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61. 发明申请

US20060046331A1 Epitaxial substrate and semiconductor element 有权
标题翻译：外延衬底和半导体元件
公开(公告)号：US20060046331A1
公开(公告)日：2006-03-02
申请号：US11219546
申请日：2005-09-01
申请人： Makoto Kiyama , Takuji Okahisa , Takashi Sakurada
发明人： Makoto Kiyama , Takuji Okahisa , Takashi Sakurada
IPC分类号： H01L21/00
CPC分类号： H01L29/7802 , H01L29/045 , H01L29/2003 , H01L29/41741 , H01L29/4238 , H01L29/861 , H01L29/872
摘要： In a Schottky diode 11, a gallium nitride support base 13 includes a first surface 13a and a second surface 13b opposite from the first surface and has a carrier concentration exceeding 1×1018 cm−3. A gallium nitride epitaxial layer 15 is disposed on the first surface 13a. An Ohmic electrode 17 is disposed on the second surface 13b. The Schottky electrode 19 is disposed on the gallium nitride epitaxial layer 15. A thickness D1 of the gallium nitride epitaxial layer 15 is at least 5 microns and no more than 1000 microns. Also, the carrier density of the gallium nitride epitaxial layer 15 is at least 1×1014 cm−3 and no more than 1×1017 cm−3.
摘要翻译：在肖特基二极管11中，氮化镓支撑基底13包括第一表面13a和与第一表面相对的第二表面13b，并且载流子浓度超过1×10 18 cm -3 。氮化镓外延层15设置在第一表面13a上。欧姆电极17设置在第二表面13b上。肖特基电极19设置在氮化镓外延层15上。氮化镓外延层15的厚度D 1至少为5微米，不大于1000微米。此外，氮化镓外延层15的载流子密度为至少1×10 14 cm -3以上且1×10 17 cm以下 > -3 。

62. 发明授权

US07943964B2 AlxGayIn1−x−yN crystal substrate, semiconductor device, and method of manufacturing the same 有权
标题翻译： AlxGayIn1-x-yN晶体基板，半导体器件及其制造方法
公开(公告)号：US07943964B2
公开(公告)日：2011-05-17
申请号：US12096986
申请日：2006-10-16
申请人： Shinsuke Fujiwara , Tomoki Uemura , Takuji Okahisa , Koji Uematsu , Manabu Okui , Muneyuki Nishioka , Shin Hashimoto
发明人： Shinsuke Fujiwara , Tomoki Uemura , Takuji Okahisa , Koji Uematsu , Manabu Okui , Muneyuki Nishioka , Shin Hashimoto
IPC分类号： H01L33/30
CPC分类号： H01L21/02658 , C30B25/02 , C30B29/403 , H01L21/02389 , H01L21/0254
摘要： An AlxGayIn1-x-yN crystal substrate of the present invention has a main plane having an area of at least 10 cm2. The main plane has an outer region located within 5 mm from an outer periphery of the main plane, and an inner region corresponding to a region other than the outer region. The inner region has a total dislocation density of at least 1×102 cm−2 and at most 1×106 cm−2. It is thereby possible to provide an AlxGayIn1-x-yN crystal substrate having a large size and a suitable dislocation density for serving as a substrate for a semiconductor device, a semiconductor device including the AlxGayIn1-x-yN crystal substrate, and a method of manufacturing the same.
摘要翻译：本发明的Al x Ga y In 1-x-y N晶体基板具有面积为至少10cm 2的主平面。主平面具有位于与主平面的外周5mm以内的外部区域和与外部区域以外的区域对应的内部区域。内部区域的总位错密度为1×102cm 2以上且1×10 6 cm -2以下。由此，可以提供具有大尺寸和合适的位错密度的Al x Ga y In 1-x-y N晶体基板，用作半导体器件的基板，包括Al x Ga y In 1-x-y N晶体基板的半导体器件，以及制造相同。

