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81. 发明授权

US06306773B1 Method of producing a semiconductor device of SiC 有权
标题翻译：制造SiC半导体器件的方法
公开(公告)号：US06306773B1
公开(公告)日：2001-10-23
申请号：US09496085
申请日：2000-02-01
申请人： Christian Adås , Stefan Karlsson , Andrei Konstantinov , Christopher Harris , Thomas Hörman
发明人： Christian Adås , Stefan Karlsson , Andrei Konstantinov , Christopher Harris , Thomas Hörman
IPC分类号： H01L21302
CPC分类号： B81C1/00595 , B81C2201/0114 , B81C2201/0133 , H01L21/0475
摘要： The invention relates to a method for selective etching of SiC, the etching being carried out by applying a positive potential to a layer (3; 8) of p-type SiC being in contact with an etching solution containing fluorine ions and having an oxidising effect on SiC. The invention also relates to a method for producing a SiC micro structure having free hanging parts (i.e. diaphragm, cantilever or beam) on a SiC-substrate, a method for producing a MEMS device of SiC having a free hanging structure, and a method for producing a piezo-resistive pressure sensor comprising the step of applying a positive potential to a layer (8) of p-type SiC being in contact with an etching solution containing fluorine ions and having an oxidising effect on SiC.
摘要翻译：本发明涉及一种选择性蚀刻SiC的方法，该蚀刻是通过向与含有氟离子的蚀刻溶液接触并具有氧化效应的p型SiC层（3; 8）施加正电位而进行的在SiC上。本发明还涉及一种用于制造在SiC衬底上具有自由悬挂部分（即隔膜，悬臂或梁）的SiC微结构的方法，用于制造具有自由悬挂结构的SiC的MEMS器件的方法，以及用于制造压阻式压力传感器，包括向与所述氟离子的蚀刻溶液接触并对SiC具有氧化作用的p型SiC层（8）施加正电位的步骤。

82. 发明授权

US6150671A Semiconductor device having high channel mobility and a high breakdown voltage for high power applications 失效
标题翻译：对于高功率应用，具有高沟道迁移率和高击穿电压的半导体器件
公开(公告)号：US6150671A
公开(公告)日：2000-11-21
申请号：US636943
申请日：1996-04-24
申请人： Christopher Harris , Ulf Gustafsson , Mietek Bakowski
发明人： Christopher Harris , Ulf Gustafsson , Mietek Bakowski
IPC分类号： H01L21/04 , H01L29/08 , H01L29/10 , H01L29/24 , H01L29/78 , H01L29/22
CPC分类号： H01L29/7813 , H01L29/66068 , H01L29/0847 , H01L29/1095 , H01L29/1608 , Y10S438/931
摘要： A transistor of SiC having a drain and a highly doped substrate layer is formed on the drain. A highly n type buffer layer may optionally be formed on the substrate layer. A low doped n-type drift layer, a p-type base layer, a high doped n-type source region layer and a source are formed on the substrate layer. An insulating layer with a gate electrode is arranged on top of the base layer and extends substantially laterally from at least the source region layer to a n-type layer. When a voltage is applied to the gate electrode, a conducting inversion channel is formed extending substantially laterally in the base layer at an interface of the p-type base layer and the insulating layer. The p-type base layer is low doped in a region next to the interface to the insulating layer at which the inversion channel is formed and highly doped in a region thereunder next to the drift layer.
摘要翻译：在漏极上形成具有漏极和高掺杂衬底层的SiC晶体管。可以可选地在衬底层上形成高度n型缓冲层。在衬底层上形成低掺杂n型漂移层，p型基极层，高掺杂n型源区域层和源极。具有栅极电极的绝缘层布置在基层的顶部上，并且至少从源极区域基本上横向延伸到n型层。当向栅电极施加电压时，在p型基极层和绝缘层的界面处，在基极层中基本上横向延伸形成导电反转沟道。 p型基层在与形成反型沟道的绝缘层的界面旁边的区域中低掺杂，并且在漂移层旁边的区域中高度掺杂。

