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    • 81. 发明授权
    • Photodiode module and apparatus including multiple photodiode modules
    • 光电二极管模块和包括多个光电二极管模块的设备
    • US08202755B2
    • 2012-06-19
    • US13108733
    • 2011-05-16
    • David FattalJason BlackstockDuncan Stewart
    • David FattalJason BlackstockDuncan Stewart
    • H01L31/18
    • H04N1/053H04N2201/04787H04N2201/04793H04N2201/04794
    • Various embodiments of the present invention are directed to a photodiode module including a structure configured to selectively couple light to a dielectric-surface mode of a photonic crystal of the photodiode module. In one embodiment of the present invention, a photodiode module includes a semiconductor structure having a p-region and an n-region. The photodiode module further includes a photonic crystal having a surface positioned adjacent to the semiconductor structure. A diffraction grating of the photodiode module may be positioned and configured to selectively couple light incident on the diffraction grating to a dielectric-surface mode associated with the surface of the photonic crystal. In another embodiment of the present invention, a photodiode apparatus includes multiple, stacked photodiode modules, each of which is configured to selectively absorb light at a selected wavelength or range of wavelengths.
    • 本发明的各种实施例涉及一种光电二极管模块,其包括被配置为选择性地将光耦合到光电二极管模块的光子晶体的电介质表面模式的结构。 在本发明的一个实施例中,光电二极管模块包括具有p区和n区的半导体结构。 光电二极管模块还包括具有邻近半导体结构定位的表面的光子晶体。 可以将光电二极管模块的衍射光栅定位和配置为将入射在衍射光栅上的光选择性地耦合到与光子晶体的表面相关联的电介质表面模式。 在本发明的另一实施例中,光电二极管装置包括多个堆叠的光电二极管模块,每个光电二极管模块被配置为选择性地吸收所选择的波长或波长范围的光。
    • 86. 发明申请
    • Silicon-Based Memristive Device
    • 硅基记忆装置
    • US20110240941A1
    • 2011-10-06
    • US13139557
    • 2009-01-15
    • Matthew D. PickettDuncan Stewart
    • Matthew D. PickettDuncan Stewart
    • H01L45/00G11C11/00
    • H01L27/101G11C13/00G11C13/0069G11C2013/009G11C2213/33G11C2213/77H01L27/2463H01L45/085H01L45/1206H01L45/1233H01L45/148
    • A memristive device (100) includes a first and a second electrode (110, 115); a silicon memristive matrix (105) interposed between the first electrode (110) and the second electrode (115); and a mobile dopant species (210, 215) within the silicon memristive matrix (105) which moves in response to a programming electrical field and remains substantially in place after the removal of the programming electrical field. A method for using a crossbar architecture (610) containing a silicon memristive matrix (105) includes: applying a programming electrical field by applying a voltage bias across a first conductor (602) and a second conductor (604); a silicon memristive matrix (105, 606) containing mobile dopants (210, 215) being interposed between the first conductor (602) and the second conductor (604), the programming voltage repositioning the mobile dopants (210, 215) within the silicon memristive matrix (105, 606); and reading a state of the silicon memristive matrix (105, 606) by applying a reading energy across the silicon memristive matrix (105, 606), the reading energy producing a measurable indication of the state of the silicon memristive matrix (105, 606).
    • 忆阻器(100)包括第一和第二电极(110,115); 插入在所述第一电极(110)和所述第二电极(115)之间的硅忆阻矩阵(105); 以及在所述硅忆阻矩阵(105)内的移动掺杂剂物质(210,215),其响应于编程电场而移动并且在去除所述编程电场之后保持基本上就位。 一种使用包含硅忆阻矩阵(105)的交叉结构(610)的方法包括:通过跨第一导体(602)和第二导体(604)施加电压偏置来施加编程电场; 包含位于第一导体(602)和第二导体(604)之间的移动掺杂剂(210,215)的硅忆阻矩阵(105,606),所述编程电压重新定位硅忆阻器内的移动掺杂剂(210,215) 矩阵(105,606); 以及通过在所述硅忆阻矩阵(105,606)上施加读取能量来读取所述硅忆阻矩阵(105,606)的状态,所述读取能量产生所述硅忆阻矩阵(105,606)的状态的可测量指示, 。
    • 88. 发明申请
    • Light-Emitting Devices
    • 发光装置
    • US20110180782A1
    • 2011-07-28
    • US13002897
    • 2008-07-25
    • David A. FattalDuncan Stewart
    • David A. FattalDuncan Stewart
    • H01L33/06B82Y99/00
    • H01L33/06H01L33/08
    • Various embodiments of the present invention are directed to semiconductor light-emitting devices that provide energy efficient, high-speed modulation rates in excess of 10 Gbits/sec. These devices include a light-emitting layer embedded between two relatively thicker semiconductor layers. The energy efficient, high-speed modulation rates result from the layers adjacent to the light-emitting layer being composed of semiconductor materials with electronic states that facilitate injection of carriers into the light-emitting layer for light emission when an appropriate light-emitting voltage is applied and facilitate the removal of carriers when an appropriate light-quenching voltage is applied.
    • 本发明的各种实施例涉及提供超过10G比特/秒的节能高速调制速率的半导体发光器件。 这些器件包括嵌入两个较厚的半导体层之间的发光层。 能量效率高的调制速率是由与发光层相邻的层组成的,这些半导体材料由具有电子状态的半导体材料构成,当电流为适当的发光电压时,有助于将载流子注入发光层进行发光 当施加适当的光熄灭电压时,施加并促进载体的移除。