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61. 发明授权

US4585444A Intravenous needle assembly 失效
标题翻译：静脉针装置
公开(公告)号：US4585444A
公开(公告)日：1986-04-29
申请号：US477805
申请日：1983-03-22
申请人： Christopher Harris
发明人： Christopher Harris
IPC分类号： A61M25/06 , A61N5/00
CPC分类号： A61M25/0637
摘要： A handle for use in an intravenous needle assembly in which the handle comprises a body portion being connected via hinge portions to oppositely extending wing sections. The body portion of the handle has at its distal end an insertion aid in the form of laterally extending horns against which pressure may be applied when introducing the point of the needle of the intravenous needle assembly which comprises a needle, a hub which rigidly holds the needle and a handle as described above which is mounted on the needle hub in a manner which allows free rotation of the needle hub within the handle.
摘要翻译：一种用于静脉内针组件的手柄，其中手柄包括通过铰链部分连接到相对延伸翼部的主体部分。手柄的主体部分在其远端处具有横向延伸的喇叭形式的插入辅助件，当引入静脉内针组件的针头的位置时可施加压力，该静脉注射针组件的针头包括针，刚性地保持针和手柄，其以允许针座在手柄内自由旋转的方式安装在针座上。

62. 发明授权

US08664664B2 Silicon carbide dimpled substrate 有权
标题翻译：碳化硅凹凸基板
公开(公告)号：US08664664B2
公开(公告)日：2014-03-04
申请号：US11651528
申请日：2007-01-10
申请人： Christopher Harris , Cem Basceri , Thomas Gehrke , Cengiz Balkas
发明人： Christopher Harris , Cem Basceri , Thomas Gehrke , Cengiz Balkas
IPC分类号： H01L29/15 , H01L31/0312
CPC分类号： H01L33/38 , H01L21/0475 , H01L23/367 , H01L23/3738 , H01L29/0657 , H01L29/1608 , H01L29/20 , H01L29/2003 , H01L29/417 , H01L33/0079 , H01L33/32 , H01L2924/0002 , H01L2924/10158 , H01L2933/0016 , H01L2924/00
摘要： A dimpled substrate and method of making including a substrate of high thermal conductivity having a first main surface and a second main surface opposite the first main surface. Active epitaxial layers are formed on the first main surface of the substrate. Dimples are formed as extending from the second main surface into the substrate toward the first main surface. An electrical contact of low resistance material is disposed on the second main surface and within the dimples. A back contact of low resistance and low loss is thus provided while maintaining the substrate as an effective heat sink.
摘要翻译：一种凹凸基板及其制造方法，包括具有第一主表面和与第一主表面相对的第二主表面的具有高导热性的基板。在衬底的第一主表面上形成有源外延层。凹坑形成为从第二主表面延伸到基板朝向第一主表面。低电阻材料的电触点设置在第二主表面和凹坑内。因此，在保持基板作为有效散热器的同时提供低电阻和低损耗的背接触。

63. 外观设计

USD695234S1 Control panel 有权
公开(公告)号：USD695234S1
公开(公告)日：2013-12-10
申请号：US29417625
申请日：2012-04-05
申请人： Todd Matthew Santiago , James Ellis Nye , Alexander Dunn , Bruce Ehlers , Christopher Harris , Scott Simon , Lance Leo Dean
设计人： Todd Matthew Santiago , James Ellis Nye , Alexander Dunn , Bruce Ehlers , Christopher Harris , Scott Simon , Lance Leo Dean

