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81. 发明专利

JPS63277594A PRODUCTION OF SEMICONDUCTOR WAFER 失效
公开(公告)号：JPS63277594A
公开(公告)日：1988-11-15
申请号：JP11323787
申请日：1987-05-09
申请人： OSAKA TITANIUM , KYUSHU DENSHI KINZOKU KK
发明人： YAMAMOTO SHIGEO , NODA TOSHIO , ARIMURA SEIICHI
IPC分类号： H01L21/208 , C30B1/08 , C30B29/06 , C30B31/06
摘要： PURPOSE:To enable production of high-quality wafers substantially without waste, by heating a polycrystal Si plate partially having single crystal layers to convert at least a part into single crystal and doping the part with an impurity. CONSTITUTION:A polycrystal Si rod 1 is directly or after being crushed, melted in a heated quartz furnace 3 and extruded from the valve 4 at the bottom of the furnace 3 through casting nozzle 5 to form a polycrystal Si plate 2'. The plate 2' is introduced into CVD chamber 6 to form the CVD layer 7 of polycrystal Si on the surface. At this time, the layer 7 is made different in oxygen concentration from wafer plate 2'' or doped with dopants to form a layer having a polarization tendency to facilitate single crystallization. The layer 7 is irradiated with, e.g., electron beams 8 in the heat-treatment unit 11 to form a seed 9 of single crystal. Then, the intensity of beams 8 is controlled, when needed, heat is applied from the outside to convert the layer 7 from single crystal into single crystal Si 12.

82. 发明专利

JPS63226030A MANUFACTURE OF SEMICONDUCTOR SUBSTRATE 失效
公开(公告)号：JPS63226030A
公开(公告)日：1988-09-20
申请号：JP22364187
申请日：1987-09-07
申请人： KYUSHU DENSHI KINZOKU KK , OSAKA TITANIUM
发明人： HORAI MASATAKA , NARUTOMI TOSHIO , OKA YASUNORI , USO NAOTO
IPC分类号： H01L21/322
摘要： PURPOSE:To prevent any dusting from occurring in later processes by a method wherein a distorted layer is formed on the rear of raw material mechanically or by laser beam irradiation to be removed within specified range (thickness) by a chemical process. CONSTITUTION:A distorted layer is formed on the rear of a raw material mechanically or by laser beam irradiation. Then, the rear distorted layer is removed in etching level within the range of 200-5000Angstrom . Thus, the least surface stained semiconductor substrate can be formed without lessening the gettering effect so that the substrate may be adapted for several types of devices by selecting pertinent combination of distortion level and etching level.

83. 发明专利

JPS63170297A SYSTEM FOR CONTROLLING RUNOUT WIDTH OF SINGLE CRYSTAL SILICON IN CZ FURNACE 失效
公开(公告)号：JPS63170297A
公开(公告)日：1988-07-14
申请号：JP275087
申请日：1987-01-09
申请人： KYUSHU DENSHI KINZOKU KK , OSAKA TITANIUM
发明人： ICHIKAWA HIROSHI
IPC分类号： C30B15/26 , C30B29/06 , H01L21/18
摘要： PURPOSE:To prevent the deterioration of quality and shape of a single crystal arising from oscillation, by detecting the high luminance points of a high-luminance band- shaped ring formed to the boundary part between the single crystal grown in a CZ furnace and melt by a specific camera and controlling the oscillation of a wire by means of a controller and wire steady rest. CONSTITUTION:A crucible 2 contg. a silicon melt 3 is so disposed in the CZ furnace 1 that the crucible can be driven to rotate. The columnar single crystal silicon 6 is stuck to a seed crystal 5 at the top end of a wire 4 suspended toward the center of the crucible 2 and is grown. The boundary part between the single crystal silicon 6 and the melt 3 is detected as the high-luminance band-shaped ring 7 by scanning the one-dimensional CCD camera 8. The two high-luminance points A, B thereon are inputted as detection signals an, bn (e.g.: a1 and b1 and a2 and b2) to a controller 10. The controller controls the runout width of the wire 4 by driving the wire steady rest 11 which is operated to decrease the runout width of the wire 4 by contacting the wire 4 when the displacement calculated by the steady rest 11, a floppy driving device 12, a CRT display 13, etc., exceeds a permissible value. The deterioration of the crystal is thus prevented and the quality thereof is improved.

