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1. 发明申请

US20120135609A1 Apparatus and Process for Atomic Layer Deposition 审中-公开
标题翻译：原子层沉积的装置和工艺
公开(公告)号：US20120135609A1
公开(公告)日：2012-05-31
申请号：US12956650
申请日：2010-11-30
申请人： Joseph Yudovsky , Tatsuya Sato , Kenric Choi , Anh N. Nguyen , Faruk Gungor
发明人： Joseph Yudovsky , Tatsuya Sato , Kenric Choi , Anh N. Nguyen , Faruk Gungor
IPC分类号： H01L21/30 , B67D7/06
CPC分类号： C23C16/45565 , C23C16/45548 , C23C16/45574
摘要： Provided are gas distribution plates (showerheads) for use in an apparatus configured to form a film during, for example, an atomic layer deposition (ALD) process. The gas distribution plate comprises a body defining a thickness and a peripheral edge and has a front surface for facing the substrate. The front surface has a central region with a plurality of openings configured to distribute process gases over the substrate and a focus ring with a sloped region. The focus ring is concentric to the central region such that the thickness at the focus ring is greater than the thickness at the central region.
摘要翻译：提供了用于在例如原子层沉积（ALD）工艺期间形成膜的装置中使用的气体分配板（喷头）。气体分配板包括限定厚度和外围边缘的主体，并且具有面向基板的前表面。前表面具有中心区域，其具有多个开口，其被配置成在衬底上分配工艺气体和具有倾斜区域的聚焦环。聚焦环与中心区域同心，使得聚焦环处的厚度大于中心区域处的厚度。

2. 发明授权

US07947131B2 Copper deposition chamber having integrated bevel clean with edge bevel removal detection 失效
标题翻译：铜沉积室具有整体斜面清洁和边缘斜面去除检测
公开(公告)号：US07947131B2
公开(公告)日：2011-05-24
申请号：US12783391
申请日：2010-05-19
申请人： Chen-An Chen , Anh N. Nguyen , Manoocher Birang
发明人： Chen-An Chen , Anh N. Nguyen , Manoocher Birang
IPC分类号： B08B7/04
CPC分类号： H01L21/6708 , H01L21/67253
摘要： Embodiments of the invention generally provide apparatus and method for detecting and controlling edge bevel removal of a semiconductor substrate. One embodiment of the present invention provides an apparatus for inspecting a rotating substrate. The apparatus comprises a substrate support configured to support the rotating substrate on a back side and rotate the substrate about a central axis, and a sensor positioned above the substrate support, the sensor being configured to inspect a front side of the rotating substrate while moving simultaneously radially across the substrate.
摘要翻译：本发明的实施例通常提供用于检测和控制半导体衬底的边缘斜面去除的装置和方法。本发明的一个实施例提供一种用于检查旋转基片的装置。该装置包括：衬底支撑件，被配置为在后侧支撑旋转衬底并围绕中心轴线旋转衬底;以及位于衬底支撑件上方的传感器，该传感器被配置为在同时移动的同时检查旋转衬底的前侧径向穿过衬底。

3. 发明申请

US20100218784A1 COPPER DEPOSITION CHAMBER HAVING INTEGRATED BEVEL CLEAN WITH EDGE BEVEL REMOVAL DETECTION 失效
标题翻译：具有边缘水平检测的集成水平清洁的铜沉积室
公开(公告)号：US20100218784A1
公开(公告)日：2010-09-02
申请号：US12783391
申请日：2010-05-19
申请人： CHEN-AN CHEN , Anh N. Nguyen , Manoocher Birang
发明人： CHEN-AN CHEN , Anh N. Nguyen , Manoocher Birang
IPC分类号： G01N21/55 , B08B7/04
CPC分类号： H01L21/6708 , H01L21/67253
摘要： Embodiments of the invention generally provide apparatus and method for detecting and controlling edge bevel removal of a semiconductor substrate. One embodiment of the present invention provides an apparatus for inspecting a rotating substrate. The apparatus comprises a substrate support configured to support the rotating substrate on a back side and rotate the substrate about a central axis, and a sensor positioned above the substrate support, the sensor being configured to inspect a front side of the rotating substrate while moving simultaneously radially across the substrate.
摘要翻译：本发明的实施例通常提供用于检测和控制半导体衬底的边缘斜面去除的装置和方法。本发明的一个实施例提供一种用于检查旋转基片的装置。该装置包括：衬底支撑件，被配置为在后侧支撑旋转衬底并围绕中心轴线旋转衬底;以及位于衬底支撑件上方的传感器，该传感器被配置为在同时移动的同时检查旋转衬底的前侧径向穿过衬底。