64. 发明授权

US08244896B2 Method, apparatus and program product for media identification and tracking associated user preferences 有权
标题翻译：用于介质识别和跟踪相关用户偏好的方法，设备和程序产品
公开(公告)号：US08244896B2
公开(公告)日：2012-08-14
申请号：US11892015
申请日：2007-08-17
申请人： Mark L. Woodward , E. Oliver Jones , Gene S. Fein , Christopher Harris , Steve S. Sherman , Bennie Jones , Anthony Salotto
发明人： Mark L. Woodward , E. Oliver Jones , Gene S. Fein , Christopher Harris , Steve S. Sherman , Bennie Jones , Anthony Salotto
IPC分类号： G06F15/16
CPC分类号： G06Q30/02 , G11B27/322 , H04L67/22
摘要： Collecting user preference information related to a playing media recording is accomplished by gathering descriptive information related to the playing media recording from a media player program presenting the playing media recording and determining if tags are embedded in the media recording and gathering descriptive information related to the playing media recording from the tags embedded in the playing media recording, if the tags exist. Further, determining if a table of contents exists on the media recording and gathering a table of contents for a collection containing the playing media recording by identifying the collection using a concatenation of track lengths identifier generation technique, the table of contents exists. Then assembling the descriptive information into a media recording information packet and sending the media recording information packet to a server computer, resulting in a collection of user preference information related to the playing media recording.
摘要翻译：收集与播放媒体记录相关的用户偏好信息是通过从呈现播放媒体记录的媒体播放器节目收集与播放媒体记录有关的描述性信息，并且确定标签是否被嵌入在媒体记录中并且收集与播放有关的描述信息如果标签存在，则从嵌入在播放媒体记录中的标签的媒体记录。此外，通过使用音轨长度标识符生成技术的级联来确定媒体记录上是否存在内容表并收集包含播放媒体记录的集合的内容表，存在目录。然后将描述信息组装到媒体记录信息包中，并将媒体记录信息包发送到服务器计算机，从而收集与播放媒体记录相关的用户偏好信息。

65. 发明授权

US08167120B2 Lateral load building conveyor apparatus 失效
标题翻译：横向装载式输送机
公开(公告)号：US08167120B2
公开(公告)日：2012-05-01
申请号：US12564805
申请日：2009-09-22
申请人： Achie B. Russell , Christopher Harris , Sean Finley , Donald West
发明人： Achie B. Russell , Christopher Harris , Sean Finley , Donald West
IPC分类号： B65G43/08
CPC分类号： B65G47/54 , B65G2201/0288
摘要： A load moving apparatus is operable to move a load, such as a stack of sheet product, in a first and second direction on a staging area. The load moving apparatus includes a first conveyor, a second conveyor, and a translating device. The first conveyor defines the staging area and is configured to move a load in a first direction. The second conveyor is positioned within the staging area and is configured to move the load in a second direction different from the first direction. The translating device is configured to move vertically one of the first conveyor and the second conveyor relative to the other of the first conveyor and the second conveyor. The load moving apparatus can be used to build or break down loads entering the staging area.
摘要翻译：负载移动装置可操作以在分段区域上沿着第一和第二方向移动诸如一叠片材产品的负载。负载移动装置包括第一输送机，第二输送机和平移装置。第一输送机定义了分段区域，并且被配置成沿第一方向移动负载。第二输送机定位在分段区域内并且构造成沿与第一方向不同的第二方向移动负载。平移装置构造成相对于第一输送机和第二输送机中的另一个垂直地移动第一输送机和第二输送机之一。负载移动装置可用于构建或分解进入分段区域的负载。

