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1. 发明授权

US08846163B2 Method for removing oxides 有权
标题翻译：去除氧化物的方法
公开(公告)号：US08846163B2
公开(公告)日：2014-09-30
申请号：US13489137
申请日：2012-06-05
申请人： Chien-Teh Kao , Jing-Pei (Connie) Chou , Chiukin (Steven) Lai , Sal Umotoy , Joel M. Huston , Son Trinh , Mei Chang , Xiaoxiong (John) Yuan , Yu Chang , Xinliang Lu , Wei W. Wang , See-Eng Phan
发明人： Chien-Teh Kao , Jing-Pei (Connie) Chou , Chiukin (Steven) Lai , Sal Umotoy , Joel M. Huston , Son Trinh , Mei Chang , Xiaoxiong (John) Yuan , Yu Chang , Xinliang Lu , Wei W. Wang , See-Eng Phan
IPC分类号： B05D3/06 , H05B3/00 , C23C16/00 , H01J37/32 , H01L21/67 , H01L21/02
CPC分类号： H01L21/02104 , C23C14/022 , C23C14/50 , C23C14/541 , H01J37/32082 , H01J37/32357 , H01J37/3244 , H01J37/32522 , H01J37/32541 , H01J37/32568 , H01J37/32862 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L2924/0002 , H01L2924/00
摘要： A method for removing native oxides from a substrate surface is provided. In one embodiment, the method comprises positioning a substrate having an oxide layer into a processing chamber, exposing the substrate to a gas mixture while forming a volatile film on the substrate and maintaining the substrate at a temperature below 65° C., heating the substrate to a temperature of at least about 75° C. to sublimate the volatile film and remove the oxide layer, and depositing a first layer on the substrate after heating the substrate.
摘要翻译：提供了从衬底表面去除天然氧化物的方法。在一个实施例中，该方法包括将具有氧化物层的衬底定位到处理室中，将衬底暴露于气体混合物，同时在衬底上形成挥发性膜并将衬底保持在低于65℃的温度下，加热衬底达到至少约75℃的温度以使挥发性膜升华并去除氧化物层，并且在加热基材之后在基板上沉积第一层。

2. 发明授权

US08563424B2 Process for forming cobalt and cobalt silicide materials in tungsten contact applications 失效
标题翻译：在钨接触应用中形成钴和钴硅化物材料的方法
公开(公告)号：US08563424B2
公开(公告)日：2013-10-22
申请号：US13456904
申请日：2012-04-26
申请人： Seshadri Ganguli , Sang-Ho Yu , See-Eng Phan , Mei Chang , Amit Khandelwal , Hyoung-Chan Ha
发明人： Seshadri Ganguli , Sang-Ho Yu , See-Eng Phan , Mei Chang , Amit Khandelwal , Hyoung-Chan Ha
IPC分类号： H01L21/4763 , H01L21/44
CPC分类号： C23C16/18 , C23C16/42 , C23C16/45523 , C23C16/56 , H01L21/0206 , H01L21/02063 , H01L21/28518 , H01L21/2855 , H01L21/28556 , H01L21/28562 , H01L21/67207 , H01L21/68785 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L29/665 , H01L29/78
摘要： Methods for forming cobalt silicide are provided. One method for forming a cobalt silicide material includes exposing a substrate having a silicon-containing material to either a wet etch solution or a pre-clean plasma during a first step and then to a hydrogen plasma during a second step of a pre-clean process. The method further includes depositing a cobalt metal layer on the silicon-containing material by a CVD process, heating the substrate to form a first cobalt silicide layer comprising CoSi at the interface of the cobalt metal layer and the silicon-containing material during a first annealing process, removing any unreacted cobalt metal from the substrate during an etch process, and heating the substrate to form a second cobalt silicide layer comprising CoSi2 during a second annealing process.
摘要翻译：提供了形成硅化钴的方法。用于形成硅化钴材料的一种方法包括在第一步骤期间将具有含硅材料的衬底暴露于湿蚀刻溶液或预清洁等离子体，然后在预清洁过程的第二步骤期间暴露于氢等离子体。该方法还包括通过CVD工艺在含硅材料上沉积钴金属层，加热衬底以在第一退火期间在钴金属层和含硅材料的界面处形成包含CoSi的第一钴硅化物层在蚀刻过程中从衬底去除任何未反应的钴金属，以及在第二退火过程中加热衬底以形成包含CoSi 2的第二钴硅化物层。

