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1. 发明授权

US08304334B2 III-V compound crystal and semiconductor electronic circuit element 有权
公开(公告)号：US08304334B2
公开(公告)日：2012-11-06
申请号：US13368329
申请日：2012-02-07
申请人： Seiji Nakahata , Koji Uematsu , Ryu Hirota
发明人： Seiji Nakahata , Koji Uematsu , Ryu Hirota
IPC分类号： H01L21/28
CPC分类号： C30B25/02 , C30B25/183 , C30B29/40 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/0242 , H01L21/02455 , H01L21/02458 , H01L21/02538 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02642 , H01L21/02647 , H01S5/323
摘要： Favorable-quality III-V crystals are easily obtained at low cost without causing cracks, even when using a variety of substrates, and can be used to manufacture semiconductor devices with good quality and at high yields. The III-V crystals are characterized by the following properties: the carrier concentration, resistivity, and dislocation density of the III-V compound crystal are uniform to within ±30% variation along the surface; the III-V compound crystal is misoriented from the c-plane such that the crystal surface does not include any region where its off-axis angle with the c-plane is 0°; and the full width at half-maximum in XRD at the crystal center of the III-V compound is not greater than 150 arcsec.

2. 发明授权

US07858502B2 Fabrication method and fabrication apparatus of group III nitride crystal substance 有权
标题翻译： III族氮化物晶体物质的制造方法和制造装置
公开(公告)号：US07858502B2
公开(公告)日：2010-12-28
申请号：US12540492
申请日：2009-08-13
申请人： Hitoshi Kasai , Takuji Okahisa , Shunsuke Fujita , Naoki Matsumoto , Hideyuki Ijiri , Fumitaka Sato , Kensaku Motoki , Seiji Nakahata , Koji Uematsu , Ryu Hirota
发明人： Hitoshi Kasai , Takuji Okahisa , Shunsuke Fujita , Naoki Matsumoto , Hideyuki Ijiri , Fumitaka Sato , Kensaku Motoki , Seiji Nakahata , Koji Uematsu , Ryu Hirota
IPC分类号： H01L21/00
CPC分类号： H01L21/02617 , C23C16/303 , C23C16/4405 , C23C16/4488 , C30B23/02 , C30B25/02 , C30B29/403
摘要： A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided.
摘要翻译： III族氮化物晶体物质的制造方法包括以下步骤：通过将HCl气体引入反应室来清洗反应室的内部，并将III族氮化物结晶物质气相沉积在清洁的反应室中。 III族氮化物晶体物质的制造装置包括将HCl气体引入反应室的结构，以及通过HVPE生长III族氮化物结晶物质的结构。因此，提供了包括在晶体生长期间有效清洁附着在反应室内的沉积物的方法的III族氮化物晶体物质的制造方法以及制造方法中使用的制造装置。

3. 发明授权

US07772585B2 Nitride semiconductor substrate and method of producing same 有权
标题翻译：氮化物半导体衬底及其制造方法
公开(公告)号：US07772585B2
公开(公告)日：2010-08-10
申请号：US11446955
申请日：2006-06-06
申请人： Koji Uematsu , Fumitaka Sato , Ryu Hirota , Seiji Nakahata , Hideaki Nakahata
发明人： Koji Uematsu , Fumitaka Sato , Ryu Hirota , Seiji Nakahata , Hideaki Nakahata
IPC分类号： H01L31/00 , C30B25/00 , H01L21/00
CPC分类号： C30B29/403 , C30B25/18 , C30B29/406 , H01L21/0237 , H01L21/02395 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02631 , H01L21/02639 , H01L21/02642 , H01L21/02647
摘要： A nitride semiconductor crystal substrate is produced by forming a network mask repeating a closed loop unit shape upon an undersubstrate, growing a nitride semiconductor crystal in vapor phase, producing convex facet hills covered with facets on exposed parts Π, forming outlining concavities on mask-covered parts , not burying the facets, maintaining the convex facet hills on Π and the network concavities on , excluding dislocations in the facet hills down to the outlining concavities on , forming a defect accumulating region H on , decreasing dislocations in the facet hills and improving the facet hills to low defect density single crystal regions Z, producing a rugged nitride crystal, and slicing and polishing the nitride crystal into mirror nitride crystal wafers. After the fabrication of devices on the nitride wafer, dry-etching or wet etching of hot KOH or NaOH divides the device-carrying wafer into chips by corroding the network defect accumulating region H.
摘要翻译：通过在下衬底上形成重复闭环单元形状的网络掩模，在气相中生长氮化物半导体晶体，产生在暴露部分“Pgr”上覆盖有小面的凸面小丘，从而形成氮化物半导体晶体衬底; 覆盖部分，不掩埋小面，保持凸面小丘在＆Pgr; 和网络凹面，不考虑小平面上的位错，形成凹陷凹陷，形成缺陷积聚区H，减小了小平面山丘的位错，改善了小丘到低缺陷密度单晶区Z，产生了坚固的氮化物晶体，并将氮化物晶体切割和研磨成镜状氮化物晶片。在氮化物晶片上的器件制造之后，通过腐蚀网络缺陷累积区域H将热的KOH或NaOH的干蚀刻或湿法蚀刻将装载的晶片分成芯片。