83. 发明授权

US6127695A Lateral field effect transistor of SiC, a method for production thereof and a use of such a transistor 有权
标题翻译： SiC的横向场效应晶体管，其制造方法和这种晶体管的使用
公开(公告)号：US6127695A
公开(公告)日：2000-10-03
申请号：US247469
申请日：1999-02-08
申请人： Christopher Harris , Andrei Konstantinov
发明人： Christopher Harris , Andrei Konstantinov
IPC分类号： H01L21/04 , H01L29/24 , H01L29/78 , H01L29/808 , H01L29/812 , H01L31/0312 , H01L21/335
CPC分类号： H01L29/812 , H01L29/1608 , H01L29/66068 , H01L29/7838 , Y10S438/931
摘要： A lateral field effect transistor of SiC for high switching frequencies comprises a source region layer (5) and a drain region layer (6) laterally spaced and highly doped n-type, an n-type channel layer (4) extending laterally and interconnecting the source region layer and the drain region layer for conducting a current between these layers in the on-state of the transistor, and a gate electrode (9) arranged to control the channel layer to be conducting or blocking through varying the potential applied to the gate electrode. A highly doped p-type base layer (12) is arranged next to the channel layer at least partially overlapping the gate electrode and being at a lateral distance to the drain region layer. The base layer is shorted to the source region layer.
摘要翻译：用于高开关频率的SiC的横向场效应晶体管包括横向隔开并且高度掺杂的n型源极区域层（5）和漏极区域层（6），横向延伸的n型沟道层（4）源极区域层和漏极区域层，用于在晶体管的导通状态下传导这些层之间的电流;以及栅电极（9），其布置成通过改变施加到栅极的电位来控制沟道层导通或阻挡电极。在沟道层的旁边配置有高度掺杂的p型基极层（12），至少部分地与栅电极重叠并且与漏极区域处于横向距离。基极层与源极区域短接。

84. 发明授权

US6096627A Method for introduction of an impurity dopant in SiC, a semiconductor device formed by the method and a use of a highly doped amorphous layer as a source for dopant diffusion into SiC 失效
标题翻译：在SiC中引入杂质掺杂剂的方法，通过该方法形成的半导体器件和使用高掺杂非晶层作为掺杂剂扩散到SiC的源
公开(公告)号：US6096627A
公开(公告)日：2000-08-01
申请号：US115813
申请日：1998-07-15
申请人： Christopher Harris , Andrei Konstantinov , Erik Janzen
发明人： Christopher Harris , Andrei Konstantinov , Erik Janzen
IPC分类号： H01L21/22 , C23C14/48 , C30B31/22 , H01L21/04 , H01L21/265 , H01L29/861
CPC分类号： C23C14/48 , C30B31/22 , H01L21/046 , Y10S438/931
摘要： A method for introducing an impurity dopant into a semiconductor layer of SiC is provided. Ions are implanted into the semiconductor layer so that a near surface of the semiconductor layer becomes doped and amorphous. The semiconductor layer is then annealed at a temperature so that the dopant diffuses into a non-implanted sublayer of the semiconductor layer below the near surface layer.
摘要翻译：提供了将杂质掺杂剂引入到SiC的半导体层中的方法。将离子注入到半导体层中，使得半导体层的近表面变得掺杂和无定形。然后半导体层在温度下退火，使得掺杂剂扩散到在近表面层下面的半导体层的未注入的子层中。

85. 发明授权

US6091108A Semiconductor device of SiC having an insulated gate and buried grid region for high breakdown voltage 失效
标题翻译： SiC的半导体器件具有绝缘栅极和用于高击穿电压的掩埋栅极区域
公开(公告)号：US6091108A
公开(公告)日：2000-07-18
申请号：US971682
申请日：1997-11-17
申请人： Christopher Harris , Bo Bijlenga , Lennart Zdansky , Ulf Gustafsson , Mietek Bakowski , Andrey Konstantinov
发明人： Christopher Harris , Bo Bijlenga , Lennart Zdansky , Ulf Gustafsson , Mietek Bakowski , Andrey Konstantinov
IPC分类号： H01L29/16 , H01L21/04 , H01L29/06 , H01L29/12 , H01L29/24 , H01L29/78 , H01L29/745
CPC分类号： H01L29/66068 , H01L29/0623 , H01L29/0634 , H01L29/1608 , H01L29/7395 , H01L29/7802 , H01L29/7813
摘要： A semiconductor device of SiC is adapted to hold high voltages in the blocking state thereof. The device comprises two parts (1, 2) each comprising one or more semiconductor layers of SiC and connected in series between two opposite terminals of the device, namely a sub-semiconductor device (1) able to withstand only low voltages in the blocking state thereof and a voltage-limiting part (2) able to withstand high voltages in the blocking state of the device and adapted to protect said sub-semiconductor device by taking a major part of the voltage over the device in the blocking state thereof.
摘要翻译： SiC的半导体器件适于在其阻挡状态下保持高电压。该器件包括两个部分（1,2），每个部分包括一个或多个SiC半导体层，并且串联连接在器件的两个相对端子之间，即能够仅承受阻塞状态的低电压的子半导体器件（1）以及能够承受器件的阻断状态下的高电压的电压限制部分（2），并且适用于通过在其阻塞状态下将器件的大部分电压占据主要部分来保护所述次半导体器件。

