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1. 发明授权

US08334544B2 Nitride semiconductor laser device including growth-inhibiting film at dislocation concentrated region 有权
标题翻译：氮化物半导体激光器件包括位错集中区域的生长抑制膜
公开(公告)号：US08334544B2
公开(公告)日：2012-12-18
申请号：US12836211
申请日：2010-07-14
申请人： Shigetoshi Ito , Takayuki Yuasa , Yoshihiro Ueta , Mototaka Taneya , Zenpei Tani , Kensaku Motoki
发明人： Shigetoshi Ito , Takayuki Yuasa , Yoshihiro Ueta , Mototaka Taneya , Zenpei Tani , Kensaku Motoki
IPC分类号： H01L33/00
CPC分类号： H01S5/2018 , H01L21/02389 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01S5/0207 , H01S5/2231 , H01S5/3013 , H01S5/3202 , H01S5/32341 , H01S2301/173
摘要： A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 μm or more.
摘要翻译：一种氮化物半导体激光器件，其具有内部晶体缺陷的减小和应力的缓解，以及包括该氮化物半导体激光器件的半导体光学装置。首先，在配置有显示高密度晶体缺陷和低位错区域的位错集中区域的交替条纹的n型GaN衬底的表面上形成抗GaN晶体生长的生长抑制膜，从而涂覆位错浓缩区域。接下来，通过GaN晶体的外延生长，用生长抑制膜涂覆的n型GaN衬底与氮化物半导体层重叠。此外，除去生长抑制膜以将激光波导区域和最接近的位错集中区域之间的横向距离调节至40μm以上。

2. 发明授权

US08029044B2 Cab structure of construction equipment 有权
标题翻译：驾驶室结构的施工设备
公开(公告)号：US08029044B2
公开(公告)日：2011-10-04
申请号：US12449623
申请日：2008-01-31
申请人： Eiji Akahane , Takayuki Yuasa , Kazushige Tasaki , Masayoshi Nakajima , Robert D. Clausen , Teruyuki Yamada , Hideo Kosaka , Yusuke Harayama
发明人： Eiji Akahane , Takayuki Yuasa , Kazushige Tasaki , Masayoshi Nakajima , Robert D. Clausen , Teruyuki Yamada , Hideo Kosaka , Yusuke Harayama
IPC分类号： B60N99/00
CPC分类号： B62D33/0617 , E02F9/163
摘要： To facilitate the production of a cab in the form of a box by joining side, rear and roof panels to pillars, and to improve the productivity. Pillars forming the cab (2) include composite pillars (16, 18) obtained by juxtaposing and joining together the pairs of pillar members (20, 22), and panel assemblies (4, 6, 8) adjacent to the pillar members (20, 22) are joined to the pillar members (20, 22) of the composite pillars (16, 18).
摘要翻译：通过将侧面，后部和屋顶面板连接到支柱上，便于通过将箱子形式的驾驶室生产，并提高生产率。形成驾驶室（2）的支柱包括通过将一对柱构件（20,22）和邻近柱构件（20,22）的面板组件（4,6,8）并置并连接在一起而获得的复合柱（16,18） 22）连接到复合柱（16,18）的柱构件（20,22）。

3. 发明授权

US07858992B2 Nitride semiconductor light-emitting device, method of fabricating it, and semiconductor optical apparatus 有权
标题翻译：氮化物半导体发光元件及其制造方法以及半导体光学装置
公开(公告)号：US07858992B2
公开(公告)日：2010-12-28
申请号：US12366480
申请日：2009-02-05
申请人： Yoshihiro Ueta , Teruyoshi Takakura , Takeshi Kamikawa , Yuhzoh Tsuda , Shigetoshi Ito , Takayuki Yuasa , Mototaka Taneya , Kensaku Motoki
发明人： Yoshihiro Ueta , Teruyoshi Takakura , Takeshi Kamikawa , Yuhzoh Tsuda , Shigetoshi Ito , Takayuki Yuasa , Mototaka Taneya , Kensaku Motoki
IPC分类号： H01L29/04 , H01L29/06
CPC分类号： B82Y20/00 , H01S5/0207 , H01S5/2201 , H01S5/3202 , H01S5/34333 , H01S2304/12
摘要： A nitride semiconductor laser device has a nitride semiconductor substrate that includes a dislocation-concentrated region 102 and a wide low-dislocation region and that has the top surface thereof slanted at an angle in the range of 0.3° to 0.7° relative to the C plane and a nitride semiconductor layer laid on top thereof. The nitride semiconductor layer has a depression immediately above the dislocation-concentrated region, and has, in a region thereof other than the depression, a high-quality quantum well active layer with good flatness and without cracks, a layer that, as is grown, readily exhibits p-type conductivity, and a stripe-shaped laser light waveguide region. The laser light waveguide region is formed above the low-dislocation region. This helps realize a nitride semiconductor laser device that offers a longer life.
摘要翻译：氮化物半导体激光器件具有氮化物半导体衬底，其包括位错集中区域102和宽低位错区域，并且其顶表面相对于C平面以0.3°至0.7°的范围内的角度倾斜和位于其顶部的氮化物半导体层。氮化物半导体层在位错集中区域正上方具有凹陷，并且在除了凹陷以外的区域中具有良好的平坦度且没有裂纹的高质量的量子阱活性层，易于显示p型导电性，以及条状激光波导区域。激光波导区域形成在低位错区域的上方。这有助于实现提供更长寿命的氮化物半导体激光器件。

