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1. 发明专利

JP2014123692A Photovoltaic element and process of manufacturing the same 有权
标题翻译：光伏元件及其制造方法
公开(公告)号：JP2014123692A
公开(公告)日：2014-07-03
申请号：JP2012289386
申请日：2012-12-19
申请人： Junji Hirokane , 順司廣兼
发明人： HIROKANE JUNJI
IPC分类号： H01L31/06
CPC分类号： Y02E10/548
摘要： PROBLEM TO BE SOLVED: To form in a simple process electrodes composed of a p-type amorphous silicon film and an n-type amorphous silicon film on an i-type amorphous silicon film formed on a rear surface of an n-type crystal silicon substrate.SOLUTION: An i-type amorphous silicon film 6 is formed on a rear surface of an n-type single crystal silicon substrate 1. In a first area of the i-type amorphous silicon film 6, a p-type amorphous silicon film 9 in which p-type impurities are diffused is formed. In a second area of the i-type amorphous silicon film 6, an n-type amorphous silicon film 8 in which n-type impurities are diffused is formed.
摘要翻译：要解决的问题：为了简单地形成在n型晶体硅衬底的后表面上形成的i型非晶硅膜上由p型非晶硅膜和n型非晶硅膜构成的电极解决方案：在n型单晶硅衬底1的后表面上形成i型非晶硅膜6.在i型非晶硅膜6的第一区域中，p型非晶硅膜9 其中形成p型杂质扩散。在i型非晶硅膜6的第二区域中，形成n型杂质扩散的n型非晶硅膜8。

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