63. 发明授权

US07481881B2 Method of manufacturing GaN crystal substrate 失效
标题翻译：制造GaN晶体基板的方法
公开(公告)号：US07481881B2
公开(公告)日：2009-01-27
申请号：US10905768
申请日：2005-01-20
申请人： Takuji Okahisa
发明人： Takuji Okahisa
IPC分类号： C30B23/00 , C30B29/40
CPC分类号： C30B29/406 , C30B25/02
摘要： Affords a method of manufacturing GaN crystal substrate in which enlargement of pit size in the growing of GaN crystal is inhibited to enable GaN crystal substrate with a high substrate-acquisition rate to be produced. The method of manufacturing GaN crystal substrate includes a step of growing GaN crystal (4) by a vapor growth technique onto a growth substrate (1), the GaN-crystal-substrate manufacturing method being characterized in that in the step of growing the GaN crystal (4), pits (6) that define facet planes (5F) are formed in the crystal-growth surface, and being characterized by having the pit-size increase factor of the pits (6) be 20% or less.
摘要翻译：提供一种制造GaN晶体基板的方法，其中GaN晶体生长中的凹坑尺寸的增加被抑制，从而能够生产具有高的基板获取速率的GaN晶体基板。制造GaN晶体衬底的方法包括通过气相生长技术将GaN晶体（4）生长到生长衬底（1）上的步骤，所述GaN晶体 - 衬底制造方法的特征在于，在生长GaN晶体（4）中，在晶体生长面中形成定义面平面（5F）的凹坑（6），其特征在于，凹坑（6）的凹坑尺寸增大系数为20％以下。

64. 发明申请

US20050155544A1 Method of Manufacturing GaN Crystal Substrate 失效
标题翻译：制造GaN晶体基板的方法
公开(公告)号：US20050155544A1
公开(公告)日：2005-07-21
申请号：US10905768
申请日：2005-01-20
申请人： Takuji Okahisa
发明人： Takuji Okahisa
IPC分类号： C30B29/38 , C30B29/40 , H01L21/20 , H01L21/205 , H01L21/786 , H01L27/12 , H01L21/00 , C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： C30B29/406 , C30B25/02
摘要： Affords a method of manufacturing GaN crystal substrate in which enlargement of pit size in the growing of GaN crystal is inhibited to enable GaN crystal substrate with a high substrate-acquisition rate to be produced. The method of manufacturing GaN crystal substrate includes a step of growing GaN crystal (4) by a vapor growth technique onto a growth substrate (1), the GaN-crystal-substrate manufacturing method being characterized in that in the step of growing the GaN crystal (4), pits (6) that define facet planes (5F) are formed in the crystal-growth surface, and being characterized by having the pit-size increase factor of the pits (6) be 20% or less.
摘要翻译：提供一种制造GaN晶体基板的方法，其中GaN晶体生长中的凹坑尺寸的增加被抑制，从而能够生产具有高的基板获取速率的GaN晶体基板。制造GaN晶体衬底的方法包括通过气相生长技术将GaN晶体（4）生长到生长衬底（1）上的步骤，所述GaN晶体 - 衬底制造方法的特征在于，在生长GaN晶体（4）中，在晶体生长面中形成定义面平面（5F）的凹坑（6），其特征在于凹坑（6）的凹坑尺寸增大系数为20％以下。

65. 发明授权

US08698282B2 Group III nitride semiconductor crystal substrate and semiconductor device 有权
标题翻译： III族氮化物半导体晶体基板和半导体器件
公开(公告)号：US08698282B2
公开(公告)日：2014-04-15
申请号：US12273101
申请日：2008-11-18
申请人： Takuji Okahisa , Tomohiro Kawase , Tomoki Uemura , Muneyuki Nishioka , Satoshi Arakawa
发明人： Takuji Okahisa , Tomohiro Kawase , Tomoki Uemura , Muneyuki Nishioka , Satoshi Arakawa
IPC分类号： H01L29/20
CPC分类号： H01L29/2003 , C30B25/02 , C30B29/403
摘要： A group III nitride semiconductor crystal substrate has a diameter of at least 25 mm and not more than 160 mm. The resistivity of the group III nitride semiconductor crystal substrate is at least 1×10−4 Ω·cm and not more than 0.1 Ω·cm. The resistivity distribution in the diameter direction of the group III nitride semiconductor crystal is at least −30% and not more than 30%. The resistivity distribution in the thickness direction of the group III nitride semiconductor crystal is at least −16% and not more than 16%.
摘要翻译： III族氮化物半导体晶体基板的直径为至少25mm且不大于160mm。 III族氮化物半导体晶体基板的电阻率至少为1×10-4＆OHgr·cm，不大于0.1＆OHgr·cm。 III族氮化物半导体晶体的直径方向的电阻率分布为-30％以上且30％以下。 III族氮化物半导体晶体的厚度方向的电阻率分布为〜16％以上且16％以下。