84. 发明专利

JPS6377130A OBSERVATION OF SEMICONDUCTOR CRYSTAL DEFECT 失效
公开(公告)号：JPS6377130A
公开(公告)日：1988-04-07
申请号：JP22254786
申请日：1986-09-19
申请人： KYUSHU DENSHI KINZOKU KK
发明人： HIRAMOTO KAZUO
IPC分类号： G09F9/00 , G01N21/88 , G01N21/956 , G01N23/04 , G09F9/30 , H01J37/28 , H01L21/66
摘要： PURPOSE:To improve defect detecting sensitivity by irradiating an accelerated electron beam while scanning it on a semiconductor crystal surface to generate an exciting current, measuring a variation in the current due to the electrically active crystal defect, and then altering a picture signal to a digital signal to store it when the defect is observed as a picture. CONSTITUTION:A video signal from an amplifier 6 is synchronized with a synchronizing signal from a scan synchronizing signal generator 4, converted by an A/D converter 8 to a digital signal, and input to a calculator 9. The calculator 9 stores the digitized video signals at each one screen, converts the to analog signals by a D/A converter 10, input to an intensity modulation input of a CRT 7, a synchronizing signal from the generator 4 is input to the synchronous input of the CRT 7, and displayed as a calculated picture image. Thus, a large difference of an S/N ratio when N pieces of the stored pictures are stored is generated from S/N ratio when each screen is displayed on the CRT without storing, and the crystal can be accurately evaluated for its characteristics.

85. 发明专利

JPS62246894A METHOD AND APPARATUS FOR PRODUCING SINGLE CRYSTAL 失效
公开(公告)号：JPS62246894A
公开(公告)日：1987-10-28
申请号：JP8756486
申请日：1986-04-15
申请人： KYUSHU DENSHI KINZOKU KK
发明人： KOSHIO SHUHEI
IPC分类号： C30B15/08 , C30B29/06 , H01L21/18 , H01L21/208
摘要： PURPOSE:To increase the growing rate of a crystal and to reduce raw material and initial cost at the time of growing the single crystal by melting the raw material with a crucible, allowing the melt to flow down from the crucible to bring the melt into contact with a seed crystal, then detaching the crucible and the seed crystal in a vertical direction while relatively rotating the same. CONSTITUTION:The raw material polycrystal 4 is melted in the crucible 2 and the molten raw material is allowed to flow down from the crucible 2 so as to contact the seed crystal 8. While the seed crystal 8 is rotated relatively with the crucible 2, the seed crystal is lowered to grow the single crystal 5 on the seed crystal 8. The lumped granular polycrystal is usable as the raw material according to the above-mentioned growing method and therefore, the cost of the raw material is reduced and in addition, the single crystal having the desired specific resistance is produced by doping of O2 or selection of the raw material.

86. 发明专利

JPS62128520A SEMICONDUCTOR WAFER AND MANUFACTURE THEREOF 失效
公开(公告)号：JPS62128520A
公开(公告)日：1987-06-10
申请号：JP26983885
申请日：1985-11-29
申请人： KYUSHU DENSHI KINZOKU KK
发明人： YOSHIHARU TETSUJIROU , KAMISE HARUO
IPC分类号： H01L21/205 , H01L21/302 , H01L21/314
摘要： PURPOSE:To prevent contamination resulting from an Si lump particulate matter, and to improve yield largely by forming a blocking film for obviating autodoping onto the back except a peripheral section. CONSTITUTION:A peripheral section is bevelled from upper and lower sections in the circumferential surface of a wafer 1, the circumferential surface of the wafer consists of inclined planes 1a, 1b and arcuate sections 1c taking approximately arcuate shapes tying the outer end edges of both inclined planes 1a, 1b, and a blocking film 2, which is made of SiO2 and thickness thereof extends over approximately 0.1-1mum, is formed on the back. According to a manufacturing process, the periphery is bevelled and the inclined planes 1a, 1b and the arcuate sections 1c are shaped previously in the wafer 1, and the blocking film 2 is attached. The blocking film 2 formed up to the circumferential surface containing at least inclined planes 1a, 1b and arcuate sections 1c of the wafer 1 or the peripheral section of the back of the wafer 1 exceeding the circumferential surface, a section by approximately 0-5mm to the central side from end edge sections, is removed. A main surface 1d is finished in a specular manner. Accordingly, since there is no blocking layer even when a reaction gas is brought into contact with the circumferential surface of the wafer in the process of epitaxial growth, no Si lump particle is formed, thus preventing contamination resulting from an adhesion onto the main surface of the wafer of lump particulate silicon.

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