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81. 发明申请

US20090053426A1 COBALT DEPOSITION ON BARRIER SURFACES 有权
标题翻译：铜棒沉积在阻挡层表面上
公开(公告)号：US20090053426A1
公开(公告)日：2009-02-26
申请号：US12201976
申请日：2008-08-29
申请人： JIANG LU , Hyoung-Chan Ha , Paul Ma , Seshadri Ganguli , Joseph F. Aubuchon , Sang Ho Yu , Murali K. Narasimhan
发明人： JIANG LU , Hyoung-Chan Ha , Paul Ma , Seshadri Ganguli , Joseph F. Aubuchon , Sang Ho Yu , Murali K. Narasimhan
IPC分类号： B05D5/12 , B05D3/06
CPC分类号： H01L21/76871 , C23C16/16 , C23C16/18 , C23C16/42 , C23C16/56 , H01L21/28556 , H01L21/28562 , H01L21/28568 , H01L21/76846 , H01L21/76862 , H01L21/76864 , H01L21/76873
摘要： Embodiments of the invention provide processes for depositing a cobalt layer on a barrier layer and subsequently depositing a conductive material, such as copper or a copper alloy, thereon. In one embodiment, a method for depositing materials on a substrate surface is provided which includes forming a barrier layer on a substrate, exposing the substrate to dicobalt hexacarbonyl butylacetylene (CCTBA) and hydrogen to form a cobalt layer on the barrier layer during a vapor deposition process (e.g., CVD or ALD), and depositing a conductive material over the cobalt layer. In some examples, the barrier layer and/or the cobalt layer may be exposed to a gas or a reagent during a treatment process, such as a thermal process, an in situ plasma process, or a remote plasma process.
摘要翻译：本发明的实施方案提供了在阻挡层上沉积钴层并随后在其上沉积诸如铜或铜合金的导电材料的方法。在一个实施例中，提供了一种在衬底表面上沉积材料的方法，其包括在衬底上形成阻挡层，将衬底暴露于六羰基丁基乙炔二钴（CCTBA）和氢，以在气相沉积期间在阻挡层上形成钴层工艺（例如，CVD或ALD），以及在钴层上沉积导电材料。在一些实例中，阻挡层和/或钴层可以在诸如热处理，原位等离子体处理或远程等离子体处理的处理过程中暴露于气体或试剂。

82. 发明授权

US07429361B2 Method and apparatus for providing precursor gas to a processing chamber 有权
标题翻译：用于向处理室提供前体气体的方法和装置
公开(公告)号：US07429361B2
公开(公告)日：2008-09-30
申请号：US11613153
申请日：2006-12-19
申请人： Seshadri Ganguli , Ling Chen , Vincent W. Ku
发明人： Seshadri Ganguli , Ling Chen , Vincent W. Ku
IPC分类号： B01D7/00
CPC分类号： C23C16/45544 , C23C16/18 , C23C16/34 , C23C16/4402 , C23C16/4481 , C23C16/4482 , C23C16/4487 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： In one embodiment, an apparatus for generating a gaseous chemical precursor used in a vapor deposition processing system is provided which includes a canister comprising a sidewall, a top, and a bottom encompassing an interior volume therein, an inlet port and an outlet port in fluid communication with the interior volume, and an inlet tube extending from the inlet port into the canister. The apparatus further may contain a plurality of baffles within the interior volume extending between the top and the bottom of the canister, and a precursor slurry contained within the interior volume, wherein the precursor slurry contains a solid precursor material and a thermally conductive material that is unreactive towards the solid precursor material. In one example, the solid precursor material solid precursor material is pentakis(dimethylamino) tantalum.
摘要翻译：在一个实施方案中，提供了一种用于产生气相沉积处理系统中使用的气态化学前体的装置，其包括一个罐，该罐包括侧壁，顶部和包围内部容积的底部，入口和出口在流体与内部容积的连通，以及从入口延伸到罐中的入口管。该装置还可以在内部容积内容纳多个挡板，其在罐的顶部和底部之间延伸，以及包含在内部容积内的前体浆料，其中前体浆料包含固体前体材料和导热材料，对固体前体材料没有反应。在一个实例中，固体前体材料固体前体材料是五（二甲基氨基）钽。

