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    • 10. 发明授权
    • Epitaxially deposited source/drain
    • 外延沉积源/漏极
    • US07060576B2
    • 2006-06-13
    • US10692696
    • 2003-10-24
    • Nick LindertAnand S. MurthyJustin K. Brask
    • Nick LindertAnand S. MurthyJustin K. Brask
    • H01L21/337H01L21/8238H01L21/336
    • H01L29/66628H01L29/66636
    • An epitaxially deposited source/drain extension may be formed for a metal oxide semiconductor field effect transistor. A sacrificial layer may be formed and etched away to undercut under the gate electrode. Then a source/drain extension of epitaxial silicon may be deposited to extend under the edges of the gate electrode. As a result, the extent by which the source/drain extension extends under the gate may be controlled by controlling the etching of the sacrificial material. Its thickness and depth may be controlled by controlling the deposition process. Moreover, the characteristics of the source/drain extension may be controlled independently of those of the subsequently formed deep or heavily doped source/drain junction.
    • 可以为金属氧化物半导体场效应晶体管形成外延沉积的源极/漏极延伸。 可以形成牺牲层并蚀刻掉在栅电极下方的底切。 然后,可以沉积外延硅的源极/漏极延伸部,以在栅电极的边缘下延伸。 结果,可以通过控制牺牲材料的蚀刻来控制源极/漏极延伸在栅极下延伸的程度。 其厚度和深度可以通过控制沉积过程来控制。 此外,可以独立于后续形成的深度或重掺杂源极/漏极结的特性来控制源极/漏极延伸的特性。