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41. 发明授权

US07844722B2 Method, apparatus and program product for media identification and tracking associated user preferences 有权
标题翻译：用于介质识别和跟踪相关用户偏好的方法，设备和程序产品
公开(公告)号：US07844722B2
公开(公告)日：2010-11-30
申请号：US11445025
申请日：2006-06-01
申请人： Mark L. Woodward , E. Oliver Jones , Gene S. Fein , Christopher Harris , Steve S. Sherman , Bennie Jones , Anthony Salotto
发明人： Mark L. Woodward , E. Oliver Jones , Gene S. Fein , Christopher Harris , Steve S. Sherman , Bennie Jones , Anthony Salotto
IPC分类号： G06F15/16
CPC分类号： G06Q30/02 , G11B27/322 , H04L67/22
摘要： Collecting user preference information related to a playing media recording is accomplished by gathering descriptive information related to the playing media recording from a media player program presenting the playing media recording and determining if tags are embedded in the media recording and gathering descriptive information related to the playing media recording from the tags embedded in the playing media recording, if the tags exist. Further, determining if a table of contents exists on the media recording and gathering a table of contents for a collection containing the playing media recording by identifying the collection using a concatenation of track lengths identifier generation technique, the table of contents exists. Then assembling the descriptive information into a media recording information packet and sending the media recording information packet to a server computer, resulting in a collection of user preference information related to the playing media recording.
摘要翻译：收集与播放媒体记录相关的用户偏好信息是通过从呈现播放媒体记录的媒体播放器节目收集与播放媒体记录有关的描述性信息，并且确定标签是否被嵌入在媒体记录中并且收集与播放有关的描述信息如果标签存在，则从嵌入在播放媒体记录中的标签的媒体记录。此外，通过使用音轨长度标识符生成技术的级联来确定媒体记录上是否存在内容表并收集包含播放媒体记录的集合的内容表，存在目录。然后将描述信息组装到媒体记录信息包中，并将媒体记录信息包发送到服务器计算机，从而收集与播放媒体记录相关的用户偏好信息。

42. 发明授权

US07768092B2 Semiconductor device comprising a junction having a plurality of rings 有权
标题翻译：包括具有多个环的结的半导体器件
公开(公告)号：US07768092B2
公开(公告)日：2010-08-03
申请号：US11185106
申请日：2005-07-20
申请人： Christopher Harris , Cem Basceri
发明人： Christopher Harris , Cem Basceri
IPC分类号： H01L29/47
CPC分类号： H01L29/872 , H01L29/0619 , H01L29/1608 , H01L29/66143
摘要： A semiconductor device comprises a first layer (1) of a wide band gap semiconductor material doped according to a first conductivity type and a second layer (3) on top thereof designed to form a junction blocking current in the reverse biased state of the device at the interface to said first layer. The device comprises extension means for extending a termination of the junction laterally with respect to the lateral border (6) of the second layer. This extension means comprises a plurality of rings (16-21) in juxtaposition laterally surrounding said junction (15) and being arranged as seen in the lateral direction away from said junction alternatively a ring (16-18) of a semiconductor material of a second conductivity type opposite to that of said first layer and a ring (19-21) of a semi-insulating material.
摘要翻译：半导体器件包括根据第一导电类型掺杂的宽带隙半导体材料的第一层（1）和在其顶部上的第二层（3），其设计成在器件的反向偏压状态下形成结阻滞电流与所述第一层的接口。该装置包括用于相对于第二层的侧边缘（6）横向延伸接头终端的延伸装置。这种延伸装置包括多个并排的环（16-21），其横向围绕所述接合部（15）并且沿横向方向远离所述接头交替布置，交替地布置为第二部分的半导体材料的环（16-18）与所述第一层相反的导电类型和半绝缘材料的环（19-21）。

