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1. 发明授权

US07781244B2 Method of manufacturing nitride-composite semiconductor laser element, with disclocation control 有权
标题翻译：具有位移控制的氮化物复合半导体激光元件的制造方法
公开(公告)号：US07781244B2
公开(公告)日：2010-08-24
申请号：US12211577
申请日：2008-09-16
申请人： Shigetoshi Ito , Takayuki Yuasa , Yoshihiro Ueta , Mototaka Taneya , Zenpei Tani , Kensaku Motoki
发明人： Shigetoshi Ito , Takayuki Yuasa , Yoshihiro Ueta , Mototaka Taneya , Zenpei Tani , Kensaku Motoki
IPC分类号： H01L21/00
CPC分类号： H01S5/2018 , H01L21/02389 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01S5/0207 , H01S5/2231 , H01S5/3013 , H01S5/3202 , H01S5/32341 , H01S2301/173
摘要： A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 μm or more.
摘要翻译：一种氮化物半导体激光器件，其具有内部晶体缺陷的减小和应力的缓解，以及包括该氮化物半导体激光器件的半导体光学装置。首先，在配置有显示高密度晶体缺陷和低位错区域的位错集中区域的交替条纹的n型GaN衬底的表面上形成抗GaN晶体生长的生长抑制膜，从而涂覆位错浓缩区域。接下来，通过GaN晶体的外延生长，用生长抑制膜涂覆的n型GaN衬底与氮化物半导体层重叠。此外，除去生长抑制膜以将激光波导区域和最接近的位错集中区域之间的横向距离调节至40μm以上。

2. 发明申请

US20090011530A1 NITRIDE-COMPOSITE SEMICONDUCTOR LASER ELEMENT, ITS MANUFACTURING METHOD, AND SEMICONDUCTOR OPTICAL DEVICE 有权
标题翻译：氮化物复合半导体激光元件及其制造方法和半导体光学器件
公开(公告)号：US20090011530A1
公开(公告)日：2009-01-08
申请号：US12211577
申请日：2008-09-16
申请人： Shigetoshi ITO , Takayuki Yuasa , Yoshihiro Ueta , Mototaka Taneya , Zenpei Tani , Kensaku Motoki
发明人： Shigetoshi ITO , Takayuki Yuasa , Yoshihiro Ueta , Mototaka Taneya , Zenpei Tani , Kensaku Motoki
IPC分类号： H01L33/00
CPC分类号： H01S5/2018 , H01L21/02389 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01S5/0207 , H01S5/2231 , H01S5/3013 , H01S5/3202 , H01S5/32341 , H01S2301/173
摘要： A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 μm or more.
摘要翻译：一种氮化物半导体激光器件，其具有内部晶体缺陷的减小和应力的缓解，以及包括该氮化物半导体激光器件的半导体光学装置。首先，在配置有显示高密度晶体缺陷和低位错区域的位错集中区域的交替条纹的n型GaN衬底的表面上形成抗GaN晶体生长的生长抑制膜，从而涂覆位错浓缩区域。接下来，通过GaN晶体的外延生长，用生长抑制膜涂覆的n型GaN衬底与氮化物半导体层重叠。此外，除去生长抑制膜以将激光波导区域和最接近的位错集中区域之间的横向距离调整为40μm以上。

3. 发明申请

US20050042787A1 Nitride semiconductor device, its manufacturing method, and semiconductor optical apparatus 有权
标题翻译：氮化物半导体装置及其制造方法以及半导体光学装置
公开(公告)号：US20050042787A1
公开(公告)日：2005-02-24
申请号：US10493137
申请日：2002-10-28
申请人： Shigetoshi Ito , Takayuki Yuasa , Yoshihiro Ueta , Mototaka Taneya , Zenpei Tani , Kensaku Motoki
发明人： Shigetoshi Ito , Takayuki Yuasa , Yoshihiro Ueta , Mototaka Taneya , Zenpei Tani , Kensaku Motoki
IPC分类号： H01L21/20 , H01S5/02 , H01S5/323 , H01L21/00
CPC分类号： H01S5/2018 , H01L21/02389 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01S5/0207 , H01S5/2231 , H01S5/3013 , H01S5/3202 , H01S5/32341 , H01S2301/173
摘要： A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 μm or more.
摘要翻译：一种氮化物半导体激光器件，其具有内部晶体缺陷的减小和应力的缓解，以及包括该氮化物半导体激光器件的半导体光学装置。首先，在配置有显示高密度晶体缺陷和低位错区域的位错集中区域的交替条纹的n型GaN衬底的表面上形成抗GaN晶体生长的生长抑制膜，从而涂覆位错浓缩区域。接下来，通过GaN晶体的外延生长，用生长抑制膜涂覆的n型GaN衬底与氮化物半导体层重叠。此外，除去生长抑制膜以将激光波导区域和最接近的位错集中区域之间的横向距离调整为40μm以上。