4. 发明授权

US07655960B2 A1xInyGa1-x-yN mixture crystal substrate, method of growing same and method of producing same 有权
标题翻译： AlxInyGa1-x-yN混合晶体基板，其生长方法及其制造方法
公开(公告)号：US07655960B2
公开(公告)日：2010-02-02
申请号：US11501817
申请日：2006-08-10
申请人： Seiji Nakahata , Ryu Hirota , Kensaku Motoki , Takuji Okahisa , Kouji Uematsu
发明人： Seiji Nakahata , Ryu Hirota , Kensaku Motoki , Takuji Okahisa , Kouji Uematsu
IPC分类号： H01L33/00
CPC分类号： C30B29/406 , C30B25/02 , C30B25/18 , C30B25/183 , C30B29/40 , C30B29/403 , H01L21/02381 , H01L21/02395 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/02642 , H01L21/02647
摘要： Seeds are implanted in a regular pattern upon an undersubstrate. An AlxInyGa1−x−yN (0≦x≦1, 0≦y≦1, 0
摘要翻译：将种子以规则的图案植入到下衬底上。通过小面生长法在种子植入的底层上生长Al x In y Ga 1-x-y N（0 <= x <= 1,0 <= y <= 1,0

5. 发明申请

US20100009526A1 FABRICATION METHOD AND FABRICATION APPARATUS OF GROUP III NITRIDE CRYSTAL SUBSTANCE 有权
标题翻译：第III组氮化物晶体的制造方法和制造装置
公开(公告)号：US20100009526A1
公开(公告)日：2010-01-14
申请号：US12540492
申请日：2009-08-13
申请人： Hitoshi KASAI , Takuji OKAHISA , Shunsuke FUJITA , Naoki MATSUMOTO , Hideyuki IJIRI , Fumitaka SATO , Kensaku MOTOKI , Seiji NAKAHATA , Koji UEMATSU , Ryu HIROTA
发明人： Hitoshi KASAI , Takuji OKAHISA , Shunsuke FUJITA , Naoki MATSUMOTO , Hideyuki IJIRI , Fumitaka SATO , Kensaku MOTOKI , Seiji NAKAHATA , Koji UEMATSU , Ryu HIROTA
IPC分类号： H01L21/203
CPC分类号： H01L21/02617 , C23C16/303 , C23C16/4405 , C23C16/4488 , C30B23/02 , C30B25/02 , C30B29/403
摘要： A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided.
摘要翻译： III族氮化物晶体物质的制造方法包括以下步骤：通过将HCl气体引入反应室来清洗反应室的内部，并将III族氮化物结晶物质气相沉积在清洁的反应室中。 III族氮化物晶体物质的制造装置包括将HCl气体引入反应室的结构，以及通过HVPE生长III族氮化物结晶物质的结构。因此，提供了包括在晶体生长期间有效清洁附着在反应室内的沉积物的方法的III族氮化物晶体物质的制造方法以及制造方法中使用的制造装置。

