂沉积气体的比例相对较低，从而以相对较慢的速率形成高度保形的氧化硅。在沉积工艺步骤的过程中，含硅气体：氧化剂气体的比率增加，导致在沉积工艺步骤的后续阶段以相对较快的速率形成较小保形的氧化物材料。

45. 发明授权

US07456116B2 Gap-fill depositions in the formation of silicon containing dielectric materials 失效
标题翻译：在形成含硅介电材料时的间隙填充沉积
公开(公告)号：US07456116B2
公开(公告)日：2008-11-25
申请号：US11018381
申请日：2004-12-20
申请人： Nitin K. Ingle , Shan Wong , Xinyun Xia , Vikash Banthia , Won B. Bang , Yen-Kun V. Wang , Zheng Yuan
发明人： Nitin K. Ingle , Shan Wong , Xinyun Xia , Vikash Banthia , Won B. Bang , Yen-Kun V. Wang , Zheng Yuan
IPC分类号： H01L21/31
CPC分类号： C23C16/45512 , C23C16/401 , C23C16/45523 , C23C16/52
摘要： A method to form a silicon oxide layer, where the method includes the step of providing a continuous flow of a silicon-containing precursor to a chamber housing a substrate, where the silicon-containing precursor is selected from TMOS, TEOS, OMTS, OMCTS, and TOMCATS. The method may also include the steps of providing a flow of an oxidizing precursor to the chamber, and causing a reaction between the silicon-containing precursor and the oxidizing precursor to form a silicon oxide layer. The method may further include varying over time a ratio of the silicon-containing precursor:oxidizing precursor flowed into the chamber to alter a rate of deposition of the silicon oxide on the substrate.
摘要翻译：一种形成氧化硅层的方法，其中该方法包括提供含硅前体连续流入容纳衬底的室的步骤，其中含硅前驱体选自TMOS，TEOS，OMTS，OMCTS，和TOMCATS。该方法还可以包括以下步骤：向室提供氧化前体流，并使含硅前体和氧化前体之间的反应形成氧化硅层。该方法可以进一步包括随着时间的推移改变硅含量的前体：氧化前体流入室中以改变氧化硅在衬底上的沉积速率。

46. 发明授权

US07431967B2 Limited thermal budget formation of PMD layers 失效
标题翻译：有限的热预算形成PMD层
公开(公告)号：US07431967B2
公开(公告)日：2008-10-07
申请号：US10757770
申请日：2004-01-14
申请人： Zheng Yuan , Shankar Venkataraman , Cary Ching , Shang Wong , Kevin Mikio Mukai , Nitin K. Ingle
发明人： Zheng Yuan , Shankar Venkataraman , Cary Ching , Shang Wong , Kevin Mikio Mukai , Nitin K. Ingle
IPC分类号： C23C16/00 , C23C14/00 , C23C16/22 , H01L21/302 , H01L21/461
CPC分类号： C23C16/401 , C23C16/45512 , C23C16/45523 , C23C16/52 , H01L21/02129 , H01L21/02164 , H01L21/022 , H01L21/02271 , H01L21/02274 , H01L21/31608 , H01L21/31625 , H01L21/76837
摘要： A method of filling a gap on a substrate includes providing flows of silicon-containing processing gas oxidizing processing gas, and phosphorous-containing processing gas to a chamber housing the substrate and depositing a first portion of a P-doped silicon oxide film as a substantially conformal layer in the gap by causing a reaction among the processing gases and varying over time a ratio of the gases. The temperature of the substrate is maintained below about 500° C. throughout deposition of the conformal layer. The method also includes depositing a second portion of the P-doped silicon oxide film as a bulk layer by maintaining the ratio of the gases substantially constant throughout deposition of the bulk layer. The temperature of the substrate is maintained below about 500° C. throughout deposition of the bulk layer.
摘要翻译：在衬底上填充间隙的方法包括提供含硅处理气体氧化处理气体和含磷处理气体的流向容纳衬底的腔室，并将P掺杂氧化硅膜的第一部分基本上通过引起处理气体之间的反应并随时间改变气体的比例，间隙中的保形层。在保形层的沉积过程中，基板的温度保持在约500℃以下。该方法还包括通过在本体层的整个沉积期间保持气体的比率基本恒定来沉积P掺杂氧化硅膜的第二部分作为本体层。在本体层的整个沉积过程中，衬底的温度保持在约500℃以下。

