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81. 发明申请

US20090011530A1 NITRIDE-COMPOSITE SEMICONDUCTOR LASER ELEMENT, ITS MANUFACTURING METHOD, AND SEMICONDUCTOR OPTICAL DEVICE 有权
标题翻译：氮化物复合半导体激光元件及其制造方法和半导体光学器件
公开(公告)号：US20090011530A1
公开(公告)日：2009-01-08
申请号：US12211577
申请日：2008-09-16
申请人： Shigetoshi ITO , Takayuki Yuasa , Yoshihiro Ueta , Mototaka Taneya , Zenpei Tani , Kensaku Motoki
发明人： Shigetoshi ITO , Takayuki Yuasa , Yoshihiro Ueta , Mototaka Taneya , Zenpei Tani , Kensaku Motoki
IPC分类号： H01L33/00
CPC分类号： H01S5/2018 , H01L21/02389 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01S5/0207 , H01S5/2231 , H01S5/3013 , H01S5/3202 , H01S5/32341 , H01S2301/173
摘要： A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 μm or more.
摘要翻译：一种氮化物半导体激光器件，其具有内部晶体缺陷的减小和应力的缓解，以及包括该氮化物半导体激光器件的半导体光学装置。首先，在配置有显示高密度晶体缺陷和低位错区域的位错集中区域的交替条纹的n型GaN衬底的表面上形成抗GaN晶体生长的生长抑制膜，从而涂覆位错浓缩区域。接下来，通过GaN晶体的外延生长，用生长抑制膜涂覆的n型GaN衬底与氮化物半导体层重叠。此外，除去生长抑制膜以将激光波导区域和最接近的位错集中区域之间的横向距离调整为40μm以上。

82. 发明授权

US07176499B2 Method of manufacturing a semiconductor light emitting device, semiconductor light emitting device, method of manufacturing a semiconductor device, semiconductor device, method of manufacturing a device, and device 有权
标题翻译：半导体发光器件的制造方法，半导体发光器件，半导体器件的制造方法，半导体器件，器件的制造方法以及器件
公开(公告)号：US07176499B2
公开(公告)日：2007-02-13
申请号：US10719206
申请日：2003-11-21
申请人： Tsunenori Asatsuma , Shigetaka Tomiya , Koshi Tamamura , Tsuyoshi Tojo , Osamu Goto , Kensaku Motoki
发明人： Tsunenori Asatsuma , Shigetaka Tomiya , Koshi Tamamura , Tsuyoshi Tojo , Osamu Goto , Kensaku Motoki
IPC分类号： H01L29/22
CPC分类号： C30B25/02 , B82Y20/00 , C30B29/403 , C30B29/406 , H01L21/0254 , H01L21/0262 , H01L21/02664 , H01L33/007 , H01L33/0095 , H01L33/025 , H01L33/32 , H01S5/0207 , H01S5/0213 , H01S5/2036 , H01S5/22 , H01S5/2201 , H01S5/2231 , H01S5/32341 , H01S5/34333 , H01S5/4031 , H01S2301/173
摘要： When a semiconductor light emitting device or a semiconductor device is manufactured by growing nitride III-V compound semiconductor layers, which will form a light emitting device structure or a device structure, on a nitride III-V compound semiconductor substrate composed of a first region in form of a crystal having a first average dislocation density and a plurality of second regions having a second average dislocation density higher than the first average dislocation density and periodically aligned in the first region, device regions are defined on the nitride III-V compound semiconductor substrate such that the device regions do not substantially include second regions, emission regions or active regions of devices finally obtained do not include second regions.
摘要翻译：当半导体发光器件或半导体器件通过在由氮化物III-V化合物半导体衬底构成的氮化物III-V化合物半导体衬底上生长氮化物III-V化合物半导体层（其将形成发光器件结构或器件结构）具有第一平均位错密度的晶体的形式和具有高于第一平均位错密度的第二平均位错密度并在第一区域中周期性排列的多个第二区域，器件区域被限定在氮化物III-V化合物半导体衬底使得器件区域基本上不包括第二区域，最终获得的器件的发射区域或有源区域不包括第二区域。