3. 发明申请

US20120122320A1 Method Of Processing Low K Dielectric Films 审中-公开
标题翻译：低K电介质膜的处理方法
公开(公告)号：US20120122320A1
公开(公告)日：2012-05-17
申请号：US13296401
申请日：2011-11-15
申请人： Annamalai Lakshmanan , Zhenjiang Cui , Mehul Naik , See-Eng Phan , Jennifer Shan , Paul F. Ma
发明人： Annamalai Lakshmanan , Zhenjiang Cui , Mehul Naik , See-Eng Phan , Jennifer Shan , Paul F. Ma
IPC分类号： H01L21/318 , H01L21/31
CPC分类号： H01L21/3105 , C23C16/56 , H01L21/02126 , H01L21/76826 , H01L21/76843
摘要： Provided are methods for re-incorporating carbon into low-k films after processes which result in depletion of carbon from the films. Additionally, methods for replenished depleted carbon and capping with tantalum nitride are also described.
摘要翻译：提供的方法是在导致碳从膜中耗尽的过程之后将碳重新并入低k膜中的方法。此外，还描述了补充耗尽碳和用氮化钽封盖的方法。

4. 发明申请

US20110223755A1 METHOD FOR REMOVING OXIDES 审中-公开
标题翻译：去除氧化物的方法
公开(公告)号：US20110223755A1
公开(公告)日：2011-09-15
申请号：US13112875
申请日：2011-05-20
申请人： CHIEN-TEH KAO , Jing-Pei(Connie) Chou , Chiukin(Steven) Lai , Sal Umotoy , Joel M. Huston , Son Trinh , Mei Chang , Xiaoxiong (John) Yuan , Yu Chang , Xinliang Lu , Wei W. Wang , See-Eng Phan
发明人： CHIEN-TEH KAO , Jing-Pei(Connie) Chou , Chiukin(Steven) Lai , Sal Umotoy , Joel M. Huston , Son Trinh , Mei Chang , Xiaoxiong (John) Yuan , Yu Chang , Xinliang Lu , Wei W. Wang , See-Eng Phan
IPC分类号： H01L21/28
CPC分类号： H01L21/02104 , C23C14/022 , C23C14/50 , C23C14/541 , H01J37/32082 , H01J37/32357 , H01J37/3244 , H01J37/32522 , H01J37/32541 , H01J37/32568 , H01J37/32862 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L2924/0002 , H01L2924/00
摘要： A method for removing native oxides from a substrate surface is provided. In one embodiment, the method comprises positioning a substrate having an oxide layer into a processing chamber, generating a plasma of a reactive species from a gas mixture within the processing chamber, exposing the substrate to the reactive species while forming a volatile film on the substrate and maintaining the substrate at a temperature below 65° C., heating the substrate to a temperature of at least about 75° C. to vaporize the volatile film and remove the oxide layer, and depositing a first layer on the substrate after heating the substrate.
摘要翻译：提供了从衬底表面去除天然氧化物的方法。在一个实施例中，该方法包括将具有氧化物层的衬底定位到处理室中，从处理室内的气体混合物产生反应物质的等离子体，将衬底暴露于反应性物质，同时在衬底上形成挥发性膜并将衬底保持在低于65℃的温度下，将衬底加热到至少约75℃的温度以蒸发挥发性膜并去除氧化物层，并且在加热衬底之后在衬底上沉积第一层。