4. 发明授权

US08502238B2 Nitride-composite semiconductor laser element, its manufacturing method, and semiconductor optical device 有权
公开(公告)号：US08502238B2
公开(公告)日：2013-08-06
申请号：US13688021
申请日：2012-11-28
申请人： Shigetoshi Ito , Takayuki Yuasa , Yoshihiro Ueta , Mototaka Taneya , Zenpei Tani , Kensaku Motoki
发明人： Shigetoshi Ito , Takayuki Yuasa , Yoshihiro Ueta , Mototaka Taneya , Zenpei Tani , Kensaku Motoki
IPC分类号： H01L33/00
CPC分类号： H01S5/2018 , H01L21/02389 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01S5/0207 , H01S5/2231 , H01S5/3013 , H01S5/3202 , H01S5/32341 , H01S2301/173
摘要： A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 μm or more.

5. 发明授权

US07498608B2 Nitride-composite semiconductor laser element, its manufacturing method, and semiconductor optical device 有权
标题翻译：氮化物复合半导体激光元件，其制造方法和半导体光学器件
公开(公告)号：US07498608B2
公开(公告)日：2009-03-03
申请号：US10493137
申请日：2002-10-28
申请人： Shigetoshi Ito , Takayuki Yuasa , Yoshihiro Ueta , Mototaka Taneya , Zenpei Tani , Kensaku Motoki
发明人： Shigetoshi Ito , Takayuki Yuasa , Yoshihiro Ueta , Mototaka Taneya , Zenpei Tani , Kensaku Motoki
IPC分类号： H01L33/00
CPC分类号： H01S5/2018 , H01L21/02389 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01S5/0207 , H01S5/2231 , H01S5/3013 , H01S5/3202 , H01S5/32341 , H01S2301/173
摘要： A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 μm or more.
摘要翻译：一种氮化物半导体激光器件，其具有内部晶体缺陷的减小和应力的缓解，以及包括该氮化物半导体激光器件的半导体光学装置。首先，在配置有显示高密度晶体缺陷和低位错区域的位错集中区域的交替条纹的n型GaN衬底的表面上形成抗GaN晶体生长的生长抑制膜，从而涂覆位错浓缩区域。接下来，通过GaN晶体的外延生长，用生长抑制膜涂覆的n型GaN衬底与氮化物半导体层重叠。此外，除去生长抑制膜以将激光波导区域和最接近的位错集中区域之间的横向距离调整为40μm以上。

6. 发明授权

US08334544B2 Nitride semiconductor laser device including growth-inhibiting film at dislocation concentrated region 有权
标题翻译：氮化物半导体激光器件包括位错集中区域的生长抑制膜
公开(公告)号：US08334544B2
公开(公告)日：2012-12-18
申请号：US12836211
申请日：2010-07-14
申请人： Shigetoshi Ito , Takayuki Yuasa , Yoshihiro Ueta , Mototaka Taneya , Zenpei Tani , Kensaku Motoki
发明人： Shigetoshi Ito , Takayuki Yuasa , Yoshihiro Ueta , Mototaka Taneya , Zenpei Tani , Kensaku Motoki
IPC分类号： H01L33/00
CPC分类号： H01S5/2018 , H01L21/02389 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01S5/0207 , H01S5/2231 , H01S5/3013 , H01S5/3202 , H01S5/32341 , H01S2301/173
摘要： A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 μm or more.
摘要翻译：一种氮化物半导体激光器件，其具有内部晶体缺陷的减小和应力的缓解，以及包括该氮化物半导体激光器件的半导体光学装置。首先，在配置有显示高密度晶体缺陷和低位错区域的位错集中区域的交替条纹的n型GaN衬底的表面上形成抗GaN晶体生长的生长抑制膜，从而涂覆位错浓缩区域。接下来，通过GaN晶体的外延生长，用生长抑制膜涂覆的n型GaN衬底与氮化物半导体层重叠。此外，除去生长抑制膜以将激光波导区域和最接近的位错集中区域之间的横向距离调节至40μm以上。