43. 发明授权

US07646060B2 Method and device of field effect transistor including a base shorted to a source region 有权
标题翻译：场效应晶体管的方法和装置，其包括与源极区短接的基极
公开(公告)号：US07646060B2
公开(公告)日：2010-01-12
申请号：US10570852
申请日：2003-09-05
申请人： Christopher Harris , Andrei Konstantinov
发明人： Christopher Harris , Andrei Konstantinov
IPC分类号： H01L29/94
CPC分类号： H01L29/66924 , H01L29/66068 , H01L29/66462 , H01L29/66863
摘要： Method for producing a field effect transistor having a source region (9), a drain region and a channel layer (11) interconnecting the source and drain regions, and including the step of providing a sacrificial layer (4) on part of a semiconductor material (1) whose edge is used to define the edge of an implant, such as the source region (9), in the semiconductor material (1), where the edge (4c) of the sacrificial layer (4) is subsequently used to define the edge of a gate (16).
摘要翻译：一种具有源极区域（9），漏极区域和互连源极区域的沟道层（11）的场效应晶体管的方法，包括在半导体材料的一部分上提供牺牲层（4）的步骤（1），其边缘用于限定半导体材料（1）中的诸如源极区域（9）的植入物的边缘，其中牺牲层（4）的边缘（4c）随后用于限定门（16）的边缘。

44. 发明申请

US20090206347A1 Semiconductor Device 有权
标题翻译：半导体器件
公开(公告)号：US20090206347A1
公开(公告)日：2009-08-20
申请号：US12227188
申请日：2006-05-12
申请人： Christopher Harris , Mietek Bakowski
发明人： Christopher Harris , Mietek Bakowski
IPC分类号： H01L29/12
CPC分类号： H01L29/8083 , H01L29/16 , H01L29/1602 , H01L29/2003 , H01L29/22 , H01L29/47 , H01L29/872
摘要： A unipolar semiconductor device having a drift layer (3) doped according to a first conductivity type forming a conducting path and regions (7, 8) doped according to a second conductivity type and arranged next to the drift layer, has the drift layer and the regions of a semiconductor material having an ionization energy Ei of dopants of the second conductivity type therein exceeding 0.5 eV and/or a solubility of the dopants of the second conductivity type therein being less than 1018 cm−3.
摘要翻译：具有根据形成导电路径的第一导电类型掺杂的漂移层（3）和根据第二导电类型掺杂并且布置在漂移层附近的区域（7,8）的单极半导体器件具有漂移层和具有其中第二导电类型的掺杂剂的电离能Ei的半导体材料的区域超过0.5eV和/或其中第二导电类型的掺杂剂的溶解度小于1018cm-3。

45. 发明申请

US20090072241A1 GRID-UMOSFET WITH ELECTRIC FIELD SHIELDING OF GATE OXIDE 有权
标题翻译：具有栅极氧化物电场屏蔽的栅格 - UMOSFET
公开(公告)号：US20090072241A1
公开(公告)日：2009-03-19
申请号：US11855595
申请日：2007-09-14
申请人： Christopher Harris , Andrei Konstantinov , Jan-Olov Svederg
发明人： Christopher Harris , Andrei Konstantinov , Jan-Olov Svederg
IPC分类号： H01L29/24
CPC分类号： H01L29/7827 , H01L29/0623 , H01L29/1095 , H01L29/1608 , H01L29/2003 , H01L29/41741 , H01L29/41766 , H01L29/4238 , H01L29/45 , H01L29/66068 , H01L29/66727 , H01L29/66734 , H01L29/7813
摘要： A trench metal oxide semiconductor field effect transistor or UMOSFET, includes a buried region that extends beneath the trench and beyond a corner of the trench. The buried region is tied to a source potential of the UMOSFET, and splits the potential realized across the structure. This effectively shields the electric field from the corners of the trench to reduce gate oxide stress, and resultantly improves device performance and reliability.
摘要翻译：沟槽金属氧化物半导体场效应晶体管或UMOSFET包括在沟槽下方延伸并超出沟槽的角的掩埋区域。掩埋区域与UMOSFET的源极电位相关联，并分解了跨结构实现的潜力。这有效地屏蔽来自沟槽角的电场，以减少栅极氧化物应力，从而提高器件的性能和可靠性。