83. 发明申请

US20060286695A1 METHOD FOR PRODUCING SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, METHOD FOR PRODUCING DEVICE, METHOD FOR GROWING NITRIDE TYPE III-V GROUP COMPOUND SEMICONDUCTOR LAYER, METHOD FOR GROWING SEMICONDUCTOR LAYER, AND METHOD FOR GROWING LAYER 审中-公开
公开(公告)号：US20060286695A1
公开(公告)日：2006-12-21
申请号：US11467641
申请日：2006-08-28
申请人： Katsunori Yanashima , Kensaku Motoki
发明人： Katsunori Yanashima , Kensaku Motoki
IPC分类号： H01L21/00
CPC分类号： C30B29/403 , B82Y20/00 , C30B25/02 , H01L21/02389 , H01L21/0243 , H01L21/0254 , H01L21/02658 , H01L33/007 , H01S5/0202 , H01S5/2004 , H01S5/2214 , H01S5/2231 , H01S5/3063 , H01S5/3215 , H01S5/34333 , H01S2301/173 , H01S2304/04 , H01S2304/12
摘要： A method for producing a semiconductor light emitting device is disclosed. The method comprises the step of growing a nitride type III-V group compound semiconductor layer that forms a light emitting device structure on a principal plane of a nitride type III-V group compound semiconductor substrate on which a plurality of second regions made of a crystal having a second average dislocation density are regularly arranged in a first region made of a crystal having a first average dislocation density so as to produce a semiconductor light emitting device, the second average dislocation density being greater than the first average dislocation density. The nitride type III-V group compound semiconductor layer does not directly contact the second regions on the principal plane of the nitride type III-V group compound semiconductor substrate.

84. 发明申请

US20060172513A1 METHOD FOR PRODUCING SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, METHOD FOR PRODUCING DEVICE, METHOD FOR GROWING NITRIDE TYPE III-V GROUP COMPOUND SEMICONDUCTOR LAYER, METHOD FOR GROWING SEMICONDUCTOR LAYER, AND METHOD FOR GROWING LAYER 审中-公开
标题翻译：用于制造半导体发光装置的方法，用于生产半导体器件的方法，用于制造器件的方法，用于生长氮化物III-V族化合物半导体层的方法，用于生长半导体层的方法和用于生长层的方法
公开(公告)号：US20060172513A1
公开(公告)日：2006-08-03
申请号：US11279709
申请日：2006-04-13
申请人： Katsunori Yanashima , Kensaku Motoki
发明人： Katsunori Yanashima , Kensaku Motoki
IPC分类号： H01L21/20 , H01L21/36 , H01L31/20
CPC分类号： C30B29/403 , B82Y20/00 , C30B25/02 , H01L21/02389 , H01L21/0243 , H01L21/0254 , H01L21/02658 , H01L33/007 , H01S5/0202 , H01S5/2004 , H01S5/2214 , H01S5/2231 , H01S5/3063 , H01S5/3215 , H01S5/34333 , H01S2301/173 , H01S2304/04 , H01S2304/12
摘要： A method for producing a semiconductor light emitting device is disclosed. The method comprises the step of growing a nitride type III-V group compound semiconductor layer that forms a light emitting device structure on a principal plane of a nitride type III-V group compound semiconductor substrate on which a plurality of second regions made of a crystal having a second average dislocation density are regularly arranged in a first region made of a crystal having a first average dislocation density so as to produce a semiconductor light emitting device, the second average dislocation density being greater than the first average dislocation density. The nitride type III-V group compound semiconductor layer does not directly contact the second regions on the principal plane of the nitride type III-V group compound semiconductor substrate.
摘要翻译：公开了一种制造半导体发光器件的方法。该方法包括在氮化物III-V族化合物半导体衬底的主平面上生长形成发光器件结构的氮化物III-V族化合物半导体层的步骤，其中多个第二区域由晶体具有第二平均位错密度的第二平均位错密度规则地布置在由具有第一平均位错密度的晶体制成的第一区域中以产生半导体发光器件，第二平均位错密度大于第一平均位错密度。氮化物III-V族化合物半导体层不直接接触氮化物III-V族化合物半导体衬底的主面上的第二区域。