7. 发明授权

US4988895A Comparator circuit 失效
标题翻译：比较器电路
公开(公告)号：US4988895A
公开(公告)日：1991-01-29
申请号：US541211
申请日：1990-06-22
申请人： Seiichiro Kihara , Zenpei Tani , Hisao Nagao
发明人： Seiichiro Kihara , Zenpei Tani , Hisao Nagao
IPC分类号： H03K5/08 , H03K3/0233 , H03K17/30 , H03K5/153 , H03K5/24
CPC分类号： H03K17/30 , H03K3/02337
摘要： A novel comparator circuit is disclosed, in which a pulse output is obtained from the output terminal of a differential amplifier through a transistor by applying a threshold voltage to either input terminal of a differential amplifier composed of a pair of transistors and then comparing an input voltage applied to the other input terminal therewith, wherein the aforementioned pair of transistors of the differential amplifier are each composed of two transistors connected in a complex manner, the input voltage is directly inputted, without the use of a buffer or the like, by raising the input impedance of the comparator circuit to thereby simplify the circuit as a whole and to widen its scope of application. Further, the output terminal of the differential amplifier connected to a transistor in an output circuit of the comparator circuit and a power source are connected through a resistor so as to ensure against occurrence of impulses in the output pulses through prevention of operation of the output circuit alone before changing of the threshold voltage for causing a hysteresis property to be imparted to the comparator circuit.
摘要翻译：公开了一种新颖的比较器电路，其中通过对由晶体管组成的差分放大器的输入端施加阈值电压，然后将输入电压进行比较，通过晶体管从差分放大器的输出端获得脉冲输出应用于其他输入端子，其中差分放大器的上述一对晶体管各自由以复合方式连接的两个晶体管组成，直接输入输入电压，而不需要使用缓冲器等，通过提高比较器电路的输入阻抗，从而简化整个电路并扩大其应用范围。此外，连接到比较器电路的输出电路中的晶体管和电源的差分放大器的输出端子通过电阻器连接，以便通过防止输出电路的操作来确保不会在输出脉冲中产生脉冲在改变阈值电压之前单独地将滞后特性赋予比较器电路。

8. 发明授权

US4115832A Igniter utilizing a negative resistance light emitting diode 失效
标题翻译：点火器利用负电阻发光二极管
公开(公告)号：US4115832A
公开(公告)日：1978-09-19
申请号：US750627
申请日：1976-12-15
申请人： Tutomu Nakamura , Junichiro Shigemasa , Zenpei Tani
发明人： Tutomu Nakamura , Junichiro Shigemasa , Zenpei Tani
IPC分类号： F23Q3/00 , H03K3/57 , F23Q3/01
CPC分类号： H03K3/57 , F23Q3/004
摘要： An oscillator utilizing a negative resistance light emitting semiconductor diode is connected in series with voltage booster means which in turn provides a high voltage to electrodes of a gas igniter. Discharge of the gas between the electrodes occurs with the aid of the high voltage derived from the voltage booster means to thereby effect an ignition of the gas. Light emission from the diode in the absence of gas ignition is indicative of a deficiency in the supply of gas, while the absence of light emission in the absence of gas ignition is indicative of a deficiency in the operation of the oscillator circuit.
摘要翻译：利用负电阻发光半导体二极管的振荡器与升压装置串联连接，升压装置又向气体点火器的电极提供高电压。电极之间的气体放电借助于从升压装置产生的高电压而发生，从而实现气体的点燃。在没有气体点火的情况下来自二极管的发光表示气体供应不足，而在没有气体点火的情况下没有发光表明振荡器电路的操作不足。

9. 发明授权

US06448614B2 Circuit-incorporating photosensitive device 失效
标题翻译：电路结合光敏元件
公开(公告)号：US06448614B2
公开(公告)日：2002-09-10
申请号：US09864861
申请日：2001-05-25
申请人： Masaru Kubo , Toshihiko Fukushima , Zenpei Tani
发明人： Masaru Kubo , Toshihiko Fukushima , Zenpei Tani
IPC分类号： H01L2972
CPC分类号： H01L27/1443
摘要： A circuit-incorporating photosensitive device comprising: an SOI wafer including a first silicon substrate, a second silicon substrate, and an oxide film; a photodiode formed in a first region of the SOI wafer; and a signal processing circuit formed in a second region of the SOI wafer, wherein the photodiode includes a photosensitive layer formed of an SiGe layer.
摘要翻译：一种电路结合光敏器件，包括：SOI晶片，包括第一硅衬底，第二硅衬底和氧化物膜; 形成在SOI晶片的第一区域中的光电二极管; 以及形成在SOI晶片的第二区域中的信号处理电路，其中所述光电二极管包括由SiGe层形成的感光层。

10. 发明授权

US06707081B2 Photodetector with built-in circuit 失效
标题翻译：光电探测器内置电路
公开(公告)号：US06707081B2
公开(公告)日：2004-03-16
申请号：US09921777
申请日：2001-08-06
申请人： Takahiro Takimoto , Isamu Okubo , Toshimitsu Kasamatsu , Masaru Kubo , Zenpei Tani
发明人： Takahiro Takimoto , Isamu Okubo , Toshimitsu Kasamatsu , Masaru Kubo , Zenpei Tani
IPC分类号： H01L31062
CPC分类号： H01L27/1443
摘要： A photodetector with a built-in circuit includes a semiconductor substrate, an integrated circuit provided on the semiconductor substrate, and a photodiode provided on the semiconductor substrate. The integrated circuit includes a SiGe layer provided on at least a portion of the integrated circuit.
摘要翻译：具有内置电路的光检测器包括半导体衬底，设置在半导体衬底上的集成电路和设置在半导体衬底上的光电二极管。集成电路包括设置在集成电路的至少一部分上的SiGe层。

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