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1. 发明申请

US20110132410A1 GaxIn1-xN Substrate and GaxIn1-xN Substrate Cleaning Method 审中-公开
标题翻译： GaxIn1-xN基板和GaxIn1-xN基板清洁方法
公开(公告)号：US20110132410A1
公开(公告)日：2011-06-09
申请号：US12376573
申请日：2007-06-15
申请人： Tomoki Uemura , Hideaki Nakahata
发明人： Tomoki Uemura , Hideaki Nakahata
IPC分类号： B08B3/12 , B32B5/16 , C11D7/32
CPC分类号： C30B29/403 , B08B3/12 , C30B33/00 , C30B33/10 , H01L21/02052 , Y10T428/25
摘要： Affords GaxIn1-xN substrates onto which high-quality epitaxial films can be stably grown, and cleaning methods for manufacturing the GaxIn1-xN substrates. GaxIn1-xN substrate in which the number of particles of not less than 0.2 μm particle size present on the GaxIn1-xN substrate surface is 20 or fewer, given that the GaxIn1-xN substrate diameter is 2 inches. Furthermore, a GaxIn1-xN substrate in which, in a photoelectron spectrum along the surface by X-ray photoelectron spectroscopy at a take-off angle of 10°, the ratio between the peak areas of the C1s electron and N1s electron (C 1s electron peak area/N 1s electron peak area) is not greater than 3.
摘要翻译：提供可稳定生长高品质外延膜的GaxIn1-xN基板，以及用于制造GaxIn1-xN基板的清洗方法。考虑到GaxIn1-xN基板直径为2英寸，GaxIn1-xN基板在GaxIn1-xN基板表面上存在不少于0.2μm粒径的颗粒数为20个以下的GaxIn1-xN基板。此外，GaxIn1-xN衬底，其中，在以10°的起飞角通过X射线光电子能谱分析的沿着表面的光电子光谱中，C1s电子和N1s电子的峰面积之比（C 1s电子峰面积/ N 1s电子峰面积）不大于3。

2. 发明授权

US07943964B2 AlxGayIn1−x−yN crystal substrate, semiconductor device, and method of manufacturing the same 有权
标题翻译： AlxGayIn1-x-yN晶体基板，半导体器件及其制造方法
公开(公告)号：US07943964B2
公开(公告)日：2011-05-17
申请号：US12096986
申请日：2006-10-16
申请人： Shinsuke Fujiwara , Tomoki Uemura , Takuji Okahisa , Koji Uematsu , Manabu Okui , Muneyuki Nishioka , Shin Hashimoto
发明人： Shinsuke Fujiwara , Tomoki Uemura , Takuji Okahisa , Koji Uematsu , Manabu Okui , Muneyuki Nishioka , Shin Hashimoto
IPC分类号： H01L33/30
CPC分类号： H01L21/02658 , C30B25/02 , C30B29/403 , H01L21/02389 , H01L21/0254
摘要： An AlxGayIn1-x-yN crystal substrate of the present invention has a main plane having an area of at least 10 cm2. The main plane has an outer region located within 5 mm from an outer periphery of the main plane, and an inner region corresponding to a region other than the outer region. The inner region has a total dislocation density of at least 1×102 cm−2 and at most 1×106 cm−2. It is thereby possible to provide an AlxGayIn1-x-yN crystal substrate having a large size and a suitable dislocation density for serving as a substrate for a semiconductor device, a semiconductor device including the AlxGayIn1-x-yN crystal substrate, and a method of manufacturing the same.
摘要翻译：本发明的Al x Ga y In 1-x-y N晶体基板具有面积为至少10cm 2的主平面。主平面具有位于与主平面的外周5mm以内的外部区域和与外部区域以外的区域对应的内部区域。内部区域的总位错密度为1×102cm 2以上且1×10 6 cm -2以下。由此，可以提供具有大尺寸和合适的位错密度的Al x Ga y In 1-x-y N晶体基板，用作半导体器件的基板，包括Al x Ga y In 1-x-y N晶体基板的半导体器件，以及制造相同。