83. 发明申请

US20070235085A1 Chemical delivery apparatus for CVD or ALD 有权
标题翻译：用于CVD或ALD的化学输送装置
公开(公告)号：US20070235085A1
公开(公告)日：2007-10-11
申请号：US11394448
申请日：2006-03-30
申请人： Norman Nakashima , Christophe Marcadal , Seshadri Ganguli , Paul Ma , Schubert Chu
发明人： Norman Nakashima , Christophe Marcadal , Seshadri Ganguli , Paul Ma , Schubert Chu
IPC分类号： F16K3/36 , F16K11/20
CPC分类号： C23C16/4481 , C23C16/4408 , C23C16/45561 , Y10T137/3127 , Y10T137/4259 , Y10T137/87249 , Y10T137/877
摘要： An ampoule assembly is configured with a bypass line and valve to allow the purging of the lines and valves connected to the ampoule. The ampoule assembly, in one embodiment, includes an ampoule, an inlet line, an outlet line, and a bypass line connected between the inlet line and the outlet line, the bypass line having a shut-off valve disposed therein to fluidly couple or decouple the inlet line and the outlet line. The shut-off valve disposed in the bypass line may be remotely controllable. Also, additional remotely controllable shut-off valves may be provided in the inlet and the outlet lines.
摘要翻译：安瓿组件配置有旁通管线和阀，以允许清洗连接到安瓿的管线和阀。在一个实施例中，安瓿组件包括安瓿瓶，入口管线，出口管线和连接在入口管线和出口管线之间的旁通管线，旁通管线具有设置在其中的截止阀以流体耦合或解耦入口管线和出口管路。设置在旁路管路中的截止阀可以是远程控制的。此外，可以在入口和出口管线中设置附加的可远程控制的截止阀。

84. 发明申请

US20050095859A1 Precursor delivery system with rate control 审中-公开
标题翻译：带速率控制的前置发送系统
公开(公告)号：US20050095859A1
公开(公告)日：2005-05-05
申请号：US10700328
申请日：2003-11-03
申请人： Ling Chen , Phillip Kang , Seshadri Ganguli
发明人： Ling Chen , Phillip Kang , Seshadri Ganguli
IPC分类号： C23C16/448 , C23C16/52 , H01L21/285 , H01L21/302 , H01L21/461
CPC分类号： C23C16/52 , C23C16/4481 , H01L21/28556
摘要： A method and apparatus for a gas delivery system to deliver a precursor from a vessel to a process chamber via a process gas produced by flowing a first carrier gas into the vessel and combining with a second carrier gas flowing through a bypass around the vessel and a precursor monitoring apparatus disposed between the process chamber and the vessel. The precursor monitoring apparatus has a gas analyzer to generate a first signal indicative of a concentration of the precursor in the process gas or to a signal indicative of a flow rate of the process gas.
摘要翻译：一种用于气体输送系统的方法和装置，用于通过将第一载气流入容器并与流过绕容器的旁路的第二载气合并，将容器中的前体从容器输送到处理室，前体监测装置设置在处理室和容器之间。前体监测装置具有气体分析器，以产生指示处理气体中的前体浓度的第一信号或指示处理气体的流量的信号。

85. 发明授权

US06772072B2 Method and apparatus for monitoring solid precursor delivery 有权
公开(公告)号：US06772072B2
公开(公告)日：2004-08-03
申请号：US10200613
申请日：2002-07-22
申请人： Seshadri Ganguli , Vincent W. Ku , Hua Chung , Ling Chen
发明人： Seshadri Ganguli , Vincent W. Ku , Hua Chung , Ling Chen
IPC分类号： G06F1900
CPC分类号： C23C16/52 , C23C16/4481
摘要： A method and apparatus for monitoring the delivery of a solid precursor from a vessel to a process chamber via a process gas produced by flowing a carrier gas into the vessel is provided. The precursor typically changes state from a solid to a gas (vapor) through a sublimation process within the chamber. The apparatus comprises a gas analyzer to generate a first signal indicative of a density of the precursor in the process gas and a controller. The controller receives the first signal and a second signal indicative of a volume flow rate of the process gas or the carrier gas and calculates a mass flow rate and/or a total amount consumed of the precursor based on the first and second signals. The controller may calculate an amount precursor remaining in the vessel based on the total amount consumed and an initial amount. The amount of precursor remaining in the vessel may be used by an operator to efficiently schedule replacement or replenishment of the precursor in an effort to minimize material waste and processing down time.