66. 发明授权

US07834396B2 Lateral field effect transistor and its fabrication comprising a spacer layer above and below the channel layer 有权
标题翻译：横向场效应晶体管及其制造包括在沟道层上方和下方的间隔层
公开(公告)号：US07834396B2
公开(公告)日：2010-11-16
申请号：US11661962
申请日：2004-09-01
申请人： Christopher Harris , Andrei Konstantinov
发明人： Christopher Harris , Andrei Konstantinov
IPC分类号： H01L29/94
CPC分类号： H01L29/66068 , H01L21/0465 , H01L29/1029 , H01L29/1058 , H01L29/1608 , H01L29/2003 , H01L29/802 , H01L29/808 , H01L29/812
摘要： A lateral field effect transistor for high switching frequencies having a source region layer (4) and a drain region layer (5) laterally spaced and of highly doped first conductivity type, a first-conductivity-type channel layer (6) of lower doping concentration extending laterally and interconnecting the source region layer (4) and the drain region layer (5). The transistor has a gate electrode (7) arranged to control the properties of the channel layer (6), and a second-conductivity-type base layer (8) arranged under the channel layer (6) at least partially overlapping the gate electrode (7) and at a lateral distance to the drain region layer (5), the highly doped second-conductivity-type base layer (8) being shorted to the source region layer (4). The transistor also has at least one of the following: a) a spacer layer (10) having semiconductor material adjacent to the channel layer (6) and located between the channel layer (6) and gate electrode (7), at least in the vicinity of the gate electrode (7), and/or b) a spacer layer (9) having semiconductor material adjacent to the channel layer (6) and located between the channel layer (6) and the second-conductivity-type base layer (8).
摘要翻译：一种用于高开关频率的横向场效应晶体管，具有横向隔开的源区域层（4）和漏极区域层（5）以及高度掺杂的第一导电类型，具有较低掺杂浓度的第一导电型沟道层（6）横向延伸并互连源区域层（4）和漏极区域层（5）。晶体管具有布置成控制沟道层（6）的性质的栅电极（7）和布置在通道层（6）下方的至少部分地与栅电极重叠的第二导电型基极层（8）如图7所示，并且在与漏极区域（5）的横向距离处，高掺杂的第二导电型基极层（8）被短路到源极区域层（4）。晶体管还具有以下至少一个：a）具有与沟道层（6）相邻并位于沟道层（6）和栅电极（7）之间的半导体材料的间隔层（10），至少在栅极电极（7）的附近，和/或b）具有与沟道层（6）相邻并位于沟道层（6）和第二导电型基极层（6）之间的半导体材料的间隔层（9） 8）。

67. 发明申请

US20090140326A1 SHORT GATE HIGH POWER MOSFET AND METHOD OF MANUFACTURE 有权
标题翻译：短栅高功率MOSFET及其制造方法
公开(公告)号：US20090140326A1
公开(公告)日：2009-06-04
申请号：US11949221
申请日：2007-12-03
申请人： Andrei Konstantinov , Christopher Harris , Jan-Olov Svederg
发明人： Andrei Konstantinov , Christopher Harris , Jan-Olov Svederg
IPC分类号： H01L29/00 , H01L21/336
CPC分类号： H01L29/7828 , H01L29/0696 , H01L29/0847 , H01L29/1608 , H01L29/2003 , H01L29/41766 , H01L29/4236 , H01L29/66666
摘要： A short gate high power metal oxide semiconductor field effect transistor formed in a trench includes a short gate having gate length defined by spacers within the trench. The transistor further includes a buried region that extends beneath the trench and beyond a corner of the trench, that effectively shields the gate from high drain voltage, to prevent short channel effects and resultantly improve device performance and reliability.
摘要翻译：形成在沟槽中的短栅极高功率金属氧化物半导体场效应晶体管包括具有由沟槽内的间隔物限定的栅极长度的短栅极。晶体管还包括在沟槽下方延伸并超出沟槽角部的掩埋区域，其有效地屏蔽栅极与高漏极电压，以防止短沟道效应并从而提高器件性能和可靠性。