3. 发明申请

US20090032907A1 Method for Producing GaxIn1-xN(0) Crystal Gaxin1-xn(0 审中-公开
标题翻译：生产GaxIn1-xN（0x）晶体Gaxin1-xn（0
公开(公告)号：US20090032907A1
公开(公告)日：2009-02-05
申请号：US11919705
申请日：2006-08-17
申请人： Tomoki Uemura , Shinsuke Fujiwara , Takuji Okahisa , Ryu Hirota , Hideaki Nakahata
发明人： Tomoki Uemura , Shinsuke Fujiwara , Takuji Okahisa , Ryu Hirota , Hideaki Nakahata
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： C30B25/02 , C30B25/10 , C30B29/403 , C30B29/406
摘要： It seems that a conventional method for producing a GaN crystal by using HVPE has a possibility that the crystallinity of a GaN crystal can be improved by producing a GaN crystal at a temperature higher than 1100° C. However, such a conventional method has a problem in that a quartz reaction tube (1) is melted when heated by heaters (5) and (6) to a temperature higher than 1100° C.Disclosed herein is a method for producing a GaxIn1-xN (0≦x≦1) crystal (12) by growing GaxIn1-xN (0≦x≦1) crystal (12) on the surface of a base substrate (7) by the reaction of a material gas, containing ammonia gas and at least one of a gallium halide gas and an indium halide gas, in a quartz reaction tube (1), wherein during the growth of GaxIn1-xN (0≦x≦1) crystal (12), quartz reaction tube (1) is externally heated and base substrate (7) is individually heated.
摘要翻译：看来，通过使用HVPE制造GaN晶体的常规方法可能通过在高于1100℃的温度下生成GaN晶体来提高GaN晶体的结晶度。然而，这种常规方法具有问题因为当加热器（5）和（6）加热时，石英反应管（1）熔化到高于1100℃的温度。本文公开了一种制备GaxIn1-xN（0≤x≤1））晶体（12）通过使含有氨气体的材料气体与至少一种以上的气体的反应在基底基板（7）的表面上生长GaxIn1-xN（0 <= x <= 1）晶体（12）在石英反应管（1）中，在GaxIn1-xN（0 <= x <= 1）晶体（12）生长期间，石英反应管（1）被外部加热，基底基板（7）被单独加热。

4. 发明授权

US06805808B2 Method for separating chips from diamond wafer 失效
标题翻译：从金刚石晶片分离芯片的方法
公开(公告)号：US06805808B2
公开(公告)日：2004-10-19
申请号：US10129925
申请日：2002-05-13
申请人： Satoshi Fujii , Noboru Gotou , Tomoki Uemura , Toshiaki Saka , Katsuhiro Itakura
发明人： Satoshi Fujii , Noboru Gotou , Tomoki Uemura , Toshiaki Saka , Katsuhiro Itakura
IPC分类号： H01L21301
CPC分类号： H01L21/78 , B23K26/364 , B23K26/40 , B23K2101/40 , B23K2103/172 , B23K2103/30 , B23K2103/50
摘要： A method for separating chips from a diamond wafer comprising a substrate, a chemically vapor-deposited diamond layer, and microelectronic elements, with the microelectronic elements protected from thermal damage and degradation caused by the thermally decomposed cuttings produced during the processing steps. (1) Front-side grooves 6 are formed on the chemically vapor-deposited diamond layer 2 by laser processing using a laser such as a YAG, CO2, or excimer laser each having a large output so that the grooves 6 can have a depth 1/100 to 1.5 times the thickness of the diamond layer. (2) The thermally decomposed cuttings produced during the laser processing are removed by using a plasma. (3) Back-side grooves 9 are formed on the substrate 1 by dicing such that the back-side grooves 9 are in alignment with the front-side grooves 6. (4) The diamond wafer 4 is divided into individual chips 10 by applying mechanical stresses.