66. 发明授权

US08097528B2 Manufacturing method of nitride substrate, nitride substrate, and nitride-based semiconductor device 失效
标题翻译：氮化物衬底，氮化物衬底和氮化物基半导体器件的制造方法
公开(公告)号：US08097528B2
公开(公告)日：2012-01-17
申请号：US12711507
申请日：2010-02-24
申请人： Takuji Okahisa , Hideaki Nakahata , Koji Uematsu
发明人： Takuji Okahisa , Hideaki Nakahata , Koji Uematsu
IPC分类号： H01L21/20
CPC分类号： H01L31/18 , C30B25/02 , C30B29/403 , H01L29/045
摘要： A manufacturing method of a nitride substrate includes the steps of: preparing a ground substrate; forming a mask on the ground substrate; placing the ground substrate in a reactor, and heating the ground substrate to a temperature of 850° C. to 1100° C. In the step of heating the ground substrate, HCl and NH3 are supplied into the reactor so that partial pressure PHCl satisfies (1.5+0.0005p) kPa≦PHCl≦(4+0.0005p) kPa and partial pressure PNH3 satisfies (15−0.0009p) kPa≦PNH3≦(26−0.0017p) kPa, whereby an AlxGayIn1-x-yN crystal (0≦x
摘要翻译：氮化物衬底的制造方法包括以下步骤：制备接地衬底; 在地基底上形成掩模; 将接地衬底放置在反应器中，并将接地衬底加热至850℃至1100℃的温度。在加热接地衬底的步骤中，将HCl和NH 3供应到反应器中，使得分压PHCl满足（ 1.5 + 0.0005p）kPa＆nlE; PHCl＆nlE;（4 + 0.0005p）kPa，分压PNH3满足（15-0.0009p）kPa＆nlE; PNH3＆nlE;（26-0.0017p）kPa，由此得到AlxGayIn1-x-yN晶体（0＆ x <1,0

67. 发明授权

US07691732B2 Manufacturing method of nitride substrate, nitride substrate, and nitride-based semiconductor device 失效
标题翻译：氮化物衬底，氮化物衬底和氮化物基半导体器件的制造方法
公开(公告)号：US07691732B2
公开(公告)日：2010-04-06
申请号：US12141266
申请日：2008-06-18
申请人： Takuji Okahisa , Hideaki Nakahata , Koji Uematsu
发明人： Takuji Okahisa , Hideaki Nakahata , Koji Uematsu
IPC分类号： H01L21/20
CPC分类号： H01L31/18 , C30B25/02 , C30B29/403 , H01L29/045
摘要： A manufacturing method of a nitride substrate includes the steps of preparing a ground substrate; forming a mask on the ground substrate; placing the ground substrate in a reactor, and heating the ground substrate to a temperature of 850° C. to 1100° C. In the step of heating the ground substrate, HCl and NH3 are supplied into the reactor so that partial pressure PHCl satisfies (1.5+0.0005 p) kPa≦PHCl≦(4+0.0005 p) kPa and partial pressure PNH3 satisfies (15−0.0009 p) kPa≦PNH3≦(26−0.0017 p) kPa, whereby an AlxGayIn1-x-yN crystal (0≦x
摘要翻译：氮化物衬底的制造方法包括准备接地衬底的步骤; 在地基底上形成掩模; 将接地衬底放置在反应器中，并将接地衬底加热至850℃至1100℃的温度。在加热接地衬底的步骤中，将HCl和NH 3供应到反应器中，使得分压PHCl满足（ 1.5 + 0.0005 p）kPa＆nlE; PHCl＆NlE;（4 + 0.0005 p）kPa，分压PNH3满足（15-0.0009 p）kPa＆nlE; PNH3＆nlE（26-0.0017 p）kPa，由此得到AlxGayIn1-x-yN晶体（0＆ x <1,0