86. 发明授权

US06660622B2 Process for removing an underlying layer and depositing a barrier layer in one reactor 有权
标题翻译：用于去除下层并在一个反应器中沉积阻挡层的方法
公开(公告)号：US06660622B2
公开(公告)日：2003-12-09
申请号：US10290746
申请日：2002-11-07
申请人： Ling Chen , Seshadri Ganguli , Wei Cao , Christophe Marcadal
发明人： Ling Chen , Seshadri Ganguli , Wei Cao , Christophe Marcadal
IPC分类号： H01L213205
CPC分类号： H01L21/76844 , H01L21/2855 , H01L21/28556 , H01L21/76843 , H01L21/76846 , H01L21/76856 , H01L21/76865
摘要： A method of forming barrier layers in a via hole extending through an inter-level dielectric layer and including a preformed first barrier coated onto the bottom and sidewalls of the via holes. In a single plasma sputter reactor, a first step sputters the wafer rather than the target with high energy ions to remove the barrier layer from the bottom of the via but not from the sidewalls and a second step sputter deposits a second barrier layer, for example of Ta/TaN, onto the via bottom and sidewalls. The two steps may be differentiated by power applied to the target, by chamber pressure, or by wafer bias. The second step may include the simultaneous removal of the first barrier layer from the via bottom and sputter deposition of the second barrier layer onto the via sidewalls.
摘要翻译：在穿过层间电介质层的通孔中形成阻挡层的方法，包括涂覆在通孔的底部和侧壁上的预先形成的第一屏障。在单个等离子体溅射反应器中，第一步骤以高能离子将晶片而不是目标物喷射，以从通孔的底部除去阻挡层，而不是从侧壁排出，第二步骤溅射沉积第二阻挡层，例如的Ta / TaN，通过底部和侧壁。这两个步骤可以通过施加到靶，通过室压力或通过晶片偏置的功率来区分。第二步骤可以包括从通孔底部同时移除第一阻挡层并将第二阻挡层溅射到通孔侧壁上。

87. 发明授权

US06498091B1 Method of using a barrier sputter reactor to remove an underlying barrier layer 有权
标题翻译：使用阻挡溅射反应器去除下面的阻挡层的方法
公开(公告)号：US06498091B1
公开(公告)日：2002-12-24
申请号：US09704161
申请日：2000-11-01
申请人： Ling Chen , Seshadri Ganguli , Wei Cao , Christophe Marcadal
发明人： Ling Chen , Seshadri Ganguli , Wei Cao , Christophe Marcadal
IPC分类号： H01L214763
CPC分类号： H01L21/76844 , H01L21/2855 , H01L21/28556 , H01L21/76843 , H01L21/76846 , H01L21/76856 , H01L21/76865
摘要： A method and resultant structure of forming barrier layers in a via hole extending through an inter-level dielectric layer. A first barrier layer of TiSiN is conformally coated by chemical vapor deposition onto the bottom and sidewalls of the via holes and in the field area on top of the dielectric layer. A single plasma sputter reactor is used to perform two steps. In the first step, the wafer rather than the target is sputtered with high energy ions to remove the barrier layer from the bottom of the via but not from the sidewalls. In the second step, a second barrier layer, for example of Ta/TaN, is sputter deposited onto the via bottom and sidewalls. The two steps may be differentiated by power applied to the target, by chamber pressure, or by wafer bias. The second step may include the simultaneous removal of the first barrier layer from the via bottom and sputter deposition of the second barrier layer onto the via sidewalls. Chamber conditions in the first step, including balancing neutrals and ions, may be controlled to remove the first barrier layer from the via bottom while leaving it on the more exposed the field area.
摘要翻译：在延伸穿过层间电介质层的通孔中形成势垒层的方法和结果。 TiSiN的第一阻挡层通过化学气相沉积保形地涂覆在通孔的底部和侧壁以及介电层顶部的场区中。使用单个等离子体溅射反应器执行两个步骤。在第一步骤中，用高能离子溅射晶片而不是靶，以从通孔的底部除去阻挡层，而不是从侧壁去除阻挡层。在第二步骤中，例如Ta / TaN的第二阻挡层被溅射沉积到通孔底部和侧壁上。这两个步骤可以通过施加到靶，通过室压力或通过晶片偏置的功率来区分。第二步骤可以包括从通孔底部同时移除第一阻挡层并将第二阻挡层溅射到通孔侧壁上。可以控制第一步骤中的室内条件，包括平衡中性粒子和离子，以将第一阻挡层从通孔底部移除，同时将其留在暴露在场区域上。

