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41. 发明申请

US20050230350A1 In-situ dry clean chamber for front end of line fabrication 审中-公开
标题翻译：用于前端制造的原位干洗室
公开(公告)号：US20050230350A1
公开(公告)日：2005-10-20
申请号：US11063645
申请日：2005-02-22
申请人： Chien-Teh Kao , Jing-Pei Chou , Chiukin Lai , Sal Umotoy , Joel Huston , Son Trinh , Mei Chang , Xiaoxiong Yuan , Yu Chang , Xinliang Lu , Wei Wang , See-Eng Phan
发明人： Chien-Teh Kao , Jing-Pei Chou , Chiukin Lai , Sal Umotoy , Joel Huston , Son Trinh , Mei Chang , Xiaoxiong Yuan , Yu Chang , Xinliang Lu , Wei Wang , See-Eng Phan
IPC分类号： H01L21/28 , C23C16/455 , C23F1/00 , H01J37/32 , H01L21/00 , H01L21/302 , H01L21/3065 , H01L21/3205 , H01L21/8238 , H01L23/12 , H01L23/52
CPC分类号： H01L21/02104 , C23C14/022 , C23C14/50 , C23C14/541 , H01J37/32082 , H01J37/32357 , H01J37/3244 , H01J37/32522 , H01J37/32541 , H01J37/32568 , H01J37/32862 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L2924/0002 , H01L2924/00
摘要： A method and apparatus for removing native oxides from a substrate surface is provided. In one aspect, the chamber comprises a chamber body and a support assembly at least partially disposed within the chamber body and adapted to support a substrate thereon. The support assembly includes one or more fluid channels at least partially formed therein and capable of cooling the substrate. The chamber further comprises a lid assembly disposed on an upper surface of the chamber body. The lid assembly includes a first electrode and a second electrode which define a plasma cavity therebetween, wherein the second electrode is adapted to connectively heat the substrate.
摘要翻译：提供了一种从衬底表面去除天然氧化物的方法和装置。在一个方面，腔室包括室主体和至少部分地设置在腔体内并适于在其上支撑衬底的支撑组件。支撑组件包括至少部分地形成在其中并能够冷却基底的一个或多个流体通道。所述室还包括设置在所述室主体的上表面上的盖组件。盖组件包括在其间限定等离子体腔的第一电极和第二电极，其中第二电极适于连接地加热衬底。

42. 发明授权

US08268684B2 Method and apparatus for trench and via profile modification 有权
标题翻译：沟槽和通孔型材修改的方法和装置
公开(公告)号：US08268684B2
公开(公告)日：2012-09-18
申请号：US13205379
申请日：2011-08-08
申请人： Mei Chang , Chien-Teh Kao , Xinliang Lu , Zhenbin Ge
发明人： Mei Chang , Chien-Teh Kao , Xinliang Lu , Zhenbin Ge
IPC分类号： H01L21/00
CPC分类号： H01J37/3244 , H01L21/3065 , H01L21/31116 , H01L21/76843 , H01L21/76865 , H01L21/76877 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1683 , H01L2221/1063
摘要： Embodiments of the present invention generally relates to an apparatus and a method for processing semiconductor substrates. Particularly, embodiments of the present invention relates to methods and apparatus for profile modification prior to filling a structure, such as a trench or a via. One embodiment of the present invention comprises forming a sacrifice layer to pinch off a top opening of a structure by exposing the structure to an etchant. In one embodiment, the etchant is configured to remove the first material by reacting with the first material and generating a by-product, which forms the sacrifice layer.
摘要翻译：本发明的实施例一般涉及用于处理半导体衬底的装置和方法。特别地，本发明的实施例涉及用于在填充诸如沟槽或通孔之类的结构之前的轮廓修改的方法和装置。本发明的一个实施例包括通过将结构暴露于蚀刻剂来形成牺牲层以夹住结构的顶部开口。在一个实施方案中，蚀刻剂被配置为通过与第一材料反应并产生形成牺牲层的副产物来除去第一材料。