85. 发明授权

US07012318B2 Oxygen-doped n-type gallium nitride freestanding single crystal substrate 有权
标题翻译：氧掺杂n型氮化镓独立单晶衬底
公开(公告)号：US07012318B2
公开(公告)日：2006-03-14
申请号：US10846526
申请日：2004-05-17
申请人： Kensaku Motoki , Masaki Ueno
发明人： Kensaku Motoki , Masaki Ueno
IPC分类号： H01L29/207
CPC分类号： C30B23/00 , C30B23/02 , C30B25/00 , C30B25/02 , C30B29/403 , C30B29/406 , C30B29/60 , C30B33/00 , H01L21/02389 , H01L21/02395 , H01L21/02433 , H01L21/0254 , H01L21/02576 , H01L21/02609 , H01L21/0262 , H01L29/2003 , H01L29/207
摘要： Oxygen can be doped into a gallium nitride crystal by preparing a non-C-plane gallium nitride seed crystal, supplying material gases including gallium, nitrogen and oxygen to the non-C-plane gallium nitride seed crystal, growing a non-C-plane gallium nitride crystal on the non-C-plane gallium nitride seed crystal and allowing oxygen to infiltrate via a non-C-plane surface to the growing gallium nitride crystal. Otherwise, oxygen can be doped into a gallium nitride crystal by preparing a C-plane gallium nitride seed crystal or a three-rotationally symmetric plane foreign material seed crystal, supplying material gases including gallium, nitrogen and oxygen to the C-plane gallium nitride seed crystal or the three-rotationally symmetric foreign seed crystal, growing a faceted C-plane gallium nitride crystal having facets of non-C-planes on the seed crystal, maintaining the facets on the C-plane gallium nitride crystal and allowing oxygen to infiltrate via the non-C-plane facets to the gallium nitride crystal.
摘要翻译：可以通过制备非C面氮化镓晶体，向非C面氮化镓晶种提供包括镓，氮和氧的材料气体，将氧可以掺杂到氮化镓晶体中，生长非C面在非C面氮化镓晶种上的氮化镓晶体，并且使得氧经由非C面表面渗入生长的氮化镓晶体。否则，可以通过制备C面氮化镓晶种或三旋转对称平面异物籽晶将氧气掺杂到氮化镓晶体中，将包括镓，氮和氧的材料气体供应到C面氮化镓晶种晶体或三旋转对称的外来晶种，在晶种上生长具有非C面的小面的C面氮化镓晶体，保持C面氮化镓晶体上的刻面，并允许氧渗透通过非C面面到氮化镓晶体。

86. 发明申请

US20050208687A1 Method of Manufacturing Single-Crystal GaN Substrate, and Single-Crystal GaN Substrate 审中-公开
标题翻译：制造单晶GaN衬底和单晶GaN衬底的方法
公开(公告)号：US20050208687A1
公开(公告)日：2005-09-22
申请号：US10907033
申请日：2005-03-17
申请人： Hitoshi Kasai , Kensaku Motoki
发明人： Hitoshi Kasai , Kensaku Motoki
IPC分类号： C30B29/38 , C30B25/02 , C30B25/18 , C30B29/40 , H01L21/205 , H01L33/16 , H01L33/32 , H01L21/00
CPC分类号： C30B25/02 , C30B25/183 , C30B29/406
摘要： Manufacture at lower cost of off-axis GaN single-crystal freestanding substrates having a crystal orientation that is displaced from (0001) instead of (0001) exact. With an off-axis (111) GaAs wafer as a starting substrate, GaN is vapor-deposited onto the starting substrate, which grows GaN crystal that is inclined at the same off-axis angle and in the same direction as is the starting substrate. Misoriented freestanding GaN substrates may be manufactured, utilizing a misoriented (111) GaAs baseplate as a starting substrate, by forming onto the starting substrate a mask having a plurality of apertures, depositing through the mask a GaN single-crystal layer, and then removing the starting substrate. The manufacture of GaN crystal having a misorientation of 0.1° to 25° is made possible.
摘要翻译：制造具有从（0001）而不是（0001）位移的晶体取向的离轴GaN单晶独立基板的成本更低。利用离轴（111）GaAs晶片作为起始衬底，将GaN气相沉积到起始衬底上，该衬底生长与起始衬底相同的偏轴角度和相同方向倾斜的GaN晶体。通过在起始衬底上形成具有多个孔的掩模，通过掩模将GaN单晶层沉积，然后除去该取向的GaN基板，可以利用错误取向的（111）GaAs基板作为起始衬底，起始底物。可以制造具有0.1°至25°取向错误的GaN晶体。