4. 发明申请

US20100278205A1 NITRIDE-COMPOSITE SEMICONDUCTOR LASER ELEMENT, ITS MANUFACTURING METHOD, AND SEMICONDUCTOR OPTICAL DEVICE 有权
标题翻译：氮化物复合半导体激光元件及其制造方法和半导体光学器件
公开(公告)号：US20100278205A1
公开(公告)日：2010-11-04
申请号：US12836211
申请日：2010-07-14
申请人： Shigetoshi ITO , Takayuki YUASA , Yoshihiro UETA , Mototaka TANEYA , Zenpei TANI , Kensaku MOTOKI
发明人： Shigetoshi ITO , Takayuki YUASA , Yoshihiro UETA , Mototaka TANEYA , Zenpei TANI , Kensaku MOTOKI
IPC分类号： H01S5/343 , H01S5/22
CPC分类号： H01S5/2018 , H01L21/02389 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01S5/0207 , H01S5/2231 , H01S5/3013 , H01S5/3202 , H01S5/32341 , H01S2301/173
摘要： A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 μm or more.
摘要翻译：一种氮化物半导体激光器件，其具有内部晶体缺陷的减小和应力的缓解，以及包括该氮化物半导体激光器件的半导体光学装置。首先，在配置有显示高密度晶体缺陷和低位错区域的位错集中区域的交替条纹的n型GaN衬底的表面上形成抗GaN晶体生长的生长抑制膜，从而涂覆位错浓缩区域。接下来，通过GaN晶体的外延生长，用生长抑制膜涂覆的n型GaN衬底与氮化物半导体层重叠。此外，除去生长抑制膜以将激光波导区域和最接近的位错集中区域之间的横向距离调节至40μm以上。

5. 发明申请

US20060065197A1 Vapor deposition apparatus 审中-公开
标题翻译：蒸镀装置
公开(公告)号：US20060065197A1
公开(公告)日：2006-03-30
申请号：US11235188
申请日：2005-09-27
申请人： Eiji Yamada , Takayuki Yuasa , Masahiro Araki , Nakao Akutsu
发明人： Eiji Yamada , Takayuki Yuasa , Masahiro Araki , Nakao Akutsu
IPC分类号： C23C16/00
CPC分类号： C23C16/455 , C23C16/54
摘要： A vapor deposition apparatus of the present invention has a substrate holder having a substrate holding surface for holding a substrate thereon, and a flow channel for supplying a source gas onto the substrate. The flow channel has an upper wall and a lower wall. An aperture portion is provided in the lower wall of the flow channel. The substrate holding surface of the substrate holder fits in the aperture portion while forming a space between the substrate holding surface and the aperture portion. A means for reducing leakage of gas through the space between the aperture portion and the substrate holder is provided. With this structure, since a means for reducing leakage of gas through the space between the aperture portion and the substrate holder is provided, the conductance with respect to outflow of gas increases, which in turn reduces variations in the amount of outflow gas. This results in high yield production of nitride semiconductor devices with a long life and high light-emission efficiency.
摘要翻译：本发明的蒸镀装置具有：基板保持具，具有用于保持基板的基板保持面，以及用于将源气体供给到基板上的流路。流动通道具有上壁和下壁。开口部设置在流路的下壁。在衬底保持表面和孔部之间形成空间的同时，衬底保持器的衬底保持表面装配在孔部分中。提供了一种用于减少气体通过开口部分和衬底保持器之间的空间的泄漏的装置。利用这种结构，由于提供了用于减少气体通过开口部和基板保持架之间的空气的泄漏的装置，所以相对于气体流出的电导性增加，从而减小流出气体量的变化。这导致具有长寿命和高发光效率的氮化物半导体器件的高产量生产。

