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1. 发明专利

JPS63226030A MANUFACTURE OF SEMICONDUCTOR SUBSTRATE 失效
公开(公告)号：JPS63226030A
公开(公告)日：1988-09-20
申请号：JP22364187
申请日：1987-09-07
申请人： KYUSHU DENSHI KINZOKU KK , OSAKA TITANIUM
发明人： HORAI MASATAKA , NARUTOMI TOSHIO , OKA YASUNORI , USO NAOTO
IPC分类号： H01L21/322
摘要： PURPOSE:To prevent any dusting from occurring in later processes by a method wherein a distorted layer is formed on the rear of raw material mechanically or by laser beam irradiation to be removed within specified range (thickness) by a chemical process. CONSTITUTION:A distorted layer is formed on the rear of a raw material mechanically or by laser beam irradiation. Then, the rear distorted layer is removed in etching level within the range of 200-5000Angstrom . Thus, the least surface stained semiconductor substrate can be formed without lessening the gettering effect so that the substrate may be adapted for several types of devices by selecting pertinent combination of distortion level and etching level.

2. 发明专利

JPH0573344B2 失效
公开(公告)号：JPH0573344B2
公开(公告)日：1993-10-14
申请号：JP19417587
申请日：1987-08-03
申请人： KYUSHU DENSHI KINZOKU KK , OSAKA TITANIUM
发明人： MYAZAKI MORIMASA , HORAI MASATAKA
IPC分类号： H01L21/66 , G01R31/26

3. 发明专利

JP2521007B2 失效
公开(公告)号：JP2521007B2
公开(公告)日：1996-07-31
申请号：JP17223792
申请日：1992-06-30
申请人： KYUSHU DENSHI KINZOKU KK , SUMITOMO SHICHITSUKUSU KK
发明人： HORAI MASATAKA , KOIKE TAKASHI
IPC分类号： C30B15/20 , C30B29/06 , H01L21/208

4. 发明专利

JP2560178B2 失效
公开(公告)号：JP2560178B2
公开(公告)日：1996-12-04
申请号：JP19657692
申请日：1992-06-29
申请人： KYUSHU DENSHI KINZOKU KK , SUMITOMO SHICHITSUKUSU KK
发明人： HORAI MASATAKA , ADACHI HISASHI , NISHIKAWA HIDESHI , SANO MASAKAZU
IPC分类号： H01L21/02 , H01L21/205 , H01L21/30 , H01L21/322 , H01L21/324

5. 发明专利

JPH04206942A MEASURING METHOD FOR TEMPERATURE DISTRIBUTION OF SUSCEPTOR AND SEMICONDUCTOR SUBSTRATE FOR MONITOR 失效
公开(公告)号：JPH04206942A
公开(公告)日：1992-07-28
申请号：JP33857290
申请日：1990-11-30
申请人： KYUSHU ELECTRON METAL , OSAKA TITANIUM
发明人： ADACHI HISASHI , HORAI MASATAKA
IPC分类号： H01L21/66 , H01L21/205
摘要： PURPOSE:To detect temperature distribution within a substrate and moreover detect temperature distribution on a susceptor on which a substrate has been placed from moving distance of dislocation by executing heat processing to the substrate on which pressure indentations are given in the desired positions and then observing moving distance of dislocation. CONSTITUTION:Immediately after pressure indentations are given on the surface of silicon semiconductor substraste, crystal structure dislocates in the vicinity of the pressure indentations due to an damage. When this wafer is subjected to a high temperature process, it is attempted that crystal structure is to be recovered by discharging dislocation from the pressure indentation field, but if the substrate 1 under the heat processing is heated unevenly, a thermal stress is generated within the substrate. This thermal stress accelerates discharging of dislocation from the pressure indentation field and thereby elongates the moving distance of dislocation as much as that shared by the thermal stress. With observation of moving distance of this dislocation, temperature distribution within the substrate and that on the susceptor can be detected. Therefore, temperature distribution on the susceptor can be made uniform by controlling a heater apparatus of the susceptor. Moreover, in the heating furnace, the optimum carrying speed can be determined.