86. 发明授权

US5934283A Pubovaginal sling device 失效
标题翻译：阴道吊带装置
公开(公告)号：US5934283A
公开(公告)日：1999-08-10
申请号：US839777
申请日：1997-04-15
申请人： Germain E. Willem , Christopher Harris , Susan J. Hartjes-Doherty , Daniel G. Holman
发明人： Germain E. Willem , Christopher Harris , Susan J. Hartjes-Doherty , Daniel G. Holman
IPC分类号： A61F2/00 , A61F5/48
CPC分类号： A61F2/0045
摘要： A sling device for surgical implantation into human recipient to support the urethra, the sling including an elongated strip of supple material. The elongated strip has a center portion, opposite first and second side portions, and a slot passing through the center portion, through which one of the side portions can pass, thereby forming a loop in the elongated strip. The material is a biological acceptable material for implantation into the human recipient, preferably selected from the group consisting of synthetic polymers, processed animal tissues, and combination thereof. A method of reducing the incidence of involuntary urination or restoring urinary continence in an incontinent human subject is also disclosed, including the steps of providing a sling device of the type previously described and surgically implanting the sling device in the human subject so that the urethra is biased upward so as to elevate the urethra.
摘要翻译：用于手术植入人接受者以支撑尿道的吊带装置，吊带包括细长的柔软材料条。细长带具有中心部分，相对的第一和第二侧部，以及通过中心部分的槽，侧部中的一个可以通过该槽，从而在细长带中形成环。该材料是用于植入人接受者的生物可接受材料，优选选自合成聚合物，加工动物组织及其组合。还公开了一种减少失禁人体受试者的非自愿排尿或恢复尿路的发生率的方法，包括以下步骤：提供前述类型的吊索装置，并将手术植入吊装装置放置在人体受试者中，使得尿道是向上偏置，以便提升尿道。

87. 发明授权

US5900648A Semiconductor device having an insulated gate 失效
标题翻译：具有绝缘栅极的半导体器件
公开(公告)号：US5900648A
公开(公告)日：1999-05-04
申请号：US829481
申请日：1997-03-28
申请人： Christopher Harris , Andrei Konstantinov , Erik Janzen
发明人： Christopher Harris , Andrei Konstantinov , Erik Janzen
IPC分类号： H01L29/16 , H01L29/12 , H01L29/24 , H01L29/43 , H01L29/51 , H01L29/739 , H01L29/78 , H01L29/80 , H01L31/0312 , H01L31/0256 , H01L29/76 , H01L29/94
CPC分类号： H01L29/518 , H01L29/1608 , H01L29/432 , H01L29/511 , H01L29/7395 , H01L29/7802 , H01L29/802
摘要： A semiconductor device comprises a semiconductor layer of SiC and an insulating layer thereon for insulating the SiC layer with respect to a metal plate constituting a gate and connectable to a voltage for creating a conducting surface channel at a SiC layer-insulating layer interface, wherein at least a portion of the insulating layer closest to the interface is made of a crystalline material which is substantially lattice-matched to SiC and has substantially the same coefficient of thermal expansion as SiC; and wherein the material has AlN as the only component or as a major component of an alloy with insulating properties.
摘要翻译：半导体器件包括SiC半导体层及其上的绝缘层，用于使SiC层相对于构成栅极的金属板绝缘，并且可连接到在SiC层 - 绝缘层界面处产生导电表面沟道的电压，其中在最接近界面的绝缘层的至少一部分由与SiC基本上晶格匹配并且具有与SiC大致相同的热膨胀系数的结晶材料制成; 并且其中所述材料具有作为仅具有绝缘性的合金的组分或作为主要成分的AlN。

