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2. 发明授权

US4645560A Liquid encapsulation method for growing single semiconductor crystals 失效
标题翻译：用于生长单个半导体晶体的液体封装方法
公开(公告)号：US4645560A
公开(公告)日：1987-02-24
申请号：US644009
申请日：1984-08-24
申请人： Kazuhisa Matsumoto , Hiroshi Morishita , Shinichi Akai , Shintaro Miyazawa
发明人： Kazuhisa Matsumoto , Hiroshi Morishita , Shinichi Akai , Shintaro Miyazawa
IPC分类号： C30B15/14 , C30B27/02 , C30B29/42 , H01L21/208 , C30B15/22
CPC分类号： C30B15/14
摘要： A liquid encapsulation Czockralski method for growing a single crystal of a semiconductor compound which comprises: melting a semiconductor compound in the presence of a B.sub.2 O.sub.3 liquid encapsulant to form a two phase liquid; dipping a semiconductor seed crystal into the compound melt covered with the B.sub.2 O.sub.3 encapsulant; growing the crystal from the compound melt by pulling up and rotating the seed crystal; and, cooling the crystal in a cooling zone above a crucible. The cooling zone is maintained at a substantially uniform temperature distribution with a small temperature gradient by using primarily an independently controlled crystal cooling zone heater H3. In addition, an independently controlled melt heater H1 and an independently controlled crystal growing heater H2 are employed. Also, a crystal cooling zone heat shield 11 can be provided to aid in slowly cooling the grown crystal in the substantially uniform temperature distribution. Preferably, a crystal cooling zone heater H3 is employed to control the temperature distribution in the cooling zone. The semiconductor crystals produced by employing the process and apparatus of the invention are substantially crack-free both before and after grinding and cutting. Also the etch pitch density (EPD) of the semiconductor crystal material is significantly lower than conventionally produced material.
摘要翻译：一种用于生长半导体化合物的单晶的液体封装Czockralski方法，其包括：在B 2 O 3液体密封剂存在下熔融半导体化合物以形成两相液体; 将半导体晶种浸入用B2O3密封剂覆盖的化合物熔体中; 通过拉起和旋转晶种从复合熔体生长晶体; 并且在坩埚上方的冷却区中冷却晶体。主要使用独立控制的晶体冷却区加热器H3，冷却区以较小的温度梯度保持在基本上均匀的温度分布。此外，采用独立控制的熔融加热器H1和独立控制的晶体生长加热器H2。此外，可以提供晶体冷却区隔热板11，以帮助以基本均匀的温度分布缓慢冷却生长的晶体。优选地，使用晶体冷却区加热器H3来控制冷却区中的温度分布。通过使用本发明的方法和设备制造的半导体晶体在研磨和切割之前和之后都是基本无裂纹的。此外，半导体晶体材料的蚀刻间距密度（EPD）显着低于常规生产的材料。

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