6. 发明申请

US20090032907A1 Method for Producing GaxIn1-xN(0) Crystal Gaxin1-xn(0 审中-公开
标题翻译：生产GaxIn1-xN（0x）晶体Gaxin1-xn（0
公开(公告)号：US20090032907A1
公开(公告)日：2009-02-05
申请号：US11919705
申请日：2006-08-17
申请人： Tomoki Uemura , Shinsuke Fujiwara , Takuji Okahisa , Ryu Hirota , Hideaki Nakahata
发明人： Tomoki Uemura , Shinsuke Fujiwara , Takuji Okahisa , Ryu Hirota , Hideaki Nakahata
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： C30B25/02 , C30B25/10 , C30B29/403 , C30B29/406
摘要： It seems that a conventional method for producing a GaN crystal by using HVPE has a possibility that the crystallinity of a GaN crystal can be improved by producing a GaN crystal at a temperature higher than 1100° C. However, such a conventional method has a problem in that a quartz reaction tube (1) is melted when heated by heaters (5) and (6) to a temperature higher than 1100° C.Disclosed herein is a method for producing a GaxIn1-xN (0≦x≦1) crystal (12) by growing GaxIn1-xN (0≦x≦1) crystal (12) on the surface of a base substrate (7) by the reaction of a material gas, containing ammonia gas and at least one of a gallium halide gas and an indium halide gas, in a quartz reaction tube (1), wherein during the growth of GaxIn1-xN (0≦x≦1) crystal (12), quartz reaction tube (1) is externally heated and base substrate (7) is individually heated.
摘要翻译：看来，通过使用HVPE制造GaN晶体的常规方法可能通过在高于1100℃的温度下生成GaN晶体来提高GaN晶体的结晶度。然而，这种常规方法具有问题因为当加热器（5）和（6）加热时，石英反应管（1）熔化到高于1100℃的温度。本文公开了一种制备GaxIn1-xN（0≤x≤1））晶体（12）通过使含有氨气体的材料气体与至少一种以上的气体的反应在基底基板（7）的表面上生长GaxIn1-xN（0 <= x <= 1）晶体（12）在石英反应管（1）中，在GaxIn1-xN（0 <= x <= 1）晶体（12）生长期间，石英反应管（1）被外部加热，基底基板（7）被单独加热。

7. 发明申请

US20080006201A1 Method of growing gallium nitride crystal 审中-公开
标题翻译：生长氮化镓晶体的方法
公开(公告)号：US20080006201A1
公开(公告)日：2008-01-10
申请号：US11826798
申请日：2007-07-18
申请人： Ryu Hirota , Kensaku Motoki , Seiji Nakahata , Takuji Okahisa , Koji Uematsu
发明人： Ryu Hirota , Kensaku Motoki , Seiji Nakahata , Takuji Okahisa , Koji Uematsu
IPC分类号： C30B25/04
CPC分类号： C30B25/183 , C30B23/025
摘要： The facet growth method grows GaN crystals by preparing an undersubstrate, forming a dotmask or a stripemask on the undersubstrate, growing GaN in vapor phase, causing GaN growth on exposed parts, suppressing GaN from growing on masks, inducing facets starting from edges of the masks and rising to tops of GaN crystals on exposed parts, maintaining the facets, making defect accumulating regions H on masked parts. attracting dislocations into the defect accumulating regions H on masks and reducing dislocation density of the surrounding GaN crystals on exposed parts. The defect accumulating regions H on masks have four types. The best of the defect accumulating regions H is an inversion region J. Occurrence of the inversion regions J requires preceding appearance of beaks with inversion orientation on the facets. Sufficient inversion regions J are produced at an initial stage by maintaining the temperature Tj at 900° C. to 990° C. without fail. Allowable inversion regions J beaks are produced at an initial stage by the sets of temperatures T(K) and growing speeds Vj (μm/h) satisfying −4.39×105/T+3.87×102
摘要翻译：小面生长方法通过制备下衬底，在下衬底上形成点阵掩模或剥离掩模来生长GaN晶体，在气相中生长GaN，在曝光部分上生长GaN，抑制GaN在掩模上生长，从掩模的边缘开始引起刻面并在暴露部分上升到GaN晶体的顶部，保持刻面，使掩模部件上的缺陷积聚区域H。在掩模上吸引缺陷积聚区H的位错，并降低暴露部分周围GaN晶体的位错密度。掩模上的缺陷积聚区域H具有四种类型。缺陷累积区域H中的最好的是反转区域J.反转区域J的出现需要在面上具有反转取向的喙前面的出现。通过将温度Tj保持在900℃至990℃而在初始阶段产生足够的反转区域J. 在初始阶段通过温度T（K）和生长速度Vj（mum / h）的集合产生允许的反转区域J喙，满足-4.39×10 5 / T +3.87×10 2