5. 发明授权

US06525235B2 Method for manufacturing 2,6-dimethylnaphthalene 有权
公开(公告)号：US06525235B2
公开(公告)日：2003-02-25
申请号：US09965822
申请日：2001-10-01
申请人： Shingo Yoshida , Masahiro Motoyuki , Tomoki Uemura , Koji Yamamoto
发明人： Shingo Yoshida , Masahiro Motoyuki , Tomoki Uemura , Koji Yamamoto
IPC分类号： C07C714
CPC分类号： C07C7/14 , C07C15/24
摘要： The present invention provides a method for manufacturing a highly pure 2,6-dimethylnaphthalene having a purity of 99% or more even when a mixture of dimethylnaphthalene isomers containing 5 wt % or more of 2,7-dimethylnaphthalate is used as a feedstock. The method for manufacturing 2,6-dimethylnaphthalene comprises a step of performing crystallization and solid-liquid separation of a liquid primarily containing dimethylnaphthalene isomers so that the liquid is separated into a cake containing the dimethylnaphthalene isomers and a mother liquor, and a step of performing separation/purification of the cake. In the method described above, the crystallization and the solid-liquid separation are performed under the condition in which the ratio of the content of 2,6-dimethylnaphthalene in the mother liquor to that of 2,7-dimethylnaphthalene therein is not less than 1 so that the content of 2,6-dimethylnaphthalene in the cake is 60% or more and that the content of 2,7-dimethylnaphthalene therein is 6.5% or less. As a result, a highly pure 2,6-dimethylnaphthalene is obtained by performing the separation/purification of the cake.

6. 发明授权

US06320296B1 Diamond wafer, method of estimating a diamond wafer and diamond surface acoustic wave device 失效
公开(公告)号：US06320296B1
公开(公告)日：2001-11-20
申请号：US09825887
申请日：2001-04-05
申请人： Satoshi Fujii , Yuichiro Seki , Kentaro Yoshida , Hideaki Nakahata , Kenjiro Higaki , Hiroyuki Kitabayashi , Tomoki Uemura , Shin-ichi Shikata
发明人： Satoshi Fujii , Yuichiro Seki , Kentaro Yoshida , Hideaki Nakahata , Kenjiro Higaki , Hiroyuki Kitabayashi , Tomoki Uemura , Shin-ichi Shikata
IPC分类号： H10L4108
CPC分类号： H03H3/08 , H03H9/02582 , Y10T428/24479 , Y10T428/24917 , Y10T428/24975 , Y10T428/265 , Y10T428/30 , Y10T428/31678
摘要： Surfaces of diamond crystals are examined by coating the surfaces with thin metal films, launching laser beams to the diamond surfaces in a slanting angle, detecting defects and particles on the diamond surfaces by the scattering of beams and counting the defects and particles by a laser scanning surface defect detection apparatus. Diamond SAW devices should be made on the diamond films or bulks with the defect density less than 300 particles cm−2. Preferably, the diamond surfaces should have roughness less than Ra20 nm. Diamond SAW filters can be produced by depositing a piezoelectric film and making interdigital transducers on the low-defect density diamond crystals.