43. 发明申请

US20110151676A1 METHODS OF THIN FILM PROCESS 审中-公开
标题翻译：薄膜工艺方法
公开(公告)号：US20110151676A1
公开(公告)日：2011-06-23
申请号：US13039724
申请日：2011-03-03
申请人： Nitin K. Ingle , Jing Tang , Yi Zheng , Zheng Yuan , Zhenbin Ge , Xinliang Lu , Chien-Teh Kao , Vikash Banthia , William H. McClintock , Mei Chang
发明人： Nitin K. Ingle , Jing Tang , Yi Zheng , Zheng Yuan , Zhenbin Ge , Xinliang Lu , Chien-Teh Kao , Vikash Banthia , William H. McClintock , Mei Chang
IPC分类号： H01L21/31
CPC分类号： H01L21/67253 , H01L21/02164 , H01L21/0217 , H01L21/3105 , H01L21/31116 , H01L21/76232
摘要： A method for forming a semiconductor structure includes forming a plurality of features across a surface of a substrate, with at least one space being between two adjacent features. A first dielectric layer is formed on the features and within the at least one space. A portion of the first dielectric layer interacts with a reactant derived from a first precursor and a second precursor to form a first solid product. The first solid product is decomposed to substantially remove the portion of the first dielectric layer. A second dielectric layer is formed to substantially fill the at least one space.
摘要翻译：一种用于形成半导体结构的方法包括跨越衬底的表面形成多个特征，其中至少一个空间位于两个相邻特征之间。第一电介质层形成在特征上并且在至少一个空间内。第一介电层的一部分与衍生自第一前体和第二前体的反应物相互作用以形成第一固体产物。第一固体产物被分解以基本上除去第一介电层的部分。形成第二电介质层以基本上填充至少一个空间。

44. 发明授权

US07780793B2 Passivation layer formation by plasma clean process to reduce native oxide growth 有权
标题翻译：通过等离子体清洁工艺形成钝化层以减少自然氧化物生长
公开(公告)号：US07780793B2
公开(公告)日：2010-08-24
申请号：US11962791
申请日：2007-12-21
申请人： Haichun Yang , Xinliang Lu , Chien-Teh Kao , Mei Chang
发明人： Haichun Yang , Xinliang Lu , Chien-Teh Kao , Mei Chang
IPC分类号： B08B6/00
CPC分类号： H01L21/02068 , H01L21/31116 , H01L21/76224 , H01L29/665 , H01L29/6656 , H01L29/78
摘要： Embodiments described herein provide methods for removing native oxide surfaces on substrates while simultaneously passivating the underlying substrate surface. In one embodiment, a method is provided which includes positioning a substrate containing an oxide layer within a processing chamber, adjusting a first temperature of the substrate to about 80° C. or less, generating a cleaning plasma from a gas mixture within the processing chamber, such that the gas mixture contains ammonia and nitrogen trifluoride having an NH3/NF3 molar ratio of about 10 or greater, and condensing the cleaning plasma onto the substrate. A thin film, containing ammonium hexafluorosilicate, is formed in part, from the native oxide during a plasma clean process. The method further includes heating the substrate to a second temperature of about 100° C. or greater within the processing chamber while removing the thin film from the substrate and forming a passivation surface thereon.
摘要翻译：本文描述的实施例提供了用于去除衬底上的自然氧化物表面同时钝化下面的衬底表面的方法。在一个实施例中，提供了一种方法，其包括将包含氧化物层的衬底定位在处理室内，将衬底的第一温度调节至约80℃或更低，从处理室内的气体混合物产生清洁等离子体使得气体混合物含有NH 3 / NF 3摩尔比为约10或更大的氨和三氟化氮，并将清洗等离子体冷凝到基材上。含有六氟硅酸铵的薄膜在等离子体清洁过程中部分地由天然氧化物形成。该方法还包括在处理室内加热衬底至约100℃或更高的第二温度，同时从衬底上移除薄膜并在其上形成钝化表面。

45. 发明申请

US20100129958A1 METHOD AND APPARATUS FOR TRENCH AND VIA PROFILE MODIFICATION 有权
标题翻译：通过轮廓修改的方法和装置
公开(公告)号：US20100129958A1
公开(公告)日：2010-05-27
申请号：US12620799
申请日：2009-11-18
申请人： Mei Chang , Chien-Teh Kao , Xinliang Lu , Zhenbin Ge
发明人： Mei Chang , Chien-Teh Kao , Xinliang Lu , Zhenbin Ge
IPC分类号： H01L47/00 , H01L21/28 , H01L21/768 , H01L21/306
CPC分类号： H01J37/3244 , H01L21/3065 , H01L21/31116 , H01L21/76843 , H01L21/76865 , H01L21/76877 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1683 , H01L2221/1063
摘要： Embodiments of the present invention generally relates to an apparatus and a method for processing semiconductor substrates. Particularly, embodiments of the present invention relates to methods and apparatus for trench and via profile modification prior to filling the trench and via. One embodiment of the present invention comprises forming a sacrifice layer to pinch off a top opening of a trench structure by exposing the trench structure to an etchant. In one embodiment, the etchant is configured to remove the first material by reacting with the first material and generating a by-product, which forms the sacrifice layer.
摘要翻译：本发明的实施例一般涉及用于处理半导体衬底的装置和方法。特别地，本发明的实施例涉及在填充沟槽和通孔之前进行沟槽和通孔轮廓修改的方法和装置。本发明的一个实施例包括通过将沟槽结构暴露于蚀刻剂来形成牺牲层以压缩沟槽结构的顶部开口。在一个实施方案中，蚀刻剂被配置为通过与第一材料反应并产生形成牺牲层的副产物来除去第一材料。

