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1. 发明授权

US09664560B2 Double-grating surface-enhanced Raman spectroscopy 有权
公开(公告)号：US09664560B2
公开(公告)日：2017-05-30
申请号：US14381009
申请日：2012-03-06
申请人： R. Stanley Williams , Zhiyong Li
发明人： R. Stanley Williams , Zhiyong Li
IPC分类号： G01J3/02 , G01J3/44 , G01N21/65
CPC分类号： G01J3/0205 , G01J3/44 , G01J3/4412 , G01N21/658 , G01N2201/06113 , G01N2201/068
摘要： A double-grating surface-enhanced Raman spectrometer. The spectrometer includes a substrate; a plurality of nanofingers carried by the substrate, the nanofingers arranged to define a first optical grating; a light source oriented to project a beam of light toward the first optical grating; a second optical grating oriented to receive a beam of light scattered from the first optical grating; and a detector oriented to receive a beam of light scattered from the second optical grating.

2. 发明授权

US09324718B2 Three dimensional multilayer circuit 有权
标题翻译：三维多层电路
公开(公告)号：US09324718B2
公开(公告)日：2016-04-26
申请号：US13260019
申请日：2010-01-29
申请人： Wei Wu , R. Stanley Williams
发明人： Wei Wu , R. Stanley Williams
IPC分类号： H01L25/00 , H03K19/177 , H01L21/46 , H01L21/4763 , H01L27/10 , H01L27/02 , H01L27/06 , H01L27/24
CPC分类号： H01L27/101 , H01L27/0207 , H01L27/0688 , H01L27/24
摘要： A three dimensional multilayer circuit (600) includes a plurality of crossbar arrays (512) made up of intersecting crossbar segments (410, 420) and programmable crosspoint devices (514) interposed between the intersecting crossbar segments (410, 420). Shift pins (505, 510) are used to shift connection domains (430) of the intersecting crossbar segments (410, 420) between stacked crossbar arrays (512) such that the programmable crosspoint devices (514) are uniquely addressed. The shift pins (505, 510) make electrical connections between crossbar arrays (512) by passing vertically between crossbar segments (410, 510) in the first crossbar array (512) and crossbar segments in a second crossbar array. A method for transforming multilayer circuits is also described.
摘要翻译：三维多层电路（600）包括由相交的横杆段（410,420）和插入在相交的横杆段（410,420）之间的可编程交叉点装置（514）组成的多个横杆阵列（512）。移位销（505,510）用于使堆叠的横杆阵列（512）之间的交叉横截面段（410,420）的连接区域（430）移位，使得可编程交叉点设备（514）被唯一地寻址。换档销（505,510）通过在第一交叉杆阵列（512）中的横杆段（410,510）和第二横杆阵列中的横杆段之间垂直地穿过横杆阵列（512）之间进行电连接。还描述了用于转换多层电路的方法。

3. 发明申请

US20150076438A1 NON-VOLATILE RESISTIVE MEMORY CELLS 有权
标题翻译：非挥发性电阻记忆细胞
公开(公告)号：US20150076438A1
公开(公告)日：2015-03-19
申请号：US14396406
申请日：2012-07-31
申请人： Hans S. Cho , Janice H. Nickel , R. Stanley Williams , Jaesung Roh , Jinwon Park , Choi Hyejung , Moonsig Joo , Jiwon Moon , Changgoo Lee , Yongsun Sohn , Jeongtae Kim
发明人： Hans S. Cho , Janice H. Nickel , R. Stanley Williams , Jaesung Roh , Jinwon Park , Choi Hyejung , Moonsig Joo , Jiwon Moon , Changgoo Lee , Yongsun Sohn , Jeongtae Kim
IPC分类号： H01L45/00
CPC分类号： H01L45/1233 , H01L27/101 , H01L27/2463 , H01L45/08 , H01L45/124 , H01L45/1253 , H01L45/146 , H01L45/1641 , H01L45/1675 , H01L45/1691
摘要： Examples of the present disclosure include non-volatile resistive memory cells and methods of forming the same. An example of a non-volatile resistive memory cell includes a first portion of the non-volatile resistive memory cell formed as a vertically-extending structure on a first electrode, where the first portion comprises at least one memristive material across a width of the vertically-extending structure. The non-volatile resistive memory cell also includes a second portion formed as a vertically-extending memristive material structure on at least one sidewall of the first portion.
摘要翻译：本公开的实例包括非易失性电阻存储器单元及其形成方法。非易失性电阻性存储单元的示例包括在第一电极上形成为垂直延伸结构的非易失性电阻性存储单元的第一部分，其中第一部分包括跨越垂直宽度的至少一个阻聚材料延伸结构。非易失性电阻性存储单元还包括在第一部分的至少一个侧壁上形成为垂直延伸的忆阻材料结构的第二部分。