8. 发明授权

US07303630B2 Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate 失效
标题翻译：生长GaN晶体的方法，单晶GaN衬底的制造方法和单晶GaN衬底
公开(公告)号：US07303630B2
公开(公告)日：2007-12-04
申请号：US10933291
申请日：2004-09-03
申请人： Kensaku Motoki , Takuji Okahisa , Ryu Hirota , Seiji Nakahata , Koji Uematsu
发明人： Kensaku Motoki , Takuji Okahisa , Ryu Hirota , Seiji Nakahata , Koji Uematsu
IPC分类号： C30B21/08
CPC分类号： C30B29/40 , C30B25/18
摘要： Dotted seeds are implanted in a regular pattern upon an undersubstrate. A GaN crystal is grown on the seed implanted undersubstrate by a facet growth method. The facet growth makes facet pits above the seeds. The facets assemble dislocations from neighboring regions, accumulate the dislocations into pit bottoms, and make closed defect accumulating regions (H) on the seeds. The polycrystalline or slanting orientation single crystal closed defect accumulating regions (H) induce microcracks due to thermal expansion anisotropy. The best one is orientation-inversion single crystal closed defect accumulating regions (H). At an early stage, orientation-inverse protrusions are induced on tall facets and unified with each other above the seeds. Orientation-inverse crystals growing on the unified protrusions become the orientation-inverse single crystal closed defect accumulating regions (H).
摘要翻译：点状种子以规则图案植入下衬底。通过小面生长法在种植植入的底物上生长GaN晶体。小面生长使种子凹陷在种子上方。方面组装相邻区域的位错，将位错累积到坑底，并在种子上形成闭合缺陷积聚区（H）。多晶或倾斜取向单晶闭合缺陷积聚区（H）由于热膨胀各向异性而引起微裂纹。最好的是定向反转单晶闭合缺陷积聚区（H）。在早期阶段，在高面上诱导取向反突起，并在种子之上彼此统一。在均匀突起上生长的取向反相晶体成为取向反单晶闭合缺陷积聚区（H）。

9. 发明授权

US07288151B2 Method of manufacturing group-III nitride crystal 有权
标题翻译： III族氮化物晶体的制造方法
公开(公告)号：US07288151B2
公开(公告)日：2007-10-30
申请号：US10999338
申请日：2004-11-29
申请人： Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Ryu Hirota
发明人： Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Ryu Hirota
IPC分类号： C30B11/14
CPC分类号： C30B29/403 , C30B11/00 , C30B11/04 , C30B29/406
摘要： There is provided a method of manufacturing a group-III nitride crystal in which a nitrogen plasma is brought into contact with a melt containing a group-III element and an alkali metal to grow the group-III nitride crystal. Furthermore, there is also provided a method of manufacturing a group-III nitride crystal in which the group-III nitride crystal is grown on a substrate placed in a melt containing a group-III element and an alkali metal, with a minimal distance between a surface of the melt and a surface of the substrate set to be at most 50 mm.
摘要翻译：提供了一种制造III族氮化物晶体的方法，其中使氮等离子体与含有III族元素和碱金属的熔体接触以生长III族氮化物晶体。此外，还提供了一种III族氮化物晶体的制造方法，其中III族氮化物晶体在放置在含有III族元素和碱金属的熔体中的基板上生长，其中熔体的表面和基板的表面设定为至多50mm。

10. 发明授权

US07087114B2 Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrate 有权
公开(公告)号：US07087114B2
公开(公告)日：2006-08-08
申请号：US10265719
申请日：2002-10-08
申请人： Kensaku Motoki , Ryu Hirota , Takuji Okahisa , Seiji Nakahata
发明人： Kensaku Motoki , Ryu Hirota , Takuji Okahisa , Seiji Nakahata
IPC分类号： C30B25/16
CPC分类号： C30B29/406 , C30B23/002 , C30B25/02 , C30B29/403
摘要： A low dislocation density GaN single crystal substrate is made by forming a seed mask having parallel stripes regularly and periodically aligning on an undersubstrate, growing a GaN crystal on a facet-growth condition, forming repetitions of parallel facet hills and facet valleys rooted upon the mask stripes, maintaining the facet hills and facet valleys, producing voluminous defect accumulating regions (H) accompanying the valleys, yielding low dislocation single crystal regions (Z) following the facets, making C-plane growth regions (Y) following flat tops between the facets, gathering dislocations on the facets into the valleys by the action of the growing facets, reducing dislocations in the low dislocation single crystal regions (Z) and the C-plane growth regions (Y), and accumulating the dislocations in cores (S) or interfaces (K) of the voluminous defect accumulating regions (H).

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