88. 发明授权

US6110530A CVD method of depositing copper films by using improved organocopper precursor blend 失效
标题翻译：通过使用改进的有机铜前体共混物沉积铜膜的CVD方法
公开(公告)号：US6110530A
公开(公告)日：2000-08-29
申请号：US339970
申请日：1999-06-25
申请人： Ling Chen , Seshadri Ganguli , Bo Zheng , Samuel Wilson , Christophe Marcadal
发明人： Ling Chen , Seshadri Ganguli , Bo Zheng , Samuel Wilson , Christophe Marcadal
IPC分类号： C23C16/18 , C23C16/448
CPC分类号： C23C16/18 , C23C16/4485
摘要： Copper films having improved properties are deposited by chemical vapor deposition from an organocopper precursor of a blend of copper hexafluoroacetylacetonate trimethylvinylsilane and from about 1.0 to 5.0 percent by weight of trimethylvinylsilane that is vaporized in a vaporizer, and passed into a chemical vapor deposition chamber. Separately up to about 2 percent by weight of the precursor blend of water vapor is added directly to the chamber.
摘要翻译：具有改善性能的铜膜通过化学气相沉积从六氟乙酰丙酮铜三甲基乙烯基硅烷铜共混物的有机铜前体和约1.0-5.0重量％的在汽化器中汽化的三甲基乙烯基硅烷沉积，并通入化学气相沉积室。将高达约2重量％的水蒸汽的前体共混物直接加入到室中。

89. 发明授权

US09926639B2 Methods for forming barrier/seed layers for copper interconnect structures 有权
公开(公告)号：US09926639B2
公开(公告)日：2018-03-27
申请号：US13167001
申请日：2011-06-23
申请人： Hoon Kim , Wei Ti Lee , Sang Ho Yu , Seshadri Ganguli , Hyoung-Chan Ha , Sang Hyeob Lee
发明人： Hoon Kim , Wei Ti Lee , Sang Ho Yu , Seshadri Ganguli , Hyoung-Chan Ha , Sang Hyeob Lee
IPC分类号： C25D5/02 , H01L21/768 , H01L21/285
CPC分类号： C25D5/02 , H01L21/2855 , H01L21/28556 , H01L21/28562 , H01L21/76831 , H01L21/76846 , H01L21/76864 , H01L21/76873 , H01L21/76898
摘要： Methods for forming barrier/seed layers for interconnect structures are provided herein. In some embodiments, a method of processing a substrate having an opening formed in a first surface of the substrate, the opening having a sidewall and a bottom surface, the method may include forming a layer comprising manganese (Mn) and at least one of ruthenium (Ru) or cobalt (Co) on the sidewall and bottom surface of the opening; and depositing a conductive material on the layer to fill the opening. In some embodiments, one of ruthenium (Ru) or cobalt (Co) is deposited on the sidewall and bottom surface of the opening. The materials may be deposited by chemical vapor deposition (CVD) or by physical vapor deposition (PVD).

90. 发明授权

US09051641B2 Cobalt deposition on barrier surfaces 有权
标题翻译：阻挡表面上的钴沉积
公开(公告)号：US09051641B2
公开(公告)日：2015-06-09
申请号：US12201976
申请日：2008-08-29
申请人： Jiang Lu , Hyoung-Chan Ha , Paul Ma , Seshadri Ganguli , Joseph F. Aubuchon , Sang Ho Yu , Murali K. Narasimhan
发明人： Jiang Lu , Hyoung-Chan Ha , Paul Ma , Seshadri Ganguli , Joseph F. Aubuchon , Sang Ho Yu , Murali K. Narasimhan
IPC分类号： B05D5/12 , C23C16/16 , C23C16/18 , C23C16/42 , C23C16/56 , H01L21/285 , H01L21/768
CPC分类号： H01L21/76871 , C23C16/16 , C23C16/18 , C23C16/42 , C23C16/56 , H01L21/28556 , H01L21/28562 , H01L21/28568 , H01L21/76846 , H01L21/76862 , H01L21/76864 , H01L21/76873
摘要： Embodiments of the invention provide processes for depositing a cobalt layer on a barrier layer and subsequently depositing a conductive material, such as copper or a copper alloy, thereon. In one embodiment, a method for depositing materials on a substrate surface is provided which includes forming a barrier layer on a substrate, exposing the substrate to dicobalt hexacarbonyl butylacetylene (CCTBA) and hydrogen to form a cobalt layer on the barrier layer during a vapor deposition process (e.g., CVD or ALD), and depositing a conductive material over the cobalt layer. In some examples, the barrier layer and/or the cobalt layer may be exposed to a gas or a reagent during a treatment process, such as a thermal process, an in situ plasma process, or a remote plasma process.
摘要翻译：本发明的实施方案提供了在阻挡层上沉积钴层并随后在其上沉积诸如铜或铜合金的导电材料的方法。在一个实施例中，提供了一种在衬底表面上沉积材料的方法，其包括在衬底上形成阻挡层，将衬底暴露于六羰基丁基乙炔二钴（CCTBA）和氢，以在气相沉积期间在阻挡层上形成钴层工艺（例如，CVD或ALD），以及在钴层上沉积导电材料。在一些实例中，阻挡层和/或钴层可以在诸如热处理，原位等离子体处理或远程等离子体处理的处理过程中暴露于气体或试剂。

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