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51. 发明申请

US20060252212A1 Method and device 有权
标题翻译：方法和装置
公开(公告)号：US20060252212A1
公开(公告)日：2006-11-09
申请号：US10570852
申请日：2003-09-05
申请人： Christopher Harris , Andrei Konstantinov
发明人： Christopher Harris , Andrei Konstantinov
IPC分类号： H01L21/336
CPC分类号： H01L29/66924 , H01L29/66068 , H01L29/66462 , H01L29/66863
摘要： Method for producing a field effect transistor having a source region (9), a drain region and a channel layer (11) interconnecting the source and drain regions, and including the step of providing a sacrificial layer (4) on part of a semiconductor material (1) whose edge is used to define the edge of an implant, such as the source region (9), in the semiconductor material (1), where the edge (4c) of the sacrificial layer (4) is subsequently used to define the edge of a gate (16).
摘要翻译：一种具有源极区域（9），漏极区域和互连源极区域的沟道层（11）的场效应晶体管的方法，包括在半导体材料的一部分上提供牺牲层（4）的步骤（1），其边缘用于限定半导体材料（1）中的诸如源极区域（9）的植入物的边缘，其中牺牲层（4）的边缘（4c）随后用于限定门（16）的边缘。

52. 发明申请

US20060220072A1 Vertical junction field effect transistor having an epitaxial gate 有权
标题翻译：具有外延栅的垂直结型场效应晶体管
公开(公告)号：US20060220072A1
公开(公告)日：2006-10-05
申请号：US11071437
申请日：2005-03-04
申请人： Christopher Harris , Andrei Konstantinov , Cem Basceri
发明人： Christopher Harris , Andrei Konstantinov , Cem Basceri
IPC分类号： H01L29/80
CPC分类号： H01L29/66909 , H01L29/1066 , H01L29/8083
摘要： A vertical junction field effect transistor includes a trench formed in an epitaxial layer. The trench surrounds a channel region of the epitaxial layer. The channel region may have a graded or uniform dopant concentration profile. An epitaxial gate structure is formed within the trench by epitaxial regrowth. The epitaxial gate structure may include separate first and second epitaxial gate layers, and may have either a graded or uniform dopant concentration profile.
摘要翻译：垂直结场效应晶体管包括形成在外延层中的沟槽。沟槽围绕外延层的沟道区。沟道区可以具有渐变或均匀的掺杂浓度分布。通过外延再生长在沟槽内形成外延栅极结构。外延栅结构可以包括单独的第一和第二外延栅层，并且可以具有渐变的或均匀的掺杂剂浓度分布。

53. 发明授权

US07069193B2 Color visualization system 有权
标题翻译：彩色可视化系统
公开(公告)号：US07069193B2
公开(公告)日：2006-06-27
申请号：US09776260
申请日：2001-02-05
申请人： Richard David Brunt , Andrew Godfrey Ratcliff , Christopher Harris
发明人： Richard David Brunt , Andrew Godfrey Ratcliff , Christopher Harris
IPC分类号： G06F17/50
CPC分类号： G06T19/20 , G06T2219/2012
摘要： A method for producing a color recommendation for a structure or part of a structure to be painted which comprises selecting from a database containing images of structural archetypes stored on storage means of an archetype image that closely matches the structure to be painted, selecting a color or colors from a database comprising colors stored on storage means and applying the color or colors to the archetype to produce a color scheme and displaying the structure or part of the structure with the color applied.
摘要翻译：一种用于为要绘制的结构或结构的一部分生成颜色推荐的方法，包括从包含存储在与要绘制的结构紧密匹配的原型图像的存储装置上的结构原型的图像的数据库中进行选择，选择颜色或来自数据库的颜色包括存储在存储装置上的颜色并将颜色或颜色应用于原型以产生颜色方案，并且显示所施加的颜色的结构或结构的一部分。