4. 发明授权

US07520939B2 Integrated bevel clean chamber 失效
标题翻译：集成斜面清洁室
公开(公告)号：US07520939B2
公开(公告)日：2009-04-21
申请号：US10826492
申请日：2004-04-16
申请人： Henry Ho , Lily L. Pang , Anh N. Nguyen , Alexander N. Lerner
发明人： Henry Ho , Lily L. Pang , Anh N. Nguyen , Alexander N. Lerner
IPC分类号： B08B3/00
CPC分类号： H01L21/68 , B08B3/02 , H01L21/67034 , H01L21/67051 , H01L21/6838
摘要： A method and apparatus for cleaning the bevel of a semiconductor substrate. The apparatus generally includes a cell body having upstanding walls and a fluid drain basin, a rotatable vacuum chuck positioned centrally positioned in the fluid drain basin, and at least 3 substrate centering members positioned at equal radial increments around the rotatable vacuum chuck. The substrate centering members include a vertically oriented shaft having a longitudinal axis extending therethrough, a cap member positioned over an upper terminating end of the shaft, a raised central portion formed onto the cap member, the raised central portion having a maximum thickness at a location the coincides with the longitudinal axis, and a substrate centering post positioned on the cap member radially outward of the raised central portion, an upper terminating end of the substrate centering post extending from the cap member to a distance that exceeds the maximum thickness. The apparatus further includes a centering actuation mechanism in communication with the substrate centering posts, and a fluid dispensing arm pivotally connected to the cell body, the fluid dispensing arm being configured to dispense a processing fluid onto a first side of the substrate.
摘要翻译：一种用于清洁半导体衬底的斜面的方法和设备。该装置通常包括具有直立壁的细胞体和流体排放盆，位于流体排放盆中心定位的可旋转真空吸盘，以及围绕可旋转真空吸盘以相等的径向增量定位的至少3个基体定心构件。基板定心构件包括垂直定向的轴，其具有延伸穿过其中的纵向轴线;盖构件，其定位在所述轴的上终端上方;凸起中心部分形成在所述盖构件上，所述凸起中心部分在位置处具有最大厚度与纵向轴线重合，以及定位在凸起中心部分的径向外侧的盖构件上的基板定心柱，该基板定心柱的上终端从盖构件延伸至超过最大厚度的距离。所述装置还包括与所述基板定心柱连通的定心致动机构，以及可枢转地连接到所述电池体的流体分配臂，所述流体分配臂构造成将处理流体分配到所述基板的第一侧上。

5. 发明授权

US07223323B2 Multi-chemistry plating system 失效
标题翻译：多化学电镀系统
公开(公告)号：US07223323B2
公开(公告)日：2007-05-29
申请号：US10616284
申请日：2003-07-08
申请人： Michael X. Yang , Ming Xi , Russell C. Ellwanger , Eric B. Britcher , Bernardo Donoso , Lily L. Pang , Svetlana Sherman , Henry Ho , Anh N. Nguyen , Alexander N. Lerner , Allen L. D'Ambra , Arulkumar Shanmugasundram , Tetsuya Ishikawa , Yevgeniy Rabinovich , Dmitry Lubomirsky , Yeuk-Fai Edwin Mok , Son T. Nguyen
发明人： Michael X. Yang , Ming Xi , Russell C. Ellwanger , Eric B. Britcher , Bernardo Donoso , Lily L. Pang , Svetlana Sherman , Henry Ho , Anh N. Nguyen , Alexander N. Lerner , Allen L. D'Ambra , Arulkumar Shanmugasundram , Tetsuya Ishikawa , Yevgeniy Rabinovich , Dmitry Lubomirsky , Yeuk-Fai Edwin Mok , Son T. Nguyen
IPC分类号： C25B9/12 , C35D3/38 , B08B3/02
CPC分类号： H01L21/6719 , A23D7/00 , A23D7/005 , A23D7/01 , A23J7/00 , B08B3/02 , C25D7/123 , C25D17/001 , C25D17/002 , C25D17/02 , C25D21/02 , C25D21/08 , H01L21/67028 , H01L21/67034 , H01L21/67051 , H01L21/67109 , H01L21/6715 , H01L21/67196 , H01L21/6723 , H01L21/68 , H01L21/6838 , H01L21/68707
摘要： Embodiments of the invention generally provide an electrochemical plating system. The plating system includes a substrate loading station positioned in communication with a mainframe processing platform, at least one substrate plating cell positioned on the mainframe, at least one substrate bevel cleaning cell positioned on the mainframe, and a stacked substrate annealing station positioned in communication with at least one of the mainframe and the loading station, each chamber in the stacked substrate annealing station having a heating plate, a cooling plate, and a substrate transfer robot therein.
摘要翻译：本发明的实施方案通常提供电化学电镀系统。电镀系统包括位于与主机处理平台连通的基板装载站，位于主机上的至少一个基板镀覆单元，位于主机上的至少一个基板斜面清洁单元，以及与主机和加载站中的至少一个，层叠基板退火站中的每个室具有加热板，冷却板和基板传送机器人。