46. 发明申请

US20090269934A1 PLASMA TREATMENT METHOD FOR PREVENTING DEFECTS IN DOPED SILICON OXIDE SURFACES DURING EXPOSURE TO ATMOSPHERE 失效
标题翻译：用于防止暴露于大气中的氧化铝表面缺陷的等离子体处理方法
公开(公告)号：US20090269934A1
公开(公告)日：2009-10-29
申请号：US12173331
申请日：2008-07-15
申请人： Chien-Teh Kao , Haichun Yang , Xinliang Lu , Mei Chang
发明人： Chien-Teh Kao , Haichun Yang , Xinliang Lu , Mei Chang
IPC分类号： H01L21/302
CPC分类号： H01L21/3105 , H01L21/02063 , H01L21/76814 , H01L21/76826 , H01L21/76828
摘要： Formation of BPSG surface defects upon exposure to atmosphere is prevented by a plasma treatment method for converting boron and/or phosphorus materials separated from silicon near the surface of the doped glass layer to gas phase compounds. The treatment plasma is generated from a treatment process gas containing one of (a) a fluorine compound or (b) a hydrogen compound.
摘要翻译：通过等离子体处理方法防止在暴露于大气中形成BPSG表面缺陷，用于将从掺杂玻璃层表面附近的硅分离的硼和/或磷材料转化为气相化合物。处理等离子体由含有（a）氟化合物或（b）氢化合物的处理气体产生。

47. 发明授权

US07520957B2 Lid assembly for front end of line fabrication 有权
标题翻译：用于前端线制造的盖组件
公开(公告)号：US07520957B2
公开(公告)日：2009-04-21
申请号：US11137199
申请日：2005-05-24
申请人： Chien-Teh Kao , Jing-Pei (Connie) Chou , Chiukin (Steven) Lai , Sal Umotoy , Joel M. Huston , Son Trinh , Mei Chang , Xiaoxiong (John) Yuan , Yu Chang , Xinliang Lu , Wei W. Wang , See-Eng Phan
发明人： Chien-Teh Kao , Jing-Pei (Connie) Chou , Chiukin (Steven) Lai , Sal Umotoy , Joel M. Huston , Son Trinh , Mei Chang , Xiaoxiong (John) Yuan , Yu Chang , Xinliang Lu , Wei W. Wang , See-Eng Phan
IPC分类号： H01L21/00 , C23C16/00
CPC分类号： H01L21/02104 , C23C14/022 , C23C14/50 , C23C14/541 , H01J37/32082 , H01J37/32357 , H01J37/3244 , H01J37/32522 , H01J37/32541 , H01J37/32568 , H01J37/32862 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L2924/0002 , H01L2924/00
摘要： A lid assembly for semiconductor processing is provided. In at least one embodiment, the lid assembly includes a first electrode comprising an expanding section that has a gradually increasing inner diameter. The lid assembly also includes a second electrode disposed opposite the first electrode. A plasma cavity is defined between the inner diameter of the expanding section of the first electrode and a first surface of the second electrode.
摘要翻译：提供了一种用于半导体处理的盖组件。在至少一个实施例中，盖组件包括第一电极，其包括具有逐渐增加的内径的扩张部分。盖组件还包括与第一电极相对设置的第二电极。在第一电极的扩展部分的内径和第二电极的第一表面之间限定等离子体腔。