47. 发明授权

US07208425B2 Method using TEOS ramp-up during TEOS/ozone CVD for improved gap-fill 有权
标题翻译：在TEOS /臭氧CVD期间使用TEOS上升的方法来改善间隙填充
公开(公告)号：US07208425B2
公开(公告)日：2007-04-24
申请号：US11367866
申请日：2006-03-03
申请人： Nitin K. Ingle , Xinyua Xia , Zheng Yuan
发明人： Nitin K. Ingle , Xinyua Xia , Zheng Yuan
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C16/45523 , C23C16/045 , C23C16/401 , C23C16/402 , C23C16/45512 , C23C16/52 , H01L21/02164 , H01L21/02271 , H01L21/02274 , H01L21/31612 , H01L21/76801 , Y10S438/958
摘要： Embodiments of the present invention provide methods, apparatuses, and devices related to chemical vapor deposition of silicon oxide. In one embodiment, a single-step deposition process is used to efficiently form a silicon oxide layer exhibiting high conformality and favorable gap-filling properties. During a pre-deposition gas flow stabilization phase and an initial deposition stage, a relatively low ratio of silicon-containing gas:oxidant deposition gas is flowed, resulting in formation of highly conformal silicon oxide at relatively slow rates. Over the course of the deposition process step, the ratio of silicon-containing gas:oxidant gas is increased, resulting in formation of less-conformal oxide material at relatively rapid rates during later stages of the deposition process step.
摘要翻译：本发明的实施例提供了与氧化硅的化学气相沉积相关的方法，装置和装置。在一个实施例中，使用单步沉积工艺来有效地形成表现出高共形性和良好间隙填充性能的氧化硅层。在预沉积气体流动稳定阶段和初始沉积阶段期间，含硅气体：氧化剂沉积气体的比例相对较低，从而以相对较慢的速率形成高度保形的氧化硅。在沉积工艺步骤的过程中，含硅气体：氧化剂气体的比率增加，导致在沉积工艺步骤的后续阶段以相对较快的速率形成较小保形的氧化物材料。

48. 发明授权

US07037859B2 Method using TEOS ramp-up during TEOS/ozone CVD for improved gap-fill 有权
标题翻译：在TEOS /臭氧CVD期间使用TEOS上升的方法来改善间隙填充
公开(公告)号：US07037859B2
公开(公告)日：2006-05-02
申请号：US10979471
申请日：2004-11-01
申请人： Nitin K. Ingle , Xinyua Xia , Zheng Yuan
发明人： Nitin K. Ingle , Xinyua Xia , Zheng Yuan
IPC分类号： H01L21/31
CPC分类号： C23C16/45523 , C23C16/045 , C23C16/401 , C23C16/402 , C23C16/45512 , C23C16/52 , H01L21/02164 , H01L21/02271 , H01L21/02274 , H01L21/31612 , H01L21/76801 , Y10S438/958
摘要： Embodiments of the present invention provide methods, apparatuses, and devices related to chemical vapor deposition of silicon oxide. In one embodiment, a single-step deposition process is used to efficiently form a silicon oxide layer exhibiting high conformality and favorable gap-filling properties. During a pre-deposition gas flow stabilization phase and an initial deposition stage, a relatively low ratio of silicon-containing gas:oxidant deposition gas is flowed, resulting in formation of highly conformal silicon oxide at relatively slow rates. Over the course of the deposition process step, the ratio of silicon-containing gas:oxidant gas is increased, resulting in formation of less-conformal oxide material at relatively rapid rates during later stages of the deposition process step.
摘要翻译：本发明的实施例提供了与氧化硅的化学气相沉积相关的方法，装置和装置。在一个实施例中，使用单步沉积工艺来有效地形成表现出高共形性和良好间隙填充性能的氧化硅层。在预沉积气体流动稳定阶段和初始沉积阶段期间，含硅气体：氧化剂沉积气体的比例相对较低，从而以相对较慢的速率形成高度保形的氧化硅。在沉积工艺步骤的过程中，含硅气体：氧化剂气体的比率增加，导致在沉积工艺步骤的后续阶段以相对较快的速率形成较小保形的氧化物材料。