6. 发明授权

US07015058B2 Method for fabricating a group III nitride semiconductor laser device 有权
标题翻译：制造III族氮化物半导体激光器件的方法
公开(公告)号：US07015058B2
公开(公告)日：2006-03-21
申请号：US10917514
申请日：2004-08-13
申请人： Kunihiro Takatani , Shigetoshi Ito , Takayuki Yuasa , Mototaka Taneya , Kensaku Motoki
发明人： Kunihiro Takatani , Shigetoshi Ito , Takayuki Yuasa , Mototaka Taneya , Kensaku Motoki
IPC分类号： H01L21/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0207 , H01S5/2201 , H01S5/2231 , H01S5/3202 , H01S2301/173
摘要： A nitride semiconductor laser device using a group III nitride semiconductor also as a substrate offers excellent operation characteristics and a long laser oscillation life. In a layered structure of a group III nitride semiconductor formed on a GaN substrate, a laser optical waveguide region is formed elsewhere than right above a dislocation-concentrated region extending so as to vertically penetrate the substrate, and electrodes are formed on the top surface of the layered structure and on the bottom surface of the substrate elsewhere than right above or below the dislocation-concentrated region. In a portion of the top surface of the layered structure and in a portion of the bottom surface of the substrate right above and below the dislocation-concentrated region, dielectric layers may be formed to prevent the electrodes from making contact with those regions.
摘要翻译：也可以使用III族氮化物半导体作为基板的氮化物半导体激光器件具有优异的操作特性和较长的激光振荡寿命。在形成在GaN衬底上的III族氮化物半导体的分层结构中，激光光波导区域形成在垂直贯穿衬底的位错集中区域的正上方的别处，并且电极形成在层叠结构，并且位于基底的底表面上，位于位错集中区域正上方或下方。在层状结构的顶表面的一部分中，并且在位错集中区域的正上方和下方的衬底的底表面的一部分中，可以形成电介质层以防止电极与那些区域接触。

7. 发明授权

US06891201B2 Nitride semiconductor laser element and optical device containing it 有权
标题翻译：氮化物半导体激光元件和含有它的光学器件
公开(公告)号：US06891201B2
公开(公告)日：2005-05-10
申请号：US10466339
申请日：2002-01-09
申请人： Yuhzoh Tsuda , Takayuki Yuasa , Shigetoshi Ito , Mototaka Taneya , Yukio Yamasaki
发明人： Yuhzoh Tsuda , Takayuki Yuasa , Shigetoshi Ito , Mototaka Taneya , Yukio Yamasaki
IPC分类号： H01L33/00 , H01S5/02 , H01S5/223 , H01S5/323 , H01S5/343
CPC分类号： B82Y20/00 , H01L33/0075 , H01S5/0207 , H01S5/2231 , H01S5/32341 , H01S5/34333 , H01S2304/12
摘要： A nitride semiconductor light emitting device includes a processed substrate (101a) including a groove and a hill formed on a main surface of a nitride semiconductor substrate, a nitride semiconductor underlayer (102) covering the groove and the hill of the processed substrate, and a light emitting device structure having a light emitting layer (106) including a quantum well layer or a quantum well layer and a barrier layer in contact with the quantum well layer between an n type layer (103-105) and a p type layer (107-110) over the nitride semiconductor underlayer. A current-constricting portion of the light emitting device structure is formed above a region more than 1 μm away from the center of the groove in the width direction and more than 1 μm away from the center of the hill in the width direction.
摘要翻译：氮化物半导体发光器件包括：处理衬底（101a），其包括形成在氮化物半导体衬底的主表面上的沟槽和丘丘;覆盖所述沟槽和所述被处理衬底的所述山丘的氮化物半导体衬底（102），以及具有包括量子阱层或量子阱层的发光层（106）和与n型层（103-105）和ap型层（107）之间的量子阱层接触的阻挡层的发光器件结构 -110）在氮化物半导体衬底上。发光器件结构的电流限制部分形成在距宽度方向上的槽的中心超过1um的区域上方，并且在宽度方向上距离山的中心大于1mum。