48. 发明申请

US20080182382A1 METHODS OF THIN FILM PROCESS 有权
标题翻译：薄膜工艺方法
公开(公告)号：US20080182382A1
公开(公告)日：2008-07-31
申请号：US11947674
申请日：2007-11-29
申请人： Nitin K. Ingle , Jing Tang , Yi Zheng , Zheng Yuan , Zhenbin Ge , Xinliang Lu , Chien-Teh Kao , Vikash Banthia , William H. McClintock , Mei Chang
发明人： Nitin K. Ingle , Jing Tang , Yi Zheng , Zheng Yuan , Zhenbin Ge , Xinliang Lu , Chien-Teh Kao , Vikash Banthia , William H. McClintock , Mei Chang
IPC分类号： H01L21/762
CPC分类号： H01L21/67253 , H01L21/02164 , H01L21/0217 , H01L21/3105 , H01L21/31116 , H01L21/76232
摘要： A method for forming a semiconductor structure includes forming a plurality of features across a surface of a substrate, with at least one space being between two adjacent features. A first dielectric layer is formed on the features and within the at least one space. A portion of the first dielectric layer interacts with a reactant derived from a first precursor and a second precursor to form a first solid product. The first solid product is decomposed to substantially remove the portion of the first dielectric layer. A second dielectric layer is formed to substantially fill the at least one space.
摘要翻译：一种用于形成半导体结构的方法包括跨越衬底的表面形成多个特征，其中至少一个空间位于两个相邻特征之间。第一电介质层形成在特征上并且在至少一个空间内。第一介电层的一部分与衍生自第一前体和第二前体的反应物相互作用以形成第一固体产物。第一固体产物被分解以基本上除去第一介电层的部分。形成第二电介质层以基本上填充至少一个空间。

49. 发明授权

US07396480B2 Method for front end of line fabrication 有权
标题翻译：前端制造方法
公开(公告)号：US07396480B2
公开(公告)日：2008-07-08
申请号：US11137609
申请日：2005-05-24
申请人： Chien-Teh Kao , Jing-Pei (Connie) Chou , Chiukin (Steven) Lai , Sal Umotoy , Joel M. Huston , Son Trinh , Mei Chang , Xiaoxiong (John) Yuan , Yu Chang , Xinliang Lu , Wei W. Wang , See-Eng Phan
发明人： Chien-Teh Kao , Jing-Pei (Connie) Chou , Chiukin (Steven) Lai , Sal Umotoy , Joel M. Huston , Son Trinh , Mei Chang , Xiaoxiong (John) Yuan , Yu Chang , Xinliang Lu , Wei W. Wang , See-Eng Phan
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： H01L21/02104 , C23C14/022 , C23C14/50 , C23C14/541 , H01J37/32082 , H01J37/32357 , H01J37/3244 , H01J37/32522 , H01J37/32541 , H01J37/32568 , H01J37/32862 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L2924/0002 , H01L2924/00
摘要： A method for removing native oxides from a substrate surface is provided. In at least one embodiment, the method includes supporting the substrate surface in a vacuum chamber and generating reactive species from a gas mixture within the chamber. The substrate surface is then cooled within the chamber and the reactive species are directed to the cooled substrate surface to react with the native oxides thereon and form a film on the substrate surface. The substrate surface is then heated within the chamber to vaporize the film.
摘要翻译：提供了从衬底表面去除天然氧化物的方法。在至少一个实施例中，该方法包括将基板表面支撑在真空室中，并从室内的气体混合物产生反应物质。然后将衬底表面在腔室内冷却，并且反应物质被引导到冷却的衬底表面以与其上的天然氧化物反应并在衬底表面上形成膜。然后将衬底表面在室内加热以使膜蒸发。

50. 发明申请

US20070015360A1 Contact clean by remote plasma and repair of silicide surface 失效
标题翻译：通过远程等离子体接触清洁并修复硅化物表面
公开(公告)号：US20070015360A1
公开(公告)日：2007-01-18
申请号：US11183999
申请日：2005-07-18
申请人： Xinliang Lu , Chien-Teh Kao , Chiukin Lai , Mei Chang
发明人： Xinliang Lu , Chien-Teh Kao , Chiukin Lai , Mei Chang
IPC分类号： H01L21/44
CPC分类号： H01L21/28518 , H01L21/0206 , H01L21/02063 , H01L21/02068 , H01L21/28061 , H01L21/321 , H01L29/665 , H01L29/6659 , Y10S438/906
摘要： Method for recovering treated metal suicide surfaces or layers are provided. In at least one embodiment, a substrate having an at least partially oxidized metal suicide surface disposed thereon is cleaned to remove the oxidized regions to provide an altered metal silicide surface. The altered metal silicide surface is then exposed to one or more silicon-containing compounds at conditions sufficient to recover the metal silicide surface.
摘要翻译：提供了处理过的金属硅化物表面或层的回收方法。在至少一个实施例中，清洁具有设置在其上的至少部分氧化的金属硅化物表面的衬底以除去氧化区域以提供改变的金属硅化物表面。然后在足以回收金属硅化物表面的条件下将改变的金属硅化物表面暴露于一种或多种含硅化合物。

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