5. 发明授权

US07767024B2 Method for front end of line fabrication 有权
标题翻译：前端制造方法
公开(公告)号：US07767024B2
公开(公告)日：2010-08-03
申请号：US12134715
申请日：2008-06-06
申请人： Chien-Teh Kao , Jing-Pei (Connie) Chou , Chiukin (Steven) Lai , Sal Umotoy , Joel M. Huston , Son Trinh , Mei Chang , Xiaoxiong (John) Yuan , Yu Chang , Xinliang Lu , Wei W. Wang , See-Eng Phan
发明人： Chien-Teh Kao , Jing-Pei (Connie) Chou , Chiukin (Steven) Lai , Sal Umotoy , Joel M. Huston , Son Trinh , Mei Chang , Xiaoxiong (John) Yuan , Yu Chang , Xinliang Lu , Wei W. Wang , See-Eng Phan
IPC分类号： H01L21/302
CPC分类号： H01L21/02104 , C23C14/022 , C23C14/50 , C23C14/541 , H01J37/32082 , H01J37/32357 , H01J37/3244 , H01J37/32522 , H01J37/32541 , H01J37/32568 , H01J37/32862 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L2924/0002 , H01L2924/00
摘要： In one embodiment, a method for removing native oxides from a substrate surface is provided which includes supporting a substrate containing silicon oxide within a processing chamber, generating a plasma of reactive species from a gas mixture within the processing chamber, cooling the substrate to a first temperature of less than about 65° C. within the processing chamber, and directing the reactive species to the cooled substrate to react with the silicon oxide thereon while forming a film on the substrate. The film usually contains ammonium hexafluorosilicate. The method further provides positioning the substrate in close proximity to a gas distribution plate, and heating the substrate to a second temperature of about 100° C. or greater within the processing chamber to sublimate or remove the film. The gas mixture may contain ammonia, nitrogen trifluoride, and a carrier gas.
摘要翻译：在一个实施例中，提供了从衬底表面去除天然氧化物的方法，其包括在处理室内支撑含有氧化硅的衬底，从处理室内的气体混合物产生反应物质的等离子体，将衬底冷却至第一在处理室内温度小于约65℃，并且将反应性物质引导到冷却的基底以与其上的氧化硅反应，同时在基底上形成膜。该膜通常含有六氟硅酸铵。该方法进一步提供将衬底定位在紧邻气体分配板的位置，并将衬底加热至处理室内约100℃或更高的第二温度以升华或去除膜。气体混合物可以含有氨，三氟化氮和载气。

6. 发明授权

US07513971B2 Flat style coil for improved precision etch uniformity 有权
标题翻译：扁平型线圈，可提高精密蚀刻均匀性
公开(公告)号：US07513971B2
公开(公告)日：2009-04-07
申请号：US10387948
申请日：2003-03-12
申请人： Karl Brown , Vineet Mehta , See-Eng Phan
发明人： Karl Brown , Vineet Mehta , See-Eng Phan
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： H01J37/321
摘要： An RF coil for a plasma etch chamber is provided in which the RF coil is substantially flat over a portion of at least one turn of the coil. In one embodiment, each turn of the coil is substantially flat over a majority of each turn. In one embodiment of the present inventions, each turn of the coil is substantially flat over approximately 300 degrees of the turn. In the final approximate 60 degrees of the turn, the coil is sloped down to the next turn. Each turn thus comprises a substantially flat portion in combination with a sloped portion interconnecting the turn to the next adjacent turn. In one embodiment, the RF coil having turns with substantially flat portions is generally cylindrical. Other shapes are contemplated such as a dome shape. In some applications such as an RF plasma etch reactor, it is believed that providing an RF coil having turns comprising flat portions with sloped portions interconnecting the flat portions can improve uniformity of the etch process.
摘要翻译：提供了一种用于等离子体蚀刻室的RF线圈，其中RF线圈在线圈的至少一圈的一部分上基本上是平坦的。在一个实施例中，线圈的每个匝在每匝的大部分上基本平坦。在本发明的一个实施例中，线圈的每一圈在转弯的大约300度处基本平坦。在最终大约60度的转弯中，线圈向下倾斜到下一回合。因此，每个转弯包括基本平坦的部分，与将转弯相互连接到下一个相邻转弯的倾斜部分组合。在一个实施例中，具有基本平坦部分的匝的RF线圈通常为圆柱形。可以想到其它形状，例如圆顶形状。在诸如RF等离子体蚀刻反应器的一些应用中，据信提供具有包括平坦部分的匝的RF线圈，其具有互连平坦部分的倾斜部分可以提高蚀刻工艺的均匀性。