87. 发明申请

US20050042787A1 Nitride semiconductor device, its manufacturing method, and semiconductor optical apparatus 有权
标题翻译：氮化物半导体装置及其制造方法以及半导体光学装置
公开(公告)号：US20050042787A1
公开(公告)日：2005-02-24
申请号：US10493137
申请日：2002-10-28
申请人： Shigetoshi Ito , Takayuki Yuasa , Yoshihiro Ueta , Mototaka Taneya , Zenpei Tani , Kensaku Motoki
发明人： Shigetoshi Ito , Takayuki Yuasa , Yoshihiro Ueta , Mototaka Taneya , Zenpei Tani , Kensaku Motoki
IPC分类号： H01L21/20 , H01S5/02 , H01S5/323 , H01L21/00
CPC分类号： H01S5/2018 , H01L21/02389 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01S5/0207 , H01S5/2231 , H01S5/3013 , H01S5/3202 , H01S5/32341 , H01S2301/173
摘要： A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 μm or more.
摘要翻译：一种氮化物半导体激光器件，其具有内部晶体缺陷的减小和应力的缓解，以及包括该氮化物半导体激光器件的半导体光学装置。首先，在配置有显示高密度晶体缺陷和低位错区域的位错集中区域的交替条纹的n型GaN衬底的表面上形成抗GaN晶体生长的生长抑制膜，从而涂覆位错浓缩区域。接下来，通过GaN晶体的外延生长，用生长抑制膜涂覆的n型GaN衬底与氮化物半导体层重叠。此外，除去生长抑制膜以将激光波导区域和最接近的位错集中区域之间的横向距离调整为40μm以上。

88. 发明申请

US20050025205A1 Nitride semiconductor laser device 有权
标题翻译：氮化物半导体激光器件
公开(公告)号：US20050025205A1
公开(公告)日：2005-02-03
申请号：US10831687
申请日：2004-04-26
申请人： Tatsuya Ryowa , Masaya Ishida , Yukiko Morishita , Takeshi Kamikawa , Kensaku Motoki
发明人： Tatsuya Ryowa , Masaya Ishida , Yukiko Morishita , Takeshi Kamikawa , Kensaku Motoki
IPC分类号： H01L21/205 , H01S5/00 , H01S5/02 , H01S5/042 , H01S5/22 , H01S5/223 , H01S5/323 , H01S5/343
CPC分类号： B82Y20/00 , H01L2224/45144 , H01L2224/48463 , H01L2224/73265 , H01S5/0218 , H01S5/02276 , H01S5/0421 , H01S5/0425 , H01S5/2206 , H01S5/2231 , H01S5/34333 , H01S2301/173 , H01S2304/00 , H01S2304/12 , H01L2924/00
摘要： To prevent deterioration induced by wire bonding in a laser device incorporating a semiconductor laser element having a nitride semiconductor laid on top of a nitride semiconductor substrate, the position at which a wire (301) is bonded to an electrode (113) formed on the top surface of a semiconductor layered structure is located off the area right above a dislocation (crystal defect)-concentrated region (X) of the substrate. Concentration of dislocations in the substrate spreads to the layered structure, producing a dislocation-concentrated region in the part of the layered structure located right above the dislocation-concentrated region of the substrate. If a wire is bonded above this region, the pressure applied when the wire is bonded causes the metal of which the electrode is made to diffuse along the concentrated dislocations, lowering the quality of the layered structure and thus resulting in deterioration of the element. Bonding a wire elsewhere than above the dislocation-concentrated region (X) helps prevent such deterioration.
摘要翻译：为了防止在包含氮化物半导体衬底上的具有氮化物半导体的半导体激光元件的激光器件中导线引起的劣化，导线（301）与形成在顶部上的电极（113）接合的位置半导体层叠结构的表面位于基板的位错（晶体缺陷） - 集中区域（X）正上方的区域的外侧。底物中的位错浓度扩散到层状结构，在位于基底的位错集中区域正上方的层状结构部分中产生位错集中区域。如果在该区域上接合线，则在导线接合时施加的压力使得电极的金属沿着浓集的位错扩散，降低了层状结构的质量，从而导致元件的劣化。将电线连接到位于位错集中区域（X）以上的电线有助于防止这种变质。