8. 发明授权

US06452216B1 Nitride semiconductor light emitting device and apparatus including the same 有权
标题翻译：氮化物半导体发光器件及其装置
公开(公告)号：US06452216B1
公开(公告)日：2002-09-17
申请号：US09952845
申请日：2001-09-11
申请人： Yuhzoh Tsuda , Takayuki Yuasa , Shigetoshi Ito , Mototaka Taneya
发明人： Yuhzoh Tsuda , Takayuki Yuasa , Shigetoshi Ito , Mototaka Taneya
IPC分类号： H01L3300
CPC分类号： H01L33/20 , H01L21/02389 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L21/02647 , H01L33/32 , H01S5/0021 , H01S5/0207 , H01S5/3203 , H01S5/32341
摘要： A nitride semiconductor light emitting device includes a worked substrate including grooves and lands formed on a main surface of a nitride semiconductor substrate, a nitride semiconductor underlayer covering the grooves and the lands of the worked substrate and a nitride semiconductor multilayer emission structure including an emission layer including a quantum well layer or both a quantum well layer and a barrier layer in contact with the quantum well layer between an n-type layer and a p-type layer over the nitride semiconductor underlayer, while the width of the grooves is within the range of 11 to 30 &mgr;m and the width of the lands is within the range of 1 to 20 &mgr;m.
摘要翻译：氮化物半导体发光器件包括：加工衬底，其包括形成在氮化物半导体衬底的主表面上的沟槽和焊盘;覆盖所述沟槽和所述加工衬底的焊盘的氮化物半导体衬底;以及氮化物半导体多层发射结构，包括与氮化物半导体下层上的n型层和p型层之间的量子阱层接触的量子阱层或势垒层，而沟槽的宽度在该范围内为11〜30μm，平台的宽度为1〜20μm的范围。

9. 发明授权

US08361939B2 Multilayered sintered sliding member 有权
标题翻译：多层烧结滑动构件
公开(公告)号：US08361939B2
公开(公告)日：2013-01-29
申请号：US12671275
申请日：2008-07-30
申请人： Takayuki Yuasa , Masaya Yorifuji , Tomoyuki Yamane , Shinya Nishimura
发明人： Takayuki Yuasa , Masaya Yorifuji , Tomoyuki Yamane , Shinya Nishimura
IPC分类号： F16C33/06
CPC分类号： B22F7/004 , B22F2003/247 , B22F2998/10 , B22F2999/00 , C22C1/0425 , F16C33/104 , F16C33/121 , Y10T428/12042 , B22F1/0003 , B22F3/18 , B22F3/1007 , B22F3/24 , B22F3/26 , B22F2201/016
摘要： In a multilayered sintered sliding member, a porous sintered alloy layer comprising 3 to 10 wt. % of an Sn component, 10 to 30 wt. % of an Ni component, 0.5 to 4 wt. % of a P component, 30 to 50 wt. % of an Fe component, 1 to 10 wt. % of a high-speed tool steel component, 1 to 5 wt. % of a graphite component, and 20 to 55 wt. % of a copper component is integrally diffusion-bonded to a backing plate.
摘要翻译：在多层烧结滑动构件中，含有3〜10重量％ Sn组分的％，10〜30重量％ Ni成分的％，0.5〜4重量％％的P成分，30〜50wt。％的Fe成分，1〜10wt。％的高速工具钢部件，1〜5重量％％的石墨成分，20〜55wt。铜组分的％被一体地扩散粘结到背板上。

10. 发明申请

US20120234371A1 INCIDENT ANGLE DEPENDENT SMART SOLAR CONCENTRATOR 审中-公开
标题翻译：偶发角度智能太阳能集中器
公开(公告)号：US20120234371A1
公开(公告)日：2012-09-20
申请号：US13051656
申请日：2011-03-18
申请人： Tong Zhang , Martin David Tillin , Takayuki Yuasa
发明人： Tong Zhang , Martin David Tillin , Takayuki Yuasa
IPC分类号： H01L31/052 , E06B7/00 , H01L31/0232
CPC分类号： G02B17/006 , H01L31/0547 , Y02E10/52
摘要： A transparent solar concentrator is provided for converting solar energy into electrical energy. The solar concentrator includes a first light transmissive substrate, a plurality of solar cells for receiving solar energy and converting the solar energy into electrical energy, the plurality of solar cells positioned relative to the first substrate, and a plurality of light redirecting elements arranged in the first light transmissive substrate. Each of the plurality of light redirecting elements is configured to direct light incident on a first side of the first light transmissive substrate to a respective one of the plurality of solar cells on an opposite side of the first light transmissive substrate.
摘要翻译：提供了一种透明的太阳能集中器，用于将太阳能转换为电能。太阳能集中器包括第一透光基板，用于接收太阳能并将太阳能转换成电能的多个太阳能电池，多个太阳能电池相对于第一基板定位，并且多个光重定向元件布置在第一透光基板。多个光重定向元件中的每一个被配置为将入射在第一透光基板的第一侧上的光引导到第一透光基板的相对侧上的多个太阳能电池中的相应一个。

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