7. 发明授权

US07252737B2 Pedestal with integral shield 有权
标题翻译：带整体护罩的基座
公开(公告)号：US07252737B2
公开(公告)日：2007-08-07
申请号：US10819891
申请日：2004-04-06
申请人： Karl Brown , Vineet Mehta , See-Eng Phan , Semyon Sherstinsky , Allen Lau
发明人： Karl Brown , Vineet Mehta , See-Eng Phan , Semyon Sherstinsky , Allen Lau
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01L21/67069 , H01J37/321 , H01J37/32623
摘要： Generally, a substrate support member for supporting a substrate is provided. In one embodiment, a substrate support member for supporting a substrate includes a body coupled to a lower shield. The body has an upper surface adapted to support the substrate and a lower surface. The lower shield has a center portion and a lip. The lip is disposed radially outward of the body and projects towards a plane defined by the first surface. The lip is disposed in a spaced-apart relation from the body. The lower shield is adapted to interface with an upper shield disposed in a processing chamber to define a labyrinth gap that substantially prevents plasma from migrating below the member. The lower shield, in another embodiment, provides the plasma with a short RF ground return path.
摘要翻译：通常，提供了用于支撑衬底的衬底支撑构件。在一个实施例中，用于支撑衬底的衬底支撑构件包括联接到下屏蔽的主体。主体具有适于支撑基板和下表面的上表面。下屏蔽件具有中心部分和唇部。唇缘设置在身体的径向外侧并朝向由第一表面限定的平面突出。唇缘与身体间隔开设置。下屏蔽适于与设置在处理室中的上屏蔽接口以限定基本上防止等离子体迁移到构件下方的迷宫间隙。在另一个实施例中，下屏蔽为等离子体提供短的RF接地返回路径。

8. 发明申请

US20050221552A1 Substrate support for in-situ dry clean chamber for front end of line fabrication 审中-公开
标题翻译：用于前端线制造的原位干洗室的基板支撑
公开(公告)号：US20050221552A1
公开(公告)日：2005-10-06
申请号：US11137090
申请日：2005-05-24
申请人： Chien-Teh Kao , Jing-Pei (Connie) Chou , Chiukin (Steven) Lai , Sal Umotoy , Joel Huston , Son Trinh , Mei Chang , Xiaoxiong (John) Yuan , Yu Chang , Xinliang Lu , Wei Wang , See-Eng Phan
发明人： Chien-Teh Kao , Jing-Pei (Connie) Chou , Chiukin (Steven) Lai , Sal Umotoy , Joel Huston , Son Trinh , Mei Chang , Xiaoxiong (John) Yuan , Yu Chang , Xinliang Lu , Wei Wang , See-Eng Phan
IPC分类号： H01L21/28 , C23C16/455 , C23F1/00 , H01J37/32 , H01L21/00 , H01L21/302 , H01L21/3065 , H01L21/3205 , H01L21/8238 , H01L23/12 , H01L23/52
CPC分类号： H01L21/02104 , C23C14/022 , C23C14/50 , C23C14/541 , H01J37/32082 , H01J37/32357 , H01J37/3244 , H01J37/32522 , H01J37/32541 , H01J37/32568 , H01J37/32862 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L2924/0002 , H01L2924/00
摘要： A substrate support assembly and method for supporting a substrate are provided. In at least one embodiment, the support assembly includes a body having one or more fluid conduits disposed therethrough, and a support member disposed on a first end of the body. The support member includes one or more fluid channels formed in an upper surface thereof, wherein each fluid channel is in communication with the one or more of the fluid conduits. The support assembly also includes a cooling medium source in fluid communication with the one or more fluid conduits, and a first electrode having a plurality of holes formed therethrough. The first electrode is disposed on the upper surface of the support member such that each of the plurality of holes is in fluid communication with at least one of the one or more fluid channels formed in the upper surface of the support member.
摘要翻译：提供了一种用于支撑衬底的衬底支撑组件和方法。在至少一个实施例中，支撑组件包括具有设置在其中的一个或多个流体导管的主体和设置在主体的第一端上的支撑构件。支撑构件包括形成在其上表面中的一个或多个流体通道，其中每个流体通道与一个或多个流体导管连通。支撑组件还包括与一个或多个流体导管流体连通的冷却介质源，以及具有穿过其形成的多个孔的第一电极。第一电极设置在支撑构件的上表面上，使得多个孔中的每一个与形成在支撑构件的上表面中的一个或多个流体通道中的至少一个流体连通。