68. 发明申请

US20090101063A1 Method of Manufacturing GaN Crystal Substrate 审中-公开
标题翻译：制造GaN晶体基板的方法
公开(公告)号：US20090101063A1
公开(公告)日：2009-04-23
申请号：US12339087
申请日：2008-12-19
申请人： Takuji Okahisa
发明人： Takuji Okahisa
IPC分类号： C30B25/00
CPC分类号： C30B29/406 , C30B25/02
摘要： Affords a method of manufacturing GaN crystal substrate in which enlargement of pit size in the growing of GaN crystal is inhibited to enable GaN crystal substrate with a high substrate-acquisition rate to be produced. The method of manufacturing GaN crystal substrate includes a step of growing GaN crystal (4) by a vapor growth technique onto a growth substrate (1), the GaN-crystal-substrate manufacturing method being characterized in that in the step of growing the GaN crystal (4), pits (6) that define facet planes (5F) are formed in the crystal-growth surface, and being characterized by having the pit-size increase factor of the pits (6) be 20% or less.
摘要翻译：提供一种制造GaN晶体基板的方法，其中GaN晶体生长中的凹坑尺寸的增加被抑制，从而能够生产具有高的基板获取速率的GaN晶体基板。制造GaN晶体衬底的方法包括通过气相生长技术将GaN晶体（4）生长到生长衬底（1）上的步骤，所述GaN晶体 - 衬底制造方法的特征在于，在生长GaN晶体（4）中，在晶体生长面中形成定义面平面（5F）的凹坑（6），其特征在于，凹坑（6）的凹坑尺寸增大系数为20％以下。

69. 发明申请

US20080217745A1 Nitride Semiconductor Wafer 审中-公开
标题翻译：氮化物半导体晶圆
公开(公告)号：US20080217745A1
公开(公告)日：2008-09-11
申请号：US12122730
申请日：2008-05-19
申请人： Michimasa Miyanaga , Koji Uematsu , Takuji Okahisa
发明人： Michimasa Miyanaga , Koji Uematsu , Takuji Okahisa
IPC分类号： H01L29/04
CPC分类号： H01L29/2003 , H01L29/045 , H01L33/16
摘要： A nitride semiconductor substrate having properties preferable for the manufacture of various nitride semiconductor devices is made available, by specifying or controlling the local variation in the off-axis angle of the principal surface of the nitride semiconductor substrate. The substrate, being misoriented, is manufactured to have an off-axis angle distribution across its principal surface such that variation Δθ in the off-axis angle is continuous within a predetermined angular range.
摘要翻译：可以通过指定或控制氮化物半导体衬底的主表面的偏轴角度的局部变化来获得具有优选用于制造各种氮化物半导体器件的性质的氮化物半导体衬底。被制成偏心的衬底在其主表面上具有偏轴角分布，使得离轴角度的变化Deltatheta在预定角度范围内是连续的。

70. 发明授权

US07390359B2 Nitride semiconductor wafer 有权
标题翻译：氮化物半导体晶圆
公开(公告)号：US07390359B2
公开(公告)日：2008-06-24
申请号：US11612481
申请日：2006-12-19
申请人： Michimasa Miyanaga , Koji Uematsu , Takuji Okahisa
发明人： Michimasa Miyanaga , Koji Uematsu , Takuji Okahisa
IPC分类号： C30B25/12
CPC分类号： H01L29/2003 , C30B29/403 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L29/045 , H01L31/184 , H01L33/16 , Y10S117/902
摘要： A nitride semiconductor substrate having properties preferable for the manufacture of various nitride semiconductor devices is made available, by specifying or controlling the local variation in the off-axis angle of the principal surface of the nitride semiconductor substrate. In a nitride semiconductor single-crystal wafer having a flat principal surface, the crystallographic plane orientation of the principal surface of the nitride semiconductor single-crystal wafer varies locally within a predetermined angular range.
摘要翻译：可以通过指定或控制氮化物半导体衬底的主表面的偏轴角度的局部变化来获得具有优选用于制造各种氮化物半导体器件的性质的氮化物半导体衬底。在具有平坦主表面的氮化物半导体单晶晶片中，氮化物半导体单晶晶片的主表面的晶面取向在预定角度范围内局部变化。

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