54. 发明申请

US20050269090A1 Temperature limited heaters with thermally conductive fluid used to heat subsurface formations 失效
标题翻译：带导热流体的温度限制加热器用于加热地下地层
公开(公告)号：US20050269090A1
公开(公告)日：2005-12-08
申请号：US11112714
申请日：2005-04-22
申请人： Harold Vinegar , Christopher Harris
发明人： Harold Vinegar , Christopher Harris
IPC分类号： E21B29/00 , E21B36/04 , E21B43/00 , E21B43/12 , E21B43/24 , E21B43/30 , E21B43/38 , H05B3/10 , H05B3/14 , H05B6/10
CPC分类号： E21B36/04 , E21B43/12 , E21B43/122 , E21B43/24 , E21B43/2401 , E21B43/2405 , E21B43/38 , H05B3/141
摘要： Certain embodiments provide a system including a heater. The heater includes one or more electrical conductors. The heater is configured to generate a heat output during application of electrical current to the heater. The heater includes a ferromagnetic material. A conduit at least partially surrounds the heater. A fluid is located in a space between the heater and the conduit. The fluid has a higher thermal conductivity than air at standard temperature and pressure (STP) (0° C. and 101.325 kPa). The system is configured to provide (a) a first heat output below a selected temperature when time-varying electrical current is applied to the heater, and (b) a second heat output near or above the selected temperature when time-varying electrical current is applied to the heater.
摘要翻译：某些实施例提供包括加热器的系统。加热器包括一个或多个电导体。加热器被配置为在向加热器施加电流期间产生热量输出。加热器包括铁磁材料。导管至少部分地围绕加热器。流体位于加热器和导管之间的空间中。在标准温度和压力（STP）（0°C和101.325 kPa）下，流体的导热系数高于空气。该系统被配置为当时变电流施加到加热器时，（a）在选定温度以下的第一热输出，以及（b）当时变电流为应用于加热器。

55. 外观设计

USD490699S1 Sprayer 失效
公开(公告)号：USD490699S1
公开(公告)日：2004-06-01
申请号：US29181101
申请日：2003-05-05
申请人： Naomi Ruth Nelson , Michael James Rodber , Christopher Harris
设计人： Naomi Ruth Nelson , Michael James Rodber , Christopher Harris

56. 发明授权

US06278133B1 Field effect transistor of SiC for high temperature application, use of such a transistor and a method for production thereof 有权
标题翻译：用于高温应用的SiC的场效应晶体管，使用这种晶体管及其制造方法
公开(公告)号：US06278133B1
公开(公告)日：2001-08-21
申请号：US09298116
申请日：1999-04-23
申请人： Christopher Harris , Andrei Konstantinov , Susan Savage
发明人： Christopher Harris , Andrei Konstantinov , Susan Savage
IPC分类号： H01L310312
CPC分类号： H01L29/0847 , G01N27/4143 , H01L29/0619 , H01L29/1608 , H01L29/66068 , H01L29/7828 , H01L29/7838
摘要： A field effect transistor of SiC for high temperature application has the source region layer (4), the drain region layer (5) and the channel region layer (6, 7) vertically separated from a front surface (14), where a gate electrode (12) is arranged, for reducing the electric field at said surface in operation of the transistor and in the case of operation as a gas sensor permitting all electrodes except for the gate electrode to be protected from the atmosphere.
摘要翻译：用于高温施加的SiC的场效应晶体管具有源区域层（4），漏极区域层（5）和沟道区域层（6,7）与前表面（14）垂直分离，其中栅电极（12）被布置为用于在晶体管的操作中减小所述表面处的电场，并且在作为气体传感器的操作的情况下，允许除了栅电极之外的所有电极被保护免受大气。

57. 发明授权

US5967795A SiC semiconductor device comprising a pn junction with a voltage absorbing edge 失效
标题翻译： SiC半导体器件包括具有电压吸收边缘的pn结
公开(公告)号：US5967795A
公开(公告)日：1999-10-19
申请号：US520689
申请日：1995-08-30
申请人： Mietek Bakowsky , Bo Bijlenga , Ulf Gustafsson , Christopher Harris , Susan Savage
发明人： Mietek Bakowsky , Bo Bijlenga , Ulf Gustafsson , Christopher Harris , Susan Savage
IPC分类号： H01L29/06 , H01L29/16 , H01L29/24 , H01L29/861 , H01L21/20
CPC分类号： H01L29/1608 , H01L29/0615 , H01L29/0661 , H01L29/8611 , H01L2924/0002 , Y10S438/931
摘要： A semiconductor component comprises a pn junction in which both the p-conducting and the n-conducting layers of the pn junction are doped silicon carbide layers and the edge of at least one of the conducting layers of the pn junction exhibits a stepwise or uniformly decreasing total charge or effective surface charge density from the initial value at the defined working junction to a zero or almost zero total charge at the outermost edge of the junction following a radial direction from the central part of the junction towards its outermost edge.
摘要翻译：半导体部件包括pn结，其中pn结的p导电层和n导电层都是掺杂的碳化硅层，并且pn结的至少一个导电层的边缘呈逐步或均匀地减小总电荷或有效表面电荷密度从在限定的工作结点处的初始值到在从结点的中心部分到其最外边缘的径向方向上的结的最外边缘处的零或几乎为零的总电荷。