7. 发明申请

US20130153368A1 FEEDING SYSTEM FOR REDUCED IRON MATERIAL 有权
标题翻译：减少铁材料的进料系统
公开(公告)号：US20130153368A1
公开(公告)日：2013-06-20
申请号：US13820263
申请日：2011-08-31
申请人： Osamu Tsuge , Tomoki Uemura
发明人： Osamu Tsuge , Tomoki Uemura
IPC分类号： B65G27/00
CPC分类号： B65G27/00 , C21B13/0053 , C21B13/10 , F27B9/16 , F27B9/38 , F27D2003/0004
摘要： Not only the cracking of granular reduced iron materials is reduced, but also reduced iron materials are fed uniformly onto a furnace floor regardless of a width of the furnace floor. A feeding system for reduced iron material includes a plurality of material feeding equipments 4 provided in a furnace width direction of a mobile furnace floor type reduction melting furnace, wherein each of the material feeding equipments 4 is constructed by a hopper 10 configured to receive reduced iron materials and discharge the materials from a discharge port 10a, a trough 14 configured to connect the discharge port 10a and a material charging portion of the mobile furnace floor type reduction melting furnace configured to receive the reduced iron materials discharged from the discharge port 10a, an exit portion provided on an exit side of the trough 14, and a vibration applying unit configured to cause the trough to vibrate along a furnace floor moving direction.
摘要翻译：不仅减少了粒状还原铁材料的破裂，而且还减少了铁材料均匀地进料到炉底，而不管炉底的宽度如何。用于还原铁材料的进料系统包括设置在移动式炉底式还原熔炉的炉宽方向上的多个供料设备4，其中每个供料设备4由构造成容纳还原铁的料斗10构成材料并从排出口10a排出材料，将构造成连接排出口10a的槽14和构造成容纳从排出口10a排出的还原铁物质的移动式炉底型减速熔炉的材料充填部，设置在槽14的出口侧的出口部，以及构造成使槽沿着炉底移动方向振动的振动施加单元。

8. 发明授权

US08147612B2 Method for manufacturing gallium nitride crystal and gallium nitride wafer 有权
标题翻译：制造氮化镓晶体和氮化镓晶片的方法
公开(公告)号：US08147612B2
公开(公告)日：2012-04-03
申请号：US12298332
申请日：2007-04-24
申请人： Tomoki Uemura , Takashi Sakurada , Shinsuke Fujiwara , Takuji Okahisa , Koji Uematsu , Hideaki Nakahata
发明人： Tomoki Uemura , Takashi Sakurada , Shinsuke Fujiwara , Takuji Okahisa , Koji Uematsu , Hideaki Nakahata
IPC分类号： C30B21/02
CPC分类号： H01L21/02623 , C30B25/186 , C30B25/20 , C30B29/406 , H01L21/02389 , H01L21/0254 , H01L21/0262 , H01L21/02658
摘要： There is provided a method for fabricating a gallium nitride crystal with low dislocation density, high crystallinity, and resistance to cracking during polishing of sliced pieces by growing the gallium nitride crystal using a gallium nitride substrate including dislocation-concentrated regions or inverted-polarity regions as a seed crystal substrate. Growing a gallium nitride crystal 79 at a growth temperature higher than 1,100° C. and equal to or lower than 1,300° C. so as to bury dislocation-concentrated regions or inverted-polarity regions 17a reduces dislocations inherited from the dislocation-concentrated regions or inverted regions 17a, thus preventing new dislocations from occurring over the dislocation-concentrated regions or inverted-polarity regions 17a. This also increases the crystallinity of the gallium nitride crystal 79 and its resistance to cracking during the polishing.
摘要翻译：提供了通过使用包括位错集中区域或反极性区域的氮化镓衬底生长氮化镓晶体来制造在切片的研磨期间具有低位错密度，高结晶度和耐龟裂性的氮化镓晶体的方法，晶种基片。在高于1100℃并且等于或低于1300℃的生长温度下生长氮化镓晶体79，以便掩埋位错集中区域或反极性区域17a减少从位错集中区域遗留的位错或反转区域17a，从而防止在位错集中区域或反极性区域17a上发生新的位错。这也增加了氮化镓晶体79的结晶度及其在抛光过程中的抗开裂性。