89. 发明授权

US08502238B2 Nitride-composite semiconductor laser element, its manufacturing method, and semiconductor optical device 有权
公开(公告)号：US08502238B2
公开(公告)日：2013-08-06
申请号：US13688021
申请日：2012-11-28
申请人： Shigetoshi Ito , Takayuki Yuasa , Yoshihiro Ueta , Mototaka Taneya , Zenpei Tani , Kensaku Motoki
发明人： Shigetoshi Ito , Takayuki Yuasa , Yoshihiro Ueta , Mototaka Taneya , Zenpei Tani , Kensaku Motoki
IPC分类号： H01L33/00
CPC分类号： H01S5/2018 , H01L21/02389 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01S5/0207 , H01S5/2231 , H01S5/3013 , H01S5/3202 , H01S5/32341 , H01S2301/173
摘要： A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 μm or more.

90. 发明申请

US20110315998A1 EPITAXIAL WAFER, METHOD FOR MANUFACTURING GALLIUM NITRIDE SEMICONDUCTOR DEVICE, GALLIUM NITRIDE SEMICONDUCTOR DEVICE AND GALLIUM OXIDE WAFER 失效
标题翻译：外延膜，制造氮化镓半导体器件的方法，氮化镓半导体器件和氧化铝膜
公开(公告)号：US20110315998A1
公开(公告)日：2011-12-29
申请号：US13148543
申请日：2010-02-04
申请人： Shin Hashimoto , Katsushi Akita , Shinsuke Fujiwara , Hideaki Nakahata , Kensaku Motoki
发明人： Shin Hashimoto , Katsushi Akita , Shinsuke Fujiwara , Hideaki Nakahata , Kensaku Motoki
IPC分类号： H01L29/20 , C01G15/00 , H01L21/20
CPC分类号： H01L21/0242 , C30B25/18 , C30B29/16 , C30B29/403 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L29/045 , H01L29/2003 , H01L29/66462 , H01L29/7787 , H01L33/007 , H01L33/16
摘要： A gallium nitride based semiconductor device is provided which includes a gallium nitride based semiconductor film with a flat c-plane surface provided on a gallium oxide wafer. A light emitting diode LED includes a gallium oxide support base 32 having a primary surface 32a of monoclinic gallium oxide, and a laminate structure 33 of Group III nitride. A semiconductor mesa of the laminate structure 33 includes a low-temperature GaN buffer layer 35, an n-type GaN layer 37, an active layer 39 of a quantum well structure, and a p-type gallium nitride based semiconductor layer 37. The p-type gallium nitride based semiconductor layer 37 includes, for example, a p-type AlGaN electron block layer and a p-type GaN contact layer. The primary surface 32a of the gallium oxide support base 32 is inclined at an angle of not less than 2 degrees and not more than 4 degrees relative to a (100) plane of monoclinic gallium oxide. Owing to this inclination, the gallium nitride based semiconductor epitaxially grown on the primary surface 32a of the gallium oxide support base has a flat surface.
摘要翻译：提供了一种氮化镓基半导体器件，其包括在氧化镓晶片上设置有平坦c面的氮化镓基半导体膜。发光二极管LED包括具有单斜氧化镓的主表面32a的氧化镓载体基底32和III族氮化物的叠层结构33。层压结构33的半导体台面包括低温GaN缓冲层35，n型GaN层37，量子阱结构的有源层39和p型氮化镓基半导体层37. p 型氮化镓系半导体层37例如包括p型AlGaN电子阻挡层和p型GaN接触层。氧化镓载体基体32的主表面32a相对于单斜晶系氧化镓的（100）面倾斜2度以上4度以下。由于该倾斜，在氧化镓载体基体的主表面32a上外延生长的氮化镓基半导体具有平坦的表面。

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