46. 发明授权

US07457760B1 Programmable radio-frequency identification (RFID) postage stamps 失效
标题翻译：可编程射频识别（RFID）邮票
公开(公告)号：US07457760B1
公开(公告)日：2008-11-25
申请号：US12036563
申请日：2008-02-25
申请人： Christopher Harris , Katherine Shann , Leon Roberts , Alexandra Pickerill
发明人： Christopher Harris , Katherine Shann , Leon Roberts , Alexandra Pickerill
IPC分类号： G06Q10/00 , G06Q30/00 , G06F7/00 , G08B13/14
CPC分类号： G06Q10/00 , H01Q1/2225
摘要： A method of using digital electronic paper in the form of a reusable stamp. The user can attach a stamp without a predetermined postage to an article to be mailed. The stamp has a top layer having a visual display, middle layer having an electronics layer, and a bottom layer having an adhesive layer. The stamp is encoded such that the visual display of the stamp is altered to indicate a state of the stamp. Postage of the article is determined by a postal authority worker and payment is authorized using the unique identifier. This eliminates the need for the sender to have any personal interaction with a postal worker to ship an article and eliminating the need for the sender to estimate postal cost prior to the article being received at the postal office. Altering the adhesive layer provides safe removal of the affixed stamp which can then be reused.
摘要翻译：以可重复使用的邮票的形式使用数字电子纸的方法。用户可以将没有预定邮资的邮票附加到要邮寄的物品上。印模具有具有视觉显示的顶层，中间层具有电子层，以及具有粘合剂层的底层。邮票被编码，使得邮票的视觉显示被改变以指示邮票的状态。文章的邮费由邮政当局工作人员确定，并且使用唯一标识符授权付款。这消除了发件人需要与邮政工作者进行任何个人交互以发送文章，并且消除了发送者在邮政局收到文章之前估计邮政费用的必要性。改变粘合剂层可以安全地除去固化的印模，然后可以重复使用。

47. 发明授权

US07364988B2 Method of manufacturing gallium nitride based high-electron mobility devices 有权
标题翻译：制造氮化镓基高电子迁移率器件的方法
公开(公告)号：US07364988B2
公开(公告)日：2008-04-29
申请号：US11147342
申请日：2005-06-08
申请人： Christopher Harris , Thomas Gehrke , T. Warren Weeks, Jr. , Cem Basceri
发明人： Christopher Harris , Thomas Gehrke , T. Warren Weeks, Jr. , Cem Basceri
IPC分类号： H01L21/20
CPC分类号： H01L29/7783 , H01L29/2003
摘要： A method of manufacturing a heterojunction device includes forming a first layer of p-type aluminum gallium nitride; forming a second layer of undoped gallium nitride on the first layer; and forming a third layer of aluminum gallium nitride on the second layer, to provide an electron gas between the second and third layers. A heterojunction between the first and second layers injects positive charge into the second layer to compensate and/or neutralize negative charge within the electron gas.
摘要翻译：异质结装置的制造方法包括：形成第一层p型氮化镓铝; 在第一层上形成第二层未掺杂的氮化镓层; 以及在所述第二层上形成第三氮化镓层，以在所述第二层和所述第三层之间提供电子气。第一和第二层之间的异质结将正电荷注入第二层以补偿和/或中和电子气中的负电荷。