9. 发明申请

US20100322841A1 III-Nitride Single-Crystal Ingot, III-Nitride Single-Crystal Substrate, Method of Manufacturing III-Nitride Single-Crystal Ingot, and Method of Manufacturing III-Nitride Single-Crystal Substrate 有权
标题翻译： III型氮化物单晶锭，III型氮化物单晶基板，III型氮化物单晶锭的制造方法以及制造III型氮化物单晶基板的方法
公开(公告)号：US20100322841A1
公开(公告)日：2010-12-23
申请号：US12864874
申请日：2008-12-24
申请人： Takuji Okahisa , Seiji Nakahata , Tomoki Uemura
发明人： Takuji Okahisa , Seiji Nakahata , Tomoki Uemura
IPC分类号： C30B23/02 , C01B21/06
CPC分类号： C30B29/403 , C30B25/02 , C30B29/406 , C30B33/12
摘要： Affords Group-III nitride single-crystal ingots and III-nitride single-crystal substrates manufactured utilizing the ingots, as well as methods of manufacturing III-nitride single-crystal ingots and methods of manufacturing III-nitride single-crystal substrates, wherein the incidence of cracking during length-extending growth is reduced. Characterized by including a step of etching the edge surface of a base substrate, and a step of epitaxially growing onto the base substrate hexagonal-system III-nitride monocrystal having crystallographic planes on its side surfaces. In order to reduce occurrences of cracking during length-extending growth of the ingot, depositing-out of polycrystal and out-of-plane oriented crystal onto the periphery of the monocrystal must be controlled. A layer of the base substrate edge surface, as just described, where it has been mechanically altered is removed beforehand by etching, whereby crystallographic planes form on the side surfaces of the III-nitride single-crystal ingot that is formed onto the base substrate, which therefore controls depositing-out of polycrystal and out-of-plane oriented crystal and reduces occurrences of cracking.
摘要翻译：提供利用晶锭制造的III族氮化物单晶锭和III族氮化物单晶衬底，以及III族氮化物单晶锭的制造方法和III族氮化物单晶衬底的制造方法，在长度延长生长期间的裂纹减少。其特征在于包括蚀刻基底衬底的边缘表面的步骤，以及在其基底上外延生长六面体系III族氮化物单晶的步骤，在其侧表面上具有晶面。为了减少晶锭的长度延长生长期间的裂纹发生，必须控制将多晶和面外取向的晶体沉积到单晶的周围。如已经机械地改变的刚刚描述的基底边缘表面的层通过蚀刻预先去除，由此在形成在基底基板上的III族氮化物单晶锭的侧表面上形成结晶平面，因此控制多晶体和面外取向晶体的沉积并减少裂纹发生。

10. 发明申请

US20090194847A1 A1xGa yIn 1-x-yN CRYSTAL SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译： Al x Ga y In 1-x-y N晶体衬底，半导体器件及其制造方法
公开(公告)号：US20090194847A1
公开(公告)日：2009-08-06
申请号：US12096986
申请日：2006-10-16
申请人： Shinsuke Fujiwara , Tomoki Uemura , Takuji Okahisa , Koji Uematsu , Manabu Okui , Muneyuki Nishioka , Shin Hashimoto
发明人： Shinsuke Fujiwara , Tomoki Uemura , Takuji Okahisa , Koji Uematsu , Manabu Okui , Muneyuki Nishioka , Shin Hashimoto
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： H01L21/02658 , C30B25/02 , C30B29/403 , H01L21/02389 , H01L21/0254
摘要： An AlxGayIn1-x-yN crystal substrate of the present invention has a main plane having an area of at least 10 cm2. The main plane has an outer region located within 5 mm from an outer periphery of the main plane, and an inner region corresponding to a region other than the outer region. The inner region has a total dislocation density of at least 1×102 cm−2 and at most 1×106 cm-31 2. It is thereby possible to provide an AlxGayIn1-x-yN crystal substrate having a large size and a suitable dislocation density for serving as a substrate for a semiconductor device, a semiconductor device including the AlxGayIn1-x-yN crystal substrate, and a method of manufacturing the same.
摘要翻译：本发明的Al x Ga y In 1-x-y N晶体基板具有面积为至少10cm 2的主平面。主平面具有位于与主平面的外周5mm以内的外部区域和与外部区域以外的区域对应的内部区域。内部区域的总位错密度为至少1×102cm-2，最多为1×106cm-31.2。由此，可以提供具有大尺寸和合适位错密度的Al x Ga y In 1-x-y N晶体基板，用作用于半导体器件的衬底，包括Al x Ga y In 1-x-y N晶体衬底的半导体器件及其制造方法。

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