4. 发明申请

US20150041751A1 CUSTOMIZABLE NONLINEAR ELECTRICAL DEVICES 有权
标题翻译：可定制非线性电气设备
公开(公告)号：US20150041751A1
公开(公告)日：2015-02-12
申请号：US14385544
申请日：2012-04-26
申请人： Minxian Max Zhang , Jianhua Yang , Gilberto Medeiros Ribeiro , R. Stanley Williams
发明人： Minxian Max Zhang , Jianhua Yang , Gilberto Medeiros Ribeiro , R. Stanley Williams
IPC分类号： H01L29/24 , H01L21/02 , H01L29/861 , H01L45/00 , H01L29/8605 , H01L29/92
CPC分类号： H01L29/24 , B82Y10/00 , G11C13/0007 , G11C13/003 , G11C2213/15 , G11C2213/72 , G11C2213/73 , G11C2213/74 , H01L21/02425 , H01L21/02565 , H01L21/02631 , H01L27/1021 , H01L27/2418 , H01L27/2463 , H01L29/0676 , H01L29/247 , H01L29/47 , H01L29/8605 , H01L29/861 , H01L29/8616 , H01L29/872 , H01L29/92 , H01L45/00 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625
摘要： In one example, a customizable nonlinear electrical device includes a first conductive layer, a second conductive layer, and a thin film metal-oxide layer sandwiched between the first conductive layer and the second conductive layer to form a first rectifying interface between the metal-oxide layer and the first conductive layer and a second rectifying interface between the metal-oxide layer and the second conductive layer. The metal-oxide layer includes an electrically conductive mixture of co-existing metal and metal oxides. A method forming a nonlinear electrical device is also provided.
摘要翻译：在一个示例中，可定制的非线性电气装置包括第一导电层，第二导电层和夹在第一导电层和第二导电层之间的薄膜金属氧化物层，以在金属氧化物之间形成第一整流界面层和第一导电层以及金属氧化物层和第二导电层之间的第二整流界面。金属氧化物层包括共存的金属和金属氧化物的导电混合物。还提供了形成非线性电气装置的方法。

5. 发明授权

US08885422B2 Hierarchical on-chip memory 有权
标题翻译：分层片上存储器
公开(公告)号：US08885422B2
公开(公告)日：2014-11-11
申请号：US13256242
申请日：2009-06-12
申请人： Gilberto Medeiros Ribeiro , R. Stanley Williams , Matthew D. Pickett
发明人： Gilberto Medeiros Ribeiro , R. Stanley Williams , Matthew D. Pickett
IPC分类号： G11C7/00 , G11C5/06 , G11C5/02
CPC分类号： G11C5/02 , G11C5/063 , G11C2213/71
摘要： A hierarchical on-chip memory (400) includes an area distributed CMOS layer (310) comprising input/output functionality and volatile memory and via array (325, 330), the area distributed CMOS layer (310) configured to selectively address the via array (325, 330). A crossbar memory (305) overlies the area distributed CMOS layer (310) and includes programmable crosspoint devices (315) which are uniquely accessed through the via array (325, 330). A method for utilizing hierarchical on-chip memory (400) includes storing frequently rewritten data in a volatile memory and storing data which is not frequently rewritten in a non-volatile memory (305), where the volatile memory is contained within an area distributed CMOS layer (310) and the non-volatile memory (305) is formed over and accessed through the area distributed CMOS layer (310).
摘要翻译：分层片上存储器（400）包括包括输入/输出功能的区域分布式CMOS层（310）和易失性存储器和通孔阵列（325,330），所述区域分布式CMOS层（310）被配置为选择性地寻址通孔阵列（325,330）。交叉开关存储器（305）覆盖区域分布式CMOS层（310），并且包括通过通孔阵列（325,330）唯一访问的可编程交叉点设备（315）。一种用于利用分层片上存储器（400）的方法包括：将经常重写的数据存储在易失性存储器中，并将非频繁重写的数据存储在非易失性存储器（305）中，其中易失性存储器包含在区域分布式CMOS 层（310）和非易失性存储器（305）形成在区域分布式CMOS层（310）上并通过区域分布式CMOS层（310）访问。