9. 发明申请

US20120214303A1 PROCESS FOR FORMING COBALT AND COBALT SILICIDE MATERIALS IN TUNGSTEN CONTACT APPLICATIONS 失效
标题翻译：用于形成钴和钴硅酸盐材料的方法在TUNGSTEN联系应用中
公开(公告)号：US20120214303A1
公开(公告)日：2012-08-23
申请号：US13456904
申请日：2012-04-26
申请人： SESHADRI GANGULI , Sang-Ho Yu , See-Eng Phan , Mei Chang , Amit Khandelwal , Hyoung-Chan Ha
发明人： SESHADRI GANGULI , Sang-Ho Yu , See-Eng Phan , Mei Chang , Amit Khandelwal , Hyoung-Chan Ha
IPC分类号： H01L21/3205
CPC分类号： C23C16/18 , C23C16/42 , C23C16/45523 , C23C16/56 , H01L21/0206 , H01L21/02063 , H01L21/28518 , H01L21/2855 , H01L21/28556 , H01L21/28562 , H01L21/67207 , H01L21/68785 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L29/665 , H01L29/78
摘要： Embodiments of the invention generally provide methods for forming cobalt silicide. In one embodiment, a method for forming a cobalt silicide material includes exposing a substrate having a silicon-containing material to either a wet etch solution or a pre-clean plasma during a first step and then to a hydrogen plasma during a second step of a pre-clean process. The method further includes depositing a cobalt metal layer on the silicon-containing material by a CVD process, heating the substrate to form a first cobalt silicide layer comprising CoSi at the interface of the cobalt metal layer and the silicon-containing material during a first annealing process, removing any unreacted cobalt metal from the substrate during an etch process, and heating the substrate to form a second cobalt silicide layer comprising CoSi2 during a second annealing process.
摘要翻译：本发明的实施方案通常提供形成硅化钴的方法。在一个实施例中，用于形成钴硅化物材料的方法包括在第一步骤期间将具有含硅材料的衬底暴露于湿蚀刻溶液或预清洁等离子体中，然后在第二步骤期间暴露于氢等离子体预清洁过程。该方法还包括通过CVD工艺在含硅材料上沉积钴金属层，加热衬底以在第一退火期间在钴金属层和含硅材料的界面处形成包含CoSi的第一钴硅化物层在蚀刻过程中从衬底去除任何未反应的钴金属，以及在第二退火过程中加热衬底以形成包含CoSi 2的第二钴硅化物层。

10. 发明授权

US08187970B2 Process for forming cobalt and cobalt silicide materials in tungsten contact applications 有权
标题翻译：在钨接触应用中形成钴和钴硅化物材料的方法
公开(公告)号：US08187970B2
公开(公告)日：2012-05-29
申请号：US12969445
申请日：2010-12-15
申请人： Seshadri Ganguli , Sang-Ho Yu , See-Eng Phan , Mei Chang , Amit Khandelwal , Hyoung-Chan Ha
发明人： Seshadri Ganguli , Sang-Ho Yu , See-Eng Phan , Mei Chang , Amit Khandelwal , Hyoung-Chan Ha
IPC分类号： H01L21/4763 , H01L21/44
CPC分类号： C23C16/18 , C23C16/42 , C23C16/45523 , C23C16/56 , H01L21/0206 , H01L21/02063 , H01L21/28518 , H01L21/2855 , H01L21/28556 , H01L21/28562 , H01L21/67207 , H01L21/68785 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L29/665 , H01L29/78
摘要： Methods for forming cobalt silicide materials are disclosed herein. In one example, a method for forming a cobalt silicide material includes exposing a substrate having a silicon-containing material to either a wet etch solution or a pre-clean plasma during a first step and then to a hydrogen plasma during a second step of a pre-clean process. The exemplary method further includes depositing a cobalt metal layer on the silicon-containing material by a CVD process, heating the substrate to form a first cobalt silicide layer comprising CoSi at the interface of the cobalt metal layer and the silicon-containing material during a first annealing process, removing any unreacted cobalt metal from the first cobalt silicide layer during an etch process, and heating the substrate to form a second cobalt silicide layer comprising CoSi2 during a second annealing process.
摘要翻译：本文公开了形成钴硅化物材料的方法。在一个实例中，用于形成钴硅化物材料的方法包括在第一步骤期间将具有含硅材料的衬底暴露于湿蚀刻溶液或预清洁等离子体中，然后在第二步骤期间暴露于氢等离子体预清洁过程。所述示例性方法还包括通过CVD工艺在所述含硅材料上沉积钴金属层，加热所述衬底以在所述钴金属层与所述含硅材料的界面处的第一钴酸钴层中形成包含CoSi的第一钴硅化物层退火工艺，在蚀刻过程期间从第一钴硅化物层去除任何未反应的钴金属，以及在第二退火工艺期间加热衬底以形成包含CoSi 2的第二钴硅化物层。

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