88. 外观设计

USD361267S Dispensing container 失效
公开(公告)号：USD361267S
公开(公告)日：1995-08-15
申请号：US15712
申请日：1993-11-24
申请人： Paul A. Harley , Christopher Harris , Brian R. Law
设计人： Paul A. Harley , Christopher Harris , Brian R. Law

89. 发明授权

US5110007A Dispenser 失效
标题翻译：分配器
公开(公告)号：US5110007A
公开(公告)日：1992-05-05
申请号：US402776
申请日：1989-09-05
申请人： Brian R. Law , Christopher Harris
发明人： Brian R. Law , Christopher Harris
IPC分类号： B65D75/34 , B65D83/04
CPC分类号： B65D83/0463 , B65D75/327 , B65D83/0454 , B65D2585/56
摘要： A blister pack (10) comprises a support sheet (12) having a plurality of pockets (14) each of which retains a tablet (25) so that it rests on an edge (24) with its opposing edge (24) adjacent to a frangible cover sheet (20) which closes the pockets. The pockets comprise a support portion (22) which retains the tablets on their edge, and a guide portion (26) for facilitating loading of the tablets (25) into the support portion (22). The blister pack (10) can be mounted on a plate (50) for relative movement therewith, and a tablet (25) ejected from a pocket (14) by pushing the tablet (25) through the frangible cover sheet (20) and then through a dispensing window (67) in the plate (50).
摘要翻译：泡罩包装（10）包括具有多个袋（14）的支撑片（12），每个袋保持片（25），使得其搁置在边缘（24）上，其相对边缘（24）邻近封闭口袋的易碎封面（20）。口袋包括将片剂保持在其边缘上的支撑部分（22）和用于便于将片剂（25）装载到支撑部分（22）中的引导部分（26）。泡罩包装（10）可以安装在板（50）上以与其相对运动，以及通过将片剂（25）推过易碎盖板（20）而从口袋（14）中弹出的片剂（25），然后通过板（50）中的分配窗（67）。

90. 发明授权

US08684167B2 Load pallet sleeve dispensing apparatus 失效
标题翻译：装载托盘套管分配装置
公开(公告)号：US08684167B2
公开(公告)日：2014-04-01
申请号：US13217343
申请日：2011-08-25
申请人： Christopher Harris , Sean Finley
发明人： Christopher Harris , Sean Finley
IPC分类号： B65G47/66
CPC分类号： B65G1/00 , B65G2201/0267
摘要： An apparatus for dispensing a pallet sleeve beneath a load comprises a conveyor component including conveyor elements configured to convey the load thereon in a first direction, one or more stations spaced apart along the first direction and a mechanism for changing the relative vertical positions of the conveyor elements and the stations. The apparatus further includes a pallet sleeve dispenser adjacent the conveyor component and configured for storing pallet sleeves in spaced apart sections aligned with a corresponding station. A drive element associated with each of the stations is configured to engage a pallet sleeve to drive the pallet sleeve from the dispenser to the conveyor component in a second direction substantially perpendicular to the first direction. A retention mechanism is provided to support a stack of pallet sleeves above a lowermost sleeve being driven from the dispenser to the position underneath the load on the conveyor component.
摘要翻译：用于在货物下方分配托盘套筒的装置包括输送机部件，其包括构造成沿第一方向输送负载的输送机元件，沿着第一方向间隔开的一个或多个工位，以及用于改变输送机的相对垂直位置的机构元素和电台。该装置还包括邻近传送器部件的托盘套筒分配器，并且构造成用于将托盘套筒存储在与对应站对齐的间隔开的部分中。与每个站相关联的驱动元件构造成接合托盘套筒，以在基本上垂直于第一方向的第二方向上将托盘套筒从分配器驱动到输送机部件。提供保持机构以支撑从分配器驱动到输送机部件上的负载下方的最下层套筒之上的托盘套筒的堆叠。

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