6. 发明申请

US20140304467A1 SHIFTABLE MEMORY EMPLOYING RING REGISTERS 有权
标题翻译：可移动存储器使用环形寄存器
公开(公告)号：US20140304467A1
公开(公告)日：2014-10-09
申请号：US14349352
申请日：2011-10-27
申请人： Matthew D. Pickett , R. Stanley Williams , Gilberto M. Ribeiro
发明人： Matthew D. Pickett , R. Stanley Williams , Gilberto M. Ribeiro
IPC分类号： G11C7/10 , G06F5/08
CPC分类号： G06F5/08 , G11C7/1012 , G11C7/1036 , G11C19/00 , G11C19/28 , G11C21/00
摘要： Shiftable memory employs ring registers to shift a contiguous subset of data words stored in the ring registers within the shiftable memory. A shiftable memory includes a memory having built-in word-level shifting capability. The memory includes a plurality of ring registers to store data words. A contiguous subset of data words is shiftable between sets of the ring registers of the plurality from a first location to a second location within the memory. The contiguous subset of data words has a size that is smaller than a total size of the memory. The memory shifts only data words stored inside the contiguous subset when the contiguous subset is shifted.
摘要翻译：可移动存储器使用振铃寄存器来移位存储在可移位存储器内的环形寄存器中的数据字的连续子集。可移位存储器包括具有内置字级移位能力的存储器。存储器包括多个用于存储数据字的环形寄存器。数据字的连续子集可在存储器内的第一位置到第二位置的多个环形寄存器的集合之间移位。数据字的连续子集具有小于存储器总大小的大小。当连续子集移位时，存储器仅移动存储在连续子集内的数据字。

7. 发明授权

US08766224B2 Electrically actuated switch 有权
标题翻译：电动开关
公开(公告)号：US08766224B2
公开(公告)日：2014-07-01
申请号：US11542986
申请日：2006-10-03
申请人： R. Stanley Williams
发明人： R. Stanley Williams
IPC分类号： H01L45/00
CPC分类号： H01L45/08 , G11C13/0007 , G11C13/0009 , G11C2213/52 , G11C2213/53 , G11C2213/56 , G11C2213/77 , H01L27/2463 , H01L45/1206 , H01L45/1233 , H01L45/14 , H01L45/145 , H01L45/146 , H01L45/147 , H03K17/00
摘要： An electrically actuated switch comprises a first electrode, a second electrode, and an active region disposed therebetween. The active region comprises at least one primary active region comprising at least one material that can be doped or undoped to change its electrical conductivity, and a secondary active region comprising at least one material for providing a source/sink of ionic species that act as dopants for the primary active region(s). Methods of operating the switch are also provided.
摘要翻译：电驱动开关包括第一电极，第二电极和设置在它们之间的有源区域。活性区域包括至少一个主要活性区域，其包含至少一种可被掺杂或未掺杂以改变其导电性的材料，以及包含至少一种材料的辅助活性区域，用于提供用作掺杂剂的离子物质的源/ 对于主要活动区域。还提供了操作开关的方法。