6. 发明授权

US06734020B2 Valve control system for atomic layer deposition chamber 有权
标题翻译：用于原子层沉积室的阀门控制系统
公开(公告)号：US06734020B2
公开(公告)日：2004-05-11
申请号：US09800881
申请日：2001-03-07
申请人： Siqing Lu , Yu Chang , Dongxi Sun , Vinh Dang , Michael X. Yang , Anzhong Chang , Anh N. Nguyen , Ming Xi
发明人： Siqing Lu , Yu Chang , Dongxi Sun , Vinh Dang , Michael X. Yang , Anzhong Chang , Anh N. Nguyen , Ming Xi
IPC分类号： G01N3508
CPC分类号： G05D11/133 , Y10T436/104998 , Y10T436/12
摘要： A valve control system for a semiconductor processing chamber includes a system control computer and a plurality of electrically controlled valves associated with the processing chamber. The system further includes a programmable logic controller in communication with the system control computer and operatively coupled to the electrically controlled valves. The refresh time for control of the valves may be less than 10 milliseconds. Consequently, valve control operations do not significantly extend the period of time required for highly repetitive cycling in atomic layer deposition processes. A hardware interlock may be implemented through the output power supply of the programmable logic controller.
摘要翻译：用于半导体处理室的阀门控制系统包括系统控制计算机和与处理室相关联的多个电控阀。该系统还包括与系统控制计算机通信并可操作地耦合到电控阀的可编程逻辑控制器。控制阀的刷新时间可能小于10毫秒。因此，阀门控制操作不会显着延长原子层沉积工艺中高度重复循环所需的时间。可以通过可编程逻辑控制器的输出电源实现硬件互锁。

7. 发明授权

US06302964B1 One-piece dual gas faceplate for a showerhead in a semiconductor wafer processing system 有权
标题翻译：用于半导体晶片处理系统中的喷头的单件双气面板
公开(公告)号：US06302964B1
公开(公告)日：2001-10-16
申请号：US09526345
申请日：2000-03-16
申请人： Salvador P. Umotoy , Lawrence C. Lei , Anh N. Nguyen , Steve H. Chiao
发明人： Salvador P. Umotoy , Lawrence C. Lei , Anh N. Nguyen , Steve H. Chiao
IPC分类号： C23C1600
CPC分类号： C23C16/45574 , C23C16/45514 , C23C16/45565
摘要： A one-piece gas distribution faceplate for a showerhead. The one-piece gas distribution faceplate includes a first surface, a second surface, and a third surface. The one-piece gas distribution faceplate comprises a plurality of first gas holes extending through the one-piece gas distribution faceplate between the first surface and the second surface. The one-piece gas distribution faceplate has an internal gas distribution cavity defined by a plurality of interconnecting channels. A plurality of second gas holes extend through the one-piece gas distribution faceplate between the first surface into a plurality of the interconnecting channels. The interconnecting channels are fluidly coupled to a plenum that is in turn connected to at least one gas conduit. The gas conduit extends to the third surface.
摘要翻译：用于喷头的一体式气体分配面板。一体式气体分配面板包括第一表面，第二表面和第三表面。一体式气体分配面板包括在第一表面和第二表面之间延伸穿过一体式气体分配面板的多个第一气体孔。一体式气体分配面板具有由多个互连通道限定的内部气体分布腔。多个第二气体孔在第一表面之间延伸穿过一体式气体分布面板到多个互连通道中。互连通道流体耦合到一个通风室，该静压室又连接到至少一个气体导管。气体导管延伸到第三表面。