48. 发明授权

US07355223B2 Vertical junction field effect transistor having an epitaxial gate 有权
标题翻译：具有外延栅的垂直结型场效应晶体管
公开(公告)号：US07355223B2
公开(公告)日：2008-04-08
申请号：US11071437
申请日：2005-03-04
申请人： Christopher Harris , Andrei Konstantinov , Cem Basceri
发明人： Christopher Harris , Andrei Konstantinov , Cem Basceri
IPC分类号： H01L29/80 , H01L31/112
CPC分类号： H01L29/66909 , H01L29/1066 , H01L29/8083
摘要： A vertical junction field effect transistor includes a trench formed in an epitaxial layer. The trench surrounds a channel region of the epitaxial layer. The channel region may have a graded or uniform dopant concentration profile. An epitaxial gate structure is formed within the trench by epitaxial regrowth. The epitaxial gate structure may include separate first and second epitaxial gate layers, and may have either a graded or uniform dopant concentration profile.
摘要翻译：垂直结场效应晶体管包括形成在外延层中的沟槽。沟槽围绕外延层的沟道区。沟道区可以具有渐变或均匀的掺杂浓度分布。通过外延再生长在沟槽内形成外延栅极结构。外延栅结构可以包括单独的第一和第二外延栅层，并且可以具有渐变的或均匀的掺杂剂浓度分布。

49. 发明申请

US20070278609A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20070278609A1
公开(公告)日：2007-12-06
申请号：US11444106
申请日：2006-05-31
申请人： Christopher Harris , Cem Basceri , Kent Bertilsson
发明人： Christopher Harris , Cem Basceri , Kent Bertilsson
IPC分类号： H01L29/47 , H01L27/095
CPC分类号： H01L29/872 , H01L21/8213 , H01L27/0255 , H01L27/0814 , H01L29/0619 , H01L29/16 , H01L29/1602 , H01L29/1608 , H01L29/8611
摘要： A semiconductor device of unipolar type has Schottky-contacts (6) laterally separated by regions in the form of additional layers (7, 7″) of semiconductor material on top of a drift layer (3). Said additional layers being doped according to a conductivity type being opposite to the one of the drift layer. At least one (7″) of the additional layers has a substantially larger lateral extension and thereby larger area of the interface to the drift layer than adjacent such layers (7) for facilitating the building-up of a sufficient voltage between that layer and the drift layer for injecting minority charge carriers into the drift layer upon surge for surge protection.
摘要翻译：单极型的半导体器件具有由漂移层（3）顶部上的半导体材料的附加层（7,7“）形式的区域横向分开的肖特基触点（6）。所述附加层根据与漂移层中的一个相反的导电类型被掺杂。附加层的至少一个（7“）具有基本上更大的横向延伸，从而与相邻的这些层（7）相比，漂移层的界面的面积更大，以便于在该层与层之间建立足够的电压用于在浪涌保护的浪涌时将少数电荷载流子注入到漂移层中的漂移层。

50. 发明申请

US20060281284A1 Method of manufacturing gallium nitride based high-electron mobility devices 有权
标题翻译：制造氮化镓基高电子迁移率器件的方法
公开(公告)号：US20060281284A1
公开(公告)日：2006-12-14
申请号：US11147342
申请日：2005-06-08
申请人： Christopher Harris , Thomas Gehrke , T. Weeks , Cem Basceri
发明人： Christopher Harris , Thomas Gehrke , T. Weeks , Cem Basceri
IPC分类号： H01L21/20
CPC分类号： H01L29/7783 , H01L29/2003
摘要： A method of manufacturing a heterojunction device includes forming a first layer of p-type aluminum gallium nitride; forming a second layer of undoped gallium nitride on the first layer; and forming a third layer of aluminum gallium nitride on the second layer, to provide an electron gas between the second and third layers. A heterojunction between the first and second layers injects positive charge into the second layer to compensate and/or neutralize negative charge within the electron gas.
摘要翻译：异质结装置的制造方法包括：形成第一层p型氮化镓铝; 在第一层上形成第二层未掺杂的氮化镓层; 以及在所述第二层上形成第三氮化镓层，以在所述第二层和所述第三层之间提供电子气。第一和第二层之间的异质结将正电荷注入第二层以补偿和/或中和电子气中的负电荷。

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