8. 发明授权

US08750024B2 Memcapacitor 有权
标题翻译：电容器
公开(公告)号：US08750024B2
公开(公告)日：2014-06-10
申请号：US13256245
申请日：2009-06-18
申请人： Alexandre M. Bratkovski , R. Stanley Williams
发明人： Alexandre M. Bratkovski , R. Stanley Williams
IPC分类号： G11C11/24
CPC分类号： G11C11/24 , G11C13/0002 , H01G4/1272 , H01G4/255 , H01G4/33 , H01L27/101 , H01L28/40
摘要： A memcapacitor device (100) includes a first electrode (104) and a second electrode (106) and a memcapacitive matrix (102) interposed between the first electrode (104) and the second electrode (106). Mobile dopants (111) are contained within the memcapacitive matrix (102) and are repositioned within the memcapacitive matrix (102) by the application of a programming voltage (126) across the first electrode (104) and second electrode (106) to alter the capacitance of the memcapacitor (100). A method for utilizing a memcapacitive device (100) includes applying a programming voltage (126) across a memcapacitive matrix (102) such that mobile ions (111) contained within a memcapacitive matrix (102) are redistributed and alter a capacitance of the memcapacitive device (100), then removing the programming voltage (126) and applying a reading voltage to sense the capacitance of the memcapacitive device (100).
摘要翻译：电容器装置（100）包括插入在第一电极（104）和第二电极（106）之间的第一电极（104）和第二电极（106）和存储电容矩阵（102）。移动掺杂剂（111）被包含在存储器电容矩阵（102）内，并且通过跨越第一电极（104）和第二电极（106）施加编程电压（126）而重新定位在存储电容矩阵（102）内，以改变电容器（100）的电容。一种利用存储电容器件（100）的方法包括跨越存储电容矩阵（102）施加编程电压（126），使得包含在存储电容矩阵（102）内的移动离子（111）被重新分配并改变存储器件的电容（100），然后去除所述编程电压（126）并施加读取电压以感测所述存储器件（100）的电容。

9. 发明授权

US08705265B2 Ionic devices containing a membrane between layers 有权
标题翻译：在层之间含有膜的离子装置
公开(公告)号：US08705265B2
公开(公告)日：2014-04-22
申请号：US13383614
申请日：2010-04-30
申请人： Dmitri B. Strukov , Alexandre M. Bratkovski , R. Stanley Williams , Michael R. T. Tan
发明人： Dmitri B. Strukov , Alexandre M. Bratkovski , R. Stanley Williams , Michael R. T. Tan
IPC分类号： H01L45/00 , G11C11/00
CPC分类号： G02F1/1525
摘要： A device contains a first layer, a second layer; and a membrane between the first and second layers. Mobile ions are in at least one of the first and second layers, and the membrane is permeable to the ions. Interfaces of the conductive membrane with the first layer and the second layer are such that charge of a polarity of the ions collects at the interfaces.
摘要翻译：设备包含第一层，第二层; 以及第一和第二层之间的膜。移动离子在第一和第二层中的至少一个中，并且膜对离子是可渗透的。导电膜与第一层和第二层的接触使得离子的极性的电荷在界面处收集。

10. 发明授权

US08660432B2 Image-rotation prisms and optical interconnects employing the same 有权
标题翻译：图像旋转棱镜和使用其的光学互连
公开(公告)号：US08660432B2
公开(公告)日：2014-02-25
申请号：US12922098
申请日：2008-04-02
申请人： Huei Pei Kuo , Robert G. Walmsley , Shih-Yuan Wang , Michael Renne Ty Tan , R. Stanley Williams
发明人： Huei Pei Kuo , Robert G. Walmsley , Shih-Yuan Wang , Michael Renne Ty Tan , R. Stanley Williams
IPC分类号： H04B10/00
CPC分类号： G02B5/04 , G02B27/642 , H01S5/005 , H01S5/02236 , H01S5/02292 , H01S5/183 , H01S5/50 , H04B10/803
摘要： Embodiments of the present invention relate to a family of image-rotation prisms. Each image-rotation prism has the property that as an image-rotation prism is rotated, an image passing through the image-rotation prism rotates at twice the angular rate of the image-rotation prism. Embodiments of the present invention include optical systems that can be used for board-to-board communications and employ the image-rotation prisms to compensate for arbitrary axial rotations and misalignment of optical signals and can be used to direct optical signals output from transmitters on one board to particular detectors of a detector arrangement located on an adjacent board.
摘要翻译：本发明的实施例涉及一系列图像旋转棱镜。每个图像旋转棱镜具有当图像旋转棱镜旋转时，通过图像旋转棱镜的图像以图像旋转棱镜的角速度的两倍旋转。本发明的实施例包括可用于板对板通信并使用图像旋转棱镜补偿光信号的任意轴向旋转和未对准的光学系统，并且可以用于将发射机输出的光信号引导到一个将其连接到位于相邻板上的检测器装置的特定检测器。

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