6. 发明专利

JPH04206943A SUSCEPTOR TEMPERATURE EQUALIZING METHOD 失效
公开(公告)号：JPH04206943A
公开(公告)日：1992-07-28
申请号：JP33857490
申请日：1990-11-30
申请人： KYUSHU ELECTRON METAL , OSAKA TITANIUM
发明人： ADACHI HISASHI , HORAI MASATAKA , MATSUDA MASAHIKO
IPC分类号： G01R31/26 , H01L21/205 , H01L21/66
摘要： PURPOSE:To equalize temperature distribution on a susceptor by determining temperature distribution on a susceptor and previously controlling a heater apparatus of the susceptor from a moving distance of dislocation generated from the pressure indentation through the heat treatment. CONSTITUTION:For example, after completing the predetermined heat treatment within a vapor growth apparatus using a semiconductor substrate for monitor having a pressure indentation at the predetermined location, a temperature distribution deviation map of substrate is created from the moving distance of dislocation initiating from the pressure indentation, heating and cooling of the required area of susceptor (2) are determined based on the temperature distribution map in the susceptor (2), a high frequency oscillation coil (4) in the vicinity of the part to be heated is placed proximity to the susceptor (2) corresponding thereto and the high frequency oscillation coil (4) is separated from the part to be cooled, on the other hand, and uniformity of temperature in the susceptor (2) can be maintained in any time during temperature rise or temperature drop, even on the occasion of holding the temperature within the predetermined value during the vapor growth period.

7. 发明专利

JPS6437843A METHOD AND DEVICE FOR MEASURING LIFETIME OF SEMICONDUCTOR 失效
公开(公告)号：JPS6437843A
公开(公告)日：1989-02-08
申请号：JP19417587
申请日：1987-08-03
申请人： KYUSHU ELECTRON METAL , OSAKA TITANIUM
发明人： MIYAZAKI MORIMASA , HORAI MASATAKA
IPC分类号： H01L21/66 , G01R31/26
摘要： PURPOSE:To prevent carrier recombination on the surface of a sample by simple constitution, and to enable measurement in a short time without contamination, etc., by measuring the lifetime of a semiconductor through a photoconductive attenuation method under the state in which an electric field is applied and carriers are driven out to the end section of a sample semiconductor. CONSTITUTION:An electric field is given by lower and upper electrode plates 11, 12 driven by a DC power 13, excess carriers are driven out to the end section of an Si wafer as a sample, and recombination on the surface of the wafer 9 is prevented. Consequently, pretreatment in which the wafer is thermally oxidized and an oxide film is attached is unnecessitated, and the electric field is applied and the lifetime of the wafer 9 is measured through a photoconductive attenuation method through pulse-beam application by an irradiation light source 2, a reflecting plate 8, a circulator 5, a crystal detector 6, etc. Carrier recombination is prevented without requiring pretreatment according to simple constitution in which the electrode plates for generating the electric field is mounted, thus measuring the lifetime in a short time without contamination, etc., by pretreatment.

8. 发明专利

JPH02156636A COATING OF SOLUBLE METAL SALT ON SEMICONDUCTOR SUBSTRATE 失效
公开(公告)号：JPH02156636A
公开(公告)日：1990-06-15
申请号：JP31134088
申请日：1988-12-09
申请人： KYUSHU ELECTRON METAL , OSAKA TITANIUM
发明人： HORAI MASATAKA , OKA YASUNORI
IPC分类号： G01N1/00 , G01N1/28 , H01L21/225 , H01L21/306 , H01L21/322 , H01L21/66
摘要： PURPOSE:To control metal impurities on a semiconductor substrate to a desired amount by a method wherein a solution containing the metal impurities of a definite concentration is dripped onto the substrate, the surface of the semiconductor substrate is covered uniformly with the solution, this state is kept tor a definite time and the excess solution remaining on the surface of the substrate is removed while the semiconductor substrate is turned. CONSTITUTION:A semiconductor substrate 1 is fixed by using a vacuum chuck 4 of a spin coater 3; an aqueous solution 5 containing metal impurities of a definite concentration is dripped onto the surface of the semiconductor substrate 1. This dripped aqueous solution 5 is spread uniformly on the whole surface of the substrate 1 ; it is held by a surface tension at an end edge of the substrate 1 without flowing down from the end edge. When this state is kept for a prescribed time, the metal impurities 6 in the aqueous solution 5 are adsorbed to a spontaneous oxide film 2 at a definite rate. In succession, when the spin coater 3 is turned at high speed, the excess contaminated aqueous solution 5 on the substrate 1 is removed by a centrifugal force and the substrate 1 is dried. As a result, the impurities 6 which have been adsorbed at the definite rate are left on the substrate 1.

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