68. 发明授权

US07539622B1 Programmable RFID postage stamps 失效
标题翻译：可编程RFID邮票
公开(公告)号：US07539622B1
公开(公告)日：2009-05-26
申请号：US12190758
申请日：2008-08-13
申请人： Christopher Harris , Katherine Shann , Leon Roberts , Alexandra Pickerill
发明人： Christopher Harris , Katherine Shann , Leon Roberts , Alexandra Pickerill
IPC分类号： G06Q10/00 , G06Q30/00 , G06F7/00 , G08B13/14
CPC分类号： G06Q10/00 , H01Q1/2225
摘要： The user can attach a stamp without a predetermined postage to an article to be mailed. The stamp has a top layer having a visual display, middle layer having an electronics layer, and a bottom layer having an adhesive layer. The stamp is encoded such that the visual display of the stamp is altered to indicate a state of the stamp. Postage of the article is determined by a postal authority worker and payment is authorized using the unique identifier. This eliminates the need for the sender to have any personal interaction with a postal worker to ship an article and eliminating the need for the sender to estimate postal cost prior to the article being received at the postal office. Altering the adhesive layer provides safe removal of the affixed stamp which can then be reused.
摘要翻译：用户可以将没有预定邮资的邮票附加到要邮寄的物品上。印模具有具有视觉显示的顶层，中间层具有电子层，以及具有粘合剂层的底层。邮票被编码，使得邮票的视觉显示被改变以指示邮票的状态。文章的邮费由邮政当局工作人员确定，并且使用唯一标识符授权付款。这消除了发件人需要与邮政工作者进行任何个人交互以发送文章，并且消除了发送者在邮政局收到文章之前估计邮政费用的必要性。改变粘合剂层可以安全地除去固化的印模，然后可以重复使用。

69. 发明授权

US07485512B2 Method of manufacturing an adaptive AIGaN buffer layer 有权
标题翻译：制造自适应AIGaN缓冲层的方法
公开(公告)号：US07485512B2
公开(公告)日：2009-02-03
申请号：US11474431
申请日：2006-06-26
申请人： Christopher Harris , Thomas Gehrke , T. Warren Weeks, Jr. , Cem Basceri , Elif Berkman
发明人： Christopher Harris , Thomas Gehrke , T. Warren Weeks, Jr. , Cem Basceri , Elif Berkman
IPC分类号： H01L21/338
CPC分类号： H01L29/7783 , H01L29/2003
摘要： A method of compensating resistivity of a near-surface region of a substrate includes epitaxially growing a buffer layer on the substrate, wherein the buffer is grown as having a dopant concentration as dependent on resistivity and conductivity of the substrate, so as to deplete residual or excess charge within the near-surface region of the substrate. The dopant profile of the buffer layer be smoothly graded, or may consist of sub-layers of different dopant concentration, to also provide a highly resistive upper portion of the buffer layer ideal for subsequent device growth. Also, the buffer layer may be doped with carbon, and aluminum may be used to getter the carbon during epitaxial growth.
摘要翻译：补偿衬底的近表面区域的电阻率的方法包括在衬底上外延生长缓冲层，其中缓冲液生长为具有取决于衬底的电阻率和导电性的掺杂剂浓度，从而消耗残余或在基板的近表面区域内的过量电荷。缓冲层的掺杂剂分布平滑地分级，或者可以由不同掺杂剂浓度的子层构成，还提供缓冲层的高度电阻上部，对于随后的器件生长是理想的。此外，缓冲层可以掺杂碳，并且可以在外延生长期间使用铝来吸收碳。

70. 发明授权

US07326971B2 Gallium nitride based high-electron mobility devices 有权
标题翻译：基于氮化镓的高电子迁移率器件
公开(公告)号：US07326971B2
公开(公告)日：2008-02-05
申请号：US11147341
申请日：2005-06-08
申请人： Christopher Harris , Thomas Gehrke , T. Warren Weeks, Jr. , Cem Basceri
发明人： Christopher Harris , Thomas Gehrke , T. Warren Weeks, Jr. , Cem Basceri
IPC分类号： H01L29/778
CPC分类号： H01L29/7783 , H01L29/2003
摘要： A heterojunction device includes a first layer of p-type aluminum gallium nitride; a second layer of undoped gallium nitride on the first layer; a third layer of aluminum gallium nitride on the second layer; and an electron gas between the second and third layers. A heterojunction between the first and second layers injects positive charge into the second layer to compensate and/or neutralize negative charge within the electron gas.
摘要翻译：异质结装置包括第一层p型氮化铝镓; 在第一层上的第二层未掺杂的氮化镓; 在第二层上的第三层氮化铝镓; 以及在第二和第三层之间的电子气体。第一和第二层之间的异质结将正电荷注入第二层以补偿和/或中和电子气中的负电荷。

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