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    • 1. 发明专利
    • Photovoltaic element and process of manufacturing the same
    • 光伏元件及其制造方法
    • JP2014123692A
    • 2014-07-03
    • JP2012289386
    • 2012-12-19
    • Junji Hirokane順司 廣兼
    • HIROKANE JUNJI
    • H01L31/06
    • Y02E10/548
    • PROBLEM TO BE SOLVED: To form in a simple process electrodes composed of a p-type amorphous silicon film and an n-type amorphous silicon film on an i-type amorphous silicon film formed on a rear surface of an n-type crystal silicon substrate.SOLUTION: An i-type amorphous silicon film 6 is formed on a rear surface of an n-type single crystal silicon substrate 1. In a first area of the i-type amorphous silicon film 6, a p-type amorphous silicon film 9 in which p-type impurities are diffused is formed. In a second area of the i-type amorphous silicon film 6, an n-type amorphous silicon film 8 in which n-type impurities are diffused is formed.
    • 要解决的问题:为了简单地形成在n型晶体硅衬底的后表面上形成的i型非晶硅膜上由p型非晶硅膜和n型非晶硅膜构成的电极 解决方案:在n型单晶硅衬底1的后表面上形成i型非晶硅膜6.在i型非晶硅膜6的第一区域中,p型非晶硅膜9 其中形成p型杂质扩散。 在i型非晶硅膜6的第二区域中,形成n型杂质扩散的n型非晶硅膜8。
    • 9. 发明授权
    • Magneto-optical recording medium
    • 磁光记录介质
    • US6117544A
    • 2000-09-12
    • US336094
    • 1999-06-18
    • Junji HirokaneNoboru IwataAkira Takahashi
    • Junji HirokaneNoboru IwataAkira Takahashi
    • G11B11/10G11B11/105G11B5/66
    • G11B11/10593G11B11/10584G11B11/10515Y10S428/90
    • A recording layer and a flux adjustment layer have different magnetic polarities so that their magnetizations are countervailed at room temperature, with the result that a weakened leakage magnetic flux is released therefrom. A reproducing layer, a reproducing assist layer and an in-plane magnetization layer exhibit in-plane magnetization at room temperature. In a first temperature area having a temperature not more than the critical temperature of the reproducing layer, the reproducing layer 1 exhibits in-plane magnetization so that magnetization of a recording magnetic domain is not copied to the reproducing layer. In contrast, a second temperature area having a temperature rise between the critical temperature and the Curie temperature of the reproducing layer, the flux adjustment layer and the in-plane magnetization layer have reached their Curie temperatures and lost their magnetization; thus, a leakage magnetic flux generated by the magnetization of the recording magnetic domain is copied to the reproducing assist layer that is in a perpendicular magnetization state, and further copied to the reproducing layer. Moreover, in a third temperature area having a temperature rise exceeding the Curie temperature of the reproducing layer, the reproducing layer has lost its magnetization.
    • 记录层和磁通调节层具有不同的磁极性,使得它们的磁化在室温下抵消,结果是从其中释放出弱化的漏磁通。 再现层,再现辅助层和平面内磁化层在室温下表现出平面内的磁化强度。 在温度不超过再生层的临界温度的第一温度区域中,再现层1表现出平面内的磁化,使得记录磁畴的磁化不被复制到再现层。 相反,具有临界温度和再生层的居里温度之间的温度上升的第二温度区域,通量调节层和面内磁化层已经达到居里温度并失去其磁化强度; 因此,由记录磁畴的磁化产生的泄漏磁通被复制到处于垂直磁化状态的再现辅助层,并进一步复制到再现层。 此外,在温度升高超过再现层的居里温度的第三温度区域中,再现层已经失去其磁化。