58. 发明授权

US5851908A Method for introduction of an impurity dopant in SiC, a semiconductor device formed by the method and a use of highly doped amorphous layer as a source for dopant diffusion into SiC 失效
标题翻译：在SiC中引入杂质掺杂剂的方法，通过该方法形成的半导体器件和使用高掺杂非晶层作为掺杂剂扩散到SiC的源
公开(公告)号：US5851908A
公开(公告)日：1998-12-22
申请号：US436488
申请日：1995-05-08
申请人： Christopher Harris , Andrei Konstantinov , Erik Janzen
发明人： Christopher Harris , Andrei Konstantinov , Erik Janzen
IPC分类号： H01L21/22 , C23C14/48 , C30B31/22 , H01L21/04 , H01L21/265 , H01L29/861
CPC分类号： C23C14/48 , C30B31/22 , H01L21/046 , Y10S438/931
摘要： A method for introduction of an impurity dopant into a semiconductor layer of SiC comprises the step of ion implantation of the dopant in the semiconductor layer at a low temperature. The ion implantation is carried out in such a way that a doped and amorphous near-surface layer is formed, and the implantation step is followed by a step of annealing the semiconductor layer at such a high temperature that the dopant diffuses into the non-implanted sub-layer of the semiconductor layer following the near-surface layer.
摘要翻译：将杂质掺杂剂引入到SiC的半导体层中的方法包括在低温下在半导体层中离子注入掺杂剂的步骤。以这样的方式进行离子注入，即形成掺杂和无定形的近表面层，并且注入步骤之后是在掺杂剂扩散到非植入的高温下退火半导体层的步骤在接近表面层之后的半导体层的子层。

59. 发明授权

US5847414A Semiconductor device having a hetero-junction between SiC and a Group 3B-nitride 失效
标题翻译：具有SiC和3B族氮化物之间的异质结的半导体器件
公开(公告)号：US5847414A
公开(公告)日：1998-12-08
申请号：US912357
申请日：1997-08-18
申请人： Christopher Harris , Andrey Konstantinov , Erik Janzen
发明人： Christopher Harris , Andrey Konstantinov , Erik Janzen
IPC分类号： H01L29/267 , H01L31/0312
CPC分类号： H01L29/267
摘要： A semiconductor device comprises two adjacent semiconductor layers of different materials forming a heterojunction therebetween. A first layer has a larger gap between the conduction band and the valence band that a second layer at the interface between the layers. The second layer is made of SiC and the first layer is made of one of at least a) AlN and b) an alloy of AlN and other Group 3B-nitride.
摘要翻译：半导体器件包括不同材料的两个相邻的半导体层，在其间形成异质结。第一层在导带和价带之间具有较大的间隙，即层之间界面处的第二层。第二层由SiC制成，第一层由至少一种AlN和b）AlN和其他3B族氮化物的合金中的一种制成。

60. 发明授权

US5831292A IGBT having a vertical channel 失效
标题翻译： IGBT具有垂直通道
公开(公告)号：US5831292A
公开(公告)日：1998-11-03
申请号：US637304
申请日：1996-04-24
申请人： Christopher Harris , Andrei Konstantinov , Erik Janzen
发明人： Christopher Harris , Andrei Konstantinov , Erik Janzen
IPC分类号： H01L29/24 , H01L29/423 , H01L29/739 , H01L29/74 , H01L31/0312 , H01L31/111
CPC分类号： H01L29/7395 , H01L29/42376 , H01L29/1608
摘要： A transistor of SiC having an insulated gate comprises a drain contact with a highly doped substrate layer formed on the drain. The substrate layer is of p-type or of n-type. For a p-type transistor, a highly doped n-type buffer layer may optionally be formed on top of the substrate layer. A low doped n-type drift layer, a highly doped p-type base layer, a highly doped n-type source region, and a source contact are then superimposed on the substrate layer. A vertical trench extends through the source region and the base layer to at least the drift layer. The trench has a wall next to these layers. A gate electrode extends vertically along the wall and at least over a vertical extension of the base layer. An insulating layer is arranged between the gate electrode and at least the base layer whereby an inversion channel is formed for electron transport from the source contact to the drain contact. An additional low doped p-type layer is arranged in the channel region laterally to the base layer, between the base layer and the insulating layer. The additional layer extends vertically over at least the base layer.
摘要翻译：具有绝缘栅极的SiC晶体管包括与形成在漏极上的高掺杂衬底层的漏极接触。衬底层是p型或n型。对于p型晶体管，高可掺杂的n型缓冲层可任选地形成在衬底层的顶部上。然后将低掺杂n型漂移层，高掺杂的p型基极层，高掺杂的n型源极区和源极接触叠加在衬底层上。垂直沟槽延伸穿过源极区域和基极层至少到漂移层。沟槽在这些层旁边有一个墙壁。栅电极沿着壁垂直延伸，并且至少在基层的垂直延伸部上延伸。绝缘层设置在栅极电极和至少基极层之间，由此形成用于从源极接触到漏极接触的电子传输的反转沟道。在沟道区域中，在基底层和绝缘层之间的基底层侧向布置有附加的低掺杂p型层。附加层至少在基层上垂直延伸。

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