8. 发明授权

US5615239A Core differential pressure and liquid control line apparatus in a nuclear reactor 失效
标题翻译：核反应堆中的核心压差和液体控制线设备
公开(公告)号：US5615239A
公开(公告)日：1997-03-25
申请号：US560100
申请日：1995-11-17
申请人： Gerald A. Deaver , James W. Pyron , Anh N. Nguyen
发明人： Gerald A. Deaver , James W. Pyron , Anh N. Nguyen
IPC分类号： G21C9/033 , G21C7/22 , G21C17/02 , G21C17/032 , G21D1/00 , G21C17/00
CPC分类号： G21C17/032 , G21Y2002/204 , G21Y2004/30
摘要： A core differential pressure and liquid control line apparatus for a nuclear reactor is described. The apparatus includes a first portion configured to be positioned within and extend through an opening in the pressure vessel wall. At least the first tube portion has a diameter less than the diameter of the opening in the pressure vessel wall. An annulus is formed between the exterior surface of the first tube portion and the pressure vessel wall so that a neutron absorbent can be injected into the pressure vessel at the location of the annulus. The apparatus further includes a second L-shaped tube portion configured to be coupled to the first tube portion, and a third tube portion configured to be coupled to the second tube portion. The open end of the third tube portion extends to an elevation above the core plate.
摘要翻译：描述了用于核反应堆的核心差压和液体控制线装置。该装置包括构造成定位在压力容器壁内的开口中并延伸穿过压力容器壁中的开口的第一部分。至少第一管部分的直径小于压力容器壁中开口的直径。在第一管部分的外表面和压力容器壁之间形成环形空间，使得中空吸收剂能够在环形空间的位置处注入压力容器中。该装置还包括被配置为联接到第一管部分的第二L形管部分和被配置为联接到第二管部分的第三管部分。第三管部分的开口端延伸到芯板上方的高度。

9. 发明授权

US08382897B2 Process gas delivery for semiconductor process chambers 有权
标题翻译：半导体处理室的工艺气体输送
公开(公告)号：US08382897B2
公开(公告)日：2013-02-26
申请号：US13456189
申请日：2012-04-25
申请人： Kedarnath Sangam , Anh N. Nguyen
发明人： Kedarnath Sangam , Anh N. Nguyen
IPC分类号： C30B25/14
CPC分类号： H01L21/3141 , C23C16/405 , C23C16/45544 , C23C16/45582 , H01L21/31645 , Y10T117/10 , Y10T137/87249
摘要： Methods for gas delivery to a process chamber are provided herein. In some embodiments, a method may include flowing a process gas through one or more gas conduits, each gas conduit having an inlet and an outlet for facilitating the flow of gas through the gas conduits and into a gas inlet funnel having a second volume, wherein each gas conduit has a first volume less than the second volume, and wherein each gas conduit has a cross-section that increases from a first cross-section proximate the inlet to a second cross-section proximate the outlet but excluding any intersection points between the gas inlet funnel and the gas conduit, and wherein the second cross-section is non-circular; and delivering the process gas to the substrate via the gas inlet funnel.
摘要翻译：本文提供了将气体输送到处理室的方法。在一些实施例中，方法可以包括使工艺气体流过一个或多个气体导管，每个气体管道具有入口和出口，用于促进气体流过气体导管并进入具有第二体积的气体入口漏斗，其中每个气体管道具有小于第二容积的第一容积，并且其中每个气体导管具有从靠近入口的第一横截面增加到靠近出口的第二横截面的横截面，但不包括气体入口漏斗和气体导管，并且其中第二横截面是非圆形的; 以及经由进气漏斗将工艺气体输送到衬底。

10. 发明申请

US20110223334A1 ATOMIC LAYER DEPOSITION CHAMBER WITH MULTI INJECT 有权
标题翻译：原子层沉积室多重注入
公开(公告)号：US20110223334A1
公开(公告)日：2011-09-15
申请号：US13043189
申请日：2011-03-08
申请人： Joseph Yudovsky , Anh N. Nguyen , Tai T. Ngo
发明人： Joseph Yudovsky , Anh N. Nguyen , Tai T. Ngo
IPC分类号： C23C16/455 , C23C16/458
CPC分类号： C23C16/45574 , C23C16/4408 , C23C16/45504 , C23C16/45525 , C23C16/45544 , C23C16/45561 , C23C16/45591 , H01J37/32449 , H01L21/0228 , H01L21/28194 , H01L21/3141
摘要： Embodiments of the invention relate to apparatus and methods for depositing materials on substrates during atomic layer deposition processes. In one embodiment, a chamber lid assembly comprises a channel having an upper portion and a lower portion, wherein the channel extends along a central axis, a housing having an inner region and at least partially defining two or more annular channels, an insert disposed in the inner region and defining the upper portion, the upper portion fluidly coupled with the two or more annular channels, and a tapered bottom surface extending from the bottom portion of the channel to a peripheral portion of the chamber lid assembly.
摘要翻译：本发明的实施例涉及在原子层沉积工艺期间在衬底上沉积材料的装置和方法。在一个实施例中，室盖组件包括具有上部和下部的通道，其中通道沿着中心轴线延伸，壳体具有内部区域并且至少部分地限定两个或更多个环形通道，插入件设置在所述内部区域并且限定所述上部，所述上部与所述两个或多个环形通道流体联接，以及从所述通道的底部部分延伸到所述腔室盖组件的周边部分的锥形底面。

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