49. 发明授权

US08771539B2 Remotely-excited fluorine and water vapor etch 有权
标题翻译：远程激发氟和水蒸汽蚀刻
公开(公告)号：US08771539B2
公开(公告)日：2014-07-08
申请号：US13232079
申请日：2011-09-14
申请人： Jingchun Zhang , Anchuan Wang , Nitin K. Ingle
发明人： Jingchun Zhang , Anchuan Wang , Nitin K. Ingle
IPC分类号： C23F1/00 , H01L21/311 , H01J37/32 , H01L49/02
CPC分类号： H01L21/31116 , H01J37/32357 , H01L28/91
摘要： A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with water vapor. The chemical reaction resulting from the combination produces reactants which etch the patterned heterogeneous structures to produce, in embodiments, a thin residual structure exhibiting little deformation. The methods may be used to conformally trim silicon oxide while removing little or no silicon, polysilicon, silicon nitride, titanium or titanium nitride. In an exemplary embodiment, the etch processes described herein have been found to remove mold oxide around a thin cylindrical conducting structure without causing the cylindrical structure to significantly deform.
摘要翻译：描述了在图案化异质结构上蚀刻暴露的氧化硅的方法，并且包括由含氟前体形成的远程等离子体蚀刻。来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与水蒸汽结合。由组合产生的化学反应产生反应物，其蚀刻图案化的异质结构，以在实施方案中产生几乎没有变形的薄的残余结构。这些方法可以用于保守地修整氧化硅，同时去除很少或没有硅，多晶硅，氮化硅，钛或氮化钛。在示例性实施例中，已经发现本文所述的蚀刻工艺是在薄的圆柱形导电结构周围除去模制氧化物，而不会导致圆柱形结构显着变形。

50. 发明授权

US08551891B2 Remote plasma burn-in 失效
标题翻译：远程等离子体老化
公开(公告)号：US08551891B2
公开(公告)日：2013-10-08
申请号：US13527877
申请日：2012-06-20
申请人： Jingmei Liang , Lili Ji , Nitin K. Ingle
发明人： Jingmei Liang , Lili Ji , Nitin K. Ingle
IPC分类号： H01L21/31
CPC分类号： C23C16/345 , C23C16/452 , C23C16/56 , H01J37/32357 , H01J37/32862 , H01L21/02164 , H01L21/02211 , H01L21/02219 , H01L21/02274 , H01L21/02326
摘要： Methods of treating the interior of a plasma region are described. The methods include a preventative maintenance procedure or the start-up of a new substrate processing chamber having a remote plasma system. A new interior surface is exposed within the remote plasma system. The (new) interior surfaces are then treated by sequential steps of (1) forming a remote plasma from hydrogen-containing precursor within the remote plasma system and then (2) exposing the interior surfaces to water vapor. Steps (1)-(2) are repeated at least ten times to complete the burn-in process. Following the treatment of the interior surfaces, a substrate may be transferred into a substrate processing chamber. A dielectric film may then be formed on the substrate by flowing one precursor through the remote plasma source and combining the plasma effluents with a second precursor flowing directly to the substrate processing region.
摘要翻译：描述了处理等离子体区域内部的方法。这些方法包括预防性维护程序或启动具有远程等离子体系统的新基板处理室。新的内表面暴露在远程等离子体系统内。（新）内表面然后通过（1）在远程等离子体系统内从含氢前体形成远程等离子体的顺序步骤进行处理，然后（2）将内表面暴露于水蒸汽。步骤（1） - （2）重复至少十次以完成老化过程。在内表面的处理之后，可以将衬底转移到衬底处理室中。然后可以通过使一个前体流过远程等离子体源并将等离子体流出物与直接流到衬底处理区的第二前体结